H-PBGA478
Abstract: PPGA478 processor i7 HPBGA479
Text: Intel Celeron® M Processor 370 1M Cache, 1.50 GHz, 400 MHz FSB Compare Queue (0) Home Intel® Processors English Send Feedback Intel® Celeron® M Processor Page 1 of 2 Type Here to Search Products Intel® Celeron® M Processor 300 Series 370 Intel® Celeron® M Processor 370
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32-bit
04V-1
i7-2630QM/i7-2635QM,
i7-2670QM/i7-2675QM,
i5-2430M/i5-2435M,
i5-2410M/i5-2415M.
ucts/27145/Intel-Celeron-M-Processor-370-
50-GHz.
H-PBGA478
PPGA478
processor i7
HPBGA479
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MIPSZ20120D2R2
Abstract: No abstract text available
Text: User's Guide SLVU312 – June 2009 TPS62230EVM-370 User's Guide This user's guide describes the characteristics, operation, and use of the TPS62230EVM-370 evaluation module EVM . This EVM demonstrates three individual configurations of the Texas Instruments
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SLVU312
TPS62230EVM-370
TPS62230
MIPSZ20120D2R2
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TRANSISTOR 1300
Abstract: L-Band 1200-1400 MHz RT 6010.5 LM 1214-370M 1200 - 1400 MHz, L-Band Applications
Text: 1214-370MR4 1214 – 370M . 370 Watts - 50 Volts, 330 µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-370M is an internally matched, COMMON BASE transistor capable of providing 370 Watts of pulsed RF output power at 330 microseconds pulse width, ten percent duty factor across the band 1200 to
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1214-370MR4
1214-370M
25oC1
1214-370M
TRANSISTOR 1300
L-Band 1200-1400 MHz
RT 6010.5 LM
1200 - 1400 MHz, L-Band Applications
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Untitled
Abstract: No abstract text available
Text: LM97937 www.ti.com SNVS990A – DECEMBER 2013 – REVISED JANUARY 2014 LM97937 Dual 370 MSPS Receiver and Feedback IC With SNRBoost, Bit-Burst, and JESD204B Outputs Check for Samples: LM97937 FEATURES 1 • • • • • • • • • • Conversion Rate: 370 MSPS
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LM97937
SNVS990A
LM97937
JESD204B
14-bit
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Untitled
Abstract: No abstract text available
Text: LM97937 www.ti.com SNVS990A – DECEMBER 2013 – REVISED JANUARY 2014 LM97937 Dual 370 MSPS Receiver and Feedback IC With SNRBoost, Bit-Burst, and JESD204B Outputs Check for Samples: LM97937 FEATURES 1 • • • • • • • • • • Conversion Rate: 370 MSPS
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LM97937
SNVS990A
LM97937
JESD204B
14-bit
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msc diode
Abstract: msc transistor 1214-370V L-Band 1200-1400 MHz 1200 - 1400 MHz, L-Band Applications
Text: 1214-370V R1 . 1214 – 370V 370 Watts - 50 Volts, 330 µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-370V is an internally matched, COMMON BASE transistor capable of providing 370 Watts of pulsed RF output power at 330 microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This
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214-370V
25oC1
msc diode
msc transistor
1214-370V
L-Band 1200-1400 MHz
1200 - 1400 MHz, L-Band Applications
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0A79 diode
Abstract: IC25N040 LTM12C505 WM3B2100 IC25N080 N020A sandisk SD 512 chip floppy CONNECTOR 16 pin mitsumi camera mitsumi sr244w1
Text: Acer TravelMate 370 Series Service Guide Service guide files and updates are available on the ACER/CSD web; for more information, please refer to http://csd.acer.com.tw SERVICE CD PART NO.: VD.T39V1.001 PRINTED IN TAIWAN Revision History Please refer to the table below for the updates made on TravelMate 370 service guide.
