SPF-5122Z
Abstract: SPF5122Z amplifier 900mhz TAJB104KLRH LL1608-FSR15J
Text: Preliminary SPF-5122Z 500-2500 MHz, GaAs pHEMT Low Noise MMIC Amplifier Product Description The SPF-5122Z is a fully matched, ultra-low noise, high linearity MMIC LNA designed for 500-2500 MHz operation. It delivers 0.8dB noise figure and 38dBm OIP3 at 1900 MHz 5V,90mA . The SPF-5122Z is housed in an
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SPF-5122Z
SPF-5122Z
38dBm
900MHz
900MHz
EDS-105470
SPF5122Z
amplifier 900mhz
TAJB104KLRH
LL1608-FSR15J
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Mitsubishi transistor rf final
Abstract: RA03M4547MD 1538d RA03M4547MD-101 POUT38
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4547MD RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4547MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the
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RA03M4547MD
450-470MHz
38dBm
RA03M4547MD
38dBm
19dBm
-25dBc
35dBm
Mitsubishi transistor rf final
1538d
RA03M4547MD-101
POUT38
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RA03M4043MD-101
Abstract: RA03M4043MD
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4043MD RoHS Compliance , 400-430MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4043MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the
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RA03M4043MD
400-430MHz
38dBm
RA03M4043MD
38dBm
19dBm
-25dBc
35dBm
RA03M4043MD-101
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sbb-4082s
Abstract: rfmd mmic
Text: SBB-4082S 50MHz to 6000MHz InGaP HBT ACTIVE BIAS GAIN BLOCK Package Style: Hermetic, 2-pin, 5.8mmx2.8mm Features Single Fixed 5V Supply Patented Self Bias Circuit and Thermal Design Hermetic Package for High-Reliability Applications OIP3=38dBm at 1150MHz
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SBB-4082S
50MHz
6000MHz
38dBm
1150MHz
19dBm
SBB-4082S
DS101222
rfmd mmic
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Untitled
Abstract: No abstract text available
Text: SGN2933-150D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 180W typ. @ Pin=6.3W (38dBm) •High Efficiency: 50%(typ.) @ Pin=6.3W (38dBm) •Broad Band: 2.9 to 3.3GHz • Impedance Matched Zin/Zout = 50 ohm
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SGN2933-150D-R
38dBm)
SGN2933-150D-R
200msec,
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Untitled
Abstract: No abstract text available
Text: Coaxial Amplifier 50Ω ZHL-4240 Medium High Power 700 to 4200 MHz Features • wideband, 700-4200 MHz • high IP3, +38dBm typ. • high gain, 40 dB min. • medium high power, 28dBm min Applications • communication systems • instrumentation • satellite dist./GPS/PCS
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38dBm
28dBm
ZHL-4240
ZHL-4240
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Untitled
Abstract: No abstract text available
Text: LT1993-2 800MHz Low Distortion, Low Noise Differential Amplifier/ ADC Driver AV = 2V/V DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ 800MHz –3dB Bandwidth Fixed Gain of 2V/V (6dB) Low Distortion: 38dBm OIP3, –70dBc HD3 (70MHz, 2VP-P)
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LT1993-2
800MHz
800MHz
38dBm
70dBc
70MHz,
51dBm
94dBc
10MHz,
70MHz)
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OTPN-MDN-870
Abstract: Part Numbers Indium Gallium Arsenide Phosphide lasers DFB CATV RF TRANSMITTER OPTIC 70 MHZ laser DFB 1550nm 20 mW indium gallium arsenide phosphide
Text: OTPN-MDN-870 - Fiber Optic Mini Digital Node Features/Benefits Smallest full-featured node on the market! CATV 50 to 870MHz forward bandwidth accommodates up to 110 channels on all models. Up to +38dBmV RF output signal over the entire optical input range,
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OTPN-MDN-870
870MHz
38dBmV
-63dB,
-66dB.
