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    Text: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


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    BBS33F; 3D93Sf BD937F; BD939F BD941F 711002b OT186 BD934F, BD936F, BD938F, PDF