GX-18H
Abstract: GX-30MB GX-30M
Text: A m p lifie r b u ilt-in ty p e ^ GX series k Inductive proximity^ r sensors j Wide variation • Ultra small sensor The smallest 03.8mm size GX-3S and GX-3SB in the industry enabling installation anywhere. • Long-distance sensing The non-flush (GX-18H and units suffied by "ML") type is the
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GX-18H
protectio12ML
GX-12MLB
GX-18ML
GX-18MLB
GX-18H
GX-30MB
GX-30M
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thermistor 40k
Abstract: NEC LASER DIODE PIN DIP thermo electrical cooler module NDL5762P
Text: N E C ELECTRONICS INC bEE D • b4B?S25 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm OPTICAL FIBER C O M M U N IC A TIO N S InGaAsP DC-PBH PULSED LASER DIODE MODULE DESCRIPTION NDL5762P is a 1310 nm pulsed laser diode DIP module w ith singlemode fiber and internal thermo-electric cooler. It is
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b4S7S25
NDL5762P
NDL5762P
400mA,
JT-40K
T-40K
thermistor 40k
NEC LASER DIODE PIN DIP
thermo electrical cooler module
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3SB diode
Abstract: No abstract text available
Text: NEC ELECTRONICS INC LEE D • b42?SS5 0037^05 3Sb « N E C E DATA SHEET NEC LASER DIODE MODULE NDL5762P ELECTRON DEVICE 1 310 nm O P T IC A L F IB ER C O M M U N IC A T IO N S InG aAsP D C -P B H P U L SE D L A SE R D IO D E M O D U L E DESCRIPTIO N N D L 5 7 6 2 P is a 1 3 1 0 nm pulsed laser diode D IP module with singlemode fiber and internal thermo-electric cooler. It is
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NDL5762P
T-40K
JT-40K
3SB diode
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S3V 8* Rectifier
Abstract: s4vb s4vb 10 46 s4vb bridge rectifier
Text: Large Ifsm I-I S MD • — 0 .8 -1 A - 0 .4 -1 A 1-1.5A Bridge * • S I P - 4~6A *?i gDiodes j 1 0 -2 5 A * S Q IP ;• 2 .3 -2 0 A 2 -1 0 A 1 5 -5 0 A * SI ZB □ S1NB □ S1W B A D S1YB □ S1ZB □ S1NB □ S1 WB(A) □ S1VB □ D2SBA □ — D 2SBD L — Low Noise
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D10XB
D15XB
D20XB
D25XB
S3V 8* Rectifier
s4vb
s4vb 10 46
s4vb bridge rectifier
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES 1.5W Part# 1N5913B 1N5914B 1N5915B 1N5916B 1N5917B 1N5918B 1N5919B 1N5920B 1N5921B 1N5922B 1N5923B 1N5924B 1N5925B 1N5926B 1N5927B 1N5928B 1N5929B 1N5930B 1N5931B 1N5932B 1N5933B 1N5934B 1IM5935B 1N5936B 1N5937B 1N5938B 1N5939B 1N5940B 1N5941B
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1N5913B
1N5914B
1N5915B
1N5916B
1N5917B
1N5918B
1N5919B
1N5920B
1N5921B
1N5922B
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Untitled
Abstract: No abstract text available
Text: SIM-20SB GaAs infrared light-emitting diode This infrared GaAs LED is housed in a compact, transparent plastic housing. It has a 1.85 mm diameter lens and radiates at a wavelength of 950 nm making it suitable for silicon light detectors. Matched with the RPM-20PB light
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SIM-20SB
RPM-20PB
100mA
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Untitled
Abstract: No abstract text available
Text: MICROSEMI CORP/ lilATERTOUN SDE D RECTIFIER ASSEMBLIES • Dai22bl 2flb ■ U N I T JANTX 483-1 Three Phase Bridges, 25 Amp, M ilitary Approved jantx 483-3 DESCRIPTION This military high-current three phase bridge series is assembled with diodes which have been subjected to TX type
