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    36 W BALLAST Search Results

    36 W BALLAST Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    UC3872M Texas Instruments Resonant Lamp Ballast Controller 16-SSOP 0 to 70 Visit Texas Instruments Buy
    UC3872MG4 Texas Instruments Resonant Lamp Ballast Controller 16-SSOP 0 to 70 Visit Texas Instruments Buy
    UC3872MTR Texas Instruments Resonant Lamp Ballast Controller 16-SSOP 0 to 70 Visit Texas Instruments Buy

    36 W BALLAST Datasheets Context Search

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    ST make transistor

    Abstract: DSASW003740
    Text: STEVAL-ILB001V2 36 W - 220 Vac low-cost HF ballast demonstration board using the bipolar solution for PFC Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant Description


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    PDF STEVAL-ILB001V2 STEVAL-ILB001V2 ST make transistor DSASW003740

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-ILB001V2 36 W - 220 Vac low-cost HF ballast demonstration board using the bipolar solution for PFC Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant s ct


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    PDF STEVAL-ILB001V2 STEVAL-ILB001V2

    MAGNETICA

    Abstract: smd diode t8 Schottky electronic ballast for tube light 36 ELECTRONIC BALLAST 4 T8 SCHEMATIC 1N414 diode L6585 1n4007 sod123 1N4007 SOD80C package t8 ballast circuits ELECTRONIC BALLAST 2 LAMP SCHEMATIC
    Text: AN3032 Application note STEVAL-ILB007V1, 2 x 58 W/T8 ballast based on the L6585DE suitable for 2 x 36 W/T8 lamp Introduction This application note describes a demonstration board able to drive 2 x 58 W linear T8 fluorescent tubes. The last section of the document describes the changes that need to be


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    PDF AN3032 STEVAL-ILB007V1, L6585DE MAGNETICA smd diode t8 Schottky electronic ballast for tube light 36 ELECTRONIC BALLAST 4 T8 SCHEMATIC 1N414 diode L6585 1n4007 sod123 1N4007 SOD80C package t8 ballast circuits ELECTRONIC BALLAST 2 LAMP SCHEMATIC

    2.2 uf 50v electrolytic

    Abstract: 1N4153 NEL2001 NEL200101-24
    Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB PACKAGE OUTLINE 01 • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:


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    PDF NEL200101-24 NEL200101-24 24-Hour 2.2 uf 50v electrolytic 1N4153 NEL2001

    1N4153

    Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
    Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:


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    PDF NEL200101-24 NEL200101-24 24-Hour 1N4153 NEL2001 2.2 uf 50v electrolytic

    IEC60081

    Abstract: TRANSISTOR BC 534 PHYCOMP C1206 2222 861 12101 2322 730 61103 9338-123-60115 2222581 UBA2014 2222-581 pin diagram ic 7420
    Text: UM10389 36 W TLD application with UBA2014 Rev. 01 — 2 October 2009 User manual Document information Info Content Keywords UBA2014, Half bridge driver Abstract The UBA2014 integrated half bridge driver IC has been designed for driving electronically ballasted fluorescent lamps.The IC provides the drive


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    PDF UM10389 UBA2014 UBA2014, UBA2014 AN10181 UM10389 IEC60081 TRANSISTOR BC 534 PHYCOMP C1206 2222 861 12101 2322 730 61103 9338-123-60115 2222581 2222-581 pin diagram ic 7420

    Untitled

    Abstract: No abstract text available
    Text: NCP5181BAL36WEVB NCP5181 36 W Ballast Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Description Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this evaluation board user’s manual is to highlight the NCP5181


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    PDF NCP5181BAL36WEVB NCP5181 NCP5181 EVBUM2141/D

    Zener diode 1N4148

    Abstract: GENERIC CAPACITOR generic resistor 5V1 zener NCP5181 capacitor 220nF 400V vogt ELECTRONIC BALLAST 6 LAMP SCHEMATIC vogt r1 power supply ELECTRONIC BALLAST DIAGRAM
    Text: AND8244 A 36 W Ballast Application with the NCP5181 Prepared by: Thierry Sutto ON Semiconductor http://onsemi.com Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this application note is to highlight the NCP5181 driver and not


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    PDF AND8244 NCP5181 NCP5181 AND8240/D Zener diode 1N4148 GENERIC CAPACITOR generic resistor 5V1 zener capacitor 220nF 400V vogt ELECTRONIC BALLAST 6 LAMP SCHEMATIC vogt r1 power supply ELECTRONIC BALLAST DIAGRAM

    zener diode 1n4148

    Abstract: GENERIC CAPACITOR 5V1 zener generic resistor vogt r1 power supply resistor 2W specification of mosfet irf VOGT r6 VOGT r7 10 mf capacitor 400v
    Text: AND8244 A 36 W Ballast Application with the NCP5181 Prepared by: Thierry Sutto ON Semiconductor http://onsemi.com Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this application note is to highly the NCP5181 driver and not to


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    PDF AND8244 NCP5181 NCP5181 AND8240/D zener diode 1n4148 GENERIC CAPACITOR 5V1 zener generic resistor vogt r1 power supply resistor 2W specification of mosfet irf VOGT r6 VOGT r7 10 mf capacitor 400v

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-IHT001V1 Thermostat control demonstration board for refrigerators, based on the ST7Lite39 Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant s ct u d o r P


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    PDF STEVAL-IHT001V1 ST7Lite39 STEVAL-IHT001V1demonstration

