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    Kyocera AVX Components F931C336MBAAJ6

    CAP TANT 33UF 20% 16V 1411
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    DigiKey F931C336MBAAJ6 Digi-Reel 14,600 1
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    F931C336MBAAJ6 Cut Tape 14,600 1
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    F931C336MBAAJ6 Reel 12,000 2,000
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    Mouser Electronics F931C336MBAAJ6 1,609
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    Avnet Abacus F931C336MBAAJ6 Reel 13 Weeks 2,000
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    Kyocera AVX Components F931A336MBA

    CAP TANT 33UF 20% 10V 1411
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    DigiKey F931A336MBA Digi-Reel 6,795 1
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    F931A336MBA Cut Tape 6,795 1
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    F931A336MBA Reel 6,000 2,000
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    Mouser Electronics F931A336MBA 16,944
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    Avnet Abacus F931A336MBA 13 Weeks 2,000
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    Kyocera AVX Components F971A336MBA

    CAP TANT 33UF 20% 10V 1411
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    DigiKey F971A336MBA Reel 2,000 2,000
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    F971A336MBA Digi-Reel 2,000 1
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    F971A336MBA Cut Tape 2,000 1
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    Mouser Electronics F971A336MBA 1,915
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    Kyocera AVX Components F971C336MBA

    CAP TANT 33UF 20% 16V 1411
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    DigiKey F971C336MBA Cut Tape 669 1
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    • 1000 $0.38094
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    F971C336MBA Digi-Reel 669 1
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    Vishay Semiconductors VS-36MB20A

    BRIDGE RECT 1PHASE 200V 35A D-34
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    DigiKey VS-36MB20A Bulk 88 1
    • 1 $8.04
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    Find more 36MB price and stock on Findchips.com

    36MB Datasheets (60)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    36MB International Rectifier SINGLE PHASE BRIDGE Original PDF
    36MB05A International Rectifier 50V Bridge in a D-34A package Original PDF
    36MB05A International Rectifier SINGLE PHASE BRIDGE - Power Modules Original PDF
    36MB05A International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Diode, Single Phase Bridge, 50V, 420V, D-34A Pkg Scan PDF
    36MB05APBF International Rectifier DIODE RECTIFIER BRIDGE SINGLE 50V 35A 4D-34A Original PDF
    36MB1 Unknown Shortform Electronic Component Datasheets Short Form PDF
    36MB100A International Rectifier 1000V Bridge in a D-34A package Original PDF
    36MB100A International Rectifier SINGLE PHASE BRIDGE Power Modules Original PDF
    36MB100A International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Diode, Single Phase Bridge, 1000V, 420A, D-34A Pkg Scan PDF
    36MB100APBF International Rectifier DIODE RECTIFIER BRIDGE SINGLE 1000V 35A 4D-34A Original PDF
    36MB10A International Rectifier SINGLE PHASE BRIDGE Power Modules Original PDF
    36MB10A International Rectifier 100V Bridge in a D-34A package Original PDF
    36MB10A International Rectifier SINGLE PHASE BRIDGE Original PDF
    36MB10-A International Rectifier SINGLE PHASE BRIDGE Original PDF
    36MB10A International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Diode, Single Phase Bridge, 100V, 420A, D-34A Pkg Scan PDF
    36MB120A International Rectifier SINGLE PHASE BRIDGE Power Modules Original PDF
    36MB120A International Rectifier 1200V Bridge in a D-34A package Original PDF
    36MB120-A International Rectifier SINGLE PHASE BRIDGE Original PDF
    36MB120A International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Diode, Single Phase Bridge, 1200V, 420A, D-34A Pkg Scan PDF
    36MB120APBF International Rectifier DIODE RECTIFIER BRIDGE SINGLE 1200V 35A 4D-34A Original PDF

    36MB Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    EDI9G361024C

    Abstract: No abstract text available
    Text: EDI9G361024C 1024K x 36 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 1024K x 36 bit CMOS Static The EDI9G361024C is a high speed 36Mb Static RAM module organized as 1024K words by 36 bits. This module is constructed from nine 1024K x 4 Static RAMs in SOJ packages on an epoxy


    Original     		EDI9G361024C 1024K EDI9G361024C 9G361024C EDI9G361024C15MNC PDF

    GS8342Q36E-200

    Abstract: GS8342Q36E-250 GS8342Q36E-300
    Text: Preliminary GS8342Q08/09/18/36E-300/250/200/167 36Mb SigmaQuad-II Burst of 2 SRAM 165-Bump BGA Commercial Temp Industrial Temp 167 MHz–300 MHz 1.8 V VDD 1.8 V and 1.5 V I/O Features • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package


    Original     		GS8342Q08/09/18/36E-300/250/200/167 165-Bump 165-bump, in-165-Pin GS8342Q08GE-200I 165-Pin GS8342Q08GE-167I GS8342x36E-200T. GS8342Q36E-200 GS8342Q36E-250 GS8342Q36E-300 PDF

