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    4 OE 18A Search Results

    4 OE 18A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DC2268A-F Analog Devices LTM4630A Demo Board - Dual 18A Visit Analog Devices Buy
    DC2152A Analog Devices LTM4630A Demo Board - Dual 18A Visit Analog Devices Buy
    LTM4630IY-1A Analog Devices 2x 18A or 1x 36A µModule Reg Visit Analog Devices Buy
    LTM4675IY#PBF Analog Devices 2x 9A or 1x 18A µModule Reg w Visit Analog Devices Buy
    LTM4630IY-1A#PBF Analog Devices 2x 18A or 1x 36A µModule Reg Visit Analog Devices Buy

    4 OE 18A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LCH245A

    Abstract: No abstract text available
    Text: SN54LVCH245A, SN74LVCH245A OCTAL BUS TRANSCEIVERS WITH 3-STATE OUTPUTS www.ti.com SCES008O – JULY 1995 – REVISED DECEMBER 2005 FEATURES 1 20 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC OE B1 B2 B3 B4 B5 B6 B7 B8 A1 A2 A3 A4 A5 A6 A7 A8 1 20 19 OE


    Original     		PDF SN54LVCH245A, SN74LVCH245A SCES008O SN54LVCH245A SN74LVCH245A LCH245A

    Untitled

    Abstract: No abstract text available
    Text: SN54LVTH245A, SN74LVTH245A 3.3ĆV ABT OCTAL BUS TRANSCEIVERS WITH 3ĆSTATE OUTPUTS SCBS130T − MAY 1992 − REVISED SEPTEMBER 2003 2 19 3 18 4 17 5 16 6 15 7 14 8 13 9 12 10 11 VCC OE B1 B2 B3 B4 B5 B6 B7 B8 A1 A2 A3 A4 A5 A6 A7 A8 20 A2 A1 DIR VCC 1 SN54LVTH245A . . . FK PACKAGE


    Original     		PDF SN54LVTH245A, SN74LVTH245A SCBS130T 000-V A114-A) A115-A) SN54LVTH245A

    0Z96

    Abstract: bc 813 TQFP-208 SA1100 teradyne victory BC 147 B
    Text: From: QUOIN:MDBELKIN "Josh Belkin NIO1/J5 dtn 285-3337 18-Aug-1997 1513" 18AUG-1997 15:15:42.54 To: ARDC:REIS,PETST4:LOU CC: Subj: SA1100.BSDL now passing all pins except for TDO stuck-low problem -SA-1100.bsdl


    Original     		PDF 18-Aug-1997 18AUG-1997 SA1100 ----------------------------------SA-1100 SA-1100 04-AUG-1997 DC1035 SA-110 18-AUG-1997 SA1100: 0Z96 bc 813 TQFP-208 teradyne victory BC 147 B

    SN74LVC16245A

    Abstract: SN74LVC2244A SN74LVC240A SN74LVC244A SN74LVC245A SN74LVCH244A SN74LVCH245A SN74LVCR2245A 9511323 LVC240A
    Text: TEXAS INSTRUMENTS Informational Notification of Errata for the Redesign of Several SN74LVC/LVCHXXXXA Devices August 4, 1997 Revision A Abstract This errata notification from Texas Instruments is due to an administrative error on PCN 5298 dated May 6, 1997 . The changed values were not highlighted in underlined bold italics as stated and the table


    Original     		PDF SN74LVC/LVCHXXXXA SN74LVC16245A SN74LVC240A SN74LVC/LVCH SN74LVC374A SN74LVC2244A SN74LVC244A SN74LVC245A SN74LVCH244A SN74LVCH245A SN74LVCR2245A 9511323 LVC240A

    C1FFF

    Abstract: AT49BV16X4-90 AT49BV1604 AT49BV1604T AT49BV1614 AT49BV1614T AT49BV16X4 F8000
    Text: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture • • • • • • • • • • • – Thirty 32K word 64K byte Sectors with Individual Write Lockout – Eight 4K word (8K byte) Sectors with Individual Write Lockout


    Original     		PDF 48-Ball, 48-Lead, MO-142 AT49BV16X4 C1FFF AT49BV16X4-90 AT49BV1604 AT49BV1604T AT49BV1614 AT49BV1614T F8000

    Untitled

    Abstract: No abstract text available
    Text: TXB0104-Q1 www.ti.com. SCES727 – JUNE 2008 4-BIT BIDIRECTIONAL VOLTAGE-LEVEL TRANSLATOR


    Original     		PDF TXB0104-Q1 SCES727 15-kV

    SST38VF166

    Abstract: JEP-137 32h 327
    Text: 16 Megabit FlashBank Memory SST38VF166 Data Sheet SST38VF16616Mb x16 FlashBank + 64Kb E2 FEATURES: • • • • • • Single 2.7-3.6V Read and Write Operations Separate Memory Banks for Code or Data – Simultaneous Read and Write Capability Superior Reliability


