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    4 MARKING CODE SOT 89 Search Results

    4 MARKING CODE SOT 89 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    4 MARKING CODE SOT 89 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TR13

    Abstract: 4868
    Text: Package Details SOT-89 Case Mechanical Drawing BOTTOM VIEW Lead Code: Part Marking: Full Part Number Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm R4 (4-March 2010) w w w. c e n t r a l s e m i . c o m Package Details SOT-89 Case


    Original     		PDF OT-89 EIA-481-1-A Ship11 TR13 4868

    BCP1898

    Abstract: No abstract text available
    Text: BCP1898 1A, 100V NPN Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-89 The BCP1898 is designed for switching applications. MARKING 4 1 189 8 2 3 A Date Code E


    Original     		PDF BCP1898 OT-89 BCP1898 BCP1898-P BCP1898-Q BCP1898-R 10-Dec-2010 500mA 500mA,

    2SB1132

    Abstract: 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q
    Text: 2SB1132 -1A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-89 Low power dissipation 0.5W 4 MARKING 1 2 3 1132 A Date Code E C B CLASSIFICATION OF hFE


    Original     		PDF 2SB1132 OT-89 2SB1132-P 2SB1132-Q 2SB1132-R -100mA -500mA, -50mA -50mA, 2SB1132 2SB1132R 2SB1132-R 2SB1132Q 2SB1132-Q

    BSP296

    Abstract: E6327 Q67000-S067 VPS05163
    Text: BSP296 Rev. 1.0 SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS 100 V • Enhancement mode RDS on 0.7 Ω • Logic Level ID 1.1 A • dv/dt rated SOT-223 4 3 2 1 VPS05163 Type Package Ordering Code Tape and Reel Information Marking


    Original     		PDF BSP296 OT-223 VPS05163 Q67000-S067 E6327 BSP296 E6327 Q67000-S067 VPS05163

    E6327

    Abstract: Q67000-S652
    Text: BSP 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Type VDS ID RDS(on) Package Marking BSP 89 240 V 0.36 A 6Ω SOT-223 BSP 89 Type BSP 89 Ordering Code Q67000-S652 Pin 3 Pin 4


    Original     		PDF OT-223 Q67000-S652 E6327 E6327 Q67000-S652

    E6327

    Abstract: Q67000-S652 sot 223 marking code BSP
    Text: BSP 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSP 89 240 V 0.36 A 6Ω SOT-223 BSP 89 Type BSP 89 Ordering Code Q67000-S652


    Original     		PDF OT-223 Q67000-S652 E6327 Sep-12-1996 E6327 Q67000-S652 sot 223 marking code BSP

    SOT-89 KA

    Abstract: E6327 Q67000-S506 marking BSs
    Text: BSS 87 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSS 87 240 V 0.29 A 6Ω SOT-89 KA Type BSS 87 Ordering Code Q67000-S506


    Original     		PDF OT-89 Q67000-S506 E6327 Sep-18-1996 SOT-89 KA E6327 Q67000-S506 marking BSs

    E6327

    Abstract: Q62702-S634
    Text: BSS 192 SIPMOS Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS th = -0.8.-2.0 V Pin 1 G Pin 2 D Pin 3 Pin 4 S Type VDS ID RDS(on) Package Marking BSS 192 -240 V -0.15 A 20 Ω SOT-89 KB Type BSS 192 Ordering Code Q62702-S634


    Original     		PDF OT-89 Q62702-S634 E6327 E6327 Q62702-S634

    BSS 89

    Abstract: E6327 Q67000-S506 marking BSs
    Text: BSS 87 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Type VDS ID RDS(on) Package Marking BSS 87 240 V 0.29 A 6Ω SOT-89 KA Type BSS 87 Ordering Code Q67000-S506 Pin 3 Pin 4 S


    Original     		PDF OT-89 Q67000-S506 E6327 BSS 89 E6327 Q67000-S506 marking BSs

    E6327

    Abstract: Q67000-S652
    Text: BSP 89 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 G Pin 2 D Type VDS ID RDS(on) Package Marking BSP 89 240 V 0.36 A 6Ω SOT-223 BSP 89 Type BSP 89 Ordering Code Q67000-S652 Pin 3 Pin 4


    Original     		PDF OT-223 Q67000-S652 E6327 E6327 Q67000-S652

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Common Anode Silicon Dual Switching Diodes These Common Anode Silicon Epitaxial Planar Dual Diodes are designed for use in ultra high speed switching applications. The LDAP222T1 device is housed in the SC-89 package which is designed


    Original     		PDF LDAP222T1 SC-89 LDAP222T1 SC-89

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated ZXTP03200BZ 2 00 V PN P L OW V C E s a t TRAN SIST OR IN SOT -89 Features • • • • • • • • • • Mechanical Data BVCEO > -200V BVECO > -2V Continuous current IC(cont) = 2A VCE(sat < -160mV @ -1A RCE(sat)=130mΩ


