ST make transistor
Abstract: DSASW003740
Text: STEVAL-ILB001V2 36 W - 220 Vac low-cost HF ballast demonstration board using the bipolar solution for PFC Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant Description
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STEVAL-ILB001V2
STEVAL-ILB001V2
ST make transistor
DSASW003740
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Untitled
Abstract: No abstract text available
Text: STEVAL-ILB001V2 36 W - 220 Vac low-cost HF ballast demonstration board using the bipolar solution for PFC Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant s ct
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STEVAL-ILB001V2
STEVAL-ILB001V2
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MAGNETICA
Abstract: smd diode t8 Schottky electronic ballast for tube light 36 ELECTRONIC BALLAST 4 T8 SCHEMATIC 1N414 diode L6585 1n4007 sod123 1N4007 SOD80C package t8 ballast circuits ELECTRONIC BALLAST 2 LAMP SCHEMATIC
Text: AN3032 Application note STEVAL-ILB007V1, 2 x 58 W/T8 ballast based on the L6585DE suitable for 2 x 36 W/T8 lamp Introduction This application note describes a demonstration board able to drive 2 x 58 W linear T8 fluorescent tubes. The last section of the document describes the changes that need to be
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AN3032
STEVAL-ILB007V1,
L6585DE
MAGNETICA
smd diode t8 Schottky
electronic ballast for tube light 36
ELECTRONIC BALLAST 4 T8 SCHEMATIC
1N414 diode
L6585
1n4007 sod123
1N4007 SOD80C package
t8 ballast circuits
ELECTRONIC BALLAST 2 LAMP SCHEMATIC
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2.2 uf 50v electrolytic
Abstract: 1N4153 NEL2001 NEL200101-24
Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB PACKAGE OUTLINE 01 • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:
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NEL200101-24
NEL200101-24
24-Hour
2.2 uf 50v electrolytic
1N4153
NEL2001
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1N4153
Abstract: NEL2001 NEL200101-24 2.2 uf 50v electrolytic
Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES NEL200101-24 OUTLINE DIMENSIONS Units in mm • HIGH OUTPUT POWER: 0.7 W 2.0 W • LOW IM DISTORTION: Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:
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NEL200101-24
NEL200101-24
24-Hour
1N4153
NEL2001
2.2 uf 50v electrolytic
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IEC60081
Abstract: TRANSISTOR BC 534 PHYCOMP C1206 2222 861 12101 2322 730 61103 9338-123-60115 2222581 UBA2014 2222-581 pin diagram ic 7420
Text: UM10389 36 W TLD application with UBA2014 Rev. 01 — 2 October 2009 User manual Document information Info Content Keywords UBA2014, Half bridge driver Abstract The UBA2014 integrated half bridge driver IC has been designed for driving electronically ballasted fluorescent lamps.The IC provides the drive
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UM10389
UBA2014
UBA2014,
UBA2014
AN10181
UM10389
IEC60081
TRANSISTOR BC 534
PHYCOMP C1206
2222 861 12101
2322 730 61103
9338-123-60115
2222581
2222-581
pin diagram ic 7420
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Untitled
Abstract: No abstract text available
Text: NCP5181BAL36WEVB NCP5181 36 W Ballast Evaluation Board User's Manual http://onsemi.com EVAL BOARD USER’S MANUAL Description Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this evaluation board user’s manual is to highlight the NCP5181
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NCP5181BAL36WEVB
NCP5181
NCP5181
EVBUM2141/D
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Zener diode 1N4148
Abstract: GENERIC CAPACITOR generic resistor 5V1 zener NCP5181 capacitor 220nF 400V vogt ELECTRONIC BALLAST 6 LAMP SCHEMATIC vogt r1 power supply ELECTRONIC BALLAST DIAGRAM
Text: AND8244 A 36 W Ballast Application with the NCP5181 Prepared by: Thierry Sutto ON Semiconductor http://onsemi.com Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this application note is to highlight the NCP5181 driver and not
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AND8244