    Original     		PDF SST38VF166 SST38VF16616Mb MO-142 S71065 SST38VF166 JEP-137 32h 327

    TAA 2761 A

    Abstract: TAA 2761 p 523 555H SST34HF1621 SST34HF1622 SST34HF1641 SST34HF1642
    Text: 16 Mbit Concurrent SuperFlash + 2 Mbit or 4 Mbit SRAM SST34HF162x / SST34HF164x Preliminary Specifications FEATURES: • Flash Organization: 1M x16 • Dual-Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection Devices


    Original     		PDF SST34HF162x SST34HF164x SST34HF1621: 12Mbit SST34HF1641: SST34HF1622: SST34HF1642: 56-BALL S71172 TAA 2761 A TAA 2761 p 523 555H SST34HF1621 SST34HF1622 SST34HF1641 SST34HF1642

    Untitled

    Abstract: No abstract text available
    Text: 54ACT823 9-Bit D Flip-Flop General Description The ACT823 is a 9-bit buffered register. It features Clock Enable and Clear which are ideal for parity bus interfacing in high performance microprogramming systems. The ACT823 offers noninverting outputs and is fully compatible with


    Original     		PDF 54ACT823 ACT823 Am29823 54ACT823DMQB 54ACT823FMQB 54ACT823LMQB 24-Lead

    TRANSISTOR SUBSTITUTION DATA BOOK 1993

    Abstract: 18b2 diode 18b1 diode SCDS084A Texas instruments ALS military products The Diode Data Book with Package Outlines 1993 TRANSISTOR SUBSTITUTION DATA BOOK CT 7A2 74CBTLV16 scba004
    Text: CBT 5ĆV and CBTLV (3.3ĆV) Bus Switches Data Book December 1998 Logic Products General Information CBT Single Gates CBT (2 to 10 Bit) CBT Widebus CBT With Integrated Diodes CBTLV Single Gates CBTLV (2 to 10 Bit) CBTLV Widebus Application Reports Mechanical Data


    Original     		PDF 48-PIN MIL-STD-1835: GDFP1-F48 -146AA GDFP1-F56 -146AB TRANSISTOR SUBSTITUTION DATA BOOK 1993 18b2 diode 18b1 diode SCDS084A Texas instruments ALS military products The Diode Data Book with Package Outlines 1993 TRANSISTOR SUBSTITUTION DATA BOOK CT 7A2 74CBTLV16 scba004

    transistor A1624

    Abstract: ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N
    Text: Rev. 1.0, Jun. 2010 K5N1229ACD-BQ12 MCP Specification 512Mb 32M x16 Muxed Burst, Multi Bank SLC NOR Flash + 128Mb (8M x16) Multiplexed Synchronous Burst UtRAM2 datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		PDF K5N1229ACD-BQ12 512Mb 128Mb transistor A1624 ba21 transistor Samsung K5 128MB flash BA252 BA339 512Mb nor flash memory K5N1229ACD-BQ12 TBA 1205 K5n12 samsung, K5N

    jm2030

    Abstract: Z111 L0614
    Text: FAST CM O S EEPROM WITH SERIAL PRO TOC OL C H A N N E L SPC 16K ( 2 K x 8-BIT) IDT78C 18A FEATURES: DESCRIPTION: • 2K x 8 EEPROM with serial write and readback The IDT78C18A is a 5 volt only 2 K x 8 Electrically Erasable Programmable Read-Only M e n« ^(E E P R O M ) with Serial Proto­


    OCR Scan     		PDF IDT78C18A 125mA MIL-STD-883, 78C18A jm2030 Z111 L0614

    Untitled

    Abstract: No abstract text available
    Text: 3 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED BY TYCO ELECTRONICS CORPORATION. FOR PUBLICATION - 2 - R EVISIO N S LOC 6 CE ALL RIGHTS RESERVED. DESCRIPTION C2 C3 REVISED—ADDED - 2 4 , R E V IS E D —A D D ED -25 09N O V07 18AUG09 -20 JWD JD JS JS


    OCR Scan     		PDF 18AUG09 1300nm 24SEP05 31MAR2000

    KMF318

    Abstract: M06G KMF318-GS
    Text: 7 •217- £ SPECIFICATIONS m y 42 VOLTAGE 500Vac FREQUENCY 5 0 /60H z CURRENT 18A @ 40"C TEMPERATURE - 2 5 TO 10CTC LEAKAGE CURRENT 30m A @ 50 0 V 50Hz HUMIDITY 9 0 % RH N O N-CONDENSING VIBRATION 10— 200H z 1.8G SURGE 4500Vpk 1.2/50jus ELECTRIC STRENGTH 2250Vac/1 min.


