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    Abstract: No abstract text available
    Text: 3VD396500YL 3VD396500YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD396500YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;


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    PDF 3VD396500YL 3VD396500YL O-220