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    36V5258 Price and Stock

    Mitsubishi Electric MGFC36V525801

    5.2-5.8 GHZ BAND 4W INTERNALLY MATCHED GAAS FET RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
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    ComSIT USA MGFC36V525801 15
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    Mitsubishi Electric MGFC36V525851

    RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET
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    ComSIT USA MGFC36V525851 4
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    36V5258 Datasheets Context Search

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    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F C 36V 5258 5 .2 —5.8G Hz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The M G FC 36V5258 is an internally impedance-matched GaAs power FET especially designed for use in 5.2 ~ 5.8 GHz band amplifiers. The hermetically sealed metal-ceramic


    OCR Scan     		PDF 36V5258