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    3N17 Search Results

    3N17 Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    SIT5711AC-KX-33N-17.280000 SiTime 1 to 60 MHz, Stratum 3E OCXO Datasheet
    SIT8918BE-11-33N-17.000000 SiTime 1 to 110 MHz, High Temperature Oscillator (-40 to +125°C) Datasheet
    SF Impression Pixel

    3N17 Price and Stock

    Qorvo UF3N170400B7S

    JFET N-CH 1.7KV 6.8A D2PAK-7
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    Vishay Dale NTHS0603N17N1503JE

    THERM NTC 150KOHM 4064K 0603
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    STMicroelectronics STW3N170

    MOSFET N-CH 1700V 2.6A TO247-3
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    DigiKey STW3N170 Tube 685 1
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    Mouser Electronics STW3N170 543
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    Avnet Silica STW3N170 960 17 Weeks 30
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    Vishay Dale NTHS0603N17N2003JE

    THERMISTOR NTC 200K OHM 5% 0603
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    Amphenol PCD D38999/33-N-17-R

    DUST CAP, RECEPTACLE CAP,STAINLE
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    DigiKey D38999/33-N-17-R Bag 83 1
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    3N17 Datasheets (93)

    Part ECAD Model Manufacturer Description Curated Type PDF
    3N170 Calogic N-Channel Enhancement Mode MOSFET Switch Original PDF
    3N170 Linear Integrated Systems N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    3N170 Linear Technology N-channel Mosfet Enhancement Mode Original PDF
    3N170 Calogic N-ChannelEnhancelnent Mode MOSFET Switch Scan PDF
    3N170 General Instrument Short Form Data 1976 Short Form PDF
    3N170 Intersil N-channel enchancement mode MOSFET switch. Scan PDF
    3N170 Intersil Shortform Data Book 1983/4 Short Form PDF
    3N170 Intersil Data Book 1981 Scan PDF
    3N170 Motorola European Master Selection Guide 1986 Scan PDF
    3N170 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N170 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3N170 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N170 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N170 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N170-1 Linear Integrated Systems N-CHANNEL MOSFET ENHANCEMENT MODE Original PDF
    3N170-71 Calogic N-Channel Enhancement Mode MOSFET Switch Original PDF
    3N170/D Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N170/W Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N171 Calogic N-Channel Enhancement Mode MOSFET Switch Original PDF
    3N171 Linear Integrated Systems N-CHANNEL ENHANCEMENT MODE MOSFET Original PDF

    3N17 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N170

    Abstract: No abstract text available
    Text: 3N170 N-CHANNEL MOSFET The 3N170 is an enhancement mode N-Channel Mosfet The 3N170 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		PDF 3N170 3N170

    3N170

    Abstract: 3N170-71 3N171 X3N170-71
    Text: N-Channel Enhancement Mode MOSFET Switch LLC 3N170 / 3N171 FEATURES • Low Switching Voltages • Fast Switching Times Drain-Source Resistance • Low • Low Reverse Transfer Capacitance PIN CONFIGURATION HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input


    Original     		PDF 3N170 3N171 DS019 3N170-71 3N171 X3N170-71

    3N169

    Abstract: 2N7106 2n7109 2N7104 2N7105 2N7107 2N7108 3N170 3N171 SDF8200
    Text: Type Number 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 SDF8201 SDF8202 SDF8203 SDF9210 SDF9211 SDF9212 SDF9213 SDF9214 SDF9215 V Vgs Vgs Br Igss (h) (h) Case Geometry dss Max Max Max Style Min (pA) (V) (V) (V) TOFMN1.1 25 10 0.5 1.5


    Original     		PDF 3N169 3N170 3N171 2N7104 2N7105 2N7106 2N7107 2N7108 2N7109 SDF8200 3N169 2N7106 2n7109 2N7104 2N7105 2N7107 2N7108 3N170 3N171 SDF8200

    3N172

    Abstract: 3N172-73 3N173 X3N172-73
    Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch LLC 3N172 / 3N173 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage