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Dai22bl
MIL-S-19500/483
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Untitled
Abstract: No abstract text available
Text: OPTEK Product Bulletin OP168F June 1996 G aA s Plastic Infrared Emitting Diodes Types OP168FA, OP168FB, OP168FC Features • Flat lensed for wide radiation angle • Easily stackable on 0.100 inch 2.54mm hole centers • Mechanically and spectrally matched
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OP168F
OP168FA,
OP168FB,
OP168FC
OP508F
OP538F
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Untitled
Abstract: No abstract text available
Text: DIODE MODULE DD30HB/KD30HB UL!E76102 M Power Diode Module D D 30 H B series are designed for various rectifier circuits. D D 30 H B has two diode chips connected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 1,600 V is
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DD30HB/KD30HB
E76102
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BYV24-800R
Abstract: BYV24-1000 3 phase ac motor speed control
Text: BYV24 SERIES PHILIPS INTERNATI ON AL SbE D I TllOfiSb 0041314 b47 • P H I N FAST SOFT-RECOVERY RECTIFIER DIODES Fast soft-recovery diodes in DO-4 metal envelopes especially suitable for operation as main and commutating diodes in 3-phase a.c. motor speed control inverters and in high frequency power
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BYV24
BYV24-800
BYV24-1000.
BYV24-800R
BYV24-1000R.
T-03-17
7110flEb
BYV24-1000
3 phase ac motor speed control
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RECTIFIER DIODES PHILIPS
Abstract: BYV24-800R BYV24 BYV24-800 byv24 1000 BYV24-1000 BYV24-1000R
Text: BYV24 SERIES _ T - < 2 2 - / 7 PHILIPS INTERN A T I O N A L SbE ]> 711005b 0041314 b47 • P H I N FAST SOFT-RECOVERY RECTIFIER DIODES Fast soft-recovery diodes in DO-4 metal envelopes especially suitable for operation as main and commutating diodes in 3-phase a.c. motor speed control inverters and in high frequency power
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BYV24
711002b
BYV24-800
BYV24-1000.
BYV24-800R
BYV24-1000R.
0D413SQ
RECTIFIER DIODES PHILIPS
byv24 1000
BYV24-1000
BYV24-1000R
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bel t3 15a 250v
Abstract: WP90400 zener diode 5t 3AG8 ceramic tube fuse CSA222 3ab1 t125 fuse marking 8AG 3SB400
Text: Bel Fuse [ b e l ] was founded in 1 9 4 9 to manufacture and sell electronic components, bel offers fuse products ranging from standard glass fuses to miniature and micro fuses. The company has an engineering staff with extensive applications experience and
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Untitled
Abstract: No abstract text available
Text: Single In-line Package B rid g e D io d e • O U T L IN E D IM E N S IO N S D3SBAD 600V 4A Unit • mm ■ R A T IN G S Absolute Maximum Ratings m g IE tj- & It em Symbol s -g -g is s /t O perating J u n c tio n Tem perature - £ A M % lK J ± Average Rectified Forward Current
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fz44
Abstract: IDM144 cepfz44 CEBFZ44 OC310 C3108
Text: I '""II •1 1 1 .¡In 1 1 mu CEPFZ44/CEBFZ44 M arch 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D • 5 5 V , 60A , Rds on =25itiQ @V gs =1 OV • Super high dense cell design for extremely low Rds(on>. • High power and current handling capability.
