2SC1412
Abstract: VE00 L1102 FMS2A "dual TRANSISTORs" transitron 2SC1412K ums2n 2SC241ZK
Text: Transistors General Purpose Transistor Common Emitter Dual Transistors UMSlN/FMSlA *Features 1) Two 2SA1037AK chips in UMT and SMT packages. @External dimensions (Units: mm) UMSl N IMSl A 2’ Mounting cost and area can be cut in half. l Structure Epitaxial planar type
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2SA1037AK
SC-88A
-50/iA
-50pA
--12V,
AC221
2SC1412
VE00
L1102
FMS2A
"dual TRANSISTORs"
transitron
2SC1412K
ums2n
2SC241ZK
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2SC1412K
Abstract: UMW8 2sc1412 2SC241 baw 92 FMY3 2SC2412AK 2SC141 2SC241ZK
Text: @Features 1’ Two 2SA1037AK in UMT and SMT packages. 2‘ Mounting possible with UMT3 or SMT3 automatic mounting machines. l External dimensions Units: mm UMTl N 2OkO2 IMTl A 13t01 09kOl 065 (3 3‘ Transistor elements are independent, eliminating interference.
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2SA1037AK
13t01
09kOl
SC-88
SC-74
1T106
Cl021
2SC1412K
2SA1037AK
UMW8
2sc1412
2SC241
baw 92
FMY3
2SC2412AK
2SC141
2SC241ZK
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PN3906 TRANSISTOR PNP
Abstract: 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A
Text: m - Transistors RCHV s the leaclng volume manufacturer of surface mount small slgnal transistors These transistors help to reduce size and increase performance of a variety of devices of any kind :c i?"^ PNP SMTYSST3 UMT3 EMT3 t>l- NPN PNP NPN PNP EMT3"' SPT/TO-92
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SPT/TO-92
SPTTO-92
llU--800
loo250-700
loo--300
lOO-60(
250-63t
loo05
loo56
UMT3906
PN3906 TRANSISTOR PNP
2SC174OS
PN3906
PNP switching transistor 2N3906 mhz
SPEC-C37
SPEC-A38
PN3904
MMST8098
transistor bc 588
TRANSISTOR MARKING CODE R2A
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c125t
Abstract: Ho3 501 transistor dtc323tu 94S-751-C343T transistor PNP A124G transistor KD 503 DTC343 kd 2902 kd 503 transistor DTC143TK
Text: Transistors Digital transistors built-in resistors DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA @Features 1) Built-in bias resistors enable the @External dimensions (Units: mm) DTAll4TE configuration of an inverter circuit without connecting external input resistors (see the equivalent cir-
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DTA114TE/DTA114TUA/DTA114TKA/DTA114TSA
005-Lr
DTA114TUA
DTC343TS
-50mA,
f-100MHz
50/1A
rat10
C343T)
c125t
Ho3 501 transistor
dtc323tu
94S-751-C343T
transistor PNP A124G
transistor KD 503
DTC343
kd 2902
kd 503 transistor
DTC143TK
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LX8213-00ISE
Abstract: SOT 23 MOSFET 5-PIN MARKING AK LX8213-12ISE LX8213-33ISE LDO MARKING
Text: PRODUCTION DATASHEET 300mA Low Noise CMOS LDO Regulator TM DESCRIPTION KEY FEATURES The LX8213 also exhibits low output noise with only 60uVRMS over a 100kHz bandwidth. Power supply rejection exceeds 65dB at 100Hz. Other features of LX8213 include an active low shutdown input with a 3MΩ
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300mA
LX8213
60uVRMS
100kHz
100Hz.
OT-23
155mm(
LX8213
LX8213-00ISE
SOT 23 MOSFET
5-PIN MARKING AK
LX8213-12ISE
LX8213-33ISE
LDO MARKING
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Untitled
Abstract: No abstract text available
Text: PRODUCTION DATASHEET 300mA Low Noise CMOS LDO Regulator TM DESCRIPTION KEY FEATURES The LX8213 also exhibits low output noise with only 60uVRMS over a 100kHz bandwidth. Power supply rejection exceeds 65dB at 100Hz. Other features of LX8213 include an active low shutdown input with a 3MΩ
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300mA
LX8213
60uVRMS
100kHz
100Hz.
