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    4-ELEMENT LINEAR PHOTODIODE Search Results

    4-ELEMENT LINEAR PHOTODIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TCR5RG28A Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 2.8 V, 500 mA, WCSP4F Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DM18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, DFN4 Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DG18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, WCSP4E Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    4-ELEMENT LINEAR PHOTODIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as


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    PDF C30985E 25-Element C30985E

    PDB-C232

    Abstract: Photodiode Array 32 element
    Text: Blue Enhanced Linear Array Silicon Photodiode PDB-C232 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .282 [7.16] 1.705 [43.31] 1.695 [43.05] 1.291 [32.78] 34X Ø.018 [0.46] .400 [10.16] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23


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    PDF PDB-C232 PDB-C232 Photodiode Array 32 element

    Photodiode Array 32 element

    Abstract: No abstract text available
    Text: PDB-C232 Blue Enhanced Linear Array Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .282 [7.16] 1.705 [43.31] 1.695 [43.05] 1.291 [32.78] 34X Ø.018 [0.46] .400 [10.16] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23


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    PDF PDB-C232 1x10-14 660nm pdb-c232 Photodiode Array 32 element

    PDB-C232

    Abstract: Photodiode Array 32 element
    Text: PDB-C232 Blue Enhanced Linear Array Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .282 [7.16] 1.705 [43.31] 1.695 [43.05] 1.291 [32.78] 34X Ø.018 [0.46] .400 [10.16] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23


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    PDF PDB-C232 PDB-C232 Photodiode Array 32 element

    S5668-11

    Abstract: ceramic scintillator 9 ELEMENT photoDIODE ARRAY
    Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed


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    PDF 16-element S5668 S5668-11 S5668-34 SE-171 KMPD1012E06 ceramic scintillator 9 ELEMENT photoDIODE ARRAY

    9 ELEMENT photoDIODE ARRAY

    Abstract: No abstract text available
    Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed


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    PDF 16-element S5668 S5668-11/-12 S5668-34 SE-171 KMPD1012E04 9 ELEMENT photoDIODE ARRAY

    9 ELEMENT photoDIODE ARRAY

    Abstract: s566 linear array 50 pitch
    Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed


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    PDF 16-element S5668 S5668-11 S5668-34 SE-171 KMPD1012E05 9 ELEMENT photoDIODE ARRAY s566 linear array 50 pitch

    Photodiode Array linear

    Abstract: 9 ELEMENT photoDIODE ARRAY S5668-34 linear array photodiode element S5668 S5668-01 S5668-02 S5668-11 SE-171 Photodiode Array
    Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed


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    PDF 16-element S5668 S5668-11 S5668-34 SE-171 KMPD1012E06 Photodiode Array linear 9 ELEMENT photoDIODE ARRAY linear array photodiode element S5668-01 S5668-02 Photodiode Array

    Photodiode Array linear

    Abstract: 16 Photodiode-Array linear array photodiode element photodiode linear array Photodiode-Array scintillator S5668 S5668-01 S5668-02 S5668-34
    Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed


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    PDF 16-element S5668 S5668-11/-12 S5668-34 SE-171 KMPD1012E03 Photodiode Array linear 16 Photodiode-Array linear array photodiode element photodiode linear array Photodiode-Array scintillator S5668-01 S5668-02

    Photodiode Array 32 element

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low


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    PDF G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: SE-171 KMIR1013E01 Photodiode Array 32 element

    Untitled

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low


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    PDF G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: SE-171 KMIR1013E02

    Photodiode Array 32 element

    Abstract: No abstract text available
    Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low


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    PDF G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: G9204-512D: SE-171 KMIR1013E02 Photodiode Array 32 element

    G9204

    Abstract: G9203-256D G9204-512D
    Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low


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    PDF G9203-256D, G9204-512D G9203-256D G9204-512D G9203-256D: SE-171 KMIR1013E02 G9204

    scintillator

    Abstract: Photodiode Array 32 element S5668-321 ceramic scintillator 16 Photodiode-Array S5668 x-ray tube Photodiode Array scintillator CsI KMPD1106E04
    Text: 16-element Si photodiode array S5668 series Long and narrow format by multiple arrays S5668-021 The S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC


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    PDF 16-element S5668 S5668-021 S5668-121 S5668-321 S5668-421 SE-171 scintillator Photodiode Array 32 element ceramic scintillator 16 Photodiode-Array x-ray tube Photodiode Array scintillator CsI KMPD1106E04

    Photodiode Array 32 element

    Abstract: scintillator
    Text: 16-element Si photodiode array S5668 series Long and narrow format by multiple arrays S5668-021 The S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC


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    PDF 16-element S5668 S5668-021 S5668-121 S5668-321 S5668-421 SE-171 Photodiode Array 32 element scintillator

    Untitled

    Abstract: No abstract text available
    Text: 16-element Si photodiode array S5668 series Long and narrow format by multiple arrays S5668-021 The S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC


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    PDF 16-element S5668 S5668-021 S5668-121 S5668-321 S5668-421 SE-171

