1E14
Abstract: 2E12 FRL9230D FRL9230H FRL9230R
Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30Ω TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current
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FRL9230D,
FRL9230R,
FRL9230H
-200V,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
1E14
2E12
FRL9230D
FRL9230H
FRL9230R
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Rad Hard in Fairchild for MOSFET
Abstract: 1E14 2E12 FRL9230D FRL9230H FRL9230R
Text: FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Title RL9 0D, L92 R, L92 H bt A, 0V, m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, m, d rd, Features Package • 3A, -200V, RDS on) = 1.30Ω TO-205AF
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FRL9230D,
FRL9230R,
FRL9230H
-200V,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
Rad Hard in Fairchild for MOSFET
1E14
2E12
FRL9230D
FRL9230H
FRL9230R
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1E14
Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 40842
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL9230D,
FSL9230R
-200V,
1E14
2E12
FSL9230D
FSL9230D1
FSL9230D3
FSL9230R
FSL9230R1
40842
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1E14
Abstract: 2E12 FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL9230D,
FSL9230R
-200V,
O-205AF
254mm)
FSL9230R
1E14
2E12
FSL9230D
FSL9230D1
FSL9230D3
FSL9230R1
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integrated circuits equivalents list
Abstract: Rad Hard in Fairchild for MOSFET
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 3A, -200V, rDS ON = 1.50Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event
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FSL9230D,
FSL9230R
-200V,
integrated circuits equivalents list
Rad Hard in Fairchild for MOSFET
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IRF9622
Abstract: IRF9620 IRF9623 IRF9621 TB334
Text: IRF9620, IRF9621, IRF9622, IRF9623 S E M I C O N D U C T O R -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF9620,
IRF9621,
IRF9622,
IRF9623
-150V
-200V,
-200V
IRF9622
IRF9620
IRF9623
IRF9621
TB334
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diode D32-02
Abstract: DIODE D32 -02 ERD32 diode D32 200V 3A
Text: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications
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ERD32
ERD32
diode D32-02
DIODE D32 -02
diode D32
200V 3A
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diode D32-02
Abstract: No abstract text available
Text: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications
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ERD32
et-01
ERD32
diode D32-02
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diode D32-02
Abstract: C3150 D32-02
Text: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications
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ERD32
ERD32
diode D32-02
C3150
D32-02
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diode D32-02
Abstract: D3202 ERD32
Text: ERD32 3A ( 100 to 200V / 3A ) Outline drawings, mm FAST RECOVERY DIODE ø 6.4 ø 1.2 7.5 30 MIN. Features 30 MIN. Marking Super high speed switching Low VF in turn on Color code : Orange High reliability D32 02 Abridged type name Voltage class Applications
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ERD32
diode D32-02
D3202
ERD32
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TF561S
Abstract: Thyristor to220 600v 12A TO220F TF541M TF321S tf541m 22 l
Text: Selection Guide Thyristors Type Rated Current 3A General purpose 5A 8A High sensitivity Array 3A 5A 5A x 4 circuits 200V TF321M TF321S TF521M TF521S TF821M TF821S TF321M-A — — Reverse Voltage 400V 600V TF341M TF361M TF341S TF361S TF541M TF561M ✽ TF541S
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TF321M
TF321S
TF521M
TF521S
TF821M
TF821S
TF321M-A
TF341M
TF361M
TF341S
TF561S
Thyristor to220
600v 12A TO220F
TF541M
tf541m 22 l
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Untitled
Abstract: No abstract text available
Text: ｓ DIODE Type : 30PDA20 OUTLINE DRAWING 3A 200V Tj =150 °C FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PDA20
30PDA20
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GF30DL
Abstract: GF30GL GF30JL GF30KL GF30ML
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications
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GF30DL
GF30ML
140Amp
DO-214AA
DO-214AA
MIL-STD-750,
GF30GL
GF30JL
GF30KL
GF30ML
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30PDA20
Abstract: 10 DC-4 diode
Text: ｓ DIODE Type : 30PDA2 DA20 OUTLINE DRAWING 3A 200V Tj =150 °C FEATURES * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability Maximum Ratings Approx Net Weight:1.24g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current
