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Catalog Datasheet	MFG & Type	PDF	Document Tags
fet 544 a Abstract: MGFC39V6471 Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V6471 , o t p ,o d u c « 0 " u 6 . 4 - 7 .2 G H z BAND 8 W IN TERNALLY MATCHED GaAs FET DESCRIPTION The 39V6471 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	PDF	39V6471 MGFC39V6471 fet 544 a

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fet 544 a

Abstract: MGFC39V6471
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V6471 , o t p ,o d u c « 0 " u 6 . 4 - 7 .2 G H z BAND 8 W IN TERNALLY MATCHED GaAs FET DESCRIPTION The 39V6471 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic

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39V6471 MGFC39V6471 fet 544 a