    TCD104C

    Abstract: 2sa1016 DS0026CN
    Text: TOSHIBA {L OG IC /ME MORY} T? DDD^sm 9097248 TOSHIBA LOGIC/MEMORY CCD IMAGE SENSOR CCD (Charge Coupled Device) TCD104C 67.C 0 9 5 4 1 D T-41-55 The TCD104C is a high resolution and high sensitivity 128 element linear image sensor. The device can be used for OCR, POS handscanner


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    PDF TCD104C T-41-55 TCD104C 32/im 4D12A-C) T-41-5 85-Q05 2sa1016 DS0026CN

    DS0026CN

    Abstract: sn7404 HC801 TCD102C-1 2SA1015 T-41-55 logic gate diagram of ic tri linear CCD
    Text: TOSHIBA ~b? -CLOGIC/MEMORY} 9 09 72 48 T OS HI BA ^ 0 ^ 7 5 4 0 DOCHSai 5 |~~ ÍL O G I C / M E M O R Y CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device) 67 C 0 9 5 2 1 TCD102C-1 D T-41-55 The TDS102C-1 is a high resolution and high sensitivity 2048 element


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    PDF TCD102C-1 T-41-55 TDS102C-1 TCD102C-1 4D22D-C) 14/imxgQ48 Q25-Q05 DS0026CN sn7404 HC801 2SA1015 T-41-55 logic gate diagram of ic tri linear CCD

    toshiba ccd linear dual shift gate

    Abstract: ccd linear toshiba TCD107
    Text: T O S H I B A -CLOGIC/MEÎIORY} 90 9 7 2 4 8 T OS H I B A b? DE I ciO‘i7E4fl D 0 I H S 7 3 LOGIC/MEMORY CCD IMAGE SENSOR CCD (Charge Coupled Device) TCD107C 67 C 0 9 5 7 3 T-41-55 The TCD107C is a high resolution and high sensitivity 1024 element linear image sensor.


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    PDF TCD107C T-41-55 TCD107C 14//mx 14//m 14/un toshiba ccd linear dual shift gate ccd linear toshiba TCD107

    IR photodiode sensor

    Abstract: Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 C4351 silicon photodiode array Photodiode Array 2d Linear Image sensor IC
    Text: Photodiode Arrays/Linear Image Sensors 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active area of 1.175mm (width X 2.0mm (height) with 1.575mm pitch. This diode is


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    PDF 16-ELEMENT S5668 175mm 575mm 46-ELEMENT C4351 IR photodiode sensor Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 silicon photodiode array Photodiode Array 2d Linear Image sensor IC

    S7585

    Abstract: s4114 driver
    Text: Photodiode Arrays/Image Sensors_ 16-element Si Photodiode Arrays S5668 Series For various measuring purpose This S5668 series devices are 16-element photodiode arrays with a sensitive area of 1.175 mm (W x 2.0 mm (H) per element, formed at a pitch of 1.575 mm.


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    PDF 16-element S5668 S5668-11/-12) 46-element spe29, S7585 S3805 S4529 S7585 s4114 driver

    C2325

    Abstract: S2301-512 s2301 S23011 S2301-FX c2325 hamamatsu
    Text: HAMAMATSU CORP n E D • 4a21bCH 0Da25fc,3 & ■ "J Z \\ •» HAMAMATSU TECHNICAL DATA € PCD LINEAR IMAGE SENSORS S2301-FX SERIES (FOR X-RAY DETECTION The S2301 series PCD linear image sensors are monolithic self-scanning photodiode arrays designed originally for


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    PDF 4a21bCH 0Da25fc S2301-FX S2301 S2301, S2304 C2325 S2301-512 S23011 c2325 hamamatsu

    S2301-512Q

    Abstract: S2304-512Q S2301-512 S2304 s2301 S2301-256Q S2304-1024Q
    Text: HAMAMATSU CORP 11E D HAMAMATSU TECHNICAL DATA 0QGSS51 € c € • PCD LINEAR IMAGE SENSORS S2301 SERIES t=v/-s s * 5 0 /¿ m € 1 P itc h T yp e) The S2301 series PCD linear im age sensors are monolithic self-scanning photodiode arrays designed specifically


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    PDF 0QGSS51 S2301 S2304 S2304-256Q) S2304-512Q) S2304-1024Q) S2301-512Q S2304-512Q S2301-512 S2301-256Q S2304-1024Q

    S2304

    Abstract: S2304-1024Q S2301-512Q s2301 S2304-512Q S2301-512 C2325 c2325 hamamatsu
    Text: HAMAMATSU CORP 1 1 E ». • HAMAMATSU TECHNICAL DATA 4 2 ETfc>CH 0 0 0 2 5 5 5 =1 - - M i - s s PCD LINEAR IMAGE SENSORS S2304 SERIES 25 [l m Pitch Type The S2304 series PCD linear im age sensors are monolithic self-scanning photodiode arrays designed specifically


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    PDF S2304 S2301 S2301-128Q) S2301-256Q) S2301-512Q) C2325 S2304-1024Q S2301-512Q S2304-512Q S2301-512 c2325 hamamatsu