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Text: Advance Technical Information HiPerFETTM Power MOSFETs IXFK 36N60Q IXFX 36N60Q VDSS ID25 = 600 V = 36 A Ω = 165 mΩ Q-CLASS RDS on Single MOSFET Die trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol Test Conditions
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Text: Advance Technical Information HiPerFETTM Power MOSFETs Q-Class IXFN 36N60Q VDSS ID25 RDS on Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr D G Preliminary data sheet Symbol VDSS = 600 V = 36 A Ω = 165 mΩ S Test Conditions
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Text: HiPerFET TM Power MOSFETs 36N60Q VDSS ID25 Q-CLASS RDS on Single MOSFET Die = 600 V = 36 A Ω = 170 mΩ trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C
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