MJ10004
Abstract: MJ-10004 OB 2268 darlington power transistor 10a
Text: MJ10004 Darlington Power Transistor Switchmode series NPN Silicon Power Darlington Transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line
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MJ10004
MJ10004
MJ-10004
OB 2268
darlington power transistor 10a
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2N3773 NPN Audio Power AMP Transistor
Abstract: 2N5192 BD441 mje15034 mj150* darlington transistor MJ15025 transistor Mj21194 TIP2955 application note MJ31193 mjl4281 MJE18006
Text: BIPOLAR POWER TRANSISTORS SELECTOR GUIDE SELECTION BY PACKAGE IC Range Amps VCE Range (Volts) PD (Watts) SO−8 3.0 30 2.0 (Note 2) SOT−223 0.5−3.0 30 2.0 (Note 1) DPAK 0.5-10 40-450 12.5-25 D2PAK 5.0−15 80−450 50−75 DPAK 0.5-10 40-450 12.5-25
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OT-223
O-225AA
O-126)
O-220AB
O-220
O-218
O-247
O-264
O-204AA
O-204AE
2N3773 NPN Audio Power AMP Transistor
2N5192 BD441
mje15034
mj150* darlington
transistor MJ15025
transistor Mj21194
TIP2955 application note
MJ31193
mjl4281
MJE18006
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power transistors cross reference
Abstract: motorola AN485 transistor master replacement guide buv18a motorola bipolar transistor GUIDE electronic ballast with MJE13003 mj150* darlington BUV488 mje15033 replacement bd135 TRANSISTOR REPLACEMENT GUIDE
Text: Bipolar Power Transistors In Brief . . . Motorola’s broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK at 1.75 watts to the 250 watt TO-3 and TO–264. New products
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MJW16212
225AA)
MJE13003
BUH51
power transistors cross reference
motorola AN485
transistor master replacement guide
buv18a
motorola bipolar transistor GUIDE
electronic ballast with MJE13003
mj150* darlington
BUV488
mje15033 replacement
bd135 TRANSISTOR REPLACEMENT GUIDE
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mj10021
Abstract: ob 2268 60 amp npn darlington power transistors MJ1002
Text: MJ10021 Darlington Power Transistor NPN silicon power darlington transistors with Base-Emitter speedup diode are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switchmode applications.
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MJ10021
mj10021
ob 2268
60 amp npn darlington power transistors
MJ1002
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automotive ignition tip162
Abstract: TIP162 npn darlington transistor 150 watts F 9016 transistor TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON TIP162A tip16
Text: TIP162 Darlington Power Transistor NPN Silicon Power Darlington Transistors are designed for use in automotive ignition, switching and motor control applications. Features: • Collector-Emitter Sustaining Voltage VCEO sus = 380V (Minimum). • Collector-Emitter Saturation Voltage
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TIP162
automotive ignition tip162
TIP162
npn darlington transistor 150 watts
F 9016 transistor
TO-247 NPN SILICON POWER TRANSISTORS DARLINGTON
TIP162A
tip16
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100 amp npn darlington power transistors
Abstract: NTE290A NTE123AP IC 741 amp 10 amp npn darlington power transistors NTE159 NTE2395 nte199 100 amp darlington power transistors power transistor CURRENT SWITCH 0.5 1 AMP
Text: 1995-2012.qxp:QuarkCatalogTempNew 9/11/12 8:56 AM Page 1995 25 Transistors and MOSFETs Silicon Bipolar Transistors Collector to Base V Collector to Emitter (V) Emitter to Base (V) Typical Fwd. Current Gain NPN NPN NPN NPN NPN NPN NPN NPN NPN 0.5 15.0 4.0
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NTE289A¸
NTE385¸
NTE184¸
NTE196¸
NTE181¸
NTE175¸
NTE311¸
NTE85¸
NTE287¸
NTE382
100 amp npn darlington power transistors
NTE290A
NTE123AP
IC 741 amp
10 amp npn darlington power transistors
NTE159
NTE2395
nte199
100 amp darlington power transistors
power transistor CURRENT SWITCH 0.5 1 AMP
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power switching 10 amp 60V
Abstract: MJ10012 MJ1001 8805 VOLTAGE REGULATOR 100 amp npn darlington power transistors NPN DARLINGTON 10A 400V npn darlington transistor 150 watts MJ-10012 npn darlington transistor 200 watts
Text: MJ10012 Darlington Power Transistor NPN Silicon Power Darlington Transistors is a high-voltage, high-current transistor, designed for automotive ignition, switching regulator and motor applications. Features: • Continuous Collector Current - IC = 10A. • Collector-Emitter Sustaining Voltage VCEO sus = 400V (Minimum).
