OD11DIM
Abstract: 3N161
Text: G E SOLI» STATE □1 DE J 3fi75Dfll DDllDm 3875081 G E SOLID STATE 7 g 01E 11014 D 7^ J 7-2*- 3N161 Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch ABSOLUTE MAXIMUM RATINGS FEATURES T a = 25'C unless otherwise noted * Channel Cut Off With Zero Gate Voltage
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OD11DIM
3N161
10jiA
VDS--15V
3N161
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Untitled
Abstract: No abstract text available
Text: 17E D Radiation-Hardened High-Reliability ICs 3075051 00253 4 b 3 E SOLID STATE GP511/1RZ High-Reliability, Radiation-Hardened, CMOS/SOS High-Speed 8-Bit Bidirectional CMOS/TTL Interface Level Converter FUNCTIONAL DIAGRAM Radiation Features: • Radiation hardened to
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GP511/1RZ
RCA-GP511/1RZ
92CM-40969
GP511
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dual 1038 Transistor
Abstract: 2N5118 2N5117 2N5119
Text: E SOLI» STATE di DE | 3Û7SQÛ1 O O I O W T - z 7 - ï. 7 Dielectrically Isolated Dual PNP General Purpose Amplifier FEA TU R ES A B S O LU T E MAXIMUM RATINGS • High Gain at Low Current 0 a = 25°C unless otherwise noted Collector-Base or Collector-Emitter
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2N5117-2N5119
dual 1038 Transistor
2N5118
2N5117
2N5119
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Untitled
Abstract: No abstract text available
Text: G E SOLID STATE 17E D • 3575061 0024203 T ■ _ TechnicalData CD54/74AC14 CD54/74ACT14 Advance Information T A Z 'Z X Hex Inverting Schmitt Trigger Type Features: ■ Operates with much slower than standard input rise and fall slew rates
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CD54/74AC14
CD54/74ACT14
CD74AC14
CD74ACT14
14-lead
CD54/74AC
CD54/74ACT
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