Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    3DD13001 TRANSISTOR Search Results

    3DD13001 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    3DD13001 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3DD13001

    Abstract: No abstract text available
    Text: 3DD13001 0.2A , 600V NPN Plastic-Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 Power switching applications A D B CLASSIFICATION OF hFE 1 Product-Rank 3DD13001-A


    Original     		PDF 3DD13001 3DD13001-A 3DD13001-B 19-Aug-2011 3DD13001

    3dd13001 TRANSISTOR

    Abstract: 3DD13001
    Text: 3DD13001 3DD13001 TRANSISTOR NPN FEATURES Power dissipation PCM: TO-251 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range 2. COLLECTOR 3EMITTER TJ, Tstg: -55℃ to +150℃


    Original     		PDF 3DD13001 O-251 3dd13001 TRANSISTOR 3DD13001

    transistor 131-6

    Abstract: 131-6 transistor 3dd13001 TRANSISTOR 3DD13001 npn 600v to92
    Text: 3DD13001 3DD13001 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: 0.2 A Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range 3. EMITTER 1 2 3 TJ, Tstg: -55℃ to +150℃


    Original     		PDF 3DD13001 transistor 131-6 131-6 transistor 3dd13001 TRANSISTOR 3DD13001 npn 600v to92

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251-3L FEATURES power switching applications 1. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


    Original     		PDF O-251-3L 3DD13001 O-251-3L

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR NPN 1. BASE 2. COLLECTOR FEATURES z Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF 3DD13001

    ic MA 2831

    Abstract: 3DD13001 transistor 131-6
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES power switching applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF 3DD13001 ic MA 2831 3DD13001 transistor 131-6

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13001 TRANSISTOR NPN 1. BASE 2. COLLECTOR FEATURES z Power switching applications 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter


    Original     		PDF 3DD13001

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES z Power switching applications 1. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 3. EMITTER Symbol Parameter


    Original     		PDF 3DD13001

    ic MA 2831

    Abstract: 3DD13001 3dd13001 TRANSISTOR
    Text: CHINA GUANGDONG DONGGUAN HAROM ELECTRONICS CO., LTD TO-92 Plastic-Encapsulate Transistors www.harom.cn 3DD13001 TRANSISTOR NPN TO-92 FEATURES power switching applications 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol


    Original     		PDF 3DD13001 ic MA 2831 3DD13001 3dd13001 TRANSISTOR

    131-6 to92

    Abstract: 3DD13001 npn 600v to92 ic MA 2831
    Text: 3DD13001 NPN TO-92 Bipolar Transistors TO-92 1. BASE 4.45 5.21 2. COLLECTOR 1.25MAX 3. EMITTER 2.92 MIN power switching applications MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO Parameter Value Units 600 V Collector -Base Voltage VCEO Collector-Emitter Voltage


    Original     		PDF 3DD13001 25MAX 131-6 to92 npn 600v to92 ic MA 2831

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 0.2 A ICM: Collector-base voltage 600 V V(BR)CBO: Operating and storage junction temperature range


    Original     		PDF 3DD13001

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR（ NPN ） TO—126 FEATURES 1. EMITTER Power dissipation PCM : 1 W（Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V BR CBO : 600


    Original     		PDF O-126 3DD13001 EB5-30 290TYP 090TYP

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-92 FEATURES Power dissipation 1. BASE PCM: 0.75 W (Tamb=25℃) 2. COLLECTOR Collector current 0.2 A ICM: Collector-base voltage 600 V V(BR)CBO:


    Original     		PDF 3DD13001

    3DD13001

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range


    Original     		PDF O-251 3DD13001 O-251 3DD13001

    300TYP

    Abstract: 3DD13001 IC 7900
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate Transistors 3DD13001 TRANSISTOR（ NPN ） TO—251 FEATURES Power dissipation PCM : 1.2 W（Tamb=25℃） Collector current ICM : 0.2 A Collector-base voltage V BR CBO : 600 V Operating and storage junction temperature range


    Original     		PDF O-251 3DD13001 O--251 091TYP 300TYP 300TYP 3DD13001 IC 7900

    3DD13001

    Abstract: No abstract text available
    Text: Transys Electronics L I M I T E D TO-251 Plastic-Encapsulated Transistors 3DD13001 TRANSISTOR NPN TO-251 FEATURES Power dissipation PCM: 1.2 W (Tamb=25℃) 1. BASE Collector current ICM: 0.2 A Collector-base voltage V(BR)CBO: 600 V Operating and storage junction temperature range


    Original     		PDF O-251 3DD13001 O-251 3DD13001

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    secos gmbh

    Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers


    Original     		PDF SGSR809-A SC-59 SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649

    secos gmbh

    Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
    Text: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3


    Original     		PDF SC-59 SGSR809-A SGSR809-B SGSR809-C SGSR809-D SGSR809-E secos gmbh SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA