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    3FC TRANSISTOR Search Results

    3FC TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3FC TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MRF221

    Abstract: mrf433 2N6081 2C6081
    Text: M O T O R O L A SC -CDIODES/OPTO} i 6367255 MOTOROLA SC 34 DE~|fc.3fc.7a5S 34c DIO DES/OPTO 003Ö071 38071 SILICON RF TRANSISTOR DICE (continued) 2C6081 DIE NO. — NPN LINE SOURCE — RF605.419 This die provides performance equal to or better than that of


    OCR Scan     		PDF RF605 2N6081 MRF209 MRF221 MRF433 2C6081 mrf433 2C6081

    2N6429

    Abstract: J 2N2484 mpsa18 2N642B MPS-A09 2N2484 motorola 2N2483 SILICON SMALL-SIGNAL DICE MPS-6571 MPSA09
    Text: MOTOROLA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC ^ * . * 3' . 34 DE J t>3fc.725S 0037T7t. □ 34C DIODES/OPTO 37976 1 SILICON SMALL-SIGNAL TRANSISTOR DICE (continued) 2C2484 DIE NO. — NPN LINE SOURCE — DMB102 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF 0037T7t. DMB102 2N2483 2N2484 2N5089 2N5209 2N5210 2N642B 2N6429 MMCM2484 J 2N2484 mpsa18 MPS-A09 2N2484 motorola SILICON SMALL-SIGNAL DICE MPS-6571 MPSA09

    BFR99

    Abstract: 2C4957 2n4957 die SILICON DICE motorola transistor dice
    Text: MOTORO LA SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 34 DlTJfc.3fc.72S5 003Ô0S4 CD I O D E S / O P T O 34C 38054 D T -3 Ì-J3 SILICON RF TRANSISTOR DICE continued) 2C4957 DIE NO. — PNP LINE SOURCE — RF502.57 c« This die provides performance equal to or better than that of


    OCR Scan     		PDF RF502 2C4957 2N4957 2N4958 2N4959 2NS829 BFR99 BFR99 2C4957 2n4957 die SILICON DICE motorola transistor dice

    2N3797

    Abstract: 2N3797 MOTOROLA 2N3796 2N3796 MOTOROLA 2N3798
    Text: MOTOROLA SC XSTRS/R F 12E D | b 3fc,7a5M ODfibtilO 5 | f 2N3796 2N3797 CASE 22-03, STYLE 2 TO-18 TO-206AA MAXIMUM RATINGS Value Symbol Rating Drain-Source Voltage 2N3796 2N3797 Gate-Source Voltage Unit Vdc V os 25 20 VGS ±10 Vdc 1 Source Drain Current >D


    OCR Scan     		PDF 2N3796 2N3797 2N3796 O-206AA) 2N3798 2N3797 MOTOROLA 2N3796 MOTOROLA 2N3798

    2n2846

    Abstract: 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola 2C2222A MPS8092 2N4401 die 2n3116
    Text: 34 M O T O R O L A SC -CDIODES/OPTO} 1 D • t,3fc,7S55 0 0 3 7 ^ 7 4 34C 37974 7"-3r- /S SILICON SMALL-SIGNAL TRANSISTOR DICE continued 2C2222A — DIE NO. NPN LINE SOURCE — DMB101 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF DMB101 2C2222A 2N696* 2N697 2N731 2N956 2N1420* 2N1613 2N1711 2N1959* 2n2846 2N3015 2n2224 MOTOROLA 2n2218 TRANSISTOR 2n2848 2N2222A motorola MPS8092 2N4401 die 2n3116

    Untitled

    Abstract: No abstract text available
    Text: 12E I fc,3fc.7BS4 M OTOROL A MOTOROLA 0007307 SC b | XSTRS/R F SEM IC O N D U C T O R TECHNICAL DATA MRA0204-60 The RF Line U H F P o w e r T ra n sisto r 8 dB 225-400 MHz 60 WATTS BROADBAND UHF POWER TRANSISTOR . designed primarily for wideband, large-signal output and driver amplifier stages in


