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    39 77 IN SOT-89 PACKAGE Search Results

    39 77 IN SOT-89 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    39 77 IN SOT-89 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    68W SOT

    Abstract: ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE
    Text: Small CHIPS for big visions Schottky Diodes h t t p : / / w w w. i n f i n e o n . c o m Never stop thinking. max. max. typ typ t ion lica V R=0 V CT UF ( typ App ) IF = 10 m A ) IF = 1m A UF ( IF Sin gle Dua l iso lat e Dua d l se ries Dua l co m. Cat Dua


    Original     		PDF B132-H7456-GI-X-7600 68W SOT ultra low noise 12GHz 64W SOT23 AUs SOT363 BAS 40-04 Infineon BAS 68-04 BAT 43 - 46 - 85 - 86 61 SIEMENS DIODE BAT 19 SOT143 DUAL DIODE

    Infineon technology roadmap for mosfet

    Abstract: germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor
    Text: Small CHIPS for big visions Silicon Discretes www.infineon.com Never stop thinking. INTRODUCTION O n e o f t h e w o r l d ' s major manufacturers of radio frequency RF components, Infineon Technologies is committed to innovative technologies and products, flexible service and the very best supply conditions for customers and partners.


    Original     		PDF B191-H7496-G1-X-7600 Infineon technology roadmap for mosfet germanium transistor pnp smd smd mosfet sot-363 microwave transistor siemens bfp 420 varactor flip chip radar 77 ghz sige Infineon automotive semiconductor technology roadmap transistor SMD DK qs siemens spc 2 SiGe PNP transistor

    PRF10

    Abstract: MBC13916 MBC13916T1 MRFIC0916 937 motorola 0933 34 motorola zc 527
    Text: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is


    Original     		PDF MBC13916/D MBC13916 MBC13916 MRFIC0916 MRFIC0916, PRF10 MBC13916T1 937 motorola 0933 34 motorola zc 527

    motorola zc 527

    Abstract: S12 sot 23-6
    Text: MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is


    Original     		PDF MBC13916 MBC13916 MRFIC0916 MRFIC0916, motorola zc 527 S12 sot 23-6

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MBC13916/D MBC13916 The RF Building Block Series General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with Motorola’s Advanced RF BiCMOS process using the SiGe:C module. It is


    Original     		PDF MBC13916/D MBC13916 MBC13916 MRFIC0916 MRFIC0916, MBC13916/D

    MBC13916

    Abstract: MBC13916T1 MRFIC0916 motorola zc 527 Motorola Zc 34
    Text: Freescale Semiconductor, Inc. Order this document by MBC13916/D MBC13916 The RF Building Block Series Freescale Semiconductor, Inc. General Purpose SiGe:C RF Cascode Amplifier GENERAL PURPOSE SiGe:C RF CASCODE AMPLIFIER The MBC13916 is a cost–effective, high isolation amplifier fabricated with


    Original     		PDF MBC13916/D MBC13916 MBC13916 MRFIC0916 MRFIC0916, MBC13916T1 motorola zc 527 Motorola Zc 34

    MAX6809

    Abstract: ST 9727 st 9635 st 9548 12x12 bga thermal resistance MAX232CWE 9846B MAX232 integrated chips 9836 maxim iso 9717
    Text: November 1999 Surface-Mount Devices Reliability Report This report presents reliability data for Maxim’s surface-mount devices, including the results of extensive reliability stress tests performed solely on epoxy surface-mount packages since 1995. Maxim’s surface-mount packages are subjected to standard


    Original     		PDF 1-888-MAXIM-IC MAX6809 ST 9727 st 9635 st 9548 12x12 bga thermal resistance MAX232CWE 9846B MAX232 integrated chips 9836 maxim iso 9717

    marking 47 gain block sot-363

    Abstract: No abstract text available
    Text: MBC13720 The RF Building Block Series SiGe:C Low Noise Amplifier with Bypass Switch The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz multistandard wireless applications. The input and output match is external to allow maximum design flexibility. The LNA has two selectable


    Original     		PDF MBC13720 MBC13720 marking 47 gain block sot-363

    bc352

    Abstract: KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode
    Text: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 30 Motorola Motorola See Index See Index See Index See Index See Index See Index See Index See Index ~ee In~ex See Index Motorola See Index See Index Space Power Genrl Diode Diode Trails See Index See Index


