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    35SL Search Results

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    35SL Price and Stock

    Littelfuse Inc 0402L035SLKR

    PTC RESET FUSE 6V 350MA 0402
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    DigiKey 0402L035SLKR Reel 10,000 10,000
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    Mouser Electronics 0402L035SLKR 13,634
    • 1 $2.09
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    Ozdisan Elektronik 0402L035SLKR
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    Win Source Electronics 0402L035SLKR 40,000
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    Rubycon Corporation 35SLV10M5X6.1

    CAP ALUM 10UF 20% 35V SMD
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    DigiKey 35SLV10M5X6.1 Cut Tape 238 1
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    35SLV10M5X6.1 Digi-Reel 238 1
    • 1 $0.56
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    Mouser Electronics 35SLV10M5X6.1
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    Onlinecomponents.com 35SLV10M5X6.1 5
    • 1 $0.3465
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    Avnet Abacus 35SLV10M5X6.1 1,000
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    Alpha Wire 78135-SL005

    MULTI-PAIR 10COND 22AWG
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    DigiKey 78135-SL005 100 100
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    Alpha Wire 7035-SL005

    HOOK-UP STRND 14AWG SLATE 100'
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    DigiKey 7035-SL005 10 1
    • 1 $214.43
    • 10 $181.363
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    Alpha Wire 77135-SL005

    CABLE 4CON 16AWG SLATE SHLD 100'
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    DigiKey 77135-SL005 10 1
    • 1 $1009.42
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    Find more 35SL price and stock on Findchips.com

    35SL Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    35SLV10M5X6.1 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 10UF 35V 20% SMD Original PDF
    35SLV22M6.3X6.1 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 22UF 35V 20% SMD Original PDF
    35SLV4.7M4X6.1 Rubycon Aluminum Capacitors, Capacitors, CAP ALUM 4.7UF 35V 20% SMD Original PDF

    35SL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TIM5964-35SL

    Abstract: No abstract text available
    Text: TOSHIBA TIM5964-35SL MICROWAVE POWER GaAs FET PRELIMINARY Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 35.0 dBm • High power - P1dB = 45.5 dBm at 5.9 to 6.4 GHz • High efficiency - ηadd = 37% at 5.9 to 6.4 GHz • High gain - G1dB = 8.0 dB at 5.9 to 6.4 GHz


    Original     		PDF TIM5964-35SL 2-16G1B) MW50830196 TIM5964-35SL

    TIM7785-35SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 7.7GHz to 8.5GHz „ HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz


    Original     		PDF TIM7785-35SL TIM7785-35SL

    TIM7785-35SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM7785-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level n HIGH POWER P1dB=45.5dBm at 7.7GHz to 8.5GHz n HIGH GAIN G1dB=6.0dB at 7.7GHz to 8.5GHz


    Original     		PDF TIM7785-35SL TIM7785-35SL

    TIM6472-35SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35.0dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 6.4GHz to 7.2GHz n HIGH GAIN G1dB=8.0dB at 6.4GHz to 7.2GHz


    Original     		PDF TIM6472-35SL TIM6472-35SL

    tim5964-35sla-422

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-35SLA-422 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.85GHz to 6.75GHz n HIGH GAIN G1dB=8.0dB min. at 5.85GHz to 6.75GHz


    Original     		PDF TIM5964-35SLA-422 85GHz 75GHz tim5964-35sla-422

    TIM5964-35SLA

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-35SLA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.4GHz „ HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz


    Original     		PDF TIM5964-35SLA 15GHz TIM5964-35SLA

    TIM5053-35SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5053-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 35dBm Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.0GHz to 5.3GHz n HIGH GAIN G1dB=9.0dB at 5.0GHz to 5.3GHz


    Original     		PDF TIM5053-35SL 35dBm TIM5053-35SL

    TIM5964-35SLA

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM5964-35SLA MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.9GHz to 6.4GHz n HIGH GAIN G1dB=9.0dB at 5.9GHz to 6.4GHz


