Untitled
Abstract: No abstract text available
Text: DATASHEET Photon Detection C30985E 25-Element Silicon Avalanche Photodiode Si APD Linear Array The C30985E is a 25-element silicon avalanche photodiode (Si APD) consisting of a double diffused “reach through” structure. This structure provides high responsivity up to 1060 nm incidence radiation and even beyond, as well as
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C30985E
25-Element
C30985E
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PDB-C232
Abstract: Photodiode Array 32 element
Text: Blue Enhanced Linear Array Silicon Photodiode PDB-C232 PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .282 [7.16] 1.705 [43.31] 1.695 [43.05] 1.291 [32.78] 34X Ø.018 [0.46] .400 [10.16] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
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PDB-C232
PDB-C232
Photodiode Array 32 element
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Photodiode Array 32 element
Abstract: No abstract text available
Text: PDB-C232 Blue Enhanced Linear Array Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .282 [7.16] 1.705 [43.31] 1.695 [43.05] 1.291 [32.78] 34X Ø.018 [0.46] .400 [10.16] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
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PDB-C232
1x10-14
660nm
pdb-c232
Photodiode Array 32 element
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PDB-C232
Abstract: Photodiode Array 32 element
Text: PDB-C232 Blue Enhanced Linear Array Silicon Photodiode PACKAGE DIMENSIONS INCH [mm] PACKAGE DIMENSIONS INCH [mm] .282 [7.16] 1.705 [43.31] 1.695 [43.05] 1.291 [32.78] 34X Ø.018 [0.46] .400 [10.16] 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
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PDB-C232
PDB-C232
Photodiode Array 32 element
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S5668-11
Abstract: ceramic scintillator 9 ELEMENT photoDIODE ARRAY
Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed
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16-element
S5668
S5668-11
S5668-34
SE-171
KMPD1012E06
ceramic scintillator
9 ELEMENT photoDIODE ARRAY
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9 ELEMENT photoDIODE ARRAY
Abstract: No abstract text available
Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed
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16-element
S5668
S5668-11/-12
S5668-34
SE-171
KMPD1012E04
9 ELEMENT photoDIODE ARRAY
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9 ELEMENT photoDIODE ARRAY
Abstract: s566 linear array 50 pitch
Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed
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16-element
S5668
S5668-11
S5668-34
SE-171
KMPD1012E05
9 ELEMENT photoDIODE ARRAY
s566
linear array 50 pitch
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Photodiode Array linear
Abstract: 9 ELEMENT photoDIODE ARRAY S5668-34 linear array photodiode element S5668 S5668-01 S5668-02 S5668-11 SE-171 Photodiode Array
Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed
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16-element
S5668
S5668-11
S5668-34
SE-171
KMPD1012E06
Photodiode Array linear
9 ELEMENT photoDIODE ARRAY
linear array photodiode element
S5668-01
S5668-02
Photodiode Array
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Photodiode Array linear
Abstract: 16 Photodiode-Array linear array photodiode element photodiode linear array Photodiode-Array scintillator S5668 S5668-01 S5668-02 S5668-34
Text: PHOTODIODE 16-element Si photodiode array S5668 series Photodiode array ideal for light detection in a long, narrow area S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed
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16-element
S5668
S5668-11/-12
S5668-34
SE-171
KMPD1012E03
Photodiode Array linear
16 Photodiode-Array
linear array photodiode element
photodiode linear array
Photodiode-Array
scintillator
S5668-01
S5668-02
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Photodiode Array 32 element
Abstract: No abstract text available
Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low
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G9203-256D,
G9204-512D
G9203-256D
G9204-512D
G9203-256D:
G9204-512D:
SE-171
KMIR1013E01
Photodiode Array 32 element
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Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low
