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    12N60 equivalent

    Abstract: 12N60 mosfet 600V 60A TO-220 silan mosfet 600V 60A TO-220 Power MOSFET Wafer
    Text: 3VD499600YL 3VD499600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD499600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø 3 1 Advanced termination scheme to provide enhanced


    Original     		PDF 3VD499600YL 3VD499600YL O-220 12N60; 12N60 equivalent 12N60 mosfet 600V 60A TO-220 silan mosfet 600V 60A TO-220 Power MOSFET Wafer

    12N60

    Abstract: 12n60 dc
    Text: 3VD499600YL 3VD499600YL 高压MOSFET芯片 描述 Ø 3VD499600YL为采用硅外延工艺制造的N沟道增 强型600V高压MOS功率场效应晶体管； 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；


    Original     		PDF 3VD499600YL 3VD499600YL 3VD499600YLN 600VMOS O-220 12N60 12N60 12n60 dc