    Original     		PDF TIM5964-35SLA 15GHz TIM5964-35SLA

    TIM4450-35SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM4450-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level „ HIGH POWER P1dB=45.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz


    Original     		PDF TIM4450-35SL TIM4450-35SL

    TIM6472-35SL

    Abstract: No abstract text available
    Text: MICROWAVE POWER GaAs FET TIM6472-35SL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES „ LOW INTERMODULATION DISTORTION „ HIGH GAIN IM3=-45 dBc at Pout= 35.0dBm G1dB=8.0dB at 6.4GHz to 7.2GHz „ BROADBAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE


    Original     		PDF TIM6472-35SL TIM6472-35SL

    675g

    Abstract: TIM5964-35SLA-422
    Text: MICROWAVE POWER GaAs FET TIM5964-35SLA-422 MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n LOW INTERMODULATION DISTORTION IM3=-45 dBc at Po= 35.0dBm, Single Carrier Level n HIGH POWER P1dB=45.5dBm at 5.85GHz to 6.75GHz n HIGH GAIN G1dB=8.0dB min. at 5.85GHz to 6.75GHz


    Original     		PDF TIM5964-35SLA-422 85GHz 75GHz 675g TIM5964-35SLA-422

    TIM5359-35SL

    Abstract: No abstract text available
    Text: TIM5359-35SL FE A TU R E S : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION rjadd = 38% at 5.3 to 5.9 GHz IM3 = -45dB c at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER G ldB = 8.5 dB at 5.3 to 5 .9 GHz PldB = 45.5dBm at 5.3 to 5.9 GHz ■ BROAD BAND INTERNALLY MATCHED


    OCR Scan     		PDF TIM5359-35SL -45dBc TIM5359-35SL

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA MICROWAVE POWER GaAs FE" MICROWAVE SEMICONDUCTOR TIM5053-35SL TECHNICAL DATA FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH EFFICIENCY IMS » -45dBo at Po » 35.tídBm rjadd a 38« a t S. 0 to 5. 3GHz ■ HIGH POWER ■ HIGH GAIN GldB s 9. OdB at 5.0 to 5.3GHz


    OCR Scan     		PDF TIM5053-35SL -45dBo 5053-35SI TIU5053-35SI

    TIM5964-35SLA

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER G aAs FET M ICRO W AVE SEM IC O N D U C TO R TIM5964-35SLA TECHNICAL DATA a FEATURES : HIGH EFFICIENCY • LOW INTERMODULATION DISTORTION T add = 39% at 5.9 to 6.4GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH POWER HIGH GAIN GldB = 9.0 dB at 5.9 to 6.4GHz


    OCR Scan     		PDF TIM5964-35SLA -45dBc TIM5964-35SLA

    596435SL

    Abstract: No abstract text available
    Text: T O S H IB A MICROWAVE POWER GaAs F ET M IC R O W A V E S E M IC O N D U C T O R TIM 5964-35SLA TEC H N IC A L DATA PRELIMINARY FEATURES : • LO W IN T E R M O D U L A T IO N D IS T O R T IO N ■ HIGH E F F IC IE N C Y T]add = 39% at 5 .9 to 3 .4 G H z IM3 = - 45d 3 c at Po = 3 5 .0 d B m


    OCR Scan     		PDF 5964-35SLA Channet75 2-16G1B) M5984-35SLA TIM5964-35SLA 596435SL

    Untitled

    Abstract: No abstract text available
    Text: June 1997 PRELIMINARY TIM7785-35SL TIM 7785-35SL CHARACTERISTICS SYMBOL Output Power at 1dB CONDITION PidB MIN. TYP. MAX. UNIT 45.0 45.5 — dBm 5.0 6.0 — dB Compression Point Power Gain at 1dB GidB VDS= 10V f=7.7-8.5 GHz Compression Point Drain Current


    OCR Scan     		PDF 7785-35SL TIM7785-35SL 2-16G1B)

