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    4 AMP NPN DARLINGTON POWER TRANSISTORS Search Results

    4 AMP NPN DARLINGTON POWER TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    4 AMP NPN DARLINGTON POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MJ10004

    Abstract: MJ-10004 OB 2268 darlington power transistor 10a
    Text: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line


    Original     		PDF MJ10004 MJ10004 MJ-10004 OB 2268 darlington power transistor 10a

    2N3773 NPN Audio Power AMP Transistor

    Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
    Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25


    Original     		PDF OT-223 O-225AA O-126) O-220AB O-220 O-218 O-247 O-264 O-204AA O-204AE 2N3773 NPN Audio Power AMP Transistor 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006

    power transistors cross reference

    Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
    Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products


    Original     		PDF MJW16212 225AA) MJE13003 BUH51 power transistors cross reference motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE

    mj10021

    Abstract: ob 2268 60 amp npn darlington power transistors MJ1002
    Text: MJ10021 Darlington Power Transistor NPN silicon power darlington transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.


    Original     		PDF MJ10021 mj10021 ob 2268 60 amp npn darlington power transistors MJ1002

    automotive ignition tip162

    Abstract: TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16
    Text: TIP162 Darlington Power Transistor NPN Silicon Power Darlington Transistors are designed for use in automotive ignition, switching and motor control applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 380V (Minimum). • Collector-Emitter Saturation Voltage


    Original     		PDF TIP162 automotive ignition tip162 TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16

    100 amp npn darlington power transistors

    Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
    Text: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0


    Original     		PDF NTE289A¸ NTE385¸ NTE184¸ NTE196¸ NTE181¸ NTE175¸ NTE311¸ NTE85¸ NTE287¸ NTE382 100 amp npn darlington power transistors NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP

    power switching 10 amp 60V

    Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
    Text: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).


    Original     		PDF MJ10012 power switching 10 amp 60V MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts

    2N6724

    Abstract: 6-725
    Text: Silicon Planar Medium Power Transistors NPN 2N 6724 2N 6725 FEATURES • High gain - 25 00 0 @ 200mA - 4 0 0 0 @ 1A • 1 Amp current capability • Low saturation voltages DESCRIPTION A monolithic double diffused planar power Darlington encapsulated in the popular E-line


    OCR Scan     		PDF 200mA To-92 200mA 500mA 2N6724 6-725

    TL235

    Abstract: D73FY4D1 D72FY4D1
    Text: SURFACE-MOUNT D72FY4D1,2 NPN POWER DARLINGTON TRANSISTORS 80 VOLTS 4 AMP, 15 WATTS Designed for switching applications, ham m er drive, pulse motor drive applications, power amplifier applications. Features: CASE STYLE D-PAK • High DC Current Gain : hFE 1 = 2000(M in.) (V c E * 2V, lc = 1A)


    OCR Scan     		PDF D72FY4D1 D73FY4D1 TL235

    2SD1536

    Abstract: No abstract text available
    Text: 7 0 2 0 = ^ OOOSfl^S 4 B R H n MDE D ROHM CO LTD h 7 > s ' X $ /Transistors 2SD1536M/2SD1861 - 2 S D i 5 3 S ^ f l NPN ^ 7 ^ 2 7 -2 9 y lJ = i> ? -lJ > l'> b 7 > v Z $ Power Amp. 2SD1861 Epitaxial Planar NPN Silicon Darlington Transistors • tt*


    OCR Scan     		PDF 2SD1536M/2SD1861 2SD1861 2SD1536M 2SD1861 2SD1536

    Untitled

    Abstract: No abstract text available
    Text: h 7 > v X ^ / T ransistors 2S D 1661M 2 S D 1866 2SD1661M /2S D 1866 NPN '>U=I>7 ' - U > Y-> h 7 > v '7 7 4 ,^^J±iltlffl/Meclium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistors M M \t;£@ /D im e n s io n s U n it: mm so->4V;VvlP-r • 1) □


    OCR Scan     		PDF 1661M 2SD1661M 2SD1661M

    Untitled

    Abstract: No abstract text available
    Text: h "7 > V 7, $ / Transistors 2SD1379 7 V —^ 2SD1379 NPN '> ,J = l> $ '- ,J > b > h y > y Z 5 i Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • ^ J K r iiiU /D im e n s io n s U n it: mm VJ‘ > 4 V C V ’kJlT 1) ? - ' ) > h > S ^ T ' h FE T * 5


    OCR Scan     		PDF 2SD1379

    D40C4

    Abstract: D40C7 NPN POWER DARLINGTON TRANSISTORS
    Text: 3 8 7 5 0 Í ^ G E SOLID STATE ~~Ql 3075001 001^037 4 ^ J ~ VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS T-33-29 D40C Series 30-50 VOLTS .5 AMP, 6.25 WATTS Designed fordriver, regulator, touch switch, I.C. driver, audio output,'relay substitute, oscillator, servo~ampllfier, and


    OCR Scan     		PDF T-33-29 T0-20Î D40C4 D40C7 NPN POWER DARLINGTON TRANSISTORS

    Untitled

    Abstract: No abstract text available
    Text: 2SD1809 N"7> V 7* $ /Transistors 2 SD 1809 X t f 2 '> T K Z f U - ^ * N PN *> y □ > ? - U > h > F 7 > v 7 $ 4 ,H 7 j i f lHiffl/Meclium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • • ^•ffJ\t>i|S l/D im ensions U n it: mm 1) $ - ' ) >


    OCR Scan     		PDF 2SD1809 500mA)

