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    3B72S Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD785

    Abstract: bd786 BD787 bd788 B0786 B0788 Motorola BD785 b0787 60VOLTS NPN, Si, POWER TRANSISTOR, PLASTIC
    Text: motorola sc xstrs / r 15E f D I fc,3b72S4 G G f l4 7 4cl 1 | NPN MOTOROLA BD785, BD787 SEM ICO N D U CTO R PNP TECHNICAL DATA BD786, BD788 4 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON COMPLEMENTARY PLASTIC SILICON ANNULAR* POWER TRANSISTORS . , . designed for low power audio amplifier and low current, high­


    OCR Scan     		PDF 3b72s4 BD785, BD787 BD786, BD788 BD786 BD787, 60VOLTS BD785 BD787 bd788 B0786 B0788 Motorola BD785 b0787 NPN, Si, POWER TRANSISTOR, PLASTIC

    transistor MJE8501

    Abstract: MJE8501 je8501 IN4914 MJE8500 MJE-8501 221A-04 AN-222 S370 pd6517
    Text: MOTOROLA SC 1EE D § fc.3b72SM □GöSat.'J 7 | XSTRS/R F M JE6 0 4 0 th n iM JE6 0 4 5 ! MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE8500 MJE8501 D esign ers Data Sheet 2 .5 A M P E R E NPN SILICON POWER TR A N SISTO R S SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS


    OCR Scan     		PDF 3b72S4 MJE8500 MJE8501 MJE8501 transistor MJE8501 je8501 IN4914 MJE-8501 221A-04 AN-222 S370 pd6517

    74HC77

    Abstract: No abstract text available
    Text: MOTOROLA SC -CLOGIC3- fll DE|t,3b72S2 0077^27 2 f ~ 6 3 67Z52 M O T O R O L A S C L O G IC 89D 7 7 9 2 7 'M O T O R O L A - • SEMICONDUCTOR 7- ¥ 6 - 0 7 - o f TECHNICAL DATA MC54/74HC7793 Product Preview Octal 3-State IMoninverting Transparent Latch with


    OCR Scan     		PDF 3b72S2 67Z52 MC54/74HC7793 MC54/74HC7793 74HC77

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F SbE D • fc.3b72S4 QCH0537 5 ■ MOTOROLA SEMICONDUCTOR mmmimmmmmi TECHNICAL DATA I£ "T 1 PRELIMINARY DATA MRH1230PHXV, MRH1230PHS D PR O C ESSED TO MIL-S-19500 O m im RADIATION TOLERANT TRANSISTOR 30 VOLT, 6 AM PERE U Discrete Military


    OCR Scan     		PDF 3b72S4 QCH0537 MRH1230PHXV, MRH1230PHS MIL-S-19500 b3b7254 00T0S3fl T-37-/S MRH630PHXV

    Untitled

    Abstract: No abstract text available
    Text: MOTOROL A SC X S TR S/R F 1SE D | fc>3b72S4 OOöhSSl 1 | M A X I M U M R A T IN G S Sym bol Value Collector-Emitter Voltage VcEO 12 Vdc Collector-Base Voltage VcBO 12 Vdc Emitter-Base Voltage Rating Unit Ve b o 4.0 Vdc Collector Current — Continuous 'C 50


    OCR Scan     		PDF 3b72S4 IMD4261

    6a2c

    Abstract: A1023
    Text: MOTOROLA SC M E M O R Y / A S I C 4bE D B L,3b72Sl QOôQ'îaS 7 É I M 0 T 3 8K x 9 Bit Fast Static RAM MCM6265C T -H L -X 3 -3 7 P PACKAGE 300 MIL PLASTIC CASE 71 OB Nd PACKAGE 300 MIL SOJ CASE 81 OB PIN ASSIGNMENT A8 C 1 * PIN NAMES A0-A12 . . Address Input


    OCR Scan     		PDF 3b72Sl MCM6265C A0-A12 MCM6265C MCM6265CP12 MCM6265CNJ12 MCM6265CNJ12R2 6a2c A1023

    2N2195

    Abstract: 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2N736 2n2102 motorola 2N2297 motorola 2N3019 2N699
    Text: 34 MOTOROLA SC -CDI0DES/0PT03- 6367255 MOTOROLA SC DE |t,3b72SS 0037=173 S | D IO D E S /O P T O 34C * SILICO N SM ALL-SIG NAL T R A N SISTO R DICE (continued) 37973 r-z-7-^ 2C21 02 DIE NO. — NPN LINE SOURCE — DSL7 D ¿St This die provides performance similar to that of the following device types:


    OCR Scan     		PDF -CDI0DES/0PT03- 3b72SS 2N656 2N699 2N718 2N720 2N735 2N736 2N739 2N740 2N2195 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2n2102 motorola 2N2297 motorola 2N3019

    3B2S

    Abstract: MRF428
    Text: M O T OR O L A SC XSTRS/R 4bE D F L,3b72S4 OOmbSD T MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF428 The RF Line 150 W (PEP) - 3 0 MHz RF POWER TRANSISTOR NPN S IL IC O N NPN SILICO N R F POWER TRANSISTOR . . . designed prim arily fo r high-voltage applications as a high-power


    OCR Scan     		PDF 3b72S4 MRF428 T--33--13 3B2S MRF428

    Ferroxcube core

    Abstract: PT8864 PT8864A VK21107-3B C3-250
    Text: 15E O I fc,3b72S4 000013^ S I MO TOR OLA SC MOTOROLA r- XSTRS/R F SEMICONDUCTOR TECHNICAL DATA PT8864 PT8864A The RF Line NPN Silicon VHF Pow er Transistors . . . designed for 12,5 Volt, mid-band large-signal amplifier applications in industrial and com m ercial FM equipm ent operating in the 40 to 100 MHz range.


