39V6471 Search Results

fet 544 a

Abstract: MGFC39V6471
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V6471 , o t p ,o d u c « 0 " u 6 . 4 - 7 .2 G H z BAND 8 W IN TERNALLY MATCHED GaAs FET DESCRIPTION The 39V6471 is an internally impedance-matched GaAs power FET especially designed for use in 6.4 ~ 7.2 GHz band amplifiers. The hermetically sealed metal-ceramic