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    3N163 Search Results

    3N163 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SIT8008BI-32-33N-16.384000 SiTime 1 to 110 MHz, Low Power Oscillator Datasheet
    SiT2018BA-S1-33N-16.384000 SiTime 1 to 110 MHz, High Temperature (-40 to +125°C) SOT23 Oscillator Datasheet
    SIT8008BI-31-33N-16.384000 SiTime 1 to 110 MHz, Low Power Oscillator Datasheet
    SIT9366AI-2E3-33N163.750000 SiTime 1 to 220 MHz, Low Jitter Differential XO Datasheet
    SIT9366AI-2E3-33N163.700000 SiTime 1 to 220 MHz, Low Jitter Differential XO Datasheet
    SF Impression Pixel

    3N163 Price and Stock

    Linear Integrated Systems 3N163 SOT-143 4L ROHS

    P-CHANNEL, SINGLE ENHANCEMENT MO
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    DigiKey 3N163 SOT-143 4L ROHS Reel 6,000 3,000
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    3N163 SOT-143 4L ROHS Cut Tape 2,298 1
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    3N163 SOT-143 4L ROHS Digi-Reel 1
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    Linear Integrated Systems 3N163 TO-72 4L ROHS

    P-CHANNEL, SINGLE ENHANCEMENT MO
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    DigiKey 3N163 TO-72 4L ROHS Bulk 950 1
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    Suntsu Electronics Inc STC22K33N16-38.400M

    XTAL OSC TCXO 38.4000MHZ SNWV
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    DigiKey STC22K33N16-38.400M Bulk 100 1
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    Vishay Siliconix 3N163

    MOSFET P-CH 40V 50MA TO72
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    ES Components 3N163 13,758
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    Vishay Siliconix 3N163-2

    MOSFET P-CH 40V 50MA TO72
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    3N163 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Type PDF
    3N163 Calogic 40 V, P-Channel enhancement mode JFET general purpose amplifier switch Original PDF
    3N163 Linear Integrated Systems P-CHANNEL ENHANCEMENT MODE MOSFET Original PDF
    3N163 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 50MA TO-72 Original PDF
    3N163 Vishay Telefunken TRANS MOSFET P-CH 40V 0.05A 4TO-206AF Original PDF
    3N163 Calogic P-Channel Enhancenment mode MOSFET General Purpose Amplifier Switch Scan PDF
    3N163 General Instrument Short Form Data 1976 Short Form PDF
    3N163 Intersil Shortform Data Book 1983/4 Short Form PDF
    3N163 Intersil P-channel enchancement mode MOSFET general purpose amplifier/switch. Scan PDF
    3N163 Intersil Data Book 1981 Scan PDF
    3N163 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    3N163 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    3N163 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    3N163 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N163 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    3N163 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    3N163 Siliconix MOSPOWER Design Data Book 1983 Scan PDF
    3N163 Siliconix FET Design Catalogue 1979 Scan PDF
    3N163 Vishay Siliconix Shortform Siliconix Datasheet Short Form PDF
    3N163-2 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 40V 50MA TO-72 Original PDF
    3N163-2 Vishay Telefunken TRANS MOSFET P-CH 40V 0.05A 4TO-206AF Original PDF

    3N163 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    3N163

    Abstract: TO72 package
    Text: 3N163 P-CHANNEL MOSFET The 3N163 is an enhancement mode P-Channel Mosfet The 3N163 is an enhancement mode P-Channel Mosfet designed for use as a General Purpose amplifier or switch The hermetically sealed TO-72 package is well suited for high reliability and harsh environment applications.