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MJ10012
power switching 10 amp 60V
MJ10012
MJ1001
8805 VOLTAGE REGULATOR
100 amp npn darlington power transistors
NPN DARLINGTON 10A 400V
npn darlington transistor 150 watts
MJ-10012
npn darlington transistor 200 watts
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2N6724
Abstract: 6-725
Text: Silicon Planar Medium Power Transistors NPN 2N 6724 2N 6725 FEATURES • High gain - 25 00 0 @ 200mA - 4 0 0 0 @ 1A • 1 Amp current capability • Low saturation voltages DESCRIPTION A monolithic double diffused planar power Darlington encapsulated in the popular E-line
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200mA
To-92
200mA
500mA
2N6724
6-725
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TL235
Abstract: D73FY4D1 D72FY4D1
Text: SURFACE-MOUNT D72FY4D1,2 NPN POWER DARLINGTON TRANSISTORS 80 VOLTS 4 AMP, 15 WATTS Designed for switching applications, ham m er drive, pulse motor drive applications, power amplifier applications. Features: CASE STYLE D-PAK • High DC Current Gain : hFE 1 = 2000(M in.) (V c E * 2V, lc = 1A)
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D72FY4D1
D73FY4D1
TL235
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2SD1536
Abstract: No abstract text available
Text: 7 0 2 0 = ^ OOOSfl^S 4 B R H n MDE D ROHM CO LTD h 7 > s ' X $ /Transistors 2SD1536M/2SD1861 - 2 S D i 5 3 S ^ f l NPN ^ 7 ^ 2 7 -2 9 y lJ = i> ? -lJ > l'> b 7 > v Z $ Power Amp. 2SD1861 Epitaxial Planar NPN Silicon Darlington Transistors • tt*
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2SD1536M/2SD1861
2SD1861
2SD1536M
2SD1861
2SD1536
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Untitled
Abstract: No abstract text available
Text: h 7 > v X ^ / T ransistors 2S D 1661M 2 S D 1866 2SD1661M /2S D 1866 NPN '>U=I>7 ' - U > Y-> h 7 > v '7 7 4 ,^^J±iltlffl/Meclium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistors M M \t;£@ /D im e n s io n s U n it: mm so->4V;VvlP-r • 1) □
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1661M
2SD1661M
2SD1661M
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Untitled
Abstract: No abstract text available
Text: h "7 > V 7, $ / Transistors 2SD1379 7 V —^ 2SD1379 NPN '> ,J = l> $ '- ,J > b > h y > y Z 5 i Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • ^ J K r iiiU /D im e n s io n s U n it: mm VJ‘ > 4 V C V ’kJlT 1) ? - ' ) > h > S ^ T ' h FE T * 5
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2SD1379
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D40C4
Abstract: D40C7 NPN POWER DARLINGTON TRANSISTORS
Text: 3 8 7 5 0 Í ^ G E SOLID STATE ~~Ql 3075001 001^037 4 ^ J ~ VERY HIGH GAIN NPN POWER DARLINGTON TRANSISTORS T-33-29 D40C Series 30-50 VOLTS .5 AMP, 6.25 WATTS Designed fordriver, regulator, touch switch, I.C. driver, audio output,'relay substitute, oscillator, servo~ampllfier, and
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T-33-29
T0-20Î
D40C4
D40C7
NPN POWER DARLINGTON TRANSISTORS
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Untitled
Abstract: No abstract text available
Text: 2SD1809 N"7> V 7* $ /Transistors 2 SD 1809 X t f 2 '> T K Z f U - ^ * N PN *> y □ > ? - U > h > F 7 > v 7 $ 4 ,H 7 j i f lHiffl/Meclium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • • ^•ffJ\t>i|S l/D im ensions U n it: mm 1) $ - ' ) >
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2SD1809
500mA)
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Untitled
Abstract: No abstract text available
Text: 2SD1536M/2SD1861 h 7 > V ^ ^ / T ransistors I 2S D 1536M 2SD1861 N P y 'j3 > # -'J> b > t'7 > V Z $ N 4 l^ ^ J i i l iffl/M edium Power Amp. Epitaxial Planar NPN Silicon Darlington Transistors • #£ vr>jV;Vdi-r • ^ J fJ \t;ill/D im e n s io n s (U n it: mm
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2SD1536M/2SD1861
1536M
2SD1861
000iii
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A 933 S transistors
Abstract: S T A 933 2SD1987
Text: 2SD1987 h 7 > y ^ ^ /T ra n s is to rs 2SD1987 h 7 > y X $ Epitaxial Planar NPN Silicon Transistor Darlington Freq. Power Amp. • • i+Jfi^ iilS l/D im en sion s (Unit : mm) 1) u ; • h > í í i & i ? ' h FE 10.0 *•? 2) I 'V - X 4. 5 r 5 -y z-« • Features
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2SD1987
Pw--100ms
A 933 S transistors
S T A 933
2SD1987