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G9203-256D,
G9204-512D
G9203-256D
G9204-512D
G9203-256D:
G9204-512D:
SE-171
KMIR1013E02
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PDF
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Photodiode Array 32 element
Abstract: No abstract text available
Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low
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G9203-256D,
G9204-512D
G9203-256D
G9204-512D
G9203-256D:
G9204-512D:
SE-171
KMIR1013E02
Photodiode Array 32 element
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PDF
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G9204
Abstract: G9203-256D G9204-512D
Text: IMAGE SENSOR InGaAs linear image sensor G9203-256D, G9204-512D Near infrared 0.9 to 1.7 um image sensor G9203-256D and G9204-512D are InGaAs linear image sensors that deliver high sensitivity and stability in the near infrared region. A charge amplifier array comprised of CMOS transistors, a shift register and a timing generator, etc. are assembled with an InGaAs photodiode array. Low
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G9203-256D,
G9204-512D
G9203-256D
G9204-512D
G9203-256D:
SE-171
KMIR1013E02
G9204
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scintillator
Abstract: Photodiode Array 32 element S5668-321 ceramic scintillator 16 Photodiode-Array S5668 x-ray tube Photodiode Array scintillator CsI KMPD1106E04
Text: 16-element Si photodiode array S5668 series Long and narrow format by multiple arrays S5668-021 The S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC
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16-element
S5668
S5668-021
S5668-121
S5668-321
S5668-421
SE-171
scintillator
Photodiode Array 32 element
ceramic scintillator
16 Photodiode-Array
x-ray tube
Photodiode Array
scintillator CsI
KMPD1106E04
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Photodiode Array 32 element
Abstract: scintillator
Text: 16-element Si photodiode array S5668 series Long and narrow format by multiple arrays S5668-021 The S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC
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16-element
S5668
S5668-021
S5668-121
S5668-321
S5668-421
SE-171
Photodiode Array 32 element
scintillator
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Untitled
Abstract: No abstract text available
Text: 16-element Si photodiode array S5668 series Long and narrow format by multiple arrays S5668-021 The S5668 series is a 16-element Si photodiode linear array. Each element has an active area of 1.175 mm width x 2.0 mm (height) and is arrayed at an element pitch of 1.575 mm. The entire linear array is mounted on a 25.4 mm (1 inch) long PC
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16-element
S5668
S5668-021
S5668-121
S5668-321
S5668-421
SE-171
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TCD104C
Abstract: 2sa1016 DS0026CN
Text: TOSHIBA {L OG IC /ME MORY} T? DDD^sm 9097248 TOSHIBA LOGIC/MEMORY CCD IMAGE SENSOR CCD (Charge Coupled Device) TCD104C 67.C 0 9 5 4 1 D T-41-55 The TCD104C is a high resolution and high sensitivity 128 element linear image sensor. The device can be used for OCR, POS handscanner
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TCD104C
T-41-55
TCD104C
32/im
4D12A-C)
T-41-5
85-Q05
2sa1016
DS0026CN
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DS0026CN
Abstract: sn7404 HC801 TCD102C-1 2SA1015 T-41-55 logic gate diagram of ic tri linear CCD
Text: TOSHIBA ~b? -CLOGIC/MEMORY} 9 09 72 48 T OS HI BA ^ 0 ^ 7 5 4 0 DOCHSai 5 |~~ ÍL O G I C / M E M O R Y CCD LINEAR IMAGE SENSOR CCD Charge Coupled Device) 67 C 0 9 5 2 1 TCD102C-1 D T-41-55 The TDS102C-1 is a high resolution and high sensitivity 2048 element
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TCD102C-1
T-41-55
TDS102C-1
TCD102C-1
4D22D-C)
14/imxgQ48
Q25-Q05
DS0026CN
sn7404
HC801
2SA1015
T-41-55
logic gate diagram of ic
tri linear CCD
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toshiba ccd linear dual shift gate
Abstract: ccd linear toshiba TCD107
Text: T O S H I B A -CLOGIC/MEÎIORY} 90 9 7 2 4 8 T OS H I B A b? DE I ciO‘i7E4fl D 0 I H S 7 3 LOGIC/MEMORY CCD IMAGE SENSOR CCD (Charge Coupled Device) TCD107C 67 C 0 9 5 7 3 T-41-55 The TCD107C is a high resolution and high sensitivity 1024 element linear image sensor.
