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    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-3P Plastic-Encapsulate Transistors 3DA5200B TO – 3P TRANSISTOR NPN 1. BASE FEATURES z High Breakdown Voltage z High Current and Power Capacity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)


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    PDF 3DA5200B 800mA