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    355 MOSFET Search Results

    355 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    355 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    D2Pak Package dimensions

    Abstract: MOSFET 355 2X transistor transistor 355 355 data
    Text: Super-D 2Pak Package Outline 4.0 [.157] 3.0 [.119] 10.9 [.429] 9.9 [.390] 9.02 [.355] 8.65 [.341] 0.9 [.035] 0.7 [.028] 3 3 15.2 [.598] 14.2 [.560] 13.0 [.511] 12.0 [.473] 1 9.2 [.362] 9.0 [.355] 2 1 2X 2.54 [.100] 1.2 [.047] 0.8 [.032] 0.25 [.010] 2X B A


    Original     		PDF 5M-1994. D2Pak Package dimensions MOSFET 355 2X transistor transistor 355 355 data

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM5400N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed • Small Footprint DFN3x2-8L package VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V


    Original     		PDF AM5400N DS-AM5400N-2010

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM2370N N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V ID(A) 1.5 1.3 Typical Applications:


    Original     		PDF AM2370N AM2370N

    MOSFET

    Abstract: 2N6845
    Text: 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 U.SA 2N6845 IRFF9120 MECHANICAL DATA Dimensions in mm (inches) P-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 864(034) 9 40 (0 37) 801 (0315) 9,01 (0 355)


    Original     		PDF 2N6845 IRFF9120 -100V 300ms, MOSFET 2N6845

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM20N10-250D N-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 100 PRODUCT SUMMARY rDS(on) (mΩ) 280 @ VGS = 10V 355 @ VGS = 4.5V ID(A) 11 10 Typical Applications:


    Original     		PDF AM20N10-250D AM20N10-250D

    CS16

    Abstract: ctn 4.7 RM-1 datasheet ITO-220 CD16 CS14 CS28 cx sot-353 DFN33 SOT-26 ci
    Text: Packing of IC & MOSFET TUBE PACK Outline Code Outline Packing Code Static electricity bag 靜電袋 Box (PCS) Box # Box Size (mm) CTN # CTN (PCS) CTN Size (mm) G.W. (kgs) N.W. (kgs) CZ TO-220 (50pcs/tube) C0 1,000 2,000 VENDOR 600*166*96 VENDOR 8,000 630*355*233


    Original     		PDF O-220 50pcs/tube) O-220-5L ITO-220-4L ITO-220 O-251 75pcs/tube) CS16 ctn 4.7 RM-1 datasheet ITO-220 CD16 CS14 CS28 cx sot-353 DFN33 SOT-26 ci

    lucent DC-DC POWER MODULE

    Abstract: No abstract text available
    Text: ALH25AF48 N Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V&3.3V Dual Output 100W DC-DC Converter (Rev01) TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44-(0)1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 -1Publishing Date: 20020624


    Original     		PDF ALH25AF48 Rev01) lucent DC-DC POWER MODULE

    k 3531 transistor

    Abstract: No abstract text available
    Text: ALH25AF48N Half-brick Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V Dual Output 100W DC-DC Converter Rev02 TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44- 0 1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 Publishing Date: 20040928


    Original     		PDF ALH25AF48N Rev02 02inch 01inch k 3531 transistor

    k 3531 transistor

    Abstract: No abstract text available
    Text: ALH25AF48 Half-brick Dual Output Series Te c h n i c a l R e f e r e n c e N o t e s 48V Input, 5V/3.3V Output 100 Watt DC-DC Converter TEL: FAX: USA 1-760-930-4600 1-760-930-0698 Europe 44- 0 1384-842-211 44-(0)1384-843-355 Asia 852-2437-9662 852-2402-4426 www.astec.com


    Original     		PDF ALH25AF48 -19www -20www k 3531 transistor

    IXFD21N100F-8F

    Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
    Text: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005


    Original     		PDF IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD180N085-9X IXFD280N085-9Y IXFD75N10-7X IXFD80N10Q-8X IXFD170N10-9X IXFD230N10-9Y IXFD70N15-7X IXFD21N100F-8F IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50