    GS832018GT-225I

    Abstract: GS832036GT-250I 36T2 GS832018 GS832018T-166 GS832018T-200 GS832018T-225 GS832018T-250 GS832032 GS832036
    Text: Preliminary GS832018/32/36T-250/225/200/166/150/133 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features cycles can be initiated with either ADSP or ADSC inputs. In


    Original     		GS832018/32/36T-250/225/200/166/150/133 100-Pin GS832018GT-225I GS832036GT-250I 36T2 GS832018 GS832018T-166 GS832018T-200 GS832018T-225 GS832018T-250 GS832032 GS832036 PDF

    Untitled

    Abstract: No abstract text available
    Text: K7P323674C K7P321874C 1Mx36 & 2Mx18 SRAM 36Mb Late Write SRAM Specification 119BGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,


    Original     		K7P323674C K7P321874C 1Mx36 2Mx18 119BGA PDF

    Untitled

    Abstract: No abstract text available
    Text: IS61DDP2B22M18A IS61DDP2B21M36A 2Mx18, 1Mx36 36Mb DDR-IIP Burst 2 CIO Synchronous SRAM (2.0 Cycle Read Latency) FEATURES •                   1Mx36 and 2Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid


    Original     		IS61DDP2B22M18A IS61DDP2B21M36A 2Mx18, 1Mx36 2Mx18 400MHz 333MHz 300MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ 0.13µm Process 36Mb: 2 MEG x 18, 1 MEG x 32/36 PIPELINED ZBT SRAM 36Mb ZBT SRAM MT55L2MY18P, MT55V2MV18P, MT55L1MY32P, MT55V1MV32P, MT55L1MY36P, MT55V1MV36P 3.3V VDD, 3.3V or 2.5V I/O; 2.5V VDD, 2.5V I/O Features Figure 1: 100-Pin TQFP • High frequency and 100 percent bus utilization


    Original     		MT55L2MY18P 165-ball PDF

    BW35

    Abstract: No abstract text available
    Text: ADVANCE‡ 4 MEG X 8, 4 MEG X 9, 2 MEG X 18, 1 MEG X 36 1.8V VDD, HSTL, DDRIIb4 SRAM 36Mb DDRII CIO SRAM 4-WORD BURST MT57W4MH8J MT57W4MH9J MT57W2MH18J MT57W1MH36J FEATURES • • • • • • • • • • • • • • • Figure 1 165-Ball FBGA


    Original     		MT57W1MH36J BW35 PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, QDRb2 SRAM 36Mb QDR SRAM 2-WORD BURST MT54V2MH18A MT54V1MH36A Features Figure 1: 165-Ball FBGA • Separate independent read and write data ports with concurrent transactions • 100 percent bus utilization DDR READ and WRITE


    Original     		MT54V2MH18A PDF

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE‡ Die Revision A 2 MEG x 18, 1 MEG x 36 2.5V VDD, HSTL, Pipelined DDRb2 SRAM 36Mb DDR SRAM 2-Word Burst MT57V2MH18A MT57V1MH36A Features • • • • • • • • • • • • • • • • • Figure 1: 165-Ball FBGA Fast cycle times Pipelined, double data rate operation


    Original     		MT57V2MH18A PDF

    GS8320E18T-133

    Abstract: GS8320E18T-150 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32T-150 GS8320E32T-166 GS8320E32T-200 GS8320E32T-225
    Text: Preliminary GS8320E18/32/36T-xxxV 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Burst mode, subsequent burst addresses are generated internally and are controlled by ADV. The burst address


    Original     		GS8320E18/32/36T-xxxV 100-Pin 8320EV18 8320Exx GS8320E18T-133 GS8320E18T-150 GS8320E18T-166 GS8320E18T-200 GS8320E18T-225 GS8320E18T-250 GS8320E32T-150 GS8320E32T-166 GS8320E32T-200 GS8320E32T-225 PDF

    29050 h

    Abstract: IR 15015
    Text: GS8321E18/32/36E-xxxV 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 165-Bump FP-BGA Commercial Temp Industrial Temp Features Linear Burst Order LBO input. The Burst function need not be used. New addresses can be loaded on every cycle with no


    Original     		GS8321E18/32/36E-xxxV 165-Bump 8321EVxx 29050 h IR 15015 PDF

    GS8322ZV18

    Abstract: GS8322ZV18B GS8322ZV72
    Text: GS8322ZV18 B/E /GS8322ZV36(B/E)/GS8322ZV72(C) 119, 165 & 209 BGA Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM Features 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O Because it is a synchronous device, address, data inputs, and


    Original     		GS8322ZV18 /GS8322ZV36 /GS8322ZV72 8322ZV18 8322ZVxx GS8322ZV18B GS8322ZV72 PDF

    Untitled

    Abstract: No abstract text available
    Text: K7R323684C K7R321884C K7R320984C Preliminary TM 1Mx36, 2Mx18 & 4Mx9 QDR II b4 SRAM 36Mb QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.