NCP5181
NCP5181
AND8240/D
Zener diode 1N4148
GENERIC CAPACITOR
generic resistor
5V1 zener
capacitor 220nF 400V
vogt
ELECTRONIC BALLAST 6 LAMP SCHEMATIC
vogt r1 power supply
ELECTRONIC BALLAST DIAGRAM
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zener diode 1n4148
Abstract: GENERIC CAPACITOR 5V1 zener generic resistor vogt r1 power supply resistor 2W specification of mosfet irf VOGT r6 VOGT r7 10 mf capacitor 400v
Text: AND8244 A 36 W Ballast Application with the NCP5181 Prepared by: Thierry Sutto ON Semiconductor http://onsemi.com Detailed Operation This document describes how the NCP5181 driver can be implemented in a ballast application. The scope of this application note is to highly the NCP5181 driver and not to
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AND8244
NCP5181
NCP5181
AND8240/D
zener diode 1n4148
GENERIC CAPACITOR
5V1 zener
generic resistor
vogt r1 power supply
resistor 2W
specification of mosfet irf
VOGT r6
VOGT r7
10 mf capacitor 400v
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Untitled
Abstract: No abstract text available
Text: STEVAL-IHT001V1 Thermostat control demonstration board for refrigerators, based on the ST7Lite39 Data brief Features • Power supply: 220 Vac ■ Power output: 36 W ■ Boost topology ■ Discontinuous-conduction mode ■ RoHS compliant s ct u d o r P
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STEVAL-IHT001V1
ST7Lite39
STEVAL-IHT001V1demonstration
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EN50294
Abstract: t8 ballast circuits ELECTRONIC BALLAST SK Electronic ballast 2x36 2x36w 1X55 220-240V ballast 2x36w tridonic t8 36w electronic ballast
Text: TC-L, T8 Electronic ballasts Linear lamps and compact lamps PC TCL PRO 36–55 W 220–240 V 50/60/0 Hz, single lamp and twin lamp RoHS 28 40 4,1 40 L D • defined lamp warm start < 1.5 s • constant light output independent of fluctuations in mains voltage
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50/60/0Hz,
320VAC,
306VAC
150VAC/176VDC
40kHz
EN50294
t8 ballast circuits
ELECTRONIC BALLAST SK
Electronic ballast 2x36
2x36w
1X55
220-240V
ballast 2x36w
tridonic
t8 36w electronic ballast
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transistor j39
Abstract: J31 transistor
Text: T=- an AMP ‘5 cornRaw Radar Pulsed Power Transistor, IlOW, loops Pulse, 10% Duty PH2729-11 OM 2.7 - 2.9 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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PH2729-11
5oos41V104KP4
ci7-11-
9-21s
transistor j39
J31 transistor
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PH2226-110M
Abstract: VCC36
Text: Radar Pulsed Power Transistor, 110 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-110M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors
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PH2226-110M
PH2226-110M
VCC36
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transistor f 255
Abstract: TRANSISTOR A 225 PH2226-50M VCC36
Text: Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 µS Pulse, 10% Duty 8/21/02 PH2226-50M Rev. 3 Features Q Q Q Q Q Q Q Outline Drawing NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors
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PH2226-50M
transistor f 255
TRANSISTOR A 225
PH2226-50M
VCC36
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fluorescent ballasts 2 x 18W
Abstract: fluorescent ballasts 36w BTA 58 L31 plc 18W lamp BTA 36 L31 pl-s 9w BTA 36 Electronic ballast 11W BTA 16 6008 bta 18
Text: Electromagnetic ballasts for ‘TL’ fluorescent lamps 230 V/50 Hz, 230 V/50 Hz ‘Low loss’, 240 V/50 Hz Lamp control gear Definition All ‘BTA’ ballasts to be applied in circuits for ‘TL’, ‘TL’D, ‘TL’E or ‘TL’U fluorescent lamps, for
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transistor nec cel
Abstract: No abstract text available
Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP Class A -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:
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NEL200101-24
NEL200101-24
transistor nec cel
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Untitled
