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    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors  BC857S Multi-Chip TRANSISTOR PNP SOT-363 APPLICATION This device is designed for general purpose amplifier applications MARKING : 3C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF OT-363 BC857S OT-363 -10mA -100mA -10mA 100MHz 200Hz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation C1 B2 PCM : 300 mW(Tamb=25℃) E2 Collector current ICM : -200 mA Collector-base voltage V V(BR)CBO : -50


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    PDF OT-363 BC857S OT-363 -10mA -100mA -10mA 100MHz

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC857S Multi-Chip TRANSISTOR PNP SOT-363 FEATURES Power dissipation C1 PCM : 300mW(Ta=25℃) B2 E2 Collector current ICM : -200mA Collector-base voltage V(BR)CBO : -50V


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    PDF OT-363 BC857S OT-363 300mW -200mA -10mA -100mA -10mA

    BC857S

    Abstract: No abstract text available
    Text: BC857S PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 .055 1.40 .047(1.20) o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Features .053(1.35) .045(1.15) .096(2.45) .085(2.15) Power dissipation PCM : 0.3 W (Tamp.= 25 C)


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    PDF BC857S OT-363 026TYP 65TYP) 021REF 01-Jan-2006 BC857S

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic.


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    PDF BC857S 300mW OT-363 OT-363, 65Nominal

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic.


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    PDF BC857S 300mW OT-363 OT-363, 65Nominal

    3c sot363

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components BC857S PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic. UL Flammability


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    PDF BC857S 300mW OT-363 3c sot363

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components BC857S PNP Plastic-Encapsulate Features x x Multi-chip Transistor Ultra-Small Surface Mount Package x Case Material: Molded Plastic. UL Flammability


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    PDF BC857S 300mW OT-363 OT-363 65Nominal

    sot-363 MARKING

    Abstract: sot-363 marking 3C
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components PNP Plastic-Encapsulate Features x x • • • BC857S Multi-chip Transistor Ultra-Small Surface Mount Package


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    PDF BC857S 300mW OT-363 OT-363 sot-363 MARKING sot-363 marking 3C

    Untitled

    Abstract: No abstract text available
    Text: MCC   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components Features • x x • • • BC857S PNP Plastic-Encapsulate Halogen free available upon request by adding suffix "-HF"


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    PDF BC857S 300mW OT-363

    zener 751

    Abstract: SMF12A-GS08 GSOT08C-GS08 SOD-923 zener GSOT36C-GS08 SMF33A-GS08 DO215AA 751-1397-1-ND 751-1415-1-ND SMF6V5A-GS08
    Text: Transient Voltage Suppressors Cont. ESD TVS Fig. 1 SC-74 Dimensions in mm 1.55 6 5 4 1.70 1 2 3 6C A2 5A C3 4C 3 1 2 2.40 2.70 1 3 2 1 B. A. 2 1.35 2.20 Fig. 5 SOT-23 1.70 1 3 2 1.70 Breakdown Voltage VBR Min. Nom. Max. 5.32 6.0 6.4 6.2 13.3 13.3 5.32


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    PDF SC-74 OT-23 SC-89 OD-323 OT-323 SMAJ100A-E3/1GI-ND A-E3/61GICT-ND A-E3/61GITR-ND SMAJ10A-E3/61GICT-ND SMAJ10A-E3/61GITR-ND zener 751 SMF12A-GS08 GSOT08C-GS08 SOD-923 zener GSOT36C-GS08 SMF33A-GS08 DO215AA 751-1397-1-ND 751-1415-1-ND SMF6V5A-GS08

    c639

    Abstract: c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05


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    PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 c33840 transistor C639 c33725 c877 C63716 marking code 67a sot23 6 c878 c33740 F423

    transistor C639

    Abstract: c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor
    Text: Marking Code Sorted by Type Type Package Marking Type Package Marking BA 592 BA 595 BA 597 BA 885 BA 892 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-02W BAR 63-03W BAR 63-04 BAR 63-04W BAR 63-05 BAR 63-05W BAR 63-06 BAR 63-06W


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    PDF 3-02W 3-03W 3-04W 3-05W 3-06W 4-02W 4-03W 4-04W 4-05W 4-06W transistor C639 c639 transistor f423 F423 transistor f422 transistor f422 equivalent cx59 C640-10 f422 c640 transistor

    MARKING 68W SOT-23

    Abstract: marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23
    Text: Marking Sorted by Code Marking Type Package Marking Type Package 13 13s 14 14s 15 15s 16 16s 17 17s 1A 1A 1A 1As 1B 1B 1Bs 1Bs 1C 1D 1D 1Ds 1E 1Es 1F 1F 1Fs 1G 1G 1G 1Gs 1J 1J 1Js 1K 1K 1K 1K BAS 125 BAS 125W BAS 125-04 BAS 125-04W BAS 125-05 BAS 125-05W BAS 125-06