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25itiQ
O-220
O-263
to-263
to-220
FZ44/C
fz44
IDM144
cepfz44
CEBFZ44
OC310
C3108
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VP0116N5
Abstract: No abstract text available
Text: V P 0116 VP0120 in c . P-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package Jl BVDSS/ b V dgs Rds<on max) TO-39 TO-92 TO-220 DICEt -160V 2 5 fi -100mA VP0116N2 VP0116N3 VP0116N5 VP0116ND -200V 250 -100mA VP0120N2 VP0120N3
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VP0120
VP0116N2
VP0120N2
VP0116N3
VP0120N3
O-220
VP0116N5
VP0120N5
VP0116ND
VP0120ND
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SSD2004
Abstract: 250M
Text: N&P-CHANNEL POWER MOSFETS SSD2004 FEATURES • Extremely Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability
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SSD2004
SSD2004
00A/iiS
300//s,
250M
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Untitled
Abstract: No abstract text available
Text: Power 1. Absolute MOS F E T Specification Maximum Ratings Symbol Item Condition Ratings Unit - 5 5 - 1 5 0 ”C Storage Temperature ^stg Channel Temperature ^ch 1 5 0 •c Drain-Source Voltage V dss 6 0 0 V Gate-Sourse Voltage V gss ±3 0 V Drain Current DC
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Untitled
Abstract: No abstract text available
Text: SIEMENS BUZ 104L SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level • dv/df rated • Low on-resistance • 175 °C operating temperature • also in TO-220 SMD available Type BUZ104L Vos 50 V b 17.5 A flDS on
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O-220
BUZ104L
78-S1358-A2
0235bG5
0064bD4
G0fl4b05
0235bOS
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gunn diode radar module
Abstract: Gunn Diode e band
Text: MITEL AC2001 Millimeter Wave gunn Oscillator Module S E M IC O N D U C T O R DS5074 Issue 2.0 March 1999 Features • • • • High output power Low phase noise performance Frequency stability with temperature Frequency agility Applications • • •
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AC2001
DS5074
gunn diode radar module
Gunn Diode e band
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E2733
Abstract: E2715
Text: INTERNATIONAL RECTIFIER SbE D m MfiSS45E 0010b47 fi B Selection Guide E1007F INTERNATIONAL RECTIFIER \ ïA> ENCAPSULATED BRIDGE RECTIFIERS INTERNATIONAL RECTIFIER EN C AP SU LA TED B R ID G E EbE D • 4B 55 4S 2 a010b4fi T ■ R E C T IF IE R S _
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MfiSS45E
0010b47
E1007F
a010b4fi
1DMB40,
26MB120A
KPBC13SB.
S-162
IL60067.
E2733
E2715
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Untitled
Abstract: No abstract text available
Text: rz7 SGS-ni0MS0N ^ 7# M » [IL IO T M I]e S T B 6 NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE STB6NA80 V dss RDS on Id 800 V < 1.9 Q 5.7 A TYPICAL R d s (o ii) = 1-68 Q , ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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STB6NA80
O-262)
O-263)
07233S
O-263
DD72340
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OPB695
Abstract: OPB695A OPB695B OPB696 OPB697 OPB698 3SB diode
Text: g OPTEK Product Bulletin OPB695 July 1996 Photologic O ptical Flag S w itch Types OPB695, OPB696, OPB697, OPB698 Series Features • Photologic® output • Four output options • Mechanicaf switch replacement • 3-pin connector (Ho Tien L2561 -03),
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OPB695
OPB695,
OPB696,
OPB697,
OPB698
L2561
OPB695A
OPB695B
OPB696
OPB697
3SB diode
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Untitled
Abstract: No abstract text available
Text: 7^ 5 ^ 23 7 OOMbe^fl T7Û • S G T H _ *57 SGS-THOMSON STP5N90 STP5N90FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N 90 STP5N90FI ■ . ■ ■ . ■ . V dss RDS on Id 900 V 900 V < 2.4 Q < 2.4 a 5A 2.8 A TYPICAL Ros(on) = 1.9 a
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STP5N90
STP5N90FI
STP5N90/FI
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Untitled
Abstract: No abstract text available
Text: SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vbs b ^ D S o n Package Ordering Code BUZ 73 AL 200 V 5.5 A 0.6 Q TO-220 AB C67078-S1328-A3 Maximum Ratings Parameter Symbol Continuous drain current
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O-220
C67078-S1328-A3
SQT-89
D13377Ã
35bG5
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