    Original     		PDF 3N172 3N173 3N172. 3N173. 200ns DS020 3N172-73 3N173 X3N172-73

    intersil jfet

    Abstract: intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice
    Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)


    Original     		PDF 3N170 3N171 3N170 3N171 300mW intersil jfet intersil JFET TO 18 U308 DIODE A6 P-channel N-Channel power mosfet ENHANCEMENT 2n3955 transistor spice

    1322

    Abstract: No abstract text available
    Text: 3N170 25 V - N-Channel Enhancement Mode MOSFET Switch 13.22 Transistors MOSF. Page 1 of 1 Enter Your Part # Home Part Number: 3N170 Online Store 3N170 Diodes 25 V - N-Channel Enhancement Mode MOSFET Sw itch Transistors Integrated Circuits Optoelectronics


    Original     		PDF 3N170 3N170 com/3n170 1322

    3N165

    Abstract: 3N170 3N171
    Text: 3N170, 3N171 N-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE LOW SWITCHING VOLTAGES LOW DRAIN-SOURCE RESISTANCE LOW REVERSE TRANSFER CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 (TA= 25°C unless otherwise noted)


    Original     		PDF 3N170, 3N171 300ms. 3N165 3N170 3N171

    3N170-1

    Abstract: 3N170 3N170-71 3N171 X3N170-71
    Text: N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170 / 3N171 FEATURES • Low Switching Voltages • Fast Switching Times Drain-Source Resistance • Low • Low Reverse Transfer Capacitance PIN CONFIGURATION HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input


    Original     		PDF 3N170 3N171 3N170-1 3N170-71 3N171 X3N170-71

    3N172

    Abstract: 3N172-73 3N173 X3N172-73
    Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 3N172 / 3N173 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage


    Original     		PDF 3N172 3N173 3N172. 3N173. -10mA 200ns 3N172-73 3N173 X3N172-73

    amelco

    Abstract: UNION CARBIDE
    Text: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200 FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)


    Original     		PDF 3N170, 3N171 3N170 OT-143 300mW 25-year-old, amelco UNION CARBIDE

    3n170 intersil

    Abstract: amelco
    Text: 3N170, 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns ABSOLUTE MAXIMUM RATINGS 3N170, 171 1 3N170, 171 SOT-143 TOP VIEW @ 25 °C (unless otherwise stated)


    Original     		PDF 3N170, 3N171 3N170 OT-143 300mW 25-year-old, 3n170 intersil amelco

    td 1603

    Abstract: No abstract text available
    Text: 3N171 N-CHANNEL MOSFET The 3N171 is an enhancement mode N-Channel Mosfet The 3N171 is an enhancement mode N-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		PDF 3N171 3N171 td 1603

    3N171

    Abstract: 3N170 3N170-1
    Text: 3N170 3N171 N-CHANNEL MOSFET ENHANCEMENT MODE Linear Integrated Systems FEATURES Direct Replacement for INTERSIL 3N170 & 3N171 LOW DRAIN TO SOURCE RESISTANCE rds on ≤ 200Ω FAST SWITCHING td(on) ≤ 3.0ns TO-72 BOTTOM VIEW 1 ABSOLUTE MAXIMUM RATINGS @ 25 °C (unless otherwise stated)


    Original     		PDF 3N170 3N171 3N170 300mW 3N171 3N170-1

    3n169

    Abstract: No abstract text available
    Text: TYPES 3N169, 3N170. 3N171 N-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD EFFECT TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 8 3 . M A R C H 1 9 7 3 EN H A N C E M E N T-T Y P E t MOS SILIC O N TRAN SISTO RS For Applications Requiring Very High Input Impedance, Such as


    OCR Scan     		PDF 3N169, 3N170. 3N171 3n169

    Untitled

    Abstract: No abstract text available
    Text: 3N170. 3N171 LINEAR SYSTEMS N-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems Cr Ct A1 A T I1D C C . Unto. . VERY HIGH INPUT IMPEDANCE


    OCR Scan     		PDF 3N170. 3N171 300ms.

