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    3SK29 Search Results

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    3SK29 Price and Stock

    Rochester Electronics LLC 3SK295ZQ-TL-E

    SMALL SIGNAL N-CHANNEL MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3SK295ZQ-TL-E Bulk 36,000 1,082
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    Toshiba America Electronic Components 3SK293(TE85L,F)

    RF MOSFET 6V USQ
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    DigiKey 3SK293(TE85L,F) Digi-Reel 34,336 1
    • 1 $0.71
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    3SK293(TE85L,F) Cut Tape 34,336 1
    • 1 $0.71
    • 10 $0.442
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    • 1000 $0.19484
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    3SK293(TE85L,F) Reel 30,000 3,000
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    EBV Elektronik 3SK293(TE85L,F) 27 Weeks 6,000
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    Rochester Electronics LLC 3SK298ZP-TL-E

    SMALL SIGNAL N-CHANNEL MOSFET
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    DigiKey 3SK298ZP-TL-E Bulk 33,000 902
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    Toshiba America Electronic Components 3SK294(TE85L,F)

    RF MOSFET 6V USQ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3SK294(TE85L,F) Digi-Reel 10,610 1
    • 1 $0.57
    • 10 $0.351
    • 100 $0.57
    • 1000 $0.15124
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    3SK294(TE85L,F) Cut Tape 10,610 1
    • 1 $0.57
    • 10 $0.351
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    3SK294(TE85L,F) Reel 6,000 3,000
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    Verical 3SK294(TE85L,F) 1,916 165
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    Chip1Stop 3SK294(TE85L,F) Cut Tape 1,916
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    • 10 $0.336
    • 100 $0.153
    • 1000 $0.113
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    Toshiba America Electronic Components 3SK292(TE85R,F)

    RF MOSFET 6V SMQ
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 3SK292(TE85R,F) Digi-Reel 1
    • 1 $0.51
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    3SK29 Datasheets (48)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3SK29 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3SK29 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3SK29 Unknown FET Data Book Scan PDF
    3SK290 Hitachi Semiconductor Silicon N-Channel Dual Gate MOS FET Original PDF
    3SK290 Renesas Technology Silicon N-Channel Dual Gate MOS FET Original PDF
    3SK291 Toshiba Japanese - Transistors Original PDF
    3SK291 Toshiba Field Effect Transistor Silicon N Channel Dual Gate MOS Type Scan PDF
    3SK291 Toshiba Silicon N-channel dual gate MOS type field effect transistor for TV tuner, UHF RF applications Scan PDF
    3SK291(TE85L,F) Toshiba RF FETs, Discrete Semiconductor Products, MOSFET N-CH SMQ Original PDF
    3SK292 Toshiba Transistors Original PDF
    3SK292 Toshiba Japanese - Transistors Original PDF
    3SK292 Toshiba 3SK292 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-3J1A, 4 PIN, FET RF Small Signal Original PDF
    3SK292 Toshiba Field Effect Transistor Silicon N Channel Dual Gate MOS Type Scan PDF
    3SK292 Toshiba Silicon N-channel dual gate MOS type field effect transistor for TV tuner VHF RF applications Scan PDF
    3SK292(TE85R,F) Toshiba RF FETs, Discrete Semiconductor Products, MOSFET N-CH 12.5 30MA SMQ Original PDF
    3SK293 Toshiba Japanese - Transistors Original PDF
    3SK293 Toshiba Field Effect Transistor Silicon N-Channel Dual Gate MOS Type Scan PDF
    3SK293 Toshiba Silicon N-channel dual gate MOS type field effect transistorfor high power switching, motor control applications Scan PDF
    3SK293(TE85L,F) Toshiba 3SK293 - Trans MOSFET N-CH 12.5V 0.03A 4-Pin SMQ T/R Original PDF
    3SK294 Toshiba 3SK294 - TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, 2-2K1B, 4 PIN, FET RF Small Signal Original PDF

    3SK29 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: 3SK293 東芝電界効果トランジスタ シリコンNチャネルデュアルゲートMOS形 3SK293 TVチューナ, UHF高周波増幅用 • 単位: mm 混変調特性が非常に優れています。 • 帰還容量が小さい。 : Crss = 16 fF 標準


    Original     		PDF 3SK293

    3SK296

    Abstract: DSA003641
    Text: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 Note: 1. Source 2. Gate1


    Original     		PDF 3SK296 ADE-208-388A 3SK296 DSA003641

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline 3SK295 Absolute Maximum Ratings Ta = 25°C Item Symbol


    Original     		PDF 3SK295 ADE-208-387 Hitachi DSA002759

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 3SK296 Silicon N-Channel Dual Gate MOS FET ADE-208-388 1st. Edition Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB Typ. at f = 900 MHz • Capable of low voltage operation Outline 3SK296 Absolute Maximum Ratings Ta = 25°C Item Symbol


    Original     		PDF 3SK296 ADE-208-388 Hitachi DSA002759

    3SK295

    Abstract: DSA003641
    Text: 3SK295 Silicon N-Channel Dual Gate MOS FET ADE-208-387A Z 2nd. Edition Mar. 2001 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source 2. Gate1


    Original     		PDF 3SK295 ADE-208-387A 3SK295 DSA003641

    3SK294

    Abstract: No abstract text available
    Text: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 20 fF typ. • Low noise figure: NF = 1.4dB (typ.)


    Original     		PDF 3SK294 3SK294

    3SK291

    Abstract: No abstract text available
    Text: 3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 0.016 pF typ. • Low noise figure: NF = 1.5dB (typ.)