    OCR Scan     		PDF MRA0204-60

    3fc relay

    Abstract: diode 1.5 ke 36 ca
    Text: MOTOROLA SC XSTRS/R I F 1 4 E D H fc,3fc,72S4 0 0 0 ^ = 1 7 MOTOROLA □ I •l SEMICONDUCTOR TECHNICAL DATA IRF710 N-CHANNEL ENHANCEM ENT-M O DE SILICON GATE T M O S POWER FIELD EFFECT TRANSISTOR Part Number Vd s s IRF71Q 400 V rosion 3.6 n Th is T M O S Power F E T is designed for high voltage, high speed


    OCR Scan     		PDF IRF710 IRF71Q 3fc relay diode 1.5 ke 36 ca

    MMBT3904

    Abstract: 2N3903 MOTOROLA SOT-23 MMBT3903 MMBT-3904
    Text: MOTOROLA 6367254 SC -CXSTRS/R MOTOROLA SC Tb F> CXSTRS/R Dlf|t.3fc.72Si4 0 0 0 2 0 3 ^ 4 96D 8 2 0 3 9 F D -/S ' M AXIM UM RATINGS Symbol Value Unit Collector-Emitter Voltage Rating VCEO 40 Vdc Collector*Base Voltage VCBO 60 Vdc Emitter-Base Voltage Vebo


    OCR Scan     		PDF 72Si4 MMBT3903 MMBT3904 OT-23 O-236AA/AB) MMBT3904 2N3903 MOTOROLA SOT-23 MMBT-3904

    2H SOT23

    Abstract: No abstract text available
    Text: MO TORO LA SC 1EË D | L>3fc.?ES4 QGßS^Tö S | X S TR S/ R F M A X IM U M RATINGS - f p - t f ' •' MMBTA55L Symbol Rating MMBTA56L U nit Collector-Emitter Voltage VCEO 60 80 Vdc Collector-Base Voltage VCBO 60 80 Vdc Emitter-Base Voltage


    OCR Scan     		PDF MMBTA55L MMBTA56L MMBTA56L OT-23 O-236AB) 2H SOT23

    2N3425 MOTOROLA

    Abstract: 2N3425 MD2369
    Text: MOTOROLA SC XSTRS/R F R ating E D | fe,3fc,7aSM 0Qflt,3B3 T | 1 2 Sym bol V a lu e Collector-Em itter Volta g e VcE O 15 Vdc Collector-Em itter Volta g e V C ER 20 Vdc Collector-B ase Volta g e VCBO 40 Vdc Em itter-Base V olta g e VEBO 5.0 Total Device D issip a tion @ T/\ - 25°C


    OCR Scan     		PDF 2N3425 MD2369 2N3425 MOTOROLA 2N3425

    microt

    Abstract: MMT2907 755s
    Text: 6 3 6 7 2 5 5 MOTOROLA SC DE I t,3fc,7255 D D 3 Ô 5 1 ? 34 M O T O R O L A SC { D I O D E S / O P T O l D IO DE S/ OP TO 34C 38217 MICRO-T (continued) 7 ? MMT2907 - D 3 H i pnp GENERAL PURPOSE TRANSISTOR • designed for general-purpose switching and amplifier


    OCR Scan     		PDF 3b72SS MMT2907-pnp MMT2907 PVN200 ns12pF microt MMT2907 755s

    BC160 MOTOROLA

    Abstract: No abstract text available
    Text: MO TG R C L A SC XSTRS/R F 15E D I fc>3fc.72S4 Gaat.Mt.2 2 I BC160, -6, -10, -16 BC161, -6, -10, -16 M A X IM U M RATINGS Sym bol BC 160 BC 161 U nit Collector-Emitter Voltage VC EO 40 60 Vdc C ollector-Base Voltage VCBO 40 60 Vdc Em itter-Base Voltage VEBO


