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    3V DC MOTOR 20MA Search Results

    3V DC MOTOR 20MA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TB67H451AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67H450AFNG Toshiba Electronic Devices & Storage Corporation Brushed Motor Driver/1ch/Vout(V)=50/Iout(A)=3.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S580FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=1.6 Visit Toshiba Electronic Devices & Storage Corporation
    TB67S581FNG Toshiba Electronic Devices & Storage Corporation Stepping Motor Driver/Unipolar Type/Vout(V)=50/Iout(A)=2.5 Visit Toshiba Electronic Devices & Storage Corporation
    TB67B001BFTG Toshiba Electronic Devices & Storage Corporation Brushless Motor Driver/3 Phases Driver/Vout(V)=25/Iout(A)=3/Square Wave Visit Toshiba Electronic Devices & Storage Corporation

    3V DC MOTOR 20MA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    LA5527

    Abstract: EN2071C
    Text: Ordering number:EN2071C Monolithic Linear IC LA5527 Low-Voltage DC Motor Speed Controller Overview Package Dimensions Especially suited for controlling speed of a low-voltage 3V min. DC motor for cassette tape recorders, 8mm motion-picture cameras, record players.


    Original     		PDF EN2071C LA5527 048A-DIP6 LA5527] LA5527 EN2071C

    max 32321

    Abstract: LA5528N LA5528NM
    Text: Ordering number:EN3232A Monolithic Linear IC LA5528N, 5528NM Low-Voltage DC Motor Speed Controllers Overview Package Dimensions Especially suited for controlling speed of a low-voltage 3V min. DC motor for cassette tape recorders, 8mm motion-picture cameras, record players.


    Original     		PDF EN3232A LA5528N, 5528NM 3001B-DIP8 LA5528N] LA5528N LA5528NM 3232B-MFP8 LA5528NM] max 32321 LA5528N LA5528NM

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES ・High DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ・High Collector Breakdown Voltage : VCEO=100V(Min.)


    Original     		PDF TIP122

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES ・High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. ・High Collector Breakdown Voltage : VCEO=-120V(Min.)


    Original     		PDF TIP127 -120V -100V, -10mA, -12mA -20mA

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.)


    Original     		PDF KTB1423 -120V KTD1413.

    KTB1423

    Abstract: KTD1413
    Text: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P FEATURES B E G High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. High Collector Breakdown Voltage : VCEO=-120V (Min.)


    Original     		PDF KTB1423 -120V KTD1413. KTB1423 KTD1413

    KTB1423

    Abstract: KTD1413
    Text: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P E B FEATURES S G ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. ᴌHigh Collector Breakdown Voltage : VCEO=-120V (Min.)


    Original     		PDF KTB1423 -120V KTD1413. KTB1423 KTD1413

    KTD1413

    Abstract: KTB1423
    Text: SEMICONDUCTOR KTB1423 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. A C P E B FEATURES S G ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. ᴌHigh Collector Breakdown Voltage : VCEO=-120V (Min.)


    Original     		PDF KTB1423 -120V KTD1413. KTD1413 KTB1423

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.)


    Original     		PDF TIP122

    TRANSISTOR tip122

    Abstract: TIP122 tip122 data TRANSISTOR tip122 features
    Text: SEMICONDUCTOR TIP122 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=3V, IC=3A. ᴌHigh Collector Breakdown Voltage : VCEO=100V(Min.)


    Original     		PDF TIP122 TRANSISTOR tip122 TIP122 tip122 data TRANSISTOR tip122 features

    TIP127

    Abstract: tip127 data
    Text: SEMICONDUCTOR TIP127 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. E A R S F FEATURES P Q D B ᴌHigh DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. ᴌHigh Collector Breakdown Voltage : VCEO=-120V(Min.)