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30PDA20
Char100
30PDA20
10 DC-4 diode
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|
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GF30D
Abstract: No abstract text available
Text: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications
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GF30DL
GF30ML
140Amp
DO-214AA
DO-214AA
MIL-STD-75
GF30D
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S3L20U
Abstract: TL128
Text: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS S3L20U Case : AX14 Unit : mm 200V 3A FEATURES Low noise trr35ns Applicable to Automatic Insertion APPLICATION Switching power supply Free Wheel Home Appliances, Office Equipment Telecommunication, Factory Automation
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S3L20U
trr35ns
S3L20U
TL128
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NTE588
Abstract: No abstract text available
Text: NTE588 Silicon Diode 200V, 3A, Ultra Fast Switch Features: D High Reliability D Low Leakage D Low Forward Voltage D High Current Capbility D D D D Super Fast Switching Speed < 35nS High Surge Capability High Surge Capability Good for 200kHz Power Supplier
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NTE588
200kHz
155pF
NTE588
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S3L20U
Abstract: TL128
Text: SHINDENGEN Super Fast Recovery Rectifiers Single OUTLINE DIMENSIONS S3L20U Case : AX14 Unit : mm 200V 3A FEATURES Low noise trr35ns Applicable to Automatic Insertion APPLICATION Switching power supply Free Wheel Home Appliances, Office Equipment Telecommunication, Factory Automation
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S3L20U
trr35ns
S3L20U
TL128
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Untitled
Abstract: No abstract text available
Text: FSL9230D, FSL9230R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros ON = 1 -50ii The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSL9230D,
FSL9230R
-200V,
O-205AF
254mm)
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Untitled
Abstract: No abstract text available
Text: y*Rg*s FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3A, -200V, RDS on = 1.30£i TO-205AF • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)
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OCR Scan
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PDF
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FRL9230D,
FRL9230R,
FRL9230H
-200V,
O-205AF
100KRAD
300KRAD
1000KRAD
3000KRAD
|
40842
Abstract: No abstract text available
Text: ffj h a fr fr is U FSL9230D, S E M I C O N D U C T O R 3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 3A, -200V, ros QN = 1.50Q The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs
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OCR Scan
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PDF
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FSL9230D,
-200V,
MIL-STD-750,
MIL-S-19500,
-160V,
100ms;
500ms;
40842
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Untitled
Abstract: No abstract text available
Text: h a r r IRF9620, IRF9621, IRF9622, IRF9623 i s s e m i c o n d u c t o r -3A and -3.5A, -150V and -200V, 1.5 and 2.4 Ohm, P-Channel Power MOSFETs July 1998 Features Description • -3A and -3.5A, -150V and -200V • High Input Impedance These are P-Channel enhancement mode silicon gate
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OCR Scan
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PDF
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IRF9620,
IRF9621,
IRF9622,
IRF9623
-150V
-200V,
-200V
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Untitled
Abstract: No abstract text available
Text: ì li h a r r is U U S E M I C O N D U C T O R FRL9230D, FRL9230R, FRL9230H 3A, -200V, 1.30 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 3 A, -200V, RDS on = 1.30i! TO-2Q5AF • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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PDF
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FRL9230D,
FRL9230R,
FRL9230H
-200V,
100KRAD
300KRAD
1000KRAD
3000KRAD
732UIS
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Untitled
Abstract: No abstract text available
Text: S3 A315 Series 3A, 50V - 200V Ultrafast Diodes December 1993 Package Features AL-4 • Glass Passivated Junction TOP VIEW • Ultra-Fast Recovery Times • Low Forward Voltage Drop, High-Current Capability • Low Leakage Current ANODE • High Surge Current Capability
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OCR Scan
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PDF
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A315A,
A315B,
A315F,
A315G
50/100NS/CM)
25VDC
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