    EN50294

    Abstract: t8 ballast circuits ELECTRONIC BALLAST SK Electronic ballast 2x36 2x36w 1X55 220-240V ballast 2x36w tridonic t8 36w electronic ballast
    Text: TC-L, T8 Electronic ballasts Linear lamps and compact lamps PC TCL PRO 36–55 W 220–240 V 50/60/0 Hz, single lamp and twin lamp RoHS 28 40 4,1 40 L D • defined lamp warm start < 1.5 s • constant light output independent of fluctuations in mains voltage


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    PDF 50/60/0Hz, 320VAC, 306VAC 150VAC/176VDC 40kHz EN50294 t8 ballast circuits ELECTRONIC BALLAST SK Electronic ballast 2x36 2x36w 1X55 220-240V ballast 2x36w tridonic t8 36w electronic ballast

    transistor j39

    Abstract: J31 transistor
    Text: T=- an AMP ‘5 cornRaw Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2729-11 OM 2.7 - 2.9 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PDF PH2729-11 5oos41V104KP4 ci7-11- 9-21s transistor j39 J31 transistor

    PH2226-110M

    Abstract: VCC36
    Text: Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-110M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors


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    PDF PH2226-110M PH2226-110M VCC36

    transistor f 255

    Abstract: TRANSISTOR A 225 PH2226-50M VCC36
    Text: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors


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    PDF PH2226-50M transistor f 255 TRANSISTOR A 225 PH2226-50M VCC36

    fluorescent ballasts 2 x 18W

    Abstract: fluorescent ballasts 36w BTA 58 L31 plc 18W lamp BTA 36 L31 pl-s 9w BTA 36 Electronic ballast 11W BTA 16 6008 bta 18
    Text: Electromagnetic ballasts for ‘TL’ fluorescent lamps 230 V/50 Hz, 230 V/50 Hz ‘Low loss’, 240 V/50 Hz Lamp control gear Definition All ‘BTA’ ballasts to be applied in circuits for ‘TL’, ‘TL’D, ‘TL’E or ‘TL’U fluorescent lamps, for


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    PDF

    transistor nec cel

    Abstract: No abstract text available
    Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP Class A -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:


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    PDF NEL200101-24 NEL200101-24 transistor nec cel

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP Class A -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:


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    PDF NEL200101-24 NEL200101-24

    Untitled

    Abstract: No abstract text available
    Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES N E L 2 0 0 1 0 1 -2 4 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 0.7 W 2.0 W LOW IM DISTORTION Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc 0 1.OW PEP (Class AB) HIGH LINEAR GAIN:


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    PDF NEL200101-24 NEL2001 1N4153

    TPV364

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line T P V 36 4 V H F Lin e ar P o w e r T ra n sisto r 10 W — 230 MHz VHF LINEAR POWER TRANSISTOR The TPV364 is a NPN g o ld m e ta llized tra n sisto r using d iffu se d ballast resistors fo r im p ro ve d lin e a rity. This tra n s is to r is designed fo r high p o w e r band ill TV transposers


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    PDF TPV364

    choke vk200

    Abstract: VK200 ferrite choke 2N5102 RCA-2N5102 VK200 INDUCTOR vk200 rf choke VK200 FERRITE inductor vk200 TA2791 vk200 choke
    Text: File No. 279 DQQBÆ] RF P o w er Transisto rs Solid State Division 2N5102 High-Pow er Silicon N -P -N Overlay Transistor For Class C, AM Operation in V H F Circuits F e a tu re s : J E D E C T O -6 0 • 15 W output min. at 1 36 M H z ■ For 24 V aircraft communication


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    PDF 2N5102 RCA-2N5102* 24-volt 92CS-180I9 choke vk200 VK200 ferrite choke 2N5102 RCA-2N5102 VK200 INDUCTOR vk200 rf choke VK200 FERRITE inductor vk200 TA2791 vk200 choke

    J04036

    Abstract: No abstract text available
    Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA J04036 The RF Line N P N S ilic o n V H F P o w e r T ra n sisto r 36 W — 175 M H z RF PO W E R T R A N S IS T O R N P N SIL IC O N . . . designed p rim a rily fo r 12.5 V olt w id e b a n d , large-signal a m p lifie r a p p lica tio n s in


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    PDF J04036 16A-01, VK-211-07 J04036

    2n2222 npn transistor

    Abstract: No abstract text available
    Text: Order th is data sheet by MRF862/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Line MRF862 NPN Silicon RF Power TVansistor M otorola Preferred Device CLASS A 800-960 MHz 36 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier


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    PDF MRF862/D 2PHX33726Q-0 2n2222 npn transistor

    acrian RF POWER TRANSISTOR

    Abstract: ACRIAN acrian inc acrian RF POWER TRANSISTOR cd4792-4 20VoH ZD01 acrian H100-50
    Text: .0182998, A C R I A N A C R IA N 9 Z D - A 14 36— INC DE J O l ö S ' m IN C QD D 14 3L , a ü S IÜ Ü S M iilB S H i!! G EN ER A L 2307 D E S C R IP TIO N 7.0 WATTS - 20 VOLTS 2300 MHfc The 2307 is a common base transistor capable of providing 7 watts of C W RF output power at 2300 MHz.


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    PDF 000143b 500mA 97-D--0 acrian RF POWER TRANSISTOR ACRIAN acrian inc acrian RF POWER TRANSISTOR cd4792-4 20VoH ZD01 acrian H100-50

    Untitled

    Abstract: No abstract text available
    Text: Radar Pulsed Power Transistor, 75W, 300ns Pulse, 10% Duty 2.7 - 3.1 GHz PH2731-75L V 2 .0 0 Features COÜ N I’ N Silicon Microwave Power Transistor C om m on Hase Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors


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    PDF 300ns PH2731-75L PH2731-75L