Abstract: No abstract text available
Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR OUTLINE DIMENSIONS FEATURES_ • HIGH OUTPUT POWER: 0.7 W 2.0 W Class A Class AB • LOW IM DISTORTION: -36 dBc @ 0.5 W PEP Class A -33 dBc @ 1.0 W PEP (Class AB) • HIGH LINEAR GAIN:
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NEL200101-24
NEL200101-24
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Untitled
Abstract: No abstract text available
Text: NPN SILICON BIPOLAR L-BAND POWER TRANSISTOR FEATURES N E L 2 0 0 1 0 1 -2 4 OUTLINE DIMENSIONS Units in mm HIGH OUTPUT POWER: 0.7 W 2.0 W LOW IM DISTORTION Class A Class AB PACKAGE OUTLINE 01 -36 dBc @ 0.5 W PEP (Class A) -33 dBc 0 1.OW PEP (Class AB) HIGH LINEAR GAIN:
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NEL200101-24
NEL2001
1N4153
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TPV364
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line T P V 36 4 V H F Lin e ar P o w e r T ra n sisto r 10 W — 230 MHz VHF LINEAR POWER TRANSISTOR The TPV364 is a NPN g o ld m e ta llized tra n sisto r using d iffu se d ballast resistors fo r im p ro ve d lin e a rity. This tra n s is to r is designed fo r high p o w e r band ill TV transposers
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TPV364
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choke vk200
Abstract: VK200 ferrite choke 2N5102 RCA-2N5102 VK200 INDUCTOR vk200 rf choke VK200 FERRITE inductor vk200 TA2791 vk200 choke
Text: File No. 279 DQQBÆ] RF P o w er Transisto rs Solid State Division 2N5102 High-Pow er Silicon N -P -N Overlay Transistor For Class C, AM Operation in V H F Circuits F e a tu re s : J E D E C T O -6 0 • 15 W output min. at 1 36 M H z ■ For 24 V aircraft communication
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2N5102
RCA-2N5102*
24-volt
92CS-180I9
choke vk200
VK200 ferrite choke
2N5102
RCA-2N5102
VK200 INDUCTOR
vk200 rf choke
VK200 FERRITE
inductor vk200
TA2791
vk200 choke
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J04036
Abstract: No abstract text available
Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA J04036 The RF Line N P N S ilic o n V H F P o w e r T ra n sisto r 36 W — 175 M H z RF PO W E R T R A N S IS T O R N P N SIL IC O N . . . designed p rim a rily fo r 12.5 V olt w id e b a n d , large-signal a m p lifie r a p p lica tio n s in
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J04036
16A-01,
VK-211-07
J04036
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2n2222 npn transistor
Abstract: No abstract text available
Text: Order th is data sheet by MRF862/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA T h e R F Line MRF862 NPN Silicon RF Power TVansistor M otorola Preferred Device CLASS A 800-960 MHz 36 W CW , 24 V NPN SILICON RF POWER TRANSISTOR Designed for 24 Volt UHF large-signal, common emitter, class A linear amplifier
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MRF862/D
2PHX33726Q-0
2n2222 npn transistor
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acrian RF POWER TRANSISTOR
Abstract: ACRIAN acrian inc acrian RF POWER TRANSISTOR cd4792-4 20VoH ZD01 acrian H100-50
Text: .0182998, A C R I A N A C R IA N 9 Z D - A 14 36— INC DE J O l ö S ' m IN C QD D 14 3L , a ü S IÜ Ü S M iilB S H i!! G EN ER A L 2307 D E S C R IP TIO N 7.0 WATTS - 20 VOLTS 2300 MHfc The 2307 is a common base transistor capable of providing 7 watts of C W RF output power at 2300 MHz.
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000143b
500mA
97-D--0
acrian RF POWER TRANSISTOR
ACRIAN
acrian inc
acrian RF POWER TRANSISTOR cd4792-4
20VoH
ZD01
acrian H100-50
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Untitled
Abstract: No abstract text available
Text: Radar Pulsed Power Transistor, 75W, 300ns Pulse, 10% Duty 2.7 - 3.1 GHz PH2731-75L V 2 .0 0 Features COÜ N I’ N Silicon Microwave Power Transistor C om m on Hase Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry Diffused Emitter Ballasting Resistors
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300ns
PH2731-75L
PH2731-75L
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