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement Mode MOSFET Switch caioqic CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device


    OCR Scan     		PDF 3N170/3N171 00CH42

    3N170/D

    Abstract: 3N170 3N171
    Text: 3N 170, 3N171 N -C h a n n e l E n h a n ce m e n t M ode M O S FIET FEATURES PIN CONFIGURATION • Low Sw itching V olta g e s— VQS ttll} s 3.0 V • Fast Sw itching Tim es — tr s 10 ns TO -72 • Low Drain-Source Resistance rd8,on » 2000 (Max) M A X I M U M R A T I N G S (T a = 2 5 °C unless otherw ise noted)


    OCR Scan     		PDF 3N170, 3N171 3N170/D 3N170 3N171

    2N4351 MOTOROLA

    Abstract: 3N169 3N171 2N4351 3N170
    Text: MOTOROLA SC XSTRS/R F 15E D | fc,3b?SS4 GGflbt.7fl J'-iS'-XS' 3 | 3N169 thru 3N171 CASE 20-03, STYLE 2 TO-72 TO-2Û6AF M A X IM U M R ATINGS Sym bol V a lu e U n it D rain-Source V olta g e Vd S 25 Vdc D rain-G ate V oltag e Vd g ± 35 Vdc Gate-Source V olta g e


    OCR Scan     		PDF 3N169 3N171 2N4351 t3b725Â 2N4351 MOTOROLA 3N170

    3N170

    Abstract: Hall 01E 3N171
    Text: G Dl E SOLI» STATE DE I 307SDÛ1 D D l l G n 3875081 G E SOLID STATE 01E 11019 D 3 N1 7 0 , 3 N171 3N170, 3N171 N-Channel Enhancement Mode MOSFET Switch FEATURES HANDLING PRECAUTIONS • Low • Fast • Low • Low MOS field-effect transistors have extremely high input re­


    OCR Scan     		PDF 3fi750fll 3N170, 3N171 3N170 3N170 Hall 01E 3N171

    Untitled

    Abstract: No abstract text available
    Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch calodic CO RPO RATIO N V 3N172/3N173 A B S O L U T E M A X IM U M R AT IN G S Ta = 25°C unless otherwise specified FEATURES • H igh Input Im pedance • D iod e P rotecte d G ate


    OCR Scan     		PDF 3N172/3N173 3N172 3N172 3N173 -10mA 10Mtt 200ns 000CH44

    3n174

    Abstract: ECRE
    Text: TYPE 3N174 P-CHANNEL ENHANCEMENT-TYPE INSULATED-GATE FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L -S 7 0 1 1 2 8 5 , J A N U A R Y 1970 E N H A N C E M E N T -T Y P E t MOS SILIC O N TR A N SISTO R For Applications Requiring Very High Input Impedance, Such as


    OCR Scan     		PDF 3N174 ECRE

    3N163

    Abstract: 3N164 3N165 3N166 3N169 3N172 3N173 3N188 3N189 3N190
    Text: » M © Ï F ©Ä¥Ä[L© LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Typ« Number Case Style (TO - 3N163 3N164 3N172 3N173 72 72 72 72 Igss Max (PA) Min Geometry V(Br)da* Min (V) FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 10 10 200 200 2.0 2.0


    OCR Scan     		PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u 3N165 3N166 3N169 3N188 3N189 3N190

    Untitled

    Abstract: No abstract text available
    Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch 3N172/3N173 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage 3N172 . 40V


    OCR Scan     		PDF 3N172/3N173 3N172 3N172 3N173 -10mA 200ns

    3N171

    Abstract: VN10MA C 828
    Text: _ _ C U lO O IC V N-Channel Enhancement Mode MOSFET Switch CORPORATION 3N170/3N171 FEATURES HANDLING PRECAUTIONS • • • • MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device


    OCR Scan     		PDF 3N170/3N171 3N171 VN10MA C 828