    OCR Scan     		PDF BC160, BC161, AdeC160, BC161 BC160 MOTOROLA

    BFX38 MOTOROLA

    Abstract: bfx38 BFX40
    Text: M O T O RO LA SC XSTRS/R F 12E D | t,3fc.?254 QOÛbMôO M | M A X I M U M R A T IN G S S ym bol BFX38 BFX40 U n it C o lle ctor-E m itter Voltage VCEO 55 75 Vdc Collector-Base Voltage VcBO 55 75 Vdc Em itter-Base Voltage Vebo 5.0 Vdc C o lle ctor C urrent — Continuous


    OCR Scan     		PDF BFX38 BFX40 BFX38 MOTOROLA

    P10T7

    Abstract: No abstract text available
    Text: b4E D MOTOROLA • fc.3fc.7E55 OOflbHgS 350 » H O T ? SEMICONDUCTOR TECHNICAL DATA MO TO RO LA SC D I O D E S / O P T O _ SCANSWITCH MR10120E P o w e r Rectifier For H igh and V ery H igh R e so lu tio n M o n ito rs M otorola Proforrad D«vica This state-of-the-art Power Rectifier is specifically designed for use as a Damper Diode


    OCR Scan     		PDF MR10120E MW16206 MJF16206 MR10otorola MR10120E D0flbM30 P10T7 P10T7

    MRF545

    Abstract: MRFC545 RF545
    Text: MOTOROLA SC XSTRS/R F 4bE D • fc.3fc.72SH □ □ ' Ì H 7 4 7 MOTOROLA 3 ■ 110Tb T 3 B - n SEMICONDUCTOR TECHNICAL DATA MRF545 MRFC545 The RF Line PIMP Silicon High Frequency Transistors >C = -4 0 0 mA d e s ig n e d fo r h ig h - fr e q u e n c y a n d m e d iu m a n d h ig h re s o lu tio n c o lo r v id e o d is p la y


    OCR Scan     		PDF 110Tb MRF545 MRFC545 IS22I MRFC545 RF545

    mjM6052

    Abstract: No abstract text available
    Text: M O T OR O L A SC XSTRS/R F 4bE » fe.3fc.72S4 O C H ^ T O MOTOROLA 4 • f 1 0 T b / z3 ? - 3 3 SEM ICONDUCTOR TECHNICAL DATA M JM 6052 Discrete Military Products (PNP) DM0 M JM 6059 (NPN) m an P N P /N P N S ilic o n C o m p le m e n ta ry P o w e r D a rlin g to n T ra n sisto rs


    OCR Scan     		PDF MIL-S-19500/ O-116) mjM6052

    2SK993

    Abstract: KJE 17 transistor sje 360 jb 5531 KJE transistor transistor sje 360 KJE transistor KJE F108 diode JE 33 F108
    Text: MOS M O S Field Effect Pow er Transistor N ^ * ; i ^ \ 0r7 - MOS FET x i f f l 2 S K 9 9 3 là , N :* J ' f f i J f r ô M S y i / Z ' f # 7 K , M O S F E T T", 5 V H * I C < , y y ’c o f t m i z M M T t o i t V gs = 10 V, R DS o„ ^ 0 . 2 5 Q f ^D S (o n )


    OCR Scan     		PDF 2SK993 MXISI06! 29Sll^ 2SK993 KJE 17 transistor sje 360 jb 5531 KJE transistor transistor sje 360 KJE transistor KJE F108 diode JE 33 F108

    2SK1198

    Abstract: TCA 700 v T04CO
    Text: MOS Field Effect P ow er Transistor 2SK1198 N ^ ^ ^ N 0r7 — M O S FET m j i m 2SK1198 li, N MOS F E T ffits :* * <, ? * > m x ^ y f v r t m & i s t i x h ' > , ^ E l ¥ fi : mm) 1 0 .5 M A X . s s jg & x 4 4 .7 M A X . AC 7 r-7 °? Î : t* Iz M m X to