    OCR Scan     		PDF PT8864 PT8864A 16AWG, VK211-073B Ferroxcube core PT8864A VK21107-3B C3-250

    cr8s motorola

    Abstract: MTM2N50 AN569 N250 mtp2n mtp2n50 transistor
    Text: MOTOROLA SC XSTRS/R F bflE D fc>3b72S4 ÜO^ f l S4 7 052 M OTOROLA • SEMICONDUCTOR H TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -C hannel Enhan cem en t-M ode S ilic o n Gate TMOS ROWER FET 2 AMPERES RDS(on) = 4 OHMS


    OCR Scan     		PDF s400\ cr8s motorola MTM2N50 AN569 N250 mtp2n mtp2n50 transistor

    MPSA06 transistor

    Abstract: MPS-8000 mps-a06 MPSA05 motorola SILICON DICE motorola
    Text: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC 34 &F|t.3b72SS 0030000 7 CDIODES/OPTO 3 ^c SILICON SM ALL-SIGNAL TRANSISTOR DICE continued) D IE N O . MPSAC05 — LIN E S O U R C E — T ' 2 38008 2- / NPN D M B 1 08 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF 3b72SS MPSAC05 MPS3402 MPS8000 MPSA05 MPSA06 MPSA06 transistor MPS-8000 mps-a06 MPSA05 motorola SILICON DICE motorola

    mt 1389 de

    Abstract: mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB
    Text: MOTOROLA SC XSTRS/R F 5 ti E D L>3b72S4 QGTObSb 5 MOTOROLA S E M IC O N D U C T O R n TECHNICAL DATA T Suffixes: Ulflll IMPN Silicon Sm all-Sign al Transistors s -0 7 MM3735 MM3737 DM0 Discrete Military Products - ^ H, HX, H X V Processed per MIL-S-19500/395B


    OCR Scan     		PDF 3b72S4 MM3735 MM3737 MIL-S-19500/395B O-116) mt 1389 de mt 1389 de ic NS 8002 1151 mt 1389 de motorola 2N3737 2N3735 TO-206AB

    Untitled

    Abstract: No abstract text available
    Text: M O T O R O L A SC -CLOGICÏ Tfl dF | fc,3b72Sa 0 0 7 ^ 4 5 7 1 J “ 636725? MOTOROLA SC LOGIC ' D 7^ H ~07'65 98D 79457 MC14011B, MC14Û12B See Page 6-5 MOTOROLA MC14011UB, MC14012UB See Page 6-14 MC14013B DUAL TYPE D FLIP-FLOP T h e M C 1 4 0 1 3 B d u a l ty p e D flip - flo p is c o n stru c te d w it h M O S


    OCR Scan     		PDF 3b72Sa MC14011B, MC14011UB, MC14012UB MC14013B

    bfl 177

    Abstract: IR 92 0151 motorola 600 ssd MTP2N50 mosfet ssd
    Text: MOTOROLA SC M O TO R O LA XSTRS/R F bfl E ]> • fc>3b72S4 ÜO' îflSM? 052 ■MOTf c. ■ SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet P o w er Field E ffe c t Tran sistor N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2 AMPERES RDS(on) = 4 OHMS


    OCR Scan     		PDF 3b72S4 O-204AA) 97A-01 97A-03 97A-03 O-204AE) bfl 177 IR 92 0151 motorola 600 ssd MTP2N50 mosfet ssd

    10549/BFAJC

    Abstract: No abstract text available
    Text: MOTOROLA M M SC íílEPIORY/ASI bSE D • b 3b72S l G O flW ñ T33 10549 O T O R O L A 1024-Bit Programmable Read Only Memory (PROM) ELECTRICALLY TESTED PER: MPG10549 This device is a 256-word x 4-bit field programmable read only memory (PROM). Prior to programming, all stored bit are at logic 1 (high) levels. The logic


    OCR Scan     		PDF 3b72S 10549/BXAJC 1024-Bit MPG10549 256-word 10549/BFAJC

    3N204

    Abstract: 3N205 3N3204
    Text: MOTOROLA SC -CXSTRS/R F> 6367254 Tb MOTOROLA SC CXSTRS/R DË|t,3b72SM 96D F 82613 D0flSbl3 D M A X I M U M R A T IN G S Sym bol Value Drain-Source Voltage VD S 25 Vdc Drain-Gate Voltage Vdg 30 Vdc mA Rating Unit Drain Current Id 50 Reverse Gate Current Ig