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    PDF 25-04W 25-05W 25-06W 25-07W 3904S 846AT 846BW 846BT 847AT 847BW MARKING 68W SOT-23 marking code 67a sot23 6 sot143 Marking code 5B baw 92 SOT-363 marking CF 54 fk SOT-23 BAT 545 SOT-363 marking BF sot-89 MARKING CODE BN MARKING CODE DH SOT 23

    sot-363 marking 3C

    Abstract: lf 10193
    Text: Sii 900_ Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS(V) Id (A ) r DS(on) (f i ) 0.480 e V q s = 10 V 0.63 0.700 V q s = 4.5 V 0.52 30 SOT-363 SC-70 (6-LEADS) Marking Code Lot Traceability and Oate Code I—- Part # Code


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    PDF OT-363 SC-70 S-02367-- 23-Oct-OO sot-363 marking 3C lf 10193

    sot-363 marking 3C

    Abstract: maxim MARKING CODE 21 71179
    Text: S ii 400_ Weiv Product Vishay Siliconix N-Channel 20-V D-S M OSFET PRODUCT SUMMARY r DS(on) (£2) b(A) 0.150 e V GS = 4.5 V 1.7 0.235 e V GS = 2.5 V 1.3 VDS(V) 20 SOT-363 SC-70 (6-LEADS) Marking Code XX £ Lot Traceability and Date Code — Part# Code


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    PDF OT-363 SC-70 150cC S-00826-- 24-Apr-00 sot-363 marking 3C maxim MARKING CODE 21 71179

    Si1912EDH

    Abstract: No abstract text available
    Text: SM912EDH New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 20 •d ( A ) r D S {on) ( & ) 0.280 @ V Gs = 4.5 V 1.28 0.360 9 VGS = 2.5 V 1.13 0.450 @ VGS = 1.8 V 1.0 SOT-363 SC-70 (6-LEADS) r • TrenchFET Power MOSFETS: 1.8-V Rated


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    PDF SM912EDH SC-70 OT-363 SC-70 Conduction25° S-03176-- 05-Mar-01 1912EDH 05-Mar-01 Si1912EDH

    SII907

    Abstract: 223S
    Text: _ S ii 907 Vishay Siliconix New Product Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY V d s r D S (o n) ( ß ) Id (A) 0.650 @ VGS = -4 .5 V ± 0 .5 6 (V ) -1 2 0.925 @ VGS = -2 .5 V ± 0 .4 7 1.310 @ V qq = -1 .8


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    PDF OT-363 SC-70 150cC S-99184--Rev. 01-Nov-99 S-99184-- SII907 223S

    sot363 marking qs

    Abstract: No abstract text available
    Text: TN0205A/AD Vishay Siliconix New Product N-Channel 20-V MOSFET PRODUCT SUMMARY V d s V 20 r DS(on) ( f i ) lD(mA) 2.0 0 VGS = 4.5 V 250 2.5 0 V GS = 2.5 V 150 FEATURES BENEFITS APPLICATIONS • • • • • Ease in Driving Switches • Low Offset (Error) Voltage


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    PDF TN0205A/AD OT-363 SC-70 TN0205A: TN0205AD: TN0205A S-04279-- 16-Jul-01 sot363 marking qs

    sot363 marking qs

    Abstract: No abstract text available
    Text: SÌ1913EDH New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V ) 0.490 @ VGS = -4 .5 V -2 0 0.750 @ Vqs = "2 .5 1.10 @ VGs = -1 .B • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package


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    PDF 1913EDH SC-70 OT-363 SC-70 S-03175-- 05-Mar-01 SM913EDH sot363 marking qs

    LD 25 V

    Abstract: SM410
    Text: SÌ1410EDH New Product Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY V d s (V) Id (A) * D S (o n ) ( ^ ) 20 • TrenchFET Power MOSFETS: 1.8-V Rated • ESD Protected: 2000 V • Thermally Enhanced SC-70 Package 0.070 @ V GS = 4.5 V


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    PDF 1410EDH SC-70 OT-363 SC-70 S-03185-- 05-Mar-01 LD 25 V SM410

    Untitled

    Abstract: No abstract text available
    Text: TP0205A/AD Vishay Siliconix New Product P-Channel 20-V D-S MOSFETs, Low-Threshold PRODUCT SUMMARY VDS(V) -2 0 r D S (o n ) ( ß ) lD (mA) 3.8 @ V q s = -4 -5 V -1 8 0 5.0 @ V Gs = -2 .5 V -1 0 0 FEATURES BENEFITS APPLICATIONS • • • • • • •


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    PDF TP0205A/AD OT-323 OT-363 S-04279-- 16-Jul-01 16-Ju

    c639

    Abstract: C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN
    Text: SIEMENS Marking Code Sorted by Type Type Package Marking Type Package Marking BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-1 BAR 15-1 BAR 16-1 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04


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    PDF 3-03W 4-03W 5-03W OD-123 OD-323 OT-23 c639 C63716 C337 40 sot-23 MARKING 636 MARKING 68W SOT-23 C-639 F959 sot143 Marking code 5B B304A sot-89 MARKING CODE BN

    Untitled

    Abstract: No abstract text available
    Text: 1 W h ß tHEWLETT* miti» P AC KA R D 3.0 GHz Low Noise Silicon MMIC Amplifier Technical Data INA-54063 Features Surface Mount Package SOT-363 SC-70 Applications Pin Connections and Package Marking • • • • • • Ultra-Miniature Package Single 5 V Supply (29 mA)


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    PDF INA-54063 OT-363 SC-70) OT-363 OT-143 5965-5364E