DVB-t receiver schematic diagram
Abstract: MURATA GRM15 -V2 dvbt active antenna schematic smd L35 MMCX-S50 MOSFET C65 DVB-T Schematic 4MHz CRYSTAL NDK at41 SMD l35 Transistor C86 SOT323
Text: Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics “Beschaffenheitsgarantie” . With respect to any examples or hints given herein, any
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BB565
BB659C
BF5030W
BB689
TUA6039
DVB-t receiver schematic diagram
MURATA GRM15 -V2
dvbt active antenna schematic
smd L35
MMCX-S50
MOSFET C65
DVB-T Schematic
4MHz CRYSTAL NDK at41
SMD l35 Transistor
C86 SOT323
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RA07M3843
Abstract: RA07M3843M RA07M3843M-101 4 channel rf module
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3843M RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3843M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 378- to
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RA07M3843M
378-430MHz
RA07M3843M
430-MHz
RA07M3843
RA07M3843M-101
4 channel rf module
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Untitled
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS 123456786 1234567865 345678659 RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3843M is a 7-watt RF MOSFET Amplifier Module
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378-430MHz
RA07M3843M
430-MHz
RA07M3843M
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LFB30
Abstract: lfa30 LFSC25N12B0315B LFB30N12B LFSN20N LFSG lfsn30 AT/N0944 LFSB25N1 LFSN25N1
Text: MULTILAYER DEVICES LC FILTERS–BAND PASS, CHIP MULTILAYER LFSN & LFA Series FEATURES • ■ ■ ■ ■ ■ ■ LFSN20N TYPE Small size: see dimensions Metal shielding on inner chip No adjustment required Tape and reel packaging Reflow solderable Frequency request flexibility
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LFSN20N
200MHz
LFSN25N1
LFSN20
LFA30
CG01-J
LFB30
lfa30
LFSC25N12B0315B
LFB30N12B
LFSG
lfsn30
AT/N0944
LFSB25N1
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marking GG
Abstract: RA07M3843M RA07M3843M-101
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3843 RA07M3843M 07M3843M RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3843M is a 7-watt RF MOSFET Amplifier Module
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RA07M3843M
07M3843
378-430MHz
RA07M3843M
430-MHz
marking GG
RA07M3843M-101
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RA60H3847M1
Abstract: No abstract text available
Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to
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RA60H3847M1
378-470MHz
RA60H3847M1
60-watt
470-MHz
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RF MOSFET MODULE
Abstract: RA07M3843M RA07M3843M-101
Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3843M RoHS Compliance , 378-430MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3843M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 378- to
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PDF
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RA07M3843M
378-430MHz
RA07M3843M
430-MHz
RF MOSFET MODULE
RA07M3843M-101
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DVB-t receiver schematic diagram
Abstract: X7356P MOSFET C65 MOSFET TRANSISTOR C65 4N7 CAPACITOR tua6039f-2 DVB-T Schematic MMCX-S50 dvbt active antenna schematic tuner if 36MHz
Text: Published by Infineon Technologies AG 81726 München, Germany Infineon Technologies AG 2007. All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics “Beschaffenheitsgarantie” . With respect to any examples or hints given herein, any
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Original
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PDF
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BB565
BB659C
BF5030W
BB689
TUA6039
DVB-t receiver schematic diagram
X7356P
MOSFET C65
MOSFET TRANSISTOR C65
4N7 CAPACITOR
tua6039f-2
DVB-T Schematic
MMCX-S50
dvbt active antenna schematic
tuner if 36MHz
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Igg22
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H3847M1A RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For Digital Mobile Radio DESCRIPTION The RA60H3847M1A is a 60-watt RF MOSFET Amplifier Module for 12.5-volt digital mobile radios of DMR that operate in the 378- to 470-MHz range.