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T39V1
0A79 diode
IC25N040
LTM12C505
WM3B2100
IC25N080
N020A
sandisk SD 512
chip floppy
CONNECTOR 16 pin mitsumi camera
mitsumi sr244w1
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2N3442
Abstract: high hfe transistor
Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/370 Devices Qualified Level 2N3442 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current
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MIL-PRF-19500/370
2N3442
O-204AA)
2N3442
high hfe transistor
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TO03
Abstract: 2N3442
Text: TECHNICAL DATA 2N3442 JAN, JANTX, JANTXV MIL-PRF QPL Processed per MIL-PRF-19500/370 DEVICES NPN HIGH-POWER SILICON TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current
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2N3442
MIL-PRF-19500/370
O-204AA)
TO03
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Untitled
Abstract: No abstract text available
Text: ., Una. TELEPHONE: 973 370-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N404A GERMANIUM TRANSISTOR JEDEC TO - 5 CASE MAXIMUM RATINGS { TA = 25° C ) Collector-Base Voltage V CBO Collector-Emitter Voltage ( Punch - through)
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2N404A
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3N187
Abstract: No abstract text available
Text: <Sunt~ 2oncluctoi ^PiocLcti, 20 STERN AVE. SPRINGFIELD. NEW JERSEY 07081 U.SA TELEPHONE: (973 370-2922 (212)227-6006 FAX: (973) 3704860 3N187 Silicon Dual Insulated-Gate Field-Effect Transistor With Integrated Gate-Protection Circuits For Military and Industrial Applications up to 300 MHz
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3N187
3N187
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2SC5548
Abstract: C5548
Text: 2SC5548 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5548 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm • High speed switching: tr = 0.5 µs max , tf = 0.3 µs (max) (IC = 0.8 A) · High collector breakdown voltage: VCEO = 370 V
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2SC5548
2SC5548
C5548
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 370 Devices Qualified Level 2N3442 JAN JANTX JANTXV MAXIMUM RATINGS Ratings Symbol Value Units VCEO VCBO VCER VEBO IB IC 140 160 150 7.0 7.0 10 6.0 117 -55 to +200 Vdc Vdc Vdc Vdc
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MIL-PRF-19500/
2N3442
O-204AA)
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2N3251A
Abstract: No abstract text available
Text: 580 Pleasant St. Watertown, MA 02172 PH: 617 926-0404 FAX: (617) 924-1235 2N3251A Features • • • • 60 Volts 200 mAmps Meets MIL-S-19500/323 Collector-Base Voltage 60V Collector Current: 200 mA Fast Switching 370 nS PNP BIPOLAR TRANSISTOR Maximum Ratings
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2N3251A
MIL-S-19500/323
MSC0281A
2N3251A
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Untitled
Abstract: No abstract text available
Text: •sSemt-CoruLujtot ZPiotbak*, Una. TELEPHONE: 979 370-2992 (2139 227-6008 FAX: (973) 3764060 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA MAXIMUM RATINGS 2N3736 2N3737 2IM3734 Collactor-Emttter Voltage Veep 30 60 Vdc Collactor-Baaa Voltage VCBO VEBO
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2N3736
2N3737
2N3734
2N3735
2IM3734
O-205AD)
2N3734
2N3735
2M3734
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LQ121S1DG43
Abstract: transistor d799 lcd tv parts 21913A CXA-P1212B-WJL d799 D800 sharp lcd 128 240 DF9-41S-1V DF9A-41S-1V
Text: Technical Document LCD Specification LCD Group LQ121S1DG43 LCD Module Product Specification September 2009 800 x 600 SVGA LCD Module featuring 370 nits brightness with 450:1 contrast. Full Specifications Listing. RECORDS OF REVISION LQ121S1DG43 SPEC No. LD-21913A
