transistor MJE8501
Abstract: MJE8501 je8501 IN4914 MJE8500 MJE-8501 221A-04 AN-222 S370 pd6517
Text: MOTOROLA SC 1EE D § fc.3b72SM □GöSat.'J 7 | XSTRS/R F M JE6 0 4 0 th n iM JE6 0 4 5 ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8500 MJE8501 D esign ers Data Sheet 2 .5 A M P E R E NPN SILICON POWER TR A N SISTO R S SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
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3b72S4
MJE8500
MJE8501
MJE8501
transistor MJE8501
je8501
IN4914
MJE-8501
221A-04
AN-222
S370
pd6517
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3N204
Abstract: 3N205 3N3204
Text: MOTOROLA SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC CXSTRS/R DË|t,3b72SM 96D F 82613 D0flSbl3 D M A X I M U M R A T IN G S Sym bol Value Drain-Source Voltage VD S 25 Vdc Drain-Gate Voltage Vdg 30 Vdc mA Rating Unit Drain Current Id 50 Reverse Gate Current Ig
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3b725M
3N204
3N205
O-206AF)
3N3204
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Untitled
Abstract: No abstract text available
Text: MOT ORCL A SC XSTRS/R F lEE O I t>3b72SM GGÖSTSH 3 | M A X I M U M R A T IN G S S ym bol Value U n it C o lle ctor-E m itter Voltage Vc e o 160 Vdc Collector-Base Voltage VCBO 180 Vdc thru Em itter-Base Voltage Ve b o 5.0 Vdc ic 50 m Adc MMBC1654N7L S ym bol
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3b72SM
MMBC1654N5L
MMBC1654N7L
OT-23
O-236AB)
MBC1654N5L
MMBC1654N6L
MBC1654N7L
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LB 122
Abstract: sc 1365 MPS571 MPS571B LB122
Text: 1SE D | MOTOROLA MQ TO R C LA fc>3b72SM SC b | XSTRS/R F T -2 1 -JS "“ • SEM ICOND UCTOR TECHNICAL DATA _ MPS571 MMBR571 The RF Line N P N Silicon High Frequency Transistors LOW N O ISE HIGH RF GA IN . designed for low noise, wide dynamic range front-end amplifiers and low-noise
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3b72SM
MPS571
MMBR571
O-226AA
A/500
LB 122
sc 1365
MPS571B
LB122
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md7000
Abstract: No abstract text available
Text: MOTOROLA SC M A X IM U M R A XSTRS/R F T I N G S 12E D | fc.3b72SM GOflbSS? 2 | _ Symbol Value Unft Collector-Emitter Voltage Vc e O 30 Vdc Collector-Base Voltage Vc b O so Vdc Emitter-Base Voltage Ve b O 5.0 Vdc Collector Current — Continuous
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3b72SM
MD7000
md7000
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MJ12010
Abstract: MR91S
Text: MOTOROLA SC XSTRS/R F 15 E 0 | t>3b72SM 00 05 1 0 3 2 | # MOTOROLA • SEMICONDUCTOR MJ12010 TECHNICAL DATA 10 A M P E R E HORIZONTAL DEFLECTION TRANSISTOR NPN SILICON POWER TRANSISTOR . specifically designed for use in C R T deflection circuits. • Collector-Emitter Voltage — V c E X “ 950 Volts
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3b72SM
MJ12010
11II1
MJ12010
MR91S
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sot23 transistor marking 12E
Abstract: No abstract text available
Text: M O T OR O L A SC X S T R S /R F 12E D I t>3b72SM GGf lt iOGZ 1 | M AXIM U M RATINGS Symbol Value Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VcBO 30 Vdc Emitter-Base Voltage Vebo 3.0 Vdc Symbol Max Unit PD 225 mW Rating Unit MMBTH10L CASE 318-03, STYLE 6
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3b72SM
MMBTH10L
OT-23
O-236AB)
sot23 transistor marking 12E
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Untitled
Abstract: No abstract text available
Text: M O T O RO L A SC XSTRS/R 1SE D I F b3fei7254 O G ö S i a i MOTOROLA SEMICONDUCTOR M | MJ13070 TECHNICAL DATA D e s ig n e r ’s D a ta Sheet 5 AMPERE NPN SILICON POWER TRANSISTOR SWITCHMODE II SERIES NPN SILICON POWER TRANSISTOR T h e M J 13070 tra n sisto r is d e sig n e d for high-voltage, hig h-speed ,
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b3fei7254
MJ13070
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on 5295 transistor
Abstract: transistor on 5295 BD529 transistors bd525 bd530
Text: DF|b3b72S4 MOTOROLA SC ÍXSTRS/R F> 6367254 MOTOROLA. SC ÍXSTRS/R 9 6D 8 0 6 0 7 F DDflObO? S f ~ D T - 3 3 - Ó 7 MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN SILICON AMPLIFIER TRANSISTORS 6 0 -8 0 - 100 VOLTS 10 WATTS N PN SILICON ANNULAR* AMPLIFIER TRA N SISTORS
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b3b72S4
BD525
BD527
BD529
BD526,
BD528,
BD530
BD525,
BD52C
on 5295 transistor
transistor on 5295
transistors bd525
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