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    3B SOT23 Search Results

    3B SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    3B SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FMMT918

    Abstract: "vhf,uhf transistor" DSA003702
    Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR FMMT918 ISSUE 2 – JANUARY 1996 PARTMARKING DETAILS – 3B E C B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 30 V Collector-Emitter Voltage VCEO 15 V Emitter-Base Voltage


    Original     		PDF FMMT918 100MHz 60MHz, 200MHz FMMT918 "vhf,uhf transistor" DSA003702

    Marking Code 2X

    Abstract: No abstract text available
    Text: MMBT4401 NPN General Purpose Transistor FEATURES • For switching and amplifier applications. • Complementary PNP Type Available MMBT4403 • ESD Capability: Machine Model, C (> 400 V) Human Body Model, 3B ( > 8 kV ) MECHANICAL DATA • Case: SOT-23 Plastic


    Original     		PDF MMBT4401 MMBT4403) OT-23 2002/95/EC Marking Code 2X

    SMD TRANSISTOR MARKING 3B

    Abstract: cmbt918
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER


    Original     		PDF ISO/TS16949 OT-23 CMBT918 C-120 SMD TRANSISTOR MARKING 3B cmbt918

    SMD TRANSISTOR MARKING 3B

    Abstract: cmbt918 transistor smd marking JT
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE


    Original     		PDF OT-23 CMBT918 C-120 SMD TRANSISTOR MARKING 3B cmbt918 transistor smd marking JT

    BC856

    Abstract: BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E


    Original     		PDF OT-23 BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B BC856A BC856B BC857 BC857A BC857B BC857C BC858 BC858A BC858B

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BC856 BC857 BC858 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transisto rs Marking BC856 = 3D BC856A = 3A BC856B = 3B BC857 = 3H BC857A = 3E


    Original     		PDF OT-23 BC856 BC857 BC858 BC856 BC856A BC856B BC857A BC857B

    ts 4141 TRANSISTOR smd

    Abstract: CMBT918 transistor marking SA p sot-23 c120 equivalent SMD TRANSISTOR MARKING 3B
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF OT-23 CMBT918 C-120 ts 4141 TRANSISTOR smd CMBT918 transistor marking SA p sot-23 c120 equivalent SMD TRANSISTOR MARKING 3B

    Untitled

    Abstract: No abstract text available
    Text: DB3X201K Silicon epitaxial planar type Unit: mm For high frequency rectification • Features  Small reverse current IR  Low forward voltage VF  Halogen-free / RoHS compliant EU RoHS / UL-94 V-0 / MSL: Level 1 compliant  Marking Symbol: 3B  Packaging


    Original     		PDF DB3X201K UL-94 DB3X201K0L

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT918 VHF/UHF TRANSISTOR N–P–N transistor Marking CMBT918 = 3B PACKAGE OUTLINE DETAILS


    Original     		PDF OT-23 CMBT918 C-120

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT918 VHF/ UHF TRANSISTOR N–P–N transisto r Marking CMBT918 = 3B Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS


    Original     		PDF OT-23 CMBT918 C-120

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    PN918

    Abstract: MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor
    Text: MMBT918 PN918 C E C B TO-92 SOT-23 E B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings* Symbol


    Original     		PDF MMBT918 PN918 OT-23 PN918 MMBT918 mark 3b RF TRANSISTOR SOT23 5 P431 PN918 transistor

    y 331 Transistor

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C C B E TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 y 331 Transistor

    Untitled

    Abstract: No abstract text available
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23

    mmbt918

    Abstract: PN918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch
    Text: PN918 / MMBT918 MMBT918 PN918 C E C B TO-92 B SOT-23 E Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range. Sourced from Process 43. Absolute Maximum Ratings*


    Original     		PDF PN918 MMBT918 PN918 OT-23 mmbt918 Intermediate frequency Semiconductor RF CBVK741B019 F63TNR PN2222N npn transistor wc 14inch

    Vishay diodes code marking

    Abstract: marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23
    Text: VISHAY Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 18904 Figure 4. SOD-323 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year


    Original     		PDF OD-323 LLP75-3A, LLP75-3B OD-523 DO-219AB) OT-23 OD-123 06-May-04 DO-35 Vishay diodes code marking marking code vishay label VISHAY MARKING CODE Vishay SOT23 MARKING F5 Vishay DaTE CODE marking code vishay MARKING CODE f5 SOD-523 DO-219AB marking CODE n5 marking l4 sot-23

    sot-23 Marking 3D

    Abstract: BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858
    Text: PNP General Purpose Transistor: BC856/857/858 Features: tLow current max.100mA tLow voltage (max.65v) Applications: t SOT-23 Ordering Information Type No. Marking: Package Code: BC856A/B 3D/3A/3B SOT-23 BC857A/B/C 3H/3E/3F/3G SOT-23 BC858A/B/C 3J/3K/3L