OT-23
155mm(
LX8213
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Untitled
Abstract: No abstract text available
Text: PRODUCTION DATASHEET 300mA Low Noise CMOS LDO Regulator TM DESCRIPTION KEY FEATURES The LX8213 also exhibits low output noise with only 60uVRMS over a 100kHz bandwidth. Power supply rejection exceeds 65dB at 100Hz. Other features of LX8213 include an active low shutdown input with a 3M
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300mA
LX8213
60uVRMS
100kHz
100Hz.
OT-23
155mm(
LX8213
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Untitled
Abstract: No abstract text available
Text: PRODUCTION DATASHEET 300mA Low Noise CMOS LDO Regulator TM DESCRIPTION KEY FEATURES The LX8213 also exhibits low output noise with only 60uVRMS over a 100kHz bandwidth. Power supply rejection exceeds 65dB at 100Hz. Other features of LX8213 include an active low shutdown input with a 3M
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300mA
LX8213
60uVRMS
100kHz
100Hz.
OT-23
OT-23
155mm(
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MARKING FAl
Abstract: sot23-5 Marking mosfet
Text: PRODUCTION DATASHEET 300mA Low Noise CMOS LDO Regulator TM DESCRIPTION KEY FEATURES The LX8213 also exhibits low output noise with only 60uVRMS over a 100kHz bandwidth. Power supply rejection exceeds 65dB at 100Hz. Other features of LX8213 include an active low shutdown input with a 3MΩ
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LX8213
300mA
LX8213
800mV
155mm(
MARKING FAl
sot23-5 Marking mosfet
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B50A
Abstract: TFS1150A
Text: Filename: tfs1150A.doc Version 1.4 VI TELEFILTER 06.01.2004 Development specification TFS1150 A 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 23 °C dBm 100 100 Characteristics Remark: The Reference level for the relative attenuation a rel of the TFS1150A is the minimum attenuation in the pass band. The minimum attenuation in the pass
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tfs1150A
TFS1150
B50A
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Untitled
Abstract: No abstract text available
Text: Filename: tfs1150A.doc Version 1.4 VI TELEFILTER 06.01.2004 Development specification TFS1150 A 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 23 °C dBm 100 100 Ω Ω Characteristics Remark: The Reference level for the relative attenuation arel of the TFS1150A is the minimum attenuation in the pass band. The minimum attenuation in the pass
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tfs1150A
TFS1150
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4 marking aabs
Abstract: No abstract text available
Text: Filename: tfs 1575.doc Version 1.1 VI TELEFILTER 02.03.2004 Filter specification TFS 1575 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 23 °C dBm 50 50 Ω Ω Characteristics Remark: The maximum attenuation in the pass band is defined as the insertion loss ae. The nominal frequency fN is fixed at 1575,42 MHz without tolerance or limit.
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79015
Abstract: No abstract text available
Text: Filename: tfs 1150a.doc Version 1.6 VI TELEFILTER 28.10.2005 Filter specification TFS 1150A 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 23 °C dBm 100 100 Ω Ω Characteristics Remark: The Reference level for the relative attenuation arel of the TFS1150A is the minimum attenuation in the pass band. The minimum attenuation in the pass
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1150a
TFS1150A
79015
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TFS465D
Abstract: No abstract text available
Text: Filename: TFS465D.doc Version 1.0 VI TELEFILTER 19.11.2003 Preliminary specification TFS 465D 1/5 Measurement condition Ambient temperature: 23 Input power level: Terminating impedances: input: output: °C dBm 50 Ω 50 Ω Characteristics Remark: The maximum attenuation in the pass band is defined as the insertion loss ae. The nominal frequency fN is fixed at 465,0 MHz without any
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TFS465D
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1MN37
Abstract: AAHS298B 8 channel Source Driver
Text: AAHS298B Radiation Tolerant 8-channel Source Driver P RODUCT S PECIFICATION DESCRIPTION IMPORTANT: For the http://www.microsemi.com most current Each output is capable of sourcing 700mA with a withstand voltage of 75V over the full military temperature range.
