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    25x20

    Abstract: No abstract text available
    Text: Snap-In Aluminum Electrolytic Capacitors MUD Series FEATURES • • • • PCB Mounting, Super low profile Lengths are all 20mm, Down size High CV density Load life of 2,000 hours at 105oC SPECIFICATIONS Item Characteristic Operating Temp Range 160V-250V: -40oC to +105oC


    Original     		PDF 105oC 120Hz, 60V-250V: -40oC 105oC 50V-400V: -25oC 400VDC 25x20

    F8222

    Abstract: No abstract text available
    Text: Snap-In Aluminum Electrolytic Capacitors MWC Series FEATURES • • • • • PCB Mounting, Low profile Compact size High reliability for continuous operation High CV density, high ripple current Load life of 2,000 hours at 85oC SPECIFICATIONS Item Characteristic


    Original     		PDF 120Hz, 50V-400V: -25oC 400VDC 25x40 25x50 30x25 30x30 30x35 F8222

    Untitled

    Abstract: No abstract text available
    Text: 6nap-,n$luminum MH' Series lectrolytic&apacitors   MERITEK FEATURES • PCB Mounting  More compact electronic equipment  Lengths are all 20mm, Down size  Load life of 2,000 hours at 85 C o SPECIFICATIONS Item Characteristic Operating Temp Range


    Original     		PDF 120Hz, 60V-250V: -40oC 50V-400V: -25oC 400VDC 22x20 25x20 30x20

    Untitled

    Abstract: No abstract text available
    Text: Snap-In Aluminum Electrolytic Capacitors MWC Series FEATURES • • • • • PCB Mounting, Low profile Compact size High reliability for continuous operation High CV density, high ripple current Load life of 2,000 hours at 85oC SPECIFICATIONS Item Characteristic


    Original     		PDF 120Hz, 50V-400V: -25oC 400VDC -25OC/Z 25x50 22x25 22x30 22x35

    Untitled

    Abstract: No abstract text available
    Text: Snap-In Aluminum Electrolytic Capacitors MUD Series FEATURES • • • • PCB Mounting, Super low profile Lengths are all 20mm, Down size High CV density Load life of 2,000 hours at 105oC SPECIFICATIONS Item Characteristic Operating Temp Range 160V-250V: -40oC to +105oC


    Original     		PDF 105oC 120Hz, 60V-250V: -40oC 105oC 50V-400V: -25oC 400VDC

    350V400V

    Abstract: No abstract text available
    Text: 6nap-,n$luminum MHD Series lectrolytic&apacitors   MERITEK FEATURES • PCB Mounting  More compact electronic equipment  Lengths are all 20mm, Down size  Load life of 2,000 hours at 85 C o SPECIFICATIONS Item Characteristic Operating Temp Range


    Original     		PDF 120Hz, 60V-250V: -40oC 50V-400V: -25oC 400VDC -25OC/Z 22x20 25x20 350V400V

    IRF331

    Abstract: IRF332 IRF3301 IRF333 IRF330
    Text: -Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 F ile N u m b e r 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF IRF330, IRF331, IRF332, IRF333 50V-400V 92CS-33741 IRF332 IRF333 IRF331 IRF3301 IRF330

    IRF331R

    Abstract: IRF330R ic l00a 250M IRF332R IRF333R
    Text: _ Rugged Power MOSFETs File Number 2011 IRF330R, IRF331R, IRF332R, IRF333R Avalanche Energy Rated N-Channel Power MOSFETs 4.5A a nd 5.5A, 350V-400V ros on = 1 .0 0 and 1 .5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF330R, IRF331R, IRF332R, IRF333R 50V-400V IRF332R IRF333R 92CS-426S9 IRF331R IRF330R ic l00a 250M

    2029 mosfet

    Abstract: ic l00a IRFF330R IRFF331R IRFF332R IRFF333R
    Text: _ Rugged Power MOSFETs File Num ber 2029 IRFF330R, IRFF331R, IRFF332R, IRFF333R Avalanche Energy Rated N-Channel Power MOSFETs 3.0A and 3.5A, 350V-400V rDs on = 1.00 and 1.50 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF330R, IRFF331R, IRFF332R, IRFF333R 50V-400V 2CS-4265S IRFF332R IRFF333R 2029 mosfet ic l00a IRFF330R IRFF331R

    WO2M

    Abstract: IRF330 IRF331 LM 7801 IRF332 IRF333
    Text: □1 J3875081 G E SOLID STATE ¿ Ë 1 3 Û 7 S G 0 1 □□löBGM 7 W 0 1E 18304 Di T " ' 3 £H I - Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 File Number 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode


    OCR Scan     		PDF IRF330, IRF331, IRF332, IRF333 50V-400V IRF332 IRF333 WO2M IRF330 IRF331 LM 7801

    RF730

    Abstract: IRF733 IRF730 IRF731 IRF732 ISF730 JBF731
    Text: Standard Power MOSFETs IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors D 4.5A and 5.5A, 350V-400V rDs on = 1.0 0 and 1.5 f i Features:


    OCR Scan     		PDF IRF730, IRF731, IRF732, IRF733 50V-400V IRF732 IRF733 rf730 RF730 IRF730 IRF731 ISF730 JBF731

    250M

    Abstract: IRF320 IRF321 IRF322 IRF323 1RF322
    Text: 3875081 Standard Power M O S F E Ts DE" • 3Û75001 u it 01 G E SO LI D STATE 7 [1 lö ^aö ü o F ile N u m b e r 1 5 6 9 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field>Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan     		PDF IRF320, IRF321, IRF322, IRF323 50V-400V IRF322 IRF323 S-20V 250M IRF320 IRF321 1RF322