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RA60H3847M1A
378-470MHz
RA60H3847M1A
60-watt
470-MHz
Igg22
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LFA30
Abstract: 2400-2500MHz LFA30-12B0915B026
Text: MULTILAYER DEVICES LC FILTERS–BAND PASS, CHIP MULTILAYER LFSN & LFA Series FEATURES • ■ ■ ■ ■ ■ ■ LFSN20N TYPE Small size: see dimensions Metal shielding on inner chip No adjustment required Tape and reel packaging Reflow solderable Frequency request flexibility
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200MHz
LFSN20N
LFSN25N1
LFSG25N
LFSL20N
LFSP20N
CG01-H
LFA30
2400-2500MHz
LFA30-12B0915B026
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03RSX-D0.38S-1LFSN
Abstract: Lfa30 2400-2500MHz AT/S3C84E9 AT/N0944
Text: MULTILAYER DEVICES LC FILTERS–BAND PASS, CHIP MULTILAYER LFSN & LFA Series FEATURES • ■ ■ ■ ■ ■ ■ LFSN20N TYPE Small size: see dimensions Metal shielding on inner chip No adjustment required Tape and reel packaging Reflow solderable Frequency request flexibility
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200MHz
LFSN20N
LFSN25N1
LFSG25N
LFSL20N
LFSP20N
CG01-I
03RSX-D0.38S-1LFSN
Lfa30
2400-2500MHz
AT/S3C84E9
AT/N0944
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to 470-MHz range. The battery can be connected directly to the drain of the
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RA60H3847M1
378-470MHz
RA60H3847M1
60-watt
470-MHz
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Untitled
Abstract: No abstract text available
Text: < Silicon RF Power Modules > RA60H3847M1 RoHS Compliance, 378-470MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA60H3847M1 is a 60-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 378- to 470-MHz range. The battery can be connected directly to the drain of the
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RA60H3847M1
378-470MHz
RA60H3847M1
60-watt
470-MHz
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sphe8200
Abstract: SPHE8200A 5.1ch i2s audio amplifier sunplus* DVD 1755MHz YUV411 atapi sunplus YUV422 sunplus sphe8200a
Text: DATA SHEET Y l ia OG t n L e if d NO INC n H o E C S PC HE8200A IS SP E s uDVD SinTgle ChNip DMPEGLAY/V l p C P r o c essor A I n N N u H S UN C E O R S S E U r M o F & Preliminary OCT. 07, 2003 Version 0.2 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice.
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SPCE8200A
SPHE8200A
sphe8200
SPHE8200A
5.1ch i2s audio amplifier
sunplus* DVD
1755MHz
YUV411
atapi
sunplus
YUV422
sunplus sphe8200a
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LFA30-2A1E104M TE
Abstract: No abstract text available
Text: MULTILAYER DEVICES LC FILTERS-BAND PASS, CHIP MULTILAYER m u F fn t n cn £leefrcnic$ LFSN & LFA S e rie s FE A TU R ES • Small size: see dimensions ■ Metal shielding on inner chip ■ No adjustment required ■ Tape and reel packaging ■ Reflow solderable
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OCR Scan
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200MFIz
LFSN25N1
CG01-J
LFSB25N1
LFA30-2A1E104M TE
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LFSC25N12B0315B
Abstract: LFA30-12B0865B010 LFB30N12 LFB30N LFSN20N LFA30 LFSN30N17 LFB30 LFSN30N17C LFB30N12B
Text: MULTILAYER D EVICES LC FILTERS-BAND PASS, CHIP MULTILAYER m u fín ta Aw &ata* ¿* Bccfrc*tts LFSN & LFA Series F EAT U RES • ■ ■ ■ ■ ■ ■ Small size: see dimensions Metal shielding on inner chip No adjustment required Tape and reel packaging
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OCR Scan
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200MHz
LFSN20N
LFSN25N1
LFA30
LFSB25N1
LFSN20
LFSG20N
LFSG25N
LFSL20N
LFSC25N12B0315B
LFA30-12B0865B010
LFB30N12
LFB30N
LFA30
LFSN30N17
LFB30
LFSN30N17C
LFB30N12B
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LFL30-12C1270B060
Abstract: LFA30-16B0866B004 LFJ30-03B2442B084 13b08 LFA30-16B LFA30-13B0801B027 LFJ30 12c02 lfsb25n15b1907b LFB30
Text: MONOLITHIC DEVICES LC FILTER-BAND PASS, CHIP MONOLITHIC m u fin t n //iM M O tc r i / t E to fr o tU i LFSN, LFA & LFJ Serie« FEATURES • ■ ■ ■ ■ ■ ■ LFSN25N1 TYPE LFA30 TYPE Dimensions: mm _ 3.2 ± 0 . 2 5 * ‘ Small size: see dimensions
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200MHz
LFSN25N1
LFA30
LFSC25
LFL30-12C1270B060
LFA30-16B0866B004
LFJ30-03B2442B084
13b08
LFA30-16B
LFA30-13B0801B027
LFJ30
12c02
lfsb25n15b1907b
LFB30
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