    OCR Scan     		PDF 2SK1198 2SK1198 TCA 700 v T04CO

    NEC .PA1400H

    Abstract: PA1400H PA1428H TYA 0298 13X26X4 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400
    Text: NEC j tM'g- y<r7— C o m p o u n d P o w e r T ra n s is to r ¿¿PA 1428H mm i NPN Silicon Epitaxial Transistor Low Speed Switching Darlington Industrial Use 7"') > •9 • 9 J 7*y J 9 ■7 r 9 V TR • i ') ■ ECR^ ^ ^ 0 ¿ 'c 7 ) g x a ^ if ^ J-fff;:, y V J y[ K • i — 9 • 'J w — • 7


    OCR Scan     		PDF PA1428H 13X26X4 NEC .PA1400H PA1400H PA1428H TYA 0298 NEC PA1400H uPA1428H 0CJA pa-1400 PA1400

    2sk991

    Abstract: 2SK9 ASGA 2sk99
    Text: MOS M O S Field Effect P ow er Transistor N - ^ * ; i " N or7— M O S FET I i f f l mm 2SK991 ii, Nf-^*;w^i?'"o,7- M 0 S FET T*. 5 V * « * I C <nf t * tw J : & i £ K ï f t * * » T f é ì ' M x ^ y f > ^ x T O : mm t t . 4.8 MAX. -1.3±0.2 y t '/ ' f


    OCR Scan     		PDF 2SK991 2SK991 2SK9 ASGA 2sk99

    MPT100

    Abstract: No abstract text available
    Text: NEC j m * T / v rx Junction Field Effect Transistor A 2SK692 e c -r v k ° — m N-Channel Silicon Junction Field Effect Transistor ECM Impedance Converter n $ m m o g mi * o r - h i w s * mm V '. 4.0 ± 0.2 • v - x m z f j x - Y z «H&T-è E C M -f > &


    OCR Scan     		PDF

    2SK1108

    Abstract: eska TDA7577
    Text: NEC l Ÿ T 5 s— 5> • 2 /— h C B 5Ê Junction Field Effect Transistor / \ t Z 2 E C M S K 1 1 8 4 > \£ — i t f t 2 .0 ± 0 . 2 o r - F 46, • y - x x . v ï Y M l : N i ' - v Y , t - K, Î f K œ i Æ £ l * S * L t : < , ' £ f c -I 9 'i t t c f t ü f i ' o


    OCR Scan     		PDF 2SK1108 10---O 2SK1108 eska TDA7577

    RM4T

    Abstract: r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22
    Text: M O S Field Effect P ow er Transistor N ^ ^ ^ < 7 -M O S x 2S K 800ÌÌ, <, N - f - -y T x 4 ' > ' N> X/ > h m m s-ty — M OS > , Ü 5 J i & - v i - > X FET F E T T '^ ~ > 'f v ^ - fì : mm) f -> 7 ' * , D C -D C n > /< — # Î t ° V dss~ 450 V, o f i ^ > f f i Î Æ


    OCR Scan     		PDF 2SK800 2SK800Ã RM4T r460 FET 2SK800 lg lx 221 TC6142 b0992 tt 22

    2SK871

    Abstract: 2SK87
    Text: M O S B W f f - $ ] ^ s < r7 M O S Field Effect Pow er Transistor • /\°7 - M O S fe t if f f l 2SK871 i±, V t • ^ > ' ^ X / > hM^or7- MOS FET > f S Ì/ ljH S < , x -1“ V - f > 9 , 4 f t m m ¥ f ì : mm >'/ 0 3.2 + 0.2 f- > ^ S ïl, DC-DC a >s<- ? fcflüi tM".


    OCR Scan     		PDF 2SK871 O00000 2SK871 2SK87