    Original     		PDF BC856/857/858 100mA) OT-23 BC856A/B BC857A/B/C BC858A/B/C BC856 sot-23 Marking 3D BC856 sot-23 MARKING CODE 3d 3D marking sot23 3H SOT23 BC856B SOT23 BC856A BC856B BC857 BC858

    F5 marking code

    Abstract: MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123
    Text: Vishay Semiconductors Marking of Diodes View from top View from top R9 F5 Date code: R = Year 9 = Month Type code Cathode band Type code Pin 1 18919 Figure 4. SOD-323 18904 Figure 1. LLP75-3A, LLP75-3B FC View from top N5 H3 Cathode Date code: N = Year 5 = Month


    Original     		PDF OD-323 LLP75-3A, LLP75-3B OD-523 DO-219AB) OT-23 OD-123 06-May-04 F5 marking code MARKING CODE f5 marking code vishay label SMF DO-219AB Vishay diodes code marking Vishay DaTE CODE DO-219AB marking L4 SOD123 SOD-523 DO-219AB SOD-80 sod123

    U92 QUANTA

    Abstract: South Bridge ALI M1535 varta D45 R1019 FM ic B201212K800 DL521 quanta quanta computer quanta u92 U92 QUANTA REV:D
    Text: 5 4 3 2 1 Model MODEL REV PM1 M/B BOARD 1A 2A D 3A CHANGE LIST Page First Release reference ECN E200210-0300 reference ECN E200211-0666 reference ECN E200211-1777 3B 3C reference ECN E200212-1903 reference ECN E200301-0426 C B PM1 M/B BOARD FM 1 1A 2 1A 3


    Original     		PDF E200210-0300 E200211-0666 E200211-1777 E200212-1903 E200301-0426 31PM1MB0007 HOLE-C217D142P2 HOLE11 HOLE12 U92 QUANTA South Bridge ALI M1535 varta D45 R1019 FM ic B201212K800 DL521 quanta quanta computer quanta u92 U92 QUANTA REV:D

    MMBT918

    Abstract: No abstract text available
    Text: i, Una. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 PN918 MMBT918 TO-92 SOT-23 Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.


    Original     		PDF PN918 MMBT918 OT-23 100MHz MMBT918

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSUE 2 - JANUARY 1996_ PARTMARKING D E T A ILS - 3B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage V VALUE UNIT cbo 30 V Collector-Emitter Voltage V CEO 15 V Emitter-Base Voltage


    OCR Scan     		PDF lc-10mA, 100MHz 60MHz, 200MHz Width-300ns.

    Untitled

    Abstract: No abstract text available
    Text: SOT23 NPN SILICON PLANAR VHF/UHF TRANSISTOR ISSU E 2 - JANUARY 1996_ P A R T M A R K IN G D E T A IL S - 3B ABSOLUTE M A X IM U M RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage SY M B O L VALUE UNIT V CBO 30 V V CEO 15 V


    OCR Scan     		PDF 100MHz 60MHz, 200MHz

    marking B2

    Abstract: top marking B4 sot23
    Text: MOTORO LA SC -CDIODES/OPTO} :f 6367255 M O TO RO LA SC 34 CE |b 3b ?5 SS 003flSfl0 1 |~~ 34 C D IO D E S / O P T O 38280 D T -ir - 0? SOT23 (continued) MMBC1621 B2,3,4 DEVICE NO. SMALL-SIGNAL NPN TRANSISTORS TOP VIEW C I I nr • Designed for high-speed switching applications.


    OCR Scan     		PDF 003flSfl0 MMBC1621 MMBC1621B2 MMBC1621B3 MMBC1621B4 MMBC1621B4 marking B2 top marking B4 sot23

    Untitled

    Abstract: No abstract text available
    Text: Discrete POWER & Signal Technologies S iM IC D N P U C T O B MMBT918 PN918 C < \' TO-92 SOT-23 BE B Mark: 3B NPN RF Transistor This device is designed for use as RF amplifiers, oscillators and multipliers with collector currents in the 1.0 mA to 30 mA range.


    OCR Scan     		PDF MMBT918 PN918 OT-23 400il, PN918