3DK2222A Search Results

3DK2222A Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
3DK2222A		Jiangsu Changjiang Electronics Technology	TRANSISTOR(NPN )		Original	PDF
3DK2222A-SOT-23		Jiangsu Changjiang Electronics Technology	TRANSISTOR ( NPN )		Original	PDF
3DK2222A-TO-92		Jiangsu Changjiang Electronics Technology	TRANSISTOR(NPN )		Original	PDF

3DK2222A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1	Original	PDF	OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1	Original	PDF	OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz
3DK2222A Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 3DK2222A Plastic-Encapsulate Transistors TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z Epitaxial planar die construction 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	PDF	3DK2222A voltag150mA 500mA 500mA, 150mA, 150mA 100MHz 3DK2222A
3DK2222A Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 3DK2222A Plastic-Encapsulate Transistors TO-92 TRANSISTOR NPN 1. EMITTER FEATURE Power dissipation PCM : 2. BASE 0.625 W(Tamb=25℃) 3. COLLECTOR 1 2 3 MAXIMUM RATINGS* TA=25℃ unless otherwise noted	Original	PDF	3DK2222A 150mA 500mA 150mA, 100MHz 3DK2222A
1p1 transistor Abstract: No abstract text available Text: 3DK2222A SOT-23 Transistor NPN SOT-23 1. BASE 2.EMITTER 3.COLLECTOR Features Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) MARKING: 1P1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	PDF	3DK2222A OT-23 OT-23 MMBT2907A) -55to 150mA 500mA 100MHz 150mA 1p1 transistor
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A SOT-23 TRANSISTOR NPN FEATURES y y 1. BASE Epitaxial planar die construction Complementary PNP Type available(MMBT2907A) 2.EMITTER 3.COLLECTOR MARKING: 1P1	Original	PDF	OT-23 3DK2222A OT-23 MMBT2907A) -55to 150mA 500mA 100MHz
Untitled Abstract: No abstract text available Text: 3DK2222A NPN TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. BASE Features 2.92 MIN MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Parameter Value Units VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage	Original	PDF	3DK2222A 25MAX bre10 150mA 500mA 500mA, 150mA,
1p1 transistor Abstract: 3DK2222A MMBT2907ALT1 Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors 3DK2222A TRANSISTOR NPN SOT-23 FEATURES y y Epitaxial planar die construction Complementary PNP Type available(MMBT2907ALT1) 1. BASE 2.EMITTER 3.COLLECTOR MARKING: 1P1	Original	PDF	OT-23 3DK2222A OT-23 MMBT2907ALT1) -55to 150mA 500mA 100MHz 1p1 transistor 3DK2222A MMBT2907ALT1
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 3DK2222A Plastic-Encapsulate Transistors TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z Epitaxial planar die construction 2. BASE 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol	Original	PDF	3DK2222A 150mA 500mA 500mA, 150mA, 100MHz