Untitled
Abstract: No abstract text available
Text: 3VD324500YL 3VD324500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD324500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in ¾ 3 1 advanced silicon epitaxial planar technology; Advanced termination scheme to provide enhanced
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3VD324500YL
3VD324500YL
O-220
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500VMOS
Abstract: No abstract text available
Text: 3VD324500YL 3VD324500YL 高压MOSFET芯片 描述 ¾ 3VD324500YL为采用硅外延工艺制造的N沟道增 强型500V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；
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3VD324500YL
3VD324500YL
3VD324500YLN
500VMOS
O-220
500VVGS
10VID
20VVDS
500VMOS
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Untitled
Abstract: No abstract text available
Text: 3VD324500YL 3VD324500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD324500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified;
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Original
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PDF
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3VD324500YL
3VD324500YL
O-220
3780m
2780m
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3780m
Abstract: No abstract text available
Text: 3VD324500YL 3VD324500YL 高压MOSFET芯片 描述 Ø 3VD324500YL为采用硅外延工艺制造的N沟道增 强型500V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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Original
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PDF
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3VD324500YL
3VD324500YL
3VD324500YLN
500VMOS
O-220
3780m
2780m
500VVGS
3780m
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