    IXFH32N50Q equivalent

    Abstract: ixfk24n100 IXFD80N20Q-8X IXFN80N50 1672 mos-fet IXFH40N30
    Text: HiPerFETTM Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss trr max. Chip type Chip size dimensions Source ¬ bond wire recommend Equivalent device data sheet Dim. outline No. V Ω


    Original     		PDF IXFD50N20-7X IXFD50N20Q-7X IXFD80N20Q-8X IXFD90N20Q-8Y IXFD120N20-9X IXFD180N20-9Y IXFD60N25Q-8X IXFD100N25-9X IXFD40N30-7X IXFD40N30Q-7X IXFH32N50Q equivalent ixfk24n100 IXFN80N50 1672 mos-fet IXFH40N30

    SSD20N10-250D

    Abstract: MosFET ssd20n10 250d
    Text: SSD20N10-250D N-Ch Enhancement Mode Power MOSFET 11A, 100V, RDS ON 280mΩ Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen free DESCRIPTION TO-252(D-Pack) These miniature surface mount MOSFETs utilize a high cell density trench


    Original     		PDF SSD20N10-250D O-252 11-Aug-2010 SSD20N10-250D MosFET ssd20n10 250d

    Untitled

    Abstract: No abstract text available
    Text: AM20N10-250DE Analog Power N-Channel 100-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and


    Original     		PDF AM20N10-250DE DS-AM20N10-250DE

    4425 8-pin

    Abstract: 4425 mosfet mosfet 4423 NCP4425DWR2 NCP4423 NCP4423DWR2 NCP4423P NCP4424 NCP4424DWR2 NCP4424P
    Text: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,


    Original     		PDF NCP4423, NCP4424, NCP4425 NCP4423/4424/4425 NCP4423/4424/4425. r14525 NCP4423/D 4425 8-pin 4425 mosfet mosfet 4423 NCP4425DWR2 NCP4423 NCP4423DWR2 NCP4423P NCP4424 NCP4424DWR2 NCP4424P

    Untitled

    Abstract: No abstract text available
    Text: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,


    Original     		PDF NCP4423, NCP4424, NCP4425 NCP4423/4424/4425 NCP4423/4424/4425. r14525 NCP4423/D

    mosfet 4423

    Abstract: 4425 8 P-N mosfet NCP4423 NCP4423DWR2 NCP4423P NCP4424 NCP4424DWR2 NCP4424P NCP4425 NCP4425DWR2
    Text: NCP4423, NCP4424, NCP4425 3 A Dual High-Speed MOSFET Drivers The NCP4423/4424/4425 are MOSFET drivers that are capable of giving reliable service in demanding electrical environments. Although primarily intended for driving power MOSFETs, these drivers are well–suited for driving other loads capacitive, resistive,


    Original     		PDF NCP4423, NCP4424, NCP4425 NCP4423/4424/4425 NCP4423/4424/4425. r14525 NPC4423/D mosfet 4423 4425 8 P-N mosfet NCP4423 NCP4423DWR2 NCP4423P NCP4424 NCP4424DWR2 NCP4424P NCP4425 NCP4425DWR2

    4425 mosfet

    Abstract: mosfet 4423 TC4423 TC4424 mosfet 4425 DRIVERS high-speed power MOSFET TC4425 TC4423COE TC4423CPA MOSFET 355
    Text: TC4423 TC4424 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS 2 FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in turn, are improved versions of the earlier TC426/427/428


    Original     		PDF TC4423 TC4424 TC4425 TC4423/4424/4425 TC4426/4427/4428 TC426/427/428 TC4423/ 4425 mosfet mosfet 4423 TC4423 TC4424 mosfet 4425 DRIVERS high-speed power MOSFET TC4425 TC4423COE TC4423CPA MOSFET 355