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LQ121S1DG43
LQ121S1DG43
LD-21913A
LD21913A-1
transistor d799
lcd tv parts
21913A
CXA-P1212B-WJL
d799
D800
sharp lcd 128 240
DF9-41S-1V
DF9A-41S-1V
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LQ121S1LG42
Abstract: No abstract text available
Text: Technical Document LCD Specification LCD Group LQ121S1LG42 LCD Module Product Specification July 2008 800 x 600 SVGA LCD Module featuring 370 nits brightness with 450:1 contrast. Full Specifications Listing. RECORDS OF REVISION LQ121S1LG42 SPEC No. LD-20712A
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LQ121S1LG42
LQ121S1LG42
LD20712A
LD-20712A
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Untitled
Abstract: No abstract text available
Text: SERIES 215 TRANSISTOR SOCKET INTERCONNECTION SPECIALISTS DIA. .370 [9 .4 0 ] OIA. I .100 [2 .5 4 ] 8 PIN 4 PIN 3 PIN - .230 [5 .8 4 ] OIA. .370 [9 .4 0 ] DIA. _L —r .100 [2 .5 4 ] -75 10 PIN CONTACT TYPE S: STANDARD DIP IN SER TIO N FORCE WITHDRAWAL FORCE
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Untitled
Abstract: No abstract text available
Text: J 2 pi r-G (2 p is —• F 1 1 1 h _ L_ _ 1 1 . — _ 1 1 t i —L L DIM MILLIMETER A 9.40 B 6.35 C 9.40 D 20.82 E 14.48 F 6.35 G 0.10 H 2.54 1 1.27 J 3.30 DIA K 3.43 L 2.79 M 1.52 TOL INCHES .61 .370 .18 .250 .61 .370 .25 .820 .13 .570 .13 .250
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55LV2:
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC5548 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5548 SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • : tr = 0.5 /us Max. , tf = 0.3 p.s (Max.) (1(3 = 0.8 A) High Collector Breakdown Voltage : V^EO = 370 V
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2SC5548
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SN75129
Abstract: 1N3064 SN75128
Text: SN75128, SN75129 EIGHT-CHANNEL LINE RECEIVERS SLLS076A- D2305, JANUARY 1977 - REVISED MARCH 1993 N PACKAGE Meets IBM 360/370 I/O Specification TOP VIEW Input Resistance. . . 7 k£2 to 20 kQ 1S/1 S t [ 1 1A [ 2 Output Compatible With TTL Schottky-Clamped Transistors
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SN75128,
SN75129
SLLS076A-
D2305,
SN75128.
SN75129.
SN75128
SN75129,
SN75129
1N3064
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BFQ53
Abstract: transistor w7 634 transistor BFQ52 DOMS477
Text: Product specification Philips Semiconductors 7^3 /-/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL SbE D BFQ53 711002b D O M S 477 370 • PHIN PINNING DESCRIPTION NPN transistor in a TO-72 metal envelope with insulated electrodes and a shield lead connected to the
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BFQ53
711002b
DOMS477
BFQ52.
BFQ53
transistor w7
634 transistor
BFQ52
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2SC5548
Abstract: TOSHIBA TV IC regulator
Text: TOSHIBA 2SC5548 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC5548 Unit in mm SWITCHING REGULATOR APPLICATIONS HIGH VOLTAGE SWITCHING APPLICATIONS DC-DC CONVERTER APPLICATIONS • • • : tr = 0.5 /us Max. , tf = 0.3 /us (Max.) (IC = 0.8 A) High Collector Breakdown Voltage : V^EO = 370 V
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2SC5548
2SC5548
TOSHIBA TV IC regulator
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2N1925
Abstract: No abstract text available
Text: m 2N1925 \ \ GERMANIUM PNP TRANSISTOR PACKAGE STYLE T O - 5 DESCRIPTION: The 2N1925 is Designed for General Purpose Amplifier and Switching Applications. .370 I . 305 r . 335 I •260 .009 .125 T 1.50 MIN. J. MAXIMUM RATINGS 500 mA lc -40 V VcER P diss 225 mW @
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2N1925
2N1925
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