3sk285
Abstract: No abstract text available
Text: 3SK285 High Frequency FETs 3SK302 Tentative , 3SK306(Tentative) Silicon N-Channel MOS 3SK302 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95
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3SK285
3SK302
3SK306
3SK302
800MHz
3sk285
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Untitled
Abstract: No abstract text available
Text: High Frequency FETs 3SK302 Tentative , 3SK306 (Tentative) Silicon N-Channel MOS FET For low-voltage operating UHF amplification 3SK302 • Features ● Achieving the equivalent performance to the conventional products under low voltage operation. ● Mini-type/S-mini type package, allowing downsizing of the sets
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3SK302
3SK306
800MHz
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Untitled
Abstract: No abstract text available
Text: High Frequency FETs 3SK302 Tentative , 3SK306 (Tentative) Silicon N-Channel MOS FET For low-voltage operating UHF amplification 3SK302 • Features ● Achieving the equivalent performance to the conventional products under low voltage operation. ● Mini-type/S-mini type package, allowing downsizing of the sets
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3SK302
3SK306
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MN1873287
Abstract: an6512n 2sk3190 MN171202 mn158413 mn15142 mn187164 mn6740 AN7210 MN15283
Text: Maintenance and Discontinued Types <Maintenance Types> Maintenance and Discontinued Types This product is not dealt with anymore. Customers dealing with this product conventionally may contact our sales division in the case of ambiguity. <Discontinued Types>
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MN101C01C
MN15224
MN101C01D
MN15226
MN101C027
MN15261
MN101C03A
MN101C38A
MN15263
MN101C06D
MN1873287
an6512n
2sk3190
MN171202
mn158413
mn15142
mn187164
mn6740
AN7210
MN15283
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3SK302
Abstract: s-mini 3SK306
Text: Panasonic H ig h F r e q u e n c y FE T s 3SK302 Tentative , 3SK306(Tentative) Silicon N -Channel MOS 3SK 302 For UHF amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con ventional product. -e h EE
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3SK302
3SK306
3SK302
800MHz
s-mini
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3SK302
Abstract: 3SK306
Text: Panasonic H igh F req u en cy FETs 3SK302 Tentative , 3SK306(Tentative) Silicon N-Channel MOS 3SK302 For UHF amplification Unit : mm • Features • Though low voltage operation, performance is equivalent to the con ventional product. -EE 3 Be • Downsizing of sets by mini or S-mini type package, and automatic
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3SK302
3SK306
100hA
VDS-10V
800MHz
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Untitled
Abstract: No abstract text available
Text: Panasonic High Frequency FETs 3SK302 Tentative , 3SK306 (Tentative) Silicon N-Channel MOS FET For lo w -v o lta g e o p e ra tin g UHF a m p lific a tio n 3SK302 • Features 0 Achieving the equivalent performance to the conventional prod ucts under low voltage operation.
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3SK302
3SK306
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AN3962FB
Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Text: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030
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MN101C01C
MN101C01D
MN101C025
MN1020003
MN1020004A
MN1020004AFB
MN1020012A
MN1020
12AFA
MN1020015
AN3962FB
MN1880023
mn19412
MN1874033
IC AN7135
an3814k
MN1883214
an8294nsb
mn4117405
mn171202
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