    4425 8 P-N mosfet

    Abstract: 4425 mosfet DRIVERS high-speed power MOSFET Matching MOSFET Drivers to MOSFETs mosfet 4423 TC4424 transistor mosfet 4425 4425 8-pin TC4425 TC4423
    Text: 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS TC4423 TC4423 TC4424 TC4424 TC4425 TC4425 3A DUAL HIGH-SPEED POWER MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in


    Original     		PDF TC4423 TC4424 TC4425 TC4423/4424/4425 TC4426/4427/4428 TC426/427/428 TC4423/ 4425 8 P-N mosfet 4425 mosfet DRIVERS high-speed power MOSFET Matching MOSFET Drivers to MOSFETs mosfet 4423 TC4424 transistor mosfet 4425 4425 8-pin TC4425 TC4423

    TC4425

    Abstract: TC4423 TC4423COE TC4424 4425 8-pin mosfet 4423 4425 mosfet mm73a
    Text: 3A DUAL HIGH-SPEED MOSFET DRIVERS TC4423 TC4423 TC4424 TC4424 TC4425 TC4425 3A DUAL HIGH-SPEED MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ The TC4423/4424/4425 are higher output current versions of the new TC4426/4427/4428 buffer/drivers, which, in


    Original     		PDF TC4423 TC4424 TC4425 TC4423/4424/4425 TC4426/4427/4428 TC426/427/428 TC4423/ TC4425 TC4423 TC4423COE TC4424 4425 8-pin mosfet 4423 4425 mosfet mm73a

    ultrarf

    Abstract: UPF18045-159 2200PF 470PF 47UF MBD701 MMBTA64 1UF 50V SMT CASE C diode gp 805
    Text: UPF18045-159 45W, 1.88 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.880 GHz. Rated with a typical output power of 50 W PEP for high peak-to-average signals , this device is well suited in


    Original     		PDF UPF18045-159 ultrarf UPF18045-159 2200PF 470PF 47UF MBD701 MMBTA64 1UF 50V SMT CASE C diode gp 805

    AON6240

    Abstract: 40ida
    Text: AON6240 40V N-Channel MOSFET General Description Product Summary VDS The AON6240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of


    Original     		PDF AON6240 AON6240 40ida

    CFL inverter circuit schematic diagram

    Abstract: uv Photocell LF156 HE LF155 LF157 LF257 LF355 LF357 rs 355 integrated circuits LF157A
    Text: r z 7 S G S -T H O M S O N Ê l f i 55/255/355 SERIES J-FET INPUT SINGLE OPERATIONAL AMPLIFIERS • REPLACE HYBRID AND MODULE FET OP AMPs. RUGGED J-FETs ALLOW BLOW-OUT FREE HANDLING COMPARED WITH MOSFET INPUT DEVICES ■ EXCELLENT FOR LOW NOISE APPLICATIONS


    OCR Scan     		PDF LF155/255/355 CFL inverter circuit schematic diagram uv Photocell LF156 HE LF155 LF157 LF257 LF355 LF357 rs 355 integrated circuits LF157A

    NEM0899F01-30

    Abstract: BL 130 301
    Text: VHF Silicon MOSFET for Broadcast/Base Station T Y H Ç tt. ¡m t :fittaafar • iw u y i I V»* : ■m' w h iá * NEM0899F01-301 NEM0995F01-301 new> F011 F011 460 to 860 820 to 960 Poirr P out dBm (W) Gain Efficienc (dBm) (%) 30 AB 50 100 12 30 AB 49.8 95


    OCR Scan     		PDF NEM0899F01-301 NEM0995F01-301 NEL200101-24 MC-7852 MC-7856 50-860M MC-7862 MC-7866 NEM0899F01-30 BL 130 301

    POWER MOSFET 4600

    Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
    Text: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X


    OCR Scan     		PDF 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y IXFD67N10-7X XFD75N10-7X IXFD75N10Q-7X XFD80N100-8X XFD170N10-9X XFD230N10-9Y IXFD70N15-7X POWER MOSFET 4600 MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90