    Original     		PDF 3N163 3N163 375mW TO72 package

    electrometer

    Abstract: 3N163 3N164
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 18-Jul-08 electrometer 3N163 3N164

    3N164

    Abstract: 3N163
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 P-37404--Rev. 04-Jul-94 3N164 3N163

    3N163

    Abstract: 3N164
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 P-37404--Rev. 04-Jul-94 3N163 3N164

    3n163

    Abstract: P-Channel MOSFETs
    Text: Part No. 3N163-E3 P-Channel MOSFETs Single Configuration Package: TO-72 VDS (Max)(V): -70 ID (Max)(A): -30 RDS(on) Max (Ω) @ VGS=10V: 250 @ 20V PD (Max) (W): 0.375


    Original     		PDF 3N163-E3 3n163 P-Channel MOSFETs

    3N163

    Abstract: 3N164
    Text: 3N163/164 Siliconix PĆChannel EnhancementĆMode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 -40 -2 to -5 250 -5 0.7 18 3N164 -30 -2 to -5 300 -3 0.7 18 Features


    Original     		PDF 3N163/164 3N163 3N164 3N163/164 P37404Rev. 3N163 3N164

    ultra low igss pA

    Abstract: electrometer ultra low igss High Conductance Low Leakage Diode To-206AF 3N163 3N164
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOS Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18 Features


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 P-37404--Rev. 04-Jul-94 ultra low igss pA electrometer ultra low igss High Conductance Low Leakage Diode To-206AF 3N163 3N164

    3N163

    Abstract: 3N164
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage


    Original     		PDF 3N163, 3N164 3N163 375mW RIN10M 300ms. 3N163 3N164

    Untitled

    Abstract: No abstract text available
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise stated Drain-Source or Drain-Gate Voltage 3N163 -40V


    Original     		PDF 3N163, 3N164 3N163 375mW2 OT-143 350mW3 OT-143

    3N163

    Abstract: 3N164
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 08-Apr-05 O206AF 06-Jul-01 S-03946--Rev. 09-Jul-01 3N163 3N164

    3n164 equivalent

    Abstract: 3N163 3N163-64 3N164
    Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch CORPORATION 3N163 / 3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (TA = 25oC unless otherwise specified) FEATURES • Very High Input Impedance • High Gate Breakdown Switching • Fast • Low Capacitance


    Original     		PDF 3N163 3N164 3N163. 3N164. -10mA, 3N163 3n164 equivalent 3N163-64 3N164

    3n163

    Abstract: No abstract text available
    Text: 3N163 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Diod. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 3N163 Availability Online Store Diodes


    Original     		PDF 3N163 3N163 STV3208 1N4510 500ns) LM3909N

    Untitled

    Abstract: No abstract text available
    Text: 3N163/3N164 P-Channel Enhancement-Mode MOSFET Transistors Product Summary Part Number V BR DSS Min (V) VGS(th) (V) rDS(on) Max (W) ID(on) Min (mA) Crss Max (pF) tON Typ (ns) 3N163 –40 –2 to –5 250 –5 0.7 18 3N164 –30 –2 to –5 300 –3 0.7 18


    Original     		PDF 3N163/3N164 3N163 3N164 3N163/164 08-Apr-05

    M116 CALOGIC

    Abstract: No abstract text available
    Text: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 M OSFET'S lgss V gs t h r ds( on ) cr ss P/ N ( pA( m a x ) ) ( V( m ax) ( oh m ( m a x ) ) ( pf( m a x ) ) 3N163 - 10 -5 250 .7 3N164 - 10 -5 300 .7 3N165 - 10 -5 300


    Original     		PDF 3N163 3N164 3N165 3N166 3N170 3N171 3N172 3N173 3N190 3N191 M116 CALOGIC

    3N163

    Abstract: 3N164 3N170
    Text: G E SOLI» STATE DE|3fl7S0fil D Gli DIS 1 | DI 3875081 G E SOLID STATE 01E 11015 3N163, 3N164 3N163, 3N164 P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch FEATURES • • • • T - 3 7 - 3 5 ABSOLUTE MAXIMUMRATINGS Notei (Ta = 25°C unless otherwise noted)


    OCR Scan     		PDF 3N163, 3N164 T-37-35 3N163 -10mA 3N163 3N164 3N170

    3N163

    Abstract: 3N164 3N170
    Text: D M üm 3N163, 3N164 P-Channel Enhancem ent Mode MOS FIET FEATURES • V ery High Input Impedance • High Gate Breakdown • Fast Switching • Low Capacitance PIN CONFIGURATION CHIP TOPOGRAPHY 1503- 2! MAXIMUM RATINGS @ 2 5 °C ambient unless noted} 3 N 163


    OCR Scan     		PDF 3N163, 3N164 3N163 3N164 1503-Z -10mA 3N170

    Untitled

    Abstract: No abstract text available
    Text: 3N163. 3N164. LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)


    OCR Scan     		PDF 3N163. 3N164. 3N163 3N164 375mW 300ms.