    IRFF312R

    Abstract: IRFF311R IRFF310R IRFF313R
    Text: _ File N u m b er 2032 RuggedPowerMO IRFF310R, IRFF311R, IRFF312R, IRFF313R Avalanche Energy Rated N-Channel Power MOSFETs 1.35A and 1.15A, 350V-400V r0s on = 3.60 and 5.00 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFF310R, IRFF311R, IRFF312R, IRFF313R 50V-400V 2CS-42SH IRFF312R IRFF313R IRFF311R IRFF310R

    IRF720

    Abstract: 1RF721 IRF723 t11g IRF721 IRF722
    Text: 01 3875081 G E SOLID STATE D E ^ 3fl7SGûl ' 0 1E 18364 D D i a3bM 3 ~ T D\ T-39-11 Standard Power M O SFET s IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors


    OCR Scan     		PDF T-39-11 IRF720, IRF721, IRF722, IRF723 50V-400V IRF722 IRF720 1RF721 IRF723 t11g IRF721

    IRF350R

    Abstract: IRF350 IRF351R IRF352R IRF353R transistors bipolar
    Text: _ Rugged Power MOSFETs File Num ber 2006 IRF350R, IRF351R, IRF352R, IRF353R Avalanche Energy Rated N-Channel Power MOSFETs 13A and 15A, 350V-400V ros on = 0 .3 0 and 0 .4 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF350R, IRF351R, IRF352R, IRF353R 50V-400V 92CS-426M IRF352R IRF353R IRF350R IRF350 IRF351R transistors bipolar

    IIRF733R

    Abstract: IRF730R IRF731R IRF732R IRF733R
    Text: Rugged Pow er M O S F E T s IRF730R, IRF731R, IRF732R, IIRF733R File N u m b e r 2019 Avalanche Energy Rated N-Channel Power MOSFETs 4.5A and 5.5A, 350V-400V ros on = 1.00 and 1.5 fl N -C H A N N E L E N H A N C E M E N T M O D E


    OCR Scan     		PDF IRF730R, IRF731R, IRF732R, IIRF733R 50V-400V IRF732R IRF733R 92CS-4J659 IIRF733R IRF730R IRF731R

    IRFD313R

    Abstract: IRFD310R IRFD311R IRFD312R IRF0312
    Text: _ Rugged Power MOSFETs File N u m b er 2039 IRFD310R, IRFD311R, IRFD312R, IRFD313R Avalanche Energy Rated N-Channel Power MOSFETs 0.3A and 0.4A, 350V-400V rDs on = 3.6fi and 5.0Q N-CHANNEL ENHANCEMENT MODE Features: • ■ ■ ■


    OCR Scan     		PDF IRFD310R, IRFD311R, IRFD312R, IRFD313R 50V-400V IRFD312R IRFD313R IRFD310f IRFD310R IRFD311R IRF0312

    IRFP350R

    Abstract: cgel IRFP351R IRFP352R IRFP353R
    Text: Rugged Power MOSFETs F ile N u m b e r 2017 IRFP350R, IRFP351R, IRFP352R, IRFP353R Avalanche Energy Rated N-Channel Power MOSFETs 13A and 15A, 350V-400V rDs on = 0.3Q a nd 0 .4 fi N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRFP350R, IRFP351R, IRFP352R, IRFP353R 50V-400V IRFP352R IRFP353R 426S9 IRFP350R cgel IRFP351R

    irf transistors

    Abstract: irf032 721a GF2D05 IRFD320R IRFD321R IRFD322R IRFD323R 721R IRF 100A
    Text: Rugged Power M O SFETs_ IRFD320R, IRFD321R, IRFD322R, IRFD323R File Number 2040 Avalanche Energy Rated N-Channel Power MOSFETs 0.5A and 0.4A, 350V-400V rDS on = 1.80 and 2.50 N -C H A N N E L E N H A N C E M E N T M O D E Features:


    OCR Scan     		PDF IRFD320R, IRFD321R, IRFD322R, IRFD323R 50V-400V 92CS-Â IRFD322R IFIFD323R irf transistors irf032 721a GF2D05 IRFD320R IRFD321R 721R IRF 100A

    IRF720

    Abstract: IRF722 BRF721 IRF721 IRF723
    Text: -Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.5A and 3.0A, 350V-400V rDs on = 1.8 0 and 2.5 O F e a tu re s:


    OCR Scan     		PDF IRF720, IRF721, IRF722, IRF723 50V-400V IRF722 IRF723 IRF720 BRF721 IRF721

    IRF720R

    Abstract: IRF722R IRF723R IRF721R
    Text: Rugged Power MOSFETs File N u m b er IRF720R, IRF721R IRF722R, IRF723R 1991 Avalanche Energy Rated N-Channel Power MOSFETs 2.5A and 3.0A, 350V-400V rDs on = 1.80 and 2.5fi Features: • Single pulse avalanche energy rated


    OCR Scan     		PDF IRF720R, IRF721R IRF722R, IRF723R 50V-400V IRF721R, IRF722R IRF723F! s-20V IRF720R IRF723R IRF721R

    IRF730

    Abstract: IRF731 IRF733 RF733 transistor IRF730 IRF732 LMIT
    Text: 3875081 G E SOL I D ST ATE T-39-11 □ 1 Standard Pow er M O S F E T s _ IRF730, IRF731, IRF732, IRF733 File Number 1580 Power MOS Field-Effect Transistors N -CH A NN EL E N H A N C E M E N T M ODE N-Channel Enhancement-Mode Power Field-Effect Transistors


    OCR Scan     		PDF 3fl75Dfl T-39-11 IRF730, IRF731, IRF732, IRF733 50V-400V IRF732 IRF730 IRF731 IRF733 RF733 transistor IRF730 LMIT