Untitled
Abstract: No abstract text available
Text: Preliminary BENCHMARQ bq2014 Gas Gauge IC With External Charge Control Features General Description >- Conservative and repeatable m easurem ent of available charge in rechargeable batteries T he bq2014 G as G auge IC is intended for battery-pack or in-sys
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bq2014
bq2014
bq2004
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Untitled
Abstract: No abstract text available
Text: ECN* 10908 -SAFETy ORGANIZATIONS , THIS FILTER HAS BEEN FORMALLY RECOGNIZED, CERTIFIED OR APPROVED BY THE LISTED AGENCY. THEREFORE. ALL TEST/REQUIREMENTS SPECIFIED IN THE LATEST REVISION OF THE FOLLOWING AGENCY STANDARDS
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I20/250
3gXH48
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Untitled
Abstract: No abstract text available
Text: lECN* I APP'D./DATE I TAM 10/12/94 ÏRËV ¡10908 SAFETY ORGANIZATIONCS . RELIABILITY SPECIFICATIONS, STORAGE TEMPERATURE, HUMIDITY. CURRENT OVERLOAD TEST, THIS FILTER HAS BEEN FORMALLY RECOGNIZED, CERTIFIED OR APPROVED BY THE LISTED AGENCY. THEREFORE, ALL TEST/REQUIREMENTS SPECIFIED
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004/sF
37fiF
820Ka
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HIGHWAY 08 20 PIN IC PIN DIAGRAM
Abstract: No abstract text available
Text: Preliminary Data Sheet August 1998 microelectronics group Lucent Technologies Bell Labs Innovations ^ TTSI1K16T 1024-Channel, 16-Highway Time-Slot Interchanger Features Applications • Sixteen full-duplex, serial time-division multiplexed TDM highways.
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TTSI1K16T
1024-Channel,
16-Highway
1024-channel
DS98-290TIC
005005b
0037T31
107obt>
HIGHWAY 08 20 PIN IC PIN DIAGRAM
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Untitled
Abstract: No abstract text available
Text: bq2004E BENCHMARQ Fast Charge IC Features General Description >• Supports fast charge and conditioning of nickel cadmium, nickel-metal hydride and lithium-ion batteries T he bq2004E F a s t C h arg e IC provides comprehensive fast charge control functions together with high
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bq2004E
150-mil
OL-18
0D02c
16-pin
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2n5484
Abstract: 2n5486 2n5484 equivalent 2n5484 jfet 2N5486 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers 2N 5484 2 N5486 N-Channel — Depletion M AXIMUM RATINGS Rating Drain-Gate Voltage Reverse Gate-Source Voltage Drain Current Forward Gate Current Total Device Dissipation @ T q = 25 C Derate above 25°C
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N5486
100-C)
2N5484
2N5486
L3L7255
37fifl
2n5486
2n5484 equivalent
2n5484 jfet
2N5486 equivalent
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Untitled
Abstract: No abstract text available
Text: BENCHMAFÛ MICPOELEC böE D • 137601^ ÜQD131Ö 5TÖ H B E N BENCHMARQ_ faq2201 SRAM Nonvolatile Controller Unit Features General Description >• Power monitoring and switching for 3 volt battery-backup applications The CMOS bq2201 SRAM Non
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QD131Ã
faq2201
bq2201
bq2201
GDG135S
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