    3N163-3N164

    Abstract: No abstract text available
    Text: 3N163. 3N164 LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Drain-Source or Drain-Gate Voltage 3N163 3N164 Transient G-S Voltaae (NOTE 1) Drain Current Storage Temperature


    OCR Scan     		PDF 3N163. 3N164 3N163 3N164 375mW 200ns 300ms. 3N163-3N164

    3n164

    Abstract: No abstract text available
    Text: TY P ES 3N163, 3N164 P-C H A N N EL EN H A N C EM EN T-T YP E IN S U L A T E D -G A T E F IE L D -E F F E C T T R A N S IS T O R S B U L L E T I N N O . D L -S 7 2 1 1 7 5 0 , J U L Y 1 9 7 2 - R E V 1 S E D N O V E M B E R 1 9 7 2 ENHANCEMENT-TYPE"!" MOS SILIC O N TRAN SISTO RS


    OCR Scan     		PDF 3N163, 3N164

    Untitled

    Abstract: No abstract text available
    Text: CT"Silicoriix MRA P-Channel Enhancement-Mode MOSFET in c o r p o r a te d lw l • TYPE PACKAGE DEVICE Single TO-72 T0206AF • 3N163,3N164 Single Chip • Available as MRA1CHP TYPICAL CHARACTERISTICS Output Characteristics Transfer Characteristics VDS (V)


    OCR Scan     		PDF T0206AF) 3N163 3N164

    siliconix 3n163

    Abstract: No abstract text available
    Text: Tem ic 3N163/164_ siiicûnix P-Channel Enhancement-Mode MOS Transistors Product Summary P art N um ber V br DSS Min (V) v GS(th) r DS(on) M ax (a) Ì d (òh) M in (mA) CrsS Max »ON Typ (V) (pF) (ns) 3N163 -4 0 - 2 to - 5 250 -5 0.7


    OCR Scan     		PDF 3N163/164_ 3N163 3N164 3N163/164 P-37404--Rev. 3N163/164 siliconix 3n163

    3N163

    Abstract: 3N163-64 3N164
    Text: P-Channel Enhancement Mode MOSFET General Purpose Amplifier Switch 3N163/3N164 ABSOLUTE MAXIMUM RATINGS Note 1 (Ta = 25°C unless otherwise specified) FEATURES • • • • Very High Input Impedance High Gate Breakdown Fast Switching Low Capacitance Drain-Source or Drain-Gate Voltage


    OCR Scan     		PDF 3N163/3N164 to-72 3N163 3N164. 3N163. 3N164 -10mA 200ns 3N163 3N163-64 3N164

    Untitled

    Abstract: No abstract text available
    Text: 3N163. 3N164 LINEAR SYSTEMS P-CHANNEL ENHANCEMENT MODE MOSFET Linear Integrated Systems FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted)


    OCR Scan     		PDF 3N163. 3N164 3N163 3N164 375mW 3N163) 3N164) 200ns 300ms.

    3N163

    Abstract: 3N164 3N165 3N166 3N169 3N172 3N173 3N188 3N189 3N190
    Text: » M © Ï F ©Ä¥Ä[L© LOW P O W E R FIELD E FFE C T T R A N S IS T O R S Typ« Number Case Style (TO - 3N163 3N164 3N172 3N173 72 72 72 72 Igss Max (PA) Min Geometry V(Br)da* Min (V) FMP1.1 FMP1.1 FMPZ1.1 FMPZ1.1 40 30 40 30 10 10 200 200 2.0 2.0


    OCR Scan     		PDF 3N163 3N164 3N172 3N173 2000u 1500u 4000u 3N165 3N166 3N169 3N188 3N189 3N190