    Original     		PDF ZXTP03200BZ -200V -160mV OT-89 J-STD-020 ZXTP0320acknowledge DS31902

    marking CODE W2D

    Abstract: marking w2d
    Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power


    Original     		PDF MC74VHC1G126 353/SC marking CODE W2D marking w2d

    V = Device Code

    Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
    Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS


    Original     		PDF MC74VHC1GT50 V = Device Code GATE MARKING CODE VX SOT23 AND8004 AND8004/D

    V = Device Code

    Abstract: MC74VHC1G00
    Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF MC74VHC1G00 353/SC V = Device Code

    Untitled

    Abstract: No abstract text available
    Text: 2SD2153 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2153; DN-*, where ★ is hFE code • excellent current-to-gain characteristics • 2S02153 (MPT3) ♦0.2 4-5 —0.1 1.6 * 0.1


    OCR Scan     		PDF 2SD2153 OT-89, SC-62) 2SD2153; 2S02153

    147 B transistor

    Abstract: Transistor 2SB 148 2SB1386 2sb transistor
    Text: 2SB1386 Transistor, PN P Features Dimensions Units : mm available in MPT3 (MPT,SOT-89 SC-62) package package marking: 2SB1386; BH-*, where ★ is hFE code 2SB1386 (MPT3) low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = -4 A/-0.1A


    OCR Scan     		PDF 2SB1386 OT-89 SC-62) 2SB1386; 2SB1386 147 B transistor Transistor 2SB 148 2sb transistor

    Untitled

    Abstract: No abstract text available
    Text: 2SB1386 Transistor, PNP Features Dimensions Units : mm • available in MPT3 (MPT,SOT-89 SC-62) package • package marking: 2SB1386; BH^, where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = -0.35 V for lc/lB = ~4 A/—0.1 A


    OCR Scan     		PDF 2SB1386 OT-89 SC-62) 2SB1386; 2SB1386 QG14737 2SB1412F5 2SB1412F5

    Untitled

    Abstract: No abstract text available
    Text: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05


    OCR Scan     		PDF 2SC4132 OT-89, SC-62) 2SC4132; 2SC4132

    marking EB 202 transistor

    Abstract: 2SC4672 transistor 2SC4672 ZE TRANSISTOR MARKING
    Text: 2SC4672 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package 2SC4672 (M PT3) +0.2 4 .5 —0 1 • • • package marking: 2SC4672; DK-fr, where ★ is hFE code 1.6 * 0.1 zE L if low collector saturation voltage,


    OCR Scan     		PDF 2SC4672 OT-89, SC-62) 2SC4672; 2SC4672 marking EB 202 transistor transistor 2SC4672 ZE TRANSISTOR MARKING

    2sc4672 marking

    Abstract: 2SC4672 transistor dk 50 5F marking code transistor dk transistor TRANSISTOR dk q FR210 ZI Marking Code transistor TRANSISTOR 2SC T100
    Text: 2SC4672 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SC4672; D K *, where ★ is hFE code • 2SC4672 (MPT3) s _t 0o -2 4/i .5 .i 1.6±0.1 IS". if low collector saturation voltage,


    OCR Scan     		PDF 2SC4672 OT-89, SC-62) 2SC4672; 2sc4672 marking 2SC4672 transistor dk 50 5F marking code transistor dk transistor TRANSISTOR dk q FR210 ZI Marking Code transistor TRANSISTOR 2SC T100

    Untitled

    Abstract: No abstract text available
    Text: 2SD2150 Transistor, NPN Features Dimensions Units : mm • • • available in MPT3 (MPT, SOT-89, SC-62) package package marking: 2SD2150; CF^, where ★ is hFE code 2SD2150 (MPT3) +0.2 4 .5 - 0 .1 lf> 1.6 *0.1 I If excellent current-to-gain characteristics


    OCR Scan     		PDF 2SD2150 OT-89, SC-62) 2SD2150; 2SD2150

    2SD1766

    Abstract: No abstract text available
    Text: 2SD1766 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD1766; DB-*, where ★ is hFg code • • • 2SD1766 (MPT3) +0 2 4 5 —0.1 1 .6 * 0 1 m Ö 1 %2 ¿L. R : H I 1 P q = 2 W, when mounted on 40 x 40 x


    OCR Scan     		PDF 2SD1766 OT-89, SC-62) 2SD1766; 2SB1188 2SD1766

    1SS SOT-23

    Abstract: 1SS TRANSISTOR
    Text: TELEFUNKEN ELECTRONIC fllC D a^EDORb 0005275 R • AL6G BF 989 Marked with: M 89 YilLilFlUJNlKIIMl electronic Creative Technologies N-Channel Dual Gate MOS-Fieldeffect Tetrode • Depletion Mode Applications: Input' and Mixerstages especially for UHFTV-tuners up to 900 MHz


    OCR Scan     		PDF 569-GS 1SS SOT-23 1SS TRANSISTOR