    Original     		PDF MPS5142 MPS5143 2N998 2N3677 2N2411 2N1991 PN5143 2N5143 2N2802 2N2803 bc352 KM90 BC370 K9015 2N3341 2N5242 OC201 2u 64 diode

    608-25

    Abstract: sot-363 651 602 SOT-363 transistor motorola 236 MBC13720 MBC13720T1 NT 101
    Text: Order this document by MBC13720/D MBC13720 The RF Building Block Series SiGe:C Low Noise Amplifier with Bypass Switch The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz multistandard wireless applications. The input and output match is


    Original     		PDF MBC13720/D MBC13720 MBC13720 608-25 sot-363 651 602 SOT-363 transistor motorola 236 MBC13720T1 NT 101

    Untitled

    Abstract: No abstract text available
    Text: Order this document by MBC13720/D MBC13720 The RF Building Block Series SiGe:C Low Noise Amplifier with Bypass Switch The MBC13720 is a high IP3, low noise amplifier designed for 400 MHz to 2.4 GHz multistandard wireless applications. The input and output match is


    Original     		PDF MBC13720/D MBC13720 MBC13720

    2x062h

    Abstract: gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062
    Text: Leshan Radio Company, Ltd. 2008 PRODUCTS CATALOGUE 目 录 CONTENT 开关二极管 SWITCHING DIODES. 1 1. SOD–923 Surface Mount Switching Diodes. 1


    Original     		PDF ZMM22 ZMM24 ZMM27 ZMM43 ZMM47 2x062h gk105 1SS216 GK104 SMD Transistors w06 D20SB80 SMD marking 5As D25SB80 LRB706F-40T1G 2x062

    S1239

    Abstract: rf power amplifier 850 MHZ
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRFIC0915 General Purpose RF Cascode Amplifier The MRFIC0915 is a cost–effective, high isolation cascode silicon monolithic amplifier in the industry standard SOT–143 surface mount package designed for general purpose RF applications. The device is a lower current


    Original     		PDF MRFIC0915 MRFIC0916 S1239 rf power amplifier 850 MHZ

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    MRF947T1 equivalent

    Abstract: mrf9411 285-2 Motorola 581 "Small Signal Amplifiers" MRF9411L MRF947T1 datasheet MRF9411LT1 177.138 MOTOROLA 934
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR941LT1/D The RF Line NPN Silicon Low Noise, High-Frequency Transistors Designed for use in high gain, low noise small–signal amplifiers. This series features excellent broadband linearity and is offered in a variety of packages.


    Original     		PDF MMBR941LT1/D MMBR941 MRF947 MRF9411 MMBR941LT1, MMBR941BLT1 MMBR941 MRF947 MRF9411 MMBR941/D MRF947T1 equivalent 285-2 Motorola 581 "Small Signal Amplifiers" MRF9411L MRF947T1 datasheet MRF9411LT1 177.138 MOTOROLA 934

    NE021 microwave oscillator

    Abstract: 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


    Original     		PDF NE021 NE021 NE02107 OT-23) 34-6393/FAX NE021 microwave oscillator 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    702 P transistor

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Spansion Analog and Microcontroller Products The following document contains information on Spansion analog and microcontroller products. Although the document is marked with the name “Fujitsu”, the company that originally developed the specification, Spansion


    Original     		PDF

    SAA 1006

    Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression


    OCR Scan     		PDF NE021 NE02107 OT-23) SAA 1006 si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K

    JF11

    Abstract: NE02133-T1B
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression


    OCR Scan     		PDF NE021 NE02107 OT-23) NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B JF11

    2SC2570

    Abstract: 2sc2570 transistor NE02132
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,


    OCR Scan     		PDF NE021 NE02107 PACKAGEOUTUNE33 OT-23) b427525 00b5b07 2SC2570 2sc2570 transistor NE02132

    NE021 microwave oscillator

    Abstract: 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec
    Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION_


    OCR Scan     		PDF NE021 NE02107 OT-23) 6393/FAX NE021 microwave oscillator 2SC2570 si 18752 xj-05 transistor 2sc2570 1A12 nec