    Untitled

    Abstract: No abstract text available
    Text: 2SD1536M/2SD1861 h 7 > V ^ ^ / T ransistors I 2S D 1536M 2SD1861 N P y 'j3 > # -'J> b > t'7 > V Z $ N 4 l^ ^ J i i l iffl/M edium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistors • #£ vr>jV;Vdi-r • ^ J fJ \t;ill/D im e n s io n s (U n it: mm


    OCR Scan     		PDF 2SD1536M/2SD1861 1536M 2SD1861 000iii

    A 933 S transistors

    Abstract: S T A 933 2SD1987
    Text: 2SD1987 h 7 > y ^ ^ /T ra n s is to rs 2SD1987 h 7 > y X $ Epitaxial Planar NPN Silicon Transistor Darlington Freq. Power Amp. • • i+Jfi^ iilS l/D im en sion s (Unit : mm) 1) u ; • h > í í i & i ? ' h FE 10.0 *•? 2) I 'V - X 4. 5 r 5 -y z-« • Features


    OCR Scan     		PDF 2SD1987 Pw--100ms A 933 S transistors S T A 933 2SD1987

    2SD2195

    Abstract: No abstract text available
    Text: h "7 > y / I ransistors 2SD2195 2SD 2195 X M$ * y 7 J\>-f Is - +MNPN V lJ □ > h 7 > V * 2 Epitaxial Planar NPN Silicon Transistor Darlington /M e d iu m Power Amp. • il-ffi rfi&H/Dimensions (U nit: mm) 1) IJ > h hFE 2) K fcrtK 3) A . - X • x = 4) Pc = 2 W T 'a fe 5


    OCR Scan     		PDF 2SD2195 2SD2195

    2SD1536

    Abstract: No abstract text available
    Text: b 7 > v 7s $ /Transistors 2SD1536M /2SD1861 7 IS —F B H P N v ' j 3 > h 7 > y ^ O C H 4 C O C M 2oD153oM ^-y>h>»« 2SD1861 Epitaxial Planar NPN Silicon Darlington Transistors * « * i | M i f f l / M e d l u m Power Amp. • W f ^ ä H / D i m e n s i o n s (Unit : mm)


    OCR Scan     		PDF 2SD1536M 2SD1861 2oD153oM 2SD1861 100mA, 2SD1536M/2SD1861 2SD1536

    2SD1783

    Abstract: 2A 5v ZENER DIODE 60V transistor npn 2a FE2000
    Text: Y - j s v T s * ? / Transistors 2SD1783 2S D 1783 I t N P N h> h ÿ > y 'z $ M M M M t J i ^ ^ F S / L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • W fé\f">£ /D im en siô n s Unit : mm S ir > J V ;V ^ T 1) =1 K 7 ^ • /K‘-7 .^ tC 6 0 V C 0 'y x ± 4. 5±0.2


    OCR Scan     		PDF 2SD1783 O-220 2SD1783 2A 5v ZENER DIODE 60V transistor npn 2a FE2000

    SK3180

    Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
    Text: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current


    OCR Scan     		PDF SK3179B SK3178B SK3180 SK3181A SK3181A SK3180 SK3182 SK3183A SK3183A SK3182 SK3220 SK3219 SK3197 SK3188A SK3191 SK3201

    SK9458

    Abstract: SK9446 SK9447 SK9455A SK9452 SK9448 10 amp npn darlington power transistors sk9453 SK9444 SK9450
    Text: THOMSON/ DISTRIBUTOR B IPO LAR TRANSISTORS 5ÛE D • TQ2tjfl73 0 0 0 4 0 3 7 TST com. Maximum Ratings TCE Type Device Polarity & M aterial Breakdown Voltages Application 'complementary device type SK9443 PNP/Si Preamp Input Circuits - NPN/Si Microwave Low-Noise Amp for CATV,


    OCR Scan     		PDF Wbfl73 aODqfl37 SK9443 SK9442 SK9444 SK9445 SK9446 SK9447 SK9447 T-023 SK9458 SK9455A SK9452 SK9448 10 amp npn darlington power transistors sk9453 SK9450

    SK3893

    Abstract: sk3896 SK3936 SK3935 SK3862 SK3865A SK93 sk3948 SK3897 sk3895
    Text: •^THOflSON/ K B DISTRIBUTOR BIPOLAR TRANSISTORS SflE D cont ■ . =105^073 0 0 0 4 5 5 5 13fl ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application Ccomplementary device type Device Power Dissipata Collector Current


    OCR Scan     		PDF SK3861 SK3721 SK3862 SK3722 SK3865A SK3866A SK3867A SK3867A T-036 SK3896 SK3893 sk3896 SK3936 SK3935 SK93 sk3948 SK3897 sk3895

    SK3858

    Abstract: SK3854 SK3466 SK3747 SK3836 SK3718 SK3839 SK3861 SK3859 SK3722
    Text: THOriSON/ D I S T R I B U T O R SflE D ÏI] com. BIPOLAR TRANSISTORS • T05bfl?3 0 0 0 4 5 5 3 3fc.S ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application ‘complementary device type SK3715 PNP/Si *SK3275 AF Driver & Output Stage, FM Brdcst Band


    OCR Scan     		PDF T02bfl bv180 SK3715 SK3275 SK3716A SK3717 SK3718 SK3719 T-041 SK3840 SK3858 SK3854 SK3466 SK3747 SK3836 SK3839 SK3861 SK3859 SK3722

    Untitled

    Abstract: No abstract text available
    Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo


    OCR Scan     		PDF NTE248) NTE247) NTE250) NTE275) NTE244) NTE243) NTE246) NTE245) D003SSD