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2SD2195
Abstract: No abstract text available
Text: h "7 > y / I ransistors 2SD2195 2SD 2195 X M$ * y 7 J\>-f Is - +MNPN V lJ □ > h 7 > V * 2 Epitaxial Planar NPN Silicon Transistor Darlington /M e d iu m Power Amp. • il-ffi rfi&H/Dimensions (U nit: mm) 1) IJ > h hFE 2) K fcrtK 3) A . - X • x = 4) Pc = 2 W T 'a fe 5
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2SD2195
2SD2195
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2SD1536
Abstract: No abstract text available
Text: b 7 > v 7s $ /Transistors 2SD1536M /2SD1861 7 IS —F B H P N v ' j 3 > h 7 > y ^ O C H 4 C O C M 2oD153oM ^-y>h>»« 2SD1861 Epitaxial Planar NPN Silicon Darlington Transistors * « * i | M i f f l / M e d l u m Power Amp. • W f ^ ä H / D i m e n s i o n s (Unit : mm)
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2SD1536M
2SD1861
2oD153oM
2SD1861
100mA,
2SD1536M/2SD1861
2SD1536
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2SD1783
Abstract: 2A 5v ZENER DIODE 60V transistor npn 2a FE2000
Text: Y - j s v T s * ? / Transistors 2SD1783 2S D 1783 I t N P N h> h ÿ > y 'z $ M M M M t J i ^ ^ F S / L o w Freq. Power Amp. Epitaxial Planar NPN Silicon Darlington Transistor • W fé\f">£ /D im en siô n s Unit : mm S ir > J V ;V ^ T 1) =1 K 7 ^ • /K‘-7 .^ tC 6 0 V C 0 'y x ± 4. 5±0.2
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2SD1783
O-220
2SD1783
2A 5v ZENER DIODE
60V transistor npn 2a
FE2000
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SK3180
Abstract: SK3181A SK3220 SK3183A SK3219 SK3197 SK3182 SK3188A SK3191 SK3201
Text: THOMSON/ DISTRIBUTOR BIPOUR TRANSISTORS SäE D • T05t.â?3 0 0 0 4 0 1 7 Obi ■ TCSK cw t . Maximum Ratings TCE Type Breakdown Voltages Device Polarity & Material Application Ccomplementary device type SK3179B Device Power Dissipata Collector Current
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SK3179B
SK3178B
SK3180
SK3181A
SK3181A
SK3180
SK3182
SK3183A
SK3183A
SK3182
SK3220
SK3219
SK3197
SK3188A
SK3191
SK3201
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SK9458
Abstract: SK9446 SK9447 SK9455A SK9452 SK9448 10 amp npn darlington power transistors sk9453 SK9444 SK9450
Text: THOMSON/ DISTRIBUTOR B IPO LAR TRANSISTORS 5ÛE D • TQ2tjfl73 0 0 0 4 0 3 7 TST com. Maximum Ratings TCE Type Device Polarity & M aterial Breakdown Voltages Application 'complementary device type SK9443 PNP/Si Preamp Input Circuits - NPN/Si Microwave Low-Noise Amp for CATV,
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Wbfl73
aODqfl37
SK9443
SK9442
SK9444
SK9445
SK9446
SK9447
SK9447
T-023
SK9458
SK9455A
SK9452
SK9448
10 amp npn darlington power transistors
sk9453
SK9450
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SK3893
Abstract: sk3896 SK3936 SK3935 SK3862 SK3865A SK93 sk3948 SK3897 sk3895
Text: •^THOflSON/ K B DISTRIBUTOR BIPOLAR TRANSISTORS SflE D cont ■ . =105^073 0 0 0 4 5 5 5 13fl ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application Ccomplementary device type Device Power Dissipata Collector Current
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SK3861
SK3721
SK3862
SK3722
SK3865A
SK3866A
SK3867A
SK3867A
T-036
SK3896
SK3893
sk3896
SK3936
SK3935
SK93
sk3948
SK3897
sk3895
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SK3858
Abstract: SK3854 SK3466 SK3747 SK3836 SK3718 SK3839 SK3861 SK3859 SK3722
Text: THOriSON/ D I S T R I B U T O R SflE D ÏI] com. BIPOLAR TRANSISTORS • T05bfl?3 0 0 0 4 5 5 3 3fc.S ■ TCSK Maximum Ratings TCE Type Device Polarity & Material Breakdown Voltages Application ‘complementary device type SK3715 PNP/Si *SK3275 AF Driver & Output Stage, FM Brdcst Band
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T02bfl
bv180
SK3715
SK3275
SK3716A
SK3717
SK3718
SK3719
T-041
SK3840
SK3858
SK3854
SK3466
SK3747
SK3836
SK3839
SK3861
SK3859
SK3722
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Untitled
Abstract: No abstract text available
Text: BI-POLAR TRANSISTORS Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) Typical Forward Current Gain Maximum Collector Power Dissipation (Watts) Typical Freq. (MHz) Case Style Diag. No. Maximum Collector Current (Amps) BVCeo BVEbo
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NTE248)
NTE247)
NTE250)
NTE275)
NTE244)
NTE243)
NTE246)
NTE245)
D003SSD
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