    Original     		K7R323684C K7R321884C K7R320984C 1Mx36, 2Mx18 PDF

    GS832118E-133

    Abstract: GS832118E-150 GS832118E-166 GS832118E-200 GS832118E-225 GS832118E-250 GS832132E-250
    Text: GS832118/32/36E-250/225/200/166/150/133 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 165-Bump FP-BGA Commercial Temp Industrial Temp Features • IEEE 1149.1 JTAG-compatible Boundary Scan • 2.5 V or 3.3 V +10%/–10% core power supply • 2.5 V or 3.3 V I/O supply


    Original     		GS832118/32/36E-250/225/200/166/150/133 165-Bump x32/x36) 8321xx GS832118E-133 GS832118E-150 GS832118E-166 GS832118E-200 GS832118E-225 GS832118E-250 GS832132E-250 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8322Z18/36A B/D -400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAM 119 & 165 BGA Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and


    Original     		GS8322Z18/36A 8322ZxxA PDF

    GS8320Z36AGT-200I

    Abstract: No abstract text available
    Text: Preliminary GS8320Z18/36AGT-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and


    Original     		GS8320Z18/36AGT-400/375/333/250/200/150 100-Pin 100-lead 8320ZxxA GS8320Z36AGT-200I PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8342R08/09/18/36BD-400/350/333/300/250 36Mb SigmaDDR-IITM Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • Simultaneous Read and Write SigmaDDR Interface • Common I/O bus • JEDEC-standard pinout and package • Double Data Rate interface


    Original     		GS8342R08/09/18/36BD-400/350/333/300/250 165-Bump 165-bump, PDF

    Untitled

    Abstract: No abstract text available
    Text: GS832218/36/72 B/E/C -xxxV 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs Features 250 MHz–133 MHz 1.8 V or 2.5 V VDD 1.8 V or 2.5 V I/O Flow Through/Pipeline Reads The function of the Data Output register can be controlled by the


    Original     		GS832218/36/72 209-Pin x18/x36 209-bump 8322Vxx PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Preview GS8320ZV18/36T-250/225/200/166/150/133 100-Pin TQFP Commercial Temp Industrial Temp 36Mb Pipelined and Flow Through Synchronous NBT SRAM 250 MHz–133 MHz 1.8 V VDD 1.8 V I/O Features when the device is switched from read to write cycles. • NBT No Bus Turn Around functionality allows zero wait


    Original     		GS8320ZV18/36T-250/225/200/166/150/133 100-Pin 100-lead x32/x36) x32/x36 GS8320ZV18/36T-250/225/200/166/150/133 8320ZV18 PDF

    burst generator

    Abstract: No abstract text available
    Text: Preliminary GS8320Z18/36AGT-400/375/333/250/200/150 400 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 36Mb Pipelined and Flow Through Synchronous NBT SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features Because it is a synchronous device, address, data inputs, and


    Original     		GS8320Z18/36AGT-400/375/333/250/200/150 100-Pin 100-lead 8320ZxxA burst generator PDF

    GS8342DT10BGD-350I

    Abstract: IR receiver TK 19 205
    Text: GS8342DT07/10/19/37BD-450/400/350/333/300 36Mb SigmaQuad-II+TM Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features • 2.0 Clock Latency • Simultaneous Read and Write SigmaQuad Interface • JEDEC-standard pinout and package • Dual Double Data Rate interface


    Original     		GS8342DT07/10/19/37BD-450/400/350/333/300 165-Bump 165-bump, GS8342DTxxBD-300T. GS8342DT10BGD-350I IR receiver TK 19 205 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary GS8342D08/09/18/36BD-400/350/333/300/250 400 MHz–250 MHz 1.8 V VDD 1.8 V and 1.5 V I/O 36Mb SigmaQuad-IITM Burst of 4 SRAM 165-Bump BGA Commercial Temp Industrial Temp Features Clocking and Addressing Schemes • Simultaneous Read and Write SigmaQuad Interface


    Original     		GS8342D08/09/18/36BD-400/350/333/300/250 165-Bump 165-bump, GS8342D36BD-300T. PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Preview GS832218 B/E /GS832236(B/E)/GS832272(C) 2M x 18, 1M x 36, 512K x 72 36Mb S/DCD Sync Burst SRAMs 119-, 165-, & 209-Pin BGA Commercial Temp Industrial Temp Features Flow Through/Pipeline Reads • FT pin for user-configurable flow through or pipeline operation


    Original     		GS832218 /GS832236 /GS832272 209-Pin 133MHz x18/x36 PDF

    Untitled

    Abstract: No abstract text available
    Text: M ay 1997 ^ÉL Micro Linear ML6026 36 Mbps Read Channel Filter/Equalizer GENERAL DESCRIPTION FEATURES The ML6026 is a monolithic analog filter/equalizer intended for hard disk drive read channel applications, capable of handling disk data rates up to 36Mbits/s, with


    OCR Scan     		ML6026 ML6026 36Mbits/s, 350mW. PDF