    596435SL

    Abstract: 5964-35SLA
    Text: TOSHIBA MICROWAVE POWER G aAs FET M ICRO W AVE SEM IC O N D U C TO R TIM5964-35SLA TECHNICAL DATA a FEATURES : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION T add = 39% at 5.9 to 6.4GHz IM3 = -45d B c at Po = 35.0dBm ■ HIGH POWER ■ HIGH GAIN GldB = 9 .0 dB at 5.9 to 6.4GHz


    OCR Scan     		PDF TIM5964-35SLA 5964-35SLA TIM5964-35SLA 596435SL 5964-35SLA

    Untitled

    Abstract: No abstract text available
    Text: TIM5359-35SL FEATURES : • LOW INTERMODULATION DISTORTION ■ HIGH EFFICIENCY Tjadd = 38% at 5.3 to 5.9GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER GldB =8.5 dB at 5.3 to 5.9GHz PldB = 45.5dBm at 5.3 to 5 9 GHz ■ BROAD BAND INTERNALLY MATCHED


    OCR Scan     		PDF TIM5359-35SL -45dBc 2-16G1B)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs MICROWAVE SEMICONDUCTOR TIM5359 — 35SL TECHNICAL DATA FEATURES : HIGH EFFICIENCY • LOW INTERMODULATION DISTORTION T]add = 3 8 % at IM3 = -45d B c at Po = 35.0dB m to 5.9 GHz 5.3 HIGH GAIN ■ HIGH POWER P 1 dB = 45.5dB m at


    OCR Scan     		PDF TIM5359 2-16G1B) TIM5359-35SL ------------TIM5359-35SL-----------POWER

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-35SLA TECHNICAL DATA FEATURES : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION T|add = 39% at 5.9 to 6.4GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER GldB = 9.0dB at 5.9 to 6.4GHz


    OCR Scan     		PDF -45dBc TIM5964-35SLA -TIM5964-35SLA------------ TIM5964-35SLA

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TIM5964-35SL TECHNICAL DATA FEATURES : • HIGH EFFICIENCY ■ LOW INTERMODULATION DISTORTION T|add = 37% at 5.9 to 6.4GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH POWER GldB = 8.0dB at 5.9 to 6.4GHz


    OCR Scan     		PDF -45dBc TIM5964-35SL TIM5964-35SL

    Untitled

    Abstract: No abstract text available
    Text: TIM5359-35SL FEATURES : • HIGH EF F IC IEN C Y ■ LOW INTERMODULATION DISTORTION T|add = 38% at 5.3 to 5.9 GHz IM3 = -45dBc at Po = 35.0dBm ■ HIGH GAIN ■ HIGH PO W ER G ld B = 8.5 dB at 5.3 to 5.9GHz P ld B = 45.5dBm at 5.3 to 5.9 GHz ■ B R O A D B A N D IN T E R N A LLY M ATCH ED


    OCR Scan     		PDF TIM5359-35SL -45dBc 2-16G1B)

    Untitled

    Abstract: No abstract text available
    Text: June PRELIMINARY TIM7785-35SL TIM7785-35SL CHARACTERISTICS SYMBOL Output Power at 1dB CONDITION PidB MIN. TYP. MAX. UNIT 45.0 45.5 — dBm 5.0 6.0 — dB Compression Point Power Gain at 1dB GidB Compression Point VDS= 10V f=7.7-8.5 GHz Drain Current IDS1 —


    OCR Scan     		PDF TIM7785-35SL 2-16G1B)

    TIM7785-35SL

    Abstract: No abstract text available
    Text: June 1997 PRELIMINARY TIM 7785-35SL T IM 7785-35S L CHARACTERISTICS SYMBOL Output Power at 1dB CONDITION PidB MIN. TYP. MAX. UNIT 45.0 45.5 — dBm 5.0 6.0 — dB — 8.0 Compression Point Power Gain at 1dB GidB Compression Point VDS= 10V f=7.7 -8 .5 GHz Drain Current


    OCR Scan     		PDF TIM7785-35SL M7785-35SL 2-16G1B) TIM7785-35SL