OTPN-MDN-870
OTPS-12A-4W
1310nm
Part Numbers
Indium Gallium Arsenide Phosphide lasers
DFB CATV
RF TRANSMITTER OPTIC 70 MHZ
laser DFB 1550nm 20 mW
indium gallium arsenide phosphide
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AM559538UM-3H
Abstract: No abstract text available
Text: AM559538UM-3H Power Amplifier Module 5.5 – 9.5GHz, 24dB, 6W January 2014 Rev0 DESCRIPTION AMCOM’s AM559538UM-3H is a broadband GaAs MMIC Power Amplifier. It has a nominal CW performance of 24dB small signal gain, and 38dBm 6W saturated output power over the 5.5 to 9.5GHz band. The amplifier module has 4
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AM559538UM-3H
AM559538UM-3H
38dBm
38dBm
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RA03M4043MD-101
Abstract: RA03M4043MD "MOSFET Module"
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M4043 RA03M4043M 03M4043MD RoHS Compliance , 400-430MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4043MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the
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RA03M4043M
RA03M4043MD
03M4043
400-430MHz
38dBm
RA03M4043MD
38dBm
19dBm
-25dBc
RA03M4043MD-101
"MOSFET Module"
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MASW-008853
Abstract: MASW-008853-TR3000 M513 MASW-008853-000000 MASW-008853-001SMB
Text: MASW-008853 GaAs SPDT 2.7 V High Power Switch DC - 5.0 GHz Features • • • • • • • • • Rev. V2 Functional Block Diagram Low Voltage Operation: 2.7 V High Power: +38dBm typ P0.1dB High IP3: +56 dBm Low Insertion Loss: 0.25 dB @ 1 GHz High Isolation: 25 dB @ 1 GHz
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MASW-008853
38dBm
MASW-008853
MASW-008853-TR3000
M513
MASW-008853-000000
MASW-008853-001SMB
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Untitled
Abstract: No abstract text available
Text: TQM969001 PCS Duplexer Applications • • • Coverage enhancement repeaters Femtocells Test Mobiles 3-pin 3.8x3.8mm leadless LGA package Product Features • • • • Functional Block Diagram Small form factor of 3.8 X 3.8 mm Max height of 1.2 mm Max Uplink/Downlink peak power of 38dBm
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TQM969001
38dBm
TQM969001
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Untitled
Abstract: No abstract text available
Text: MMIC AP230SO8 Product Features Application • 50 ~ 2000 MHz • GaAs MMIC • 38dBm Output IP3 • 17dB Gain • 21dBm P1dB • Single +5V Supply • CDMA,W-CDMA Medium Power Amplifier • High Linearity Drive Amplifier • 50Ω Telecommunication Systems
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AP230SO8
38dBm
21dBm
AP230SO8
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cavity duplexer
Abstract: SiP LGA
Text: TQM969001 PCS Duplexer Applications • • • Coverage enhancement repeaters Femtocells Test Mobiles 3-pin 3.8x3.8mm leadless LGA package Product Features • • • • Functional Block Diagram Small form factor of 3.8 X 3.8 mm Max height of 1.2 mm Max Uplink/Downlink peak power of 38dBm
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TQM969001
38dBm
TQM969001
cavity duplexer
SiP LGA
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 450-470MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M4547MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the
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450-470MHz
38dBm
RA03M4547MD
38dBm
19dBm
-25dBc
35dBm
450-470MHz
RA03M4547MD-101
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xm0830
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET XM0830SA-BL1301 DS0830SA-01B GaAs IC High Power SPDT Switch for 0.8-3.0GHz Applications GSM, UMTS, AMPS, PCS, DCS, W-CDMA, TD-SCDMA and other RF applications. Features • Positive Voltage Control • Pin0.1dB @+2.6V .38dBm typ.
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XM0830SA-BL1301
DS0830SA-01B
38dBm
12pin
xm0830
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1840g
Abstract: TQM969001
Text: TQM969001 PCS Duplexer Applications • • • Coverage enhancement repeaters Femtocells Test Mobiles 3-pin 3.8x3.8mm leadless LGA package Product Features • • • • Functional Block Diagram Small form factor of 3.8 X 3.8 mm Max height of 1.2 mm Max Uplink/Downlink peak power of 38dBm
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TQM969001
38dBm
TQM969001
1840g
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Untitled
Abstract: No abstract text available
Text: SGN2933-150D-R FEATURES High Voltage - High Power GaN-HEMT for Radar •High Voltage Operation : VDS=50V •High Power : 180W typ. @ Pin=6.3W (38dBm) •High Efficiency: 50%(typ.) @ Pin=6.3W (38dBm) •Broad Band: 2.9 to 3.3GHz • Impedance Matched Zin/Zout = 50 ohm
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SGN2933-150D-R
38dBm)
SGN2933-150D-R
200msec,
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350-400MHZ
Abstract: RA03M3540MD RA03M3540MD-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA03M3540 RA03M3540M 03M3540MD RoHS Compliance , 350-400MHz 38dBm 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA03M3540MD is a 38 dBm output RF MOSFET Amplifier Module for 7.2 volt portable radios that operate in the
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RA03M3540M
RA03M3540MD
03M3540
350-400MHz
38dBm
RA03M3540MD
38dBm
19dBm
-25dBc
RA03M3540MD-101
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Untitled
Abstract: No abstract text available
Text: RF2317 LINEAR CATV AMPLIFIER Package Style: CJ2BAT0 NC 1 16 NC Features DC to 3.0GHz Operation Internally Matched Input and Output 15dB Small Signal Gain 4.8dB Noise Figure at 900MHz 38dBm Output IP3 at 900MHz Single 9V to 12V Power
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RF2317
900MHz
38dBm
RF2317
DS120511
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AN 15525
Abstract: No abstract text available
Text: RF2317 LINEAR CATV AMPLIFIER Package Style: CJ2BAT0 NC 1 Features DC to 3.0GHz Operation Internally Matched Input and Output 15dB Small Signal Gain 4.8dB Noise Figure at 900MHz 38dBm Output IP3 at 900MHz Single 9V to 12V Power Supply
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RF2317
900MHz
38dBm
RF2317
DS120511
AN 15525
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING U nit:m illim eters The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. FEATURES • High output power PidB=38dBm(TYP.)
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MGF0909A
MGF0909A,
38dBm
20dBm
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0909A L, S BAND POWER GaAs FET DESCRIPTION OUTLINE DRAWING Unit:millimeiers The MGF0909A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. y FEATURES • High output power PidB=38dBm(TYP.)
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MGF0909A
MGF0909A,
38dBm
20dBm
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LT 0842
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGF0910A L, S BAND POWER GaAs FET DESCRIPTION The MGF0910A, GaAs FET with an N-channel schottky gale, is designed for use in UHF band amplifiers. FEATURES ♦ Class A operation ♦ High oulpul power PidB=38dBm(TYP) @2.3GHz
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MGF0910A
MGF0910A,
38dBm
LT 0842
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