BR 1n70
Abstract: 1N70
Text: 3VD186700YL 3VD186700YL 高压MOSFET芯片 描述 Ø 3VD186700YL为采用硅外延工艺制造的N沟道 增强型700V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；
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3VD186700YL
3VD186700YL
3VD186700YLN
700VMOS
O-251-3L
BR 1n70
1N70
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BR 1n70
Abstract: 4570 1N70 3VD186700YL
Text: 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø Advanced termination scheme to provide enhanced Ø Avalanche Energy Specified
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3VD186700YL
3VD186700YL
O-251-3L
BR 1n70
4570
1N70
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Untitled
Abstract: No abstract text available
Text: 3VD186700YL 3VD186700YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD186700YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.
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3VD186700YL
3VD186700YL
O-251-3L
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