    Original     		PDF 3SK291 3SK291

    3SK291

    Abstract: Tv Diagram toshiba
    Text: 3SK291 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK291 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 0.016 pF typ. • Low noise figure: NF = 1.5dB (typ.)


    Original     		PDF 3SK291 3SK291 Tv Diagram toshiba

    3SK295

    Abstract: 3SK295ZQ-TL-E
    Text: 3SK295 Silicon N-Channel Dual Gate MOS FET REJ03G0814-0300 Previous ADE-208-387A Rev.3.00 Aug. 10, 2005 Application • UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline RENESAS Package code: PLSP0004ZA-A


    Original     		PDF 3SK295 REJ03G0814-0300 ADE-208-387A) PLSP0004ZA-A 3SK295 3SK295ZQ-TL-E

    3SK294

    Abstract: No abstract text available
    Text: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance · Low reverse transfer capacitance: Crss = 20 fF typ. · Low noise figure: NF = 1.4dB (typ.)


    Original     		PDF 3SK294 3SK294

    Untitled

    Abstract: No abstract text available
    Text: 3SK295 Silicon N-Channel Dual Gate MOS FET REJ03G0814-0300 Previous ADE-208-387A Rev.3.00 Aug. 10, 2005 Application • UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation Outline RENESAS Package code: PLSP0004ZA-A


    Original     		PDF 3SK295 REJ03G0814-0300 ADE-208-387A) PLSP0004ZA-A

    NEC U71

    Abstract: 3SK299 U71 nec
    Text: DATA SHEET MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES PACKAGE DIMENSIONS • Suitable for use as RF amplifier in UHF TV tuner. in millimeters –4.5 V –4.5


    Original     		PDF 3SK299 NEC U71 3SK299 U71 nec

    3SK295

    Abstract: Hitachi DSA00118
    Text: 3SK295 Silicon N Channel Dual Gate MOS FET Application UHF RF amplifier MPAK-4 Features 2 3 • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 3SK295 3SK295 Hitachi DSA00118

    Hitachi DSA00118

    Abstract: 3sk298
    Text: 3SK298 Silicon N Channel Dual Gate MOS FET Application UHF / VHF RF amplifier CMPAK-4 Features 2 3 • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings Ta = 25°C


    Original     		PDF 3SK298 Hitachi DSA00118 3sk298

    3SK297

    Abstract: DSA003642
    Text: 3SK297 Silicon N-Channel Dual Gate MOS FET ADE-208-389A Z 2nd. Edition Mar. 2001 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline MPAK-4 2 3 1 4 Note: 1. Source


    Original     		PDF 3SK297 ADE-208-389A 3SK297 DSA003642

    Untitled

    Abstract: No abstract text available
    Text: 3SK292 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 20 fF typ. • Low noise figure: NF = 1.4dB (typ.)


    Original     		PDF 3SK292

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK291 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK291 TV TUNER, UHF RF AMPLIFIER APPLICATIONS : • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 0.016pF Typ. • Low Noise Figure


    OCR Scan     		PDF 3SK291 016pF

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 3SK292 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK292 mm TV TUNER, VHF RF AM PLIFIER APPLICATION • Superior Cross Modulation Performance. • Low Reverse Transfer Capacitance : Crgg = 20fF Typ. • Low Noise Figure


    OCR Scan     		PDF 3SK292

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET NEC MES FIELD EFFECT TRANSISTOR 3SK299 RF AMP. FOR UHF TV TUNER N-CHANNEL GaAs DUAL-GATE MES FIFLD-EFFECT TRANSISTOR 4 PIN SMALL MINI MOLD FEATURES P A C K A G E D IM E N S IO N S Suitable for use as R F am plifier in U H F T V tuner. in millimeters


    OCR Scan     		PDF 3SK299

    3SK294

    Abstract: No abstract text available
    Text: TO SHIBA 3SK294 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK294 TV TUNER, VHF RF AM PLIFIER APPLICATION • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 20fF Typ. • Low Noise Figure : NF = 1.4dB (Typ.)


    OCR Scan     		PDF 3SK294 500MHz

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK293 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK293 TV TUNER, UHF RF AM PLIFIER APPLICATIONS • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 16fF Typ. • Low Noise Figure : NF= 1.5dB (Typ.)


    OCR Scan     		PDF 3SK293

    3SK291

    Abstract: No abstract text available
    Text: TOSHIBA 3SK291 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK291 mm TV TUNER, UHF RF AM PLIFIER APPLICATIONS • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 0.016pF Typ. • Low Noise Figure


    OCR Scan     		PDF 3SK291 016pF

    3SK293

    Abstract: No abstract text available
    Text: TO SHIBA 3SK293 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK293 TV TUNER, UHF RF AM PLIFIER APPLICATIONS • Superior Cross Modulation Performance • Low Reverse Transfer Capacitance : Crss = 16fF Typ. • Low Noise Figure : NF = 1.5dB (Typ.)


    OCR Scan     		PDF 3SK293 3SK293

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 3SK292 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N-CHANNEL DUAL GATE MOS TYPE 3SK292 TV TUNER, VHF RF AM PLIFIER APPLICATION • Unit in mm Superior Cross Modulation Performance. • L o w R everse T ran sfe r Capacitanee • L o w N oise F ig u re : C rss —20fF Typ .


    OCR Scan     		PDF 3SK292 --20fF