    OCR Scan     		PDF 3b725M 3N204 3N205 O-206AF) 3N3204

    2N5568

    Abstract: motorola 2N5567 2N5567 MAC4111M MAC4121M MAC4121D MAC5570 MAC4121B MAC4121N MAC5569
    Text: M O T O R O L A SC D IO DES /O PTO SSE D • fc>3b72S5 ÖÜflOTMfl 1 ■ A25i/S' Triacs Bidirectional Triode Thyristors . . . designed primarily for industrial and military applications for the fullwave control o f ac loads in applications such as light dimmers, power supplies, heating


    OCR Scan     		PDF 2N5567, MAC5569, MAC4121B 2N5568, MAC5570, MAC4121D T4101M, MAC4111M, MAC4121M MAC4121N 2N5568 motorola 2N5567 2N5567 MAC4111M MAC5570 MAC5569

    motorola U310

    Abstract: j310 fet fet j310 FET U310 U310 MOTOROLA J309 U310 fet U309 J308 J310
    Text: MOTOROLA SC { DIODES/OPTOJ 6367255 MOTOROLA SC 34 D iT|t:3b72S5 D IO D E S /O P T O 34C O D B f l O 1! ? 38047 h Q T * i I - IS ' FIELD-EFFECT TRANSISTORS DICE (continued) UC310 DIE NO. UNE SOURCE — DFM145 This die provides performance equal to or better than that of


    OCR Scan     		PDF UC310 DFM145 motorola U310 j310 fet fet j310 FET U310 U310 MOTOROLA J309 U310 fet U309 J308 J310

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F bflE ]> L 3b72S4 0 CHflb24 43b «M O Tb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet MTP1N50 Pow er Field Effect Transistor IM-Channel Enhancement Mode Silicon Gate T M O S P O W E R FE T T h is T M O S P o w e r FET is d esig n ed fo r hig h v o ltag e, high speed


    OCR Scan     		PDF 3b72S4 CHflb24 MTP1N50 21A-06 O-220AB) Y145M 221D-02 O-220 Y145M, AND-02

    mc145388

    Abstract: MC145418 cp MC145418 T113AL MC145418 c
    Text: DE I t>3b72S2 □ □ 7 i]741 1 MOTOROLA SC -CLOGIO Tfl 6367252 M O TO RO LA SC L O G IC 980 79741 - — M r - s h MC14528B O T O R O L A CM O S M SI DUAL M ONOSTABLE MULTIVIBRATOR (LOW-POWER COM PLEM ENTARY MOS) The M C14S28B multivibrator. It may produces an output


    OCR Scan     		PDF 3b72S2 MC14528B C14S28B mc145388 MC145418 cp MC145418 T113AL MC145418 c

    Z14B

    Abstract: MC14555B
    Text: MOTOROLA SC {LOGIC} Tfl 6367252 M O TO RO LA SC D E ] L>3b72Sa □D7Tñ42 4 L O G IC 98D 79842 D~ MC14555B MC14556B MOTOROLA CMOS SSI DUAL BINARY TO 1-OF-4 DECODER/DEMULTIPLEXER a O W P O W E B .C O M P L E M E N T A R V M O S ) DUAL BINARY TO VOF-4 DECODER/DEMULTIPLEXER


    OCR Scan     		PDF 3b72Sa MC14555B MC14556B 14555B 14556B Z14B

    sot89 m

    Abstract: LA2927
    Text: MOTOROLA SC XSTRS/R F a^D D MOTOROLA S E M IC O N D U C T O R f c>3b72S4 P07T T 2Ô =i Order this data sheet by M X V109/D T~" 0 * 7 -/ f TECHNICAL DATA M X V 109 S ilic o n T u n in g D io d e . designed for electronic tuning of A M receivers and high capacitance, high tuning


    OCR Scan     		PDF 3b72S4 V109/D OT-89 MK145BP, F--10 MXV109 sot89 m LA2927

    Untitled

    Abstract: No abstract text available
    Text: M O T O R O L A SC DI ODE S/OPTO 2SE D t.3b72SS 0 0 6 1 1 3 7 2 • MCR202 thru MCR206 Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for industrial/military applications such as relay and lamp drivers, small motor controllers and drivers for larger thyristors, and in


    OCR Scan     		PDF 3b72SS MCR202 MCR206 b3b72SS MCR206

    2N3495

    Abstract: No abstract text available
    Text: MOTOROLA SC XSTRS/R F b * E fc>3b72S4 ]> □ □ ‘m a ' i T^2 M A X IM U M RATINGS Rating Symbol Value Unit Em itte r-C o lle cto r V oltage v CEO -1 2 0 V dc Co lle ctor-B ase V oltag e v CBO -1 2 0 V dc Em itter-Base V oltag e VebO - 4 .5 V dc C o lle c to r Current — Co ntinu ou s


    OCR Scan     		PDF 3b72S4 2N3495 2N3495 O-205AD) 2N3497 2N3497 O-206AA)