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TCD107C
T-41-55
TCD107C
14//mx
14//m
14/un
toshiba ccd linear dual shift gate
ccd linear toshiba
TCD107
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IR photodiode sensor
Abstract: Photodiode Array linear C2334 linear array photodiode element silicon linear photodiode array photodiode linear array 256 C4351 silicon photodiode array Photodiode Array 2d Linear Image sensor IC
Text: Photodiode Arrays/Linear Image Sensors 16-ELEMENT SILICON PHOTODIODE ARRAY S5668 SERIES For various measuring purpose This photodiode consists of 16 elem ents of Silicon Photodiode having active area of 1.175mm (width X 2.0mm (height) with 1.575mm pitch. This diode is
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OCR Scan
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16-ELEMENT
S5668
175mm
575mm
46-ELEMENT
C4351
IR photodiode sensor
Photodiode Array linear
C2334
linear array photodiode element
silicon linear photodiode array
photodiode linear array 256
silicon photodiode array
Photodiode Array 2d
Linear Image sensor IC
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S7585
Abstract: s4114 driver
Text: Photodiode Arrays/Image Sensors_ 16-element Si Photodiode Arrays S5668 Series For various measuring purpose This S5668 series devices are 16-element photodiode arrays with a sensitive area of 1.175 mm (W x 2.0 mm (H) per element, formed at a pitch of 1.575 mm.
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OCR Scan
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16-element
S5668
S5668-11/-12)
46-element
spe29,
S7585
S3805
S4529
S7585
s4114 driver
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C2325
Abstract: S2301-512 s2301 S23011 S2301-FX c2325 hamamatsu
Text: HAMAMATSU CORP n E D • 4a21bCH 0Da25fc,3 & ■ "J Z \\ •» HAMAMATSU TECHNICAL DATA € PCD LINEAR IMAGE SENSORS S2301-FX SERIES (FOR X-RAY DETECTION The S2301 series PCD linear image sensors are monolithic self-scanning photodiode arrays designed originally for
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OCR Scan
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4a21bCH
0Da25fc
S2301-FX
S2301
S2301,
S2304
C2325
S2301-512
S23011
c2325 hamamatsu
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S2301-512Q
Abstract: S2304-512Q S2301-512 S2304 s2301 S2301-256Q S2304-1024Q
Text: HAMAMATSU CORP 11E D HAMAMATSU TECHNICAL DATA 0QGSS51 € c € • PCD LINEAR IMAGE SENSORS S2301 SERIES t=v/-s s * 5 0 /¿ m € 1 P itc h T yp e) The S2301 series PCD linear im age sensors are monolithic self-scanning photodiode arrays designed specifically
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OCR Scan
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0QGSS51
S2301
S2304
S2304-256Q)
S2304-512Q)
S2304-1024Q)
S2301-512Q
S2304-512Q
S2301-512
S2301-256Q
S2304-1024Q
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S2304
Abstract: S2304-1024Q S2301-512Q s2301 S2304-512Q S2301-512 C2325 c2325 hamamatsu
Text: HAMAMATSU CORP 1 1 E ». • HAMAMATSU TECHNICAL DATA 4 2 ETfc>CH 0 0 0 2 5 5 5 =1 - - M i - s s PCD LINEAR IMAGE SENSORS S2304 SERIES 25 [l m Pitch Type The S2304 series PCD linear im age sensors are monolithic self-scanning photodiode arrays designed specifically
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OCR Scan
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S2304
S2301
S2301-128Q)
S2301-256Q)
S2301-512Q)
C2325
S2304-1024Q
S2301-512Q
S2304-512Q
S2301-512
c2325 hamamatsu
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