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    3N08 WW Search Results

    3N08 WW Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    SIT5001AC-GE-33N0-80.000000 SiTime 1 to 80 MHz, ±5 ppm (VC)TCXO Datasheet
    SIT5156AI-FK-33N0-8.765432 SiTime 1 to 60 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet
    SIT5357AC-FN-33N0-87.000000 SiTime 60 to 220 MHz, Stratum 3 Super-TCXO Datasheet
    SIT5001AC-8E-33N0-80.000000 SiTime 1 to 80 MHz, ±5 ppm (VC)TCXO Datasheet
    SiT5001AC-3E-33N0-80.000000 SiTime 1 to 80 MHz, ±5 ppm (VC)TCXO Datasheet
    SIT5157AC-FA-33N0-80.000000 SiTime 60 to 220 MHz, ±0.5 to ±2.5 ppm Super-TCXO Datasheet

    3N08 WW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3n08

    Abstract: 3N08 WW
    Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package http://onsemi.com Features • Ultra Low On−Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses


    Original     		PDF NTMD3N08LR2 NTMD3N08LR2 0E-05 0E-04 0E-03 0E-02 0E-01 3n08 3N08 WW

    3n08

    Abstract: No abstract text available
    Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package http://onsemi.com Features • Ultra Low On−Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses


    Original     		PDF NTMD3N08LR2 NTMD3N08LR2/D 3n08

    3n08

    Abstract: Catalytic Converter AN569 NTMD3N08LR2 NTMD3N08LR2G
    Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package http://onsemi.com Features • Ultra Low On−Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses


    Original     		PDF NTMD3N08LR2 NTMD3N08LR2/D 3n08 Catalytic Converter AN569 NTMD3N08LR2 NTMD3N08LR2G

    3N08

    Abstract: NTMD3N08LR2G AN569 NTMD3N08LR2 NTMD3N08LR2-D 3N08 WW
    Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N-Channel Enhancement-Mode SO-8 Dual Package http://onsemi.com Features •ăUltra Low On-Resistance Provides Higher Efficiency = 0.215 W, VGS = 10 V ♦ăRDS on = 0.245 W, VGS = 5.0 V •ăLow Reverse Recovery Losses


    Original     		PDF NTMD3N08LR2 NTMD3N08LR2/D 3N08 NTMD3N08LR2G AN569 NTMD3N08LR2 NTMD3N08LR2-D 3N08 WW

    3n08

    Abstract: NTMD3N08LR2G AN569 NTMD3N08LR2
    Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package http://onsemi.com Features • Ultra Low On−Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses


    Original     		PDF NTMD3N08LR2 NTMD3N08LR2/D 3n08 NTMD3N08LR2G AN569 NTMD3N08LR2

    3n08

    Abstract: AN569 NTMD3N08LR2 3N08 WW
    Text: NTMD3N08LR2 Power MOSFET 2.3 Amps, 80 Volts N−Channel Enhancement−Mode SO−8 Dual Package http://onsemi.com Features • Ultra Low On−Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V Low Reverse Recovery Losses


    Original     		PDF NTMD3N08LR2 NTMD3N08LR2/D 3n08 AN569 NTMD3N08LR2 3N08 WW

    3n08

    Abstract: NTMD3N08LR2 AN569 SMD310
    Text: NTMD3N08LR2 Advance Information Power MOSFET 2.3 Amps, 80 Volts N–Channel Enhancement–Mode SO–8 Dual Package http://onsemi.com Features • Ultra Low On–Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V


    Original     		PDF NTMD3N08LR2 r14525 NTMD3N08LR2/D 3n08 NTMD3N08LR2 AN569 SMD310

    3N08

    Abstract: AN569 NTMD3N08LR2 SMD310
    Text: NTMD3N08LR2 Advance Information Power MOSFET 2.3 Amps, 80 Volts N–Channel Enhancement–Mode SO–8 Dual Package http://onsemi.com Features • Ultra Low On–Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V


    Original     		PDF NTMD3N08LR2 r14525 NTMD3N08LR2/D 3N08 AN569 NTMD3N08LR2 SMD310

    3n08

    Abstract: No abstract text available
    Text: NTMD3N08LR2 Advance Information Power MOSFET 2.3 Amps, 80 Volts N–Channel Enhancement–Mode SO–8 Dual Package http://onsemi.com Features • Ultra Low On–Resistance Provides Higher Efficiency RDS on = 0.215 W, VGS = 10 V ♦ RDS(on) = 0.245 W, VGS = 5.0 V


    Original     		PDF NTMD3N08LR2 r14525 NTMD3N08LR2/D 3n08