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    Untitled

    Abstract: No abstract text available
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise stated Drain-Source or Drain-Gate Voltage 3N163 -40V


    Original     		PDF 3N163, 3N164 3N163 375mW2 OT-143 350mW3 OT-143

    3n163

    Abstract: UNION CARBIDE
    Text: 3N163, 3N164 P-CHANNEL ENHANCEMENT MODE MOSFET FEATURES VERY HIGH INPUT IMPEDANCE HIGH GATE BREAKDOWN ULTRA LOW LEAKAGE FAST SWITCHING LOW CAPACITANCE ABSOLUTE MAXIMUM RATINGS @ 25°C unless otherwise stated Drain-Source or Drain-Gate Voltage 3N163 -40V


    Original     		PDF 3N163, 3N164 3N163 375mW2 OT-143 350mW3 OT-143 3n163 UNION CARBIDE