    Original     		PDF TIP127 -120V TIP127 tip127 data

    Untitled

    Abstract: No abstract text available
    Text: LOW VOLTAGE DC MOTOR CONTROLLER NJM2606/2606A The NJM2606A is integrated circuit with wide operating supply voltage range for DC motor speed control. Especially, the NJM2606A is suited for 3V or 6V DC motor control. • Absolute M axim um Ratings Ta=25°C


    OCR Scan     		PDF NJM2606/2606A NJM2606A 700mA 500mW 300mW 100msec

    2SB1641

    Abstract: 2SD2526
    Text: TOSHIBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ie = 3A) Low Saturation Voltage :


    OCR Scan     		PDF 2SD2526 2SB1641 2SB1641 2SD2526

    KTD1413

    Abstract: No abstract text available
    Text: SEMICONDUCTOR TECHNICAL DATA KTB1423 EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at V ce=-3V , IC=-3A . • High Collector Breakdown Voltage : V c eo = _ 120V (Min.)


    OCR Scan     		PDF KTB1423 KTD1413. KTD1413

    2SB1641

    Abstract: 2SD2526
    Text: TO SH IBA 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE = 3V, Ic = 3A) Low Saturation Voltage :


    OCR Scan     		PDF 2SD2526 2SB1641 2SB1641 2SD2526

    tip 127

    Abstract: TIP127 tip 127 TRANSISTOR equivalent
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR TECHNICAL DATA TIP127 EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : VcEO=_120V(Min.)


    OCR Scan     		PDF -120V tip 127 TIP127 tip 127 TRANSISTOR equivalent

    Untitled

    Abstract: No abstract text available
    Text: 2SB1381 SILICON PNP TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, °ULSE MOTOR DRIVE APPLICATIONS. Unit in mm . High DC Current Gain : hFE=1500 Min. (Vc e =-3V, Ic =-2.5A) . Low Saturation Voltage : VcE(sat)=-1.5V(Max.)(Ic=-2.5A) . Complementary to 2SD2079.


    OCR Scan     		PDF 2SB1381 2SD2079.

    A1046

    Abstract: h10u BA 7515
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2079 HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. . High DC Current Gain Unit in 10±0.3 : hFE= 2000 Min. (Vc e =3V, Ic =3A) 03.2 ±0.2 s . Low Saturation Voltage: Vc£(sat)=1.5V(Max.)(Ic “3A)


    OCR Scan     		PDF 2SD2079 2SB1381. A1046 h10u BA 7515

    TIP122

    Abstract: transistor tip 122 equivalent transistor tip122
    Text: SEMICONDUCTOR TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TIP122 EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at VCe=3V, IC=3A. • High Collector Breakdown Voltage : VcEO=100V(Min.)


    OCR Scan     		PDF 220AB TIP122 transistor tip 122 equivalent transistor tip122

    2SD2131

    Abstract: No abstract text available
    Text: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2131 DARLINGTON POWER HIGH POWER SWITCHING APPLICATIONS. Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10±0.3 . High DC Current Gain #3.2 ±0.2 : hjr]7=2000(Min.) (Vc e =3V, Ic“ 3A) . Low Saturation Voltage: VpE(sat)= 1 •5V(Max.)(Ip=3A)


    OCR Scan     		PDF 2SD2131 150mJ 2SD2131

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A 2SD2526 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2526 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ± 0.2 • • • i 61.2 High DC Current Gain : hFE = 2000 Min. (Vce = 3V, Ic = 3A)


    OCR Scan     		PDF 2SD2526 2SB1641

    KTD1413

    Abstract: KTB1423
    Text: KOREA ELECTRONICS CO.,LTD. SEMICONDUCTOR T E C H N IC A L D A T A KTB1423 EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATIONS. HAMMER DRIVER, PULSE MOTOR DRIVER APPLICATIONS. FEATURES • High DC Current Gain : hFE=1000 Min. at VCE=-3V, IC=-3A. • High Collector Breakdown Voltage : V ceo=_ 120V (Min.)


    OCR Scan     		PDF KTB1423 -120V KTD1413. KTD1413 KTB1423

    2SD2131

    Abstract: ZENNER
    Text: TO SH IBA 2SD2131 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2 S D 2 1 31 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 r ^3.2 ± 0.2 2.7±Q 2 CO • High DC Current Gain : hFE = 2000 (Min.) (VCE = 3V, Ic = 3A)


    OCR Scan     		PDF 2SD2131 150mJ 2SD2131 ZENNER

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A 2SD2131 2 S D 2 1 31 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 • High DC Current Gain : hFE = 2000 (Min.) (VCE = 3V, Ic = 3A)


    OCR Scan     		PDF 2SD2131 150mJ