    OCR Scan     		PDF 500Vac 50/60Hz 10CTC 200Hz 4500Vpk 2/50jus 2250Vac/1 10sqmm 33xljuF 68juF: KMF318 M06G KMF318-GS

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.6V Read/Write • Access Time - 90 ns • Sector Erase Architecture - AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual Write Lockout Two 16K Word (32K Byte) Sectors with Individual Write Lockout Eight 4K Word (8K Byte) Sectors with Individual Write Lockout


    OCR Scan     		PDF AT49BV8004 AT49BV8011 265A-02/99/XM

    Untitled

    Abstract: No abstract text available
    Text: Features • 2.7V to 3.6V Read/Write • Access Tim e - 90 ns • Sector Erase Architecture - AT49BV8004 T Fourteen 32K Word (64K Byte) Sectors with Individual W rite Lockout Two 16K Word (32K Byte) Sectors with Individual W rite Lockout Eight 4K Word (8K Byte) Sectors with Individual W rite Lockout


    OCR Scan     		PDF AT49BV8004 AT49BV8011 AT49BV8004n 48-ball, 48-lead, O-142

    29f004b

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION AM D il Am29F004B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • ■ 5.0 Volt single power supply operation ■ Top or bottom boot block configurations available — Minimizes system-level power requirem ents


    OCR Scan     		PDF Am29F004B 29F004B 29f004b

    ST CHN t4

    Abstract: a115 da hi ng sst39vf040
    Text: 4 Megabit 512K x 8 Multi-Purpose Flash SST39VF040 Prelim inary Specifications FEATURES: • Organized as 512K X 8 • Single 2.7-3.6V Read and Write Operations • Superior Reliability - Endurance: 100,000 Cycles (typical) - Greater than 100 years Data Retention


    OCR Scan     		PDF SST39VF040 MO-142 ST CHN t4 a115 da hi ng sst39vf040

    Untitled

    Abstract: No abstract text available
    Text: Data Sheet 124065 PCMCIA Flash-5 Memory Card AUG 94 Rev A Product Features • PCMCIA Release 2.1 Compatible ■ Thin Profile — Type I Package, 3.3 mm Thick ■ Standard Memory Capacities include 256 KB, 512 KB, 1 MB, and 2 MB ■ Single 5V Power Supply for Read and Write Operations


    OCR Scan     		PDF 8U9-733-B1H6

    Am29DL800B

    Abstract: AM29DL800BB80
    Text: P R E L IM IN A R Y AMDËI Am29DL800B 8 Megabit 1 M X 8-BII/512 K X 16-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory DISTINCTIVE CHARACTERISTICS • Simultaneous Read/Write operations — Host system can program or erase in one bank, then immediately and simultaneously read from


    OCR Scan     		PDF Am29DL800B 8-BII/512 16-Bit) Am29DL800 AM29DL800BB80

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION A M D ii Am29BL802C 8 Megabit 512 K x 16-Bit CMOS 3.0 Volt-only Burst Mode Flash Memory DISTINCTIVE CHARACTERISTICS • 32 words sequential with wrap around (linear 32), bottom boot ■ One 8 Kword, two 4 Kword, one 48 Kword, three 64 Kword, and two 128 Kword sectors


    OCR Scan     		PDF Am29BL802C 16-Bit) 000NTRUSION

    Untitled

    Abstract: No abstract text available
    Text: 8 Megabit Flash + 2 Megabit SRAM ComboMemory SST32LH802 Advance Inform ation FEATURES: • Organized as 512 K x16 Flash + 128Kx16 SRAM or 512K x8 x2 Flash + 128K x8 x2 SRAM • Single 3.0-3.6V Read and Write Operations • Concurrent Operation - Read from or write to SRAM while erase/


    OCR Scan     		PDF SST32LH802 128Kx16 SST32LH802

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LS Is SRAM MODULE STATIC RAM 1 M X 18 18M B IT Max. Type name Access Load memory time Outward dimensions Data sheet W x H x D (mm) page (ns) MH1M18AN-85L 85 MH1M18AN-10L 100 MH1M18AN-12L 120 MH1M18AN-15L 150 MH1M18AN-85H 85 MH1M18AN-10H 100 MH1M18AN-12H


    OCR Scan     		PDF MH1M18AN-85L MH1M18AN-10L MH1M18AN-12L MH1M18AN-15L MH1M18AN-85H MH1M18AN-10H MH1M18AN-12H MH1M18AN-15H MH1M18ANZ-85L MH1M18ANZ-10L

    cj cl a17

    Abstract: No abstract text available
    Text: TMS29LF004T, TMS29LF004B 524288 BY 8-BIT FLASH MEMORIES Single Power Supply Supports 2.7-V and 3.6-V Read/Write Operation Organization: 524288 x 8 Bits Array Blocking Architecture • • • • - • • • • • • • • • One 16K-Byte Protected-Boot Sector


    OCR Scan     		PDF TMS29LF004T, TMS29LF004B SMJS850 16K-Byte 32K-Byte 64K-Byte cj cl a17