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AAHS298B
700mA
100kRad
20-pin
AAHS298B
1MN37
8 channel Source Driver
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MAX6365
Abstract: MAX6366 MAX6367 MAX6368 MAX6367PKA44 aabp marking code aaaM AABW marking code AABJ
Text: 19-1658; Rev 4; 5/09 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor
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MAX6365
MAX6368
MAX6368
MAX6366
MAX6367
MAX6367PKA44
aabp
marking code aaaM
AABW
marking code AABJ
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marking code AABJ
Abstract: AACE AABE marking aabi AABJ marking code ce SOT23 marking code R2 sot23 MAX6365 MAX6366 MAX6367
Text: 19-1658; Rev 3; 12/05 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor
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MAX6365
MAX6368
MO178
OT-23,
MAX6368
marking code AABJ
AACE
AABE marking
aabi
AABJ
marking code ce SOT23
marking code R2 sot23
MAX6366
MAX6367
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SOT-23 aabd
Abstract: AACE MAX636 5 PIN SOT-23 MARKING AABB aabi AABJ marking code R2 sot23 AAAX MAX6365-8 AABY
Text: 19-1658; Rev 2; 5/05 SOT23, Low-Power µP Supervisory Circuits with Battery Backup and Chip-Enable Gating Features The MAX6365–MAX6368 supervisory circuits simplify power-supply monitoring, battery-backup control functions, and memory write protection in microprocessor
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MAX6365
MAX6368
MO178.
OT-23,
MAX6368
SOT-23 aabd
AACE
MAX636 5 PIN
SOT-23 MARKING AABB
aabi
AABJ
marking code R2 sot23
AAAX
MAX6365-8
AABY
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Untitled
Abstract: No abstract text available
Text: A L L A P P R O M U S T A N D B E I D A T E D K V E R Y o o s nci a *-3 to R E V o o a o o K! C tc s : O M trH ^ »-3 N x ‘ _• L a l e b P E R r»j o f?r~ DD W t- * to M* H f-3 C i : y-i. . L* E . <o > ^5\ K 1 v- ^ ^•3 M a . W o_ "sf °1 >< 0 1 rS- O
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OCR Scan
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sec 472M
Abstract: kc 472m 472m ceramic capacitor ac 472m F103M KD 222M kc 222m KD 472 M 472M capacitor cd 471k capacitor
Text: CERAMIC CAPACITORS SAFETY RECOGNIZED CAPACITORS-KC TYPE 125VAC to 400VAC n iu f ía la DE Series DIMENSIONS: mm PART NUMBERING SY STEM I TYPE D E715 0 i CAPACITOR TYPE AND SIZE TEM R CH AR. FZ T i TEMPERATURE CHARACTERISTICS Temperature Range B = -25°C to +85°C
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OCR Scan
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125VAC
400VAC
250VAC
sec 472M
kc 472m
472m ceramic capacitor
ac 472m
F103M
KD 222M
kc 222m
KD 472 M
472M capacitor
cd 471k capacitor
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PDF
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BFT65
Abstract: transistor bft65 f451 61 SIEMENS 25813
Text: SIEMENS BFT 65 NPN Silicon RF Transistor • For low-distortion broadband amplifiers up to 1 GHz at collector currents from 10 mA to 30 mA. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BFT 65 Marking BFT 65 Pin Configuration
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OCR Scan
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BFT65
BFT65
Q62702-F451
fl235bDS
transistor bft65
f451
61 SIEMENS
25813
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sot-23 Marking pcA
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Darlington Transistors BCV 27 BCV47 • For general A F applications • High collector current • High current gain • Complementary types: B C V 26, B C V 46 PNP Type Marking Ordering Code (tape and reel) PinC :onfigur ation 2 1 3
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OCR Scan
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BCV47
Q62702-C1474
Q62702-C1501
OT-23
flS35fe
BCV27
sot-23 Marking pcA
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BC 247
Abstract: BC 247 B BC 245 C BC182 BC 248 siemens rs 248 BC 245 BC183 Bc 573 cbc182
Text: SIE D SIEMENS • fl2 3 SbüS GDM],S24 n i HSIEG S I E M EN S A K T I E N G E S E L L S C H A F NPN Silicon AF Transistors BC 182 BC 183 • High current gain • Low collector-emitter saturation voltage • Complementary types: BC 212, BC 213 PNP Type BC
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OCR Scan
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fl23SbÃ
GDmS24
Q62702-C455
Q62702-C372
Q62702-C373
Q62702-C833
Q62702-C388
Q62702-C387
Q62702-C524
fl235bOS
BC 247
BC 247 B
BC 245 C
BC182
BC 248
siemens rs 248
BC 245
BC183
Bc 573
cbc182
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KT 117A
Abstract: SMD CODE HBA
Text: BSP 315P I nf ineon technologies Preliminary Data SIPMOS Small-Signal-T ransistor Features Product Summary • P Channel • Enhancement mode • Avalanche rated • Logic Level • dvldt rated Typ Package BSP 315 P SOT-223 Ordering Code Q67042-S4004 Marking
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OCR Scan
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OT-223
BSP315P
Q67042-S4004
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
B235bG5
D13377T
KT 117A
SMD CODE HBA
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