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    350V MOSFET NCHANNEL Search Results

    350V MOSFET NCHANNEL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    350V MOSFET NCHANNEL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FDPF12N35

    Abstract: No abstract text available
    Text: UniFET FDPF12N35 350V N-Channel MOSFET Features Description • 7.5A, 350V, RDS on = 0.38Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18 nC)


    Original     		PDF FDPF12N35 O-220F FDPF12N35

    350v mosfet nchannel

    Abstract: FDP12N35 FDPF12N35
    Text: UniFET TM FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 12A, 350V, RDS on = 0.38Ω @VGS = 10 V


    Original     		PDF FDP12N35 FDPF12N35 O-220 FDPF12N35 350v mosfet nchannel

    2SK2798

    Abstract: F6F35VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2798 F6F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 350V 6A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2798 F6F35VX2) FTO-220 2SK2798 F6F35VX2

    2sk2799

    Abstract: F10F35VX2 mosfet 350v 10A
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) 350V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small.


    Original     		PDF 2SK2799 F10F35VX2) FTO-220 Aval001 2sk2799 F10F35VX2 mosfet 350v 10A

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		PDF 2SK2799 F10F35VX2) FTO-220

    F10F35VX2

    Abstract: 2SK2799
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2799 F10F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 10A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original     		PDF 2SK2799 F10F35VX2) FTO-220 Singl001 F10F35VX2 2SK2799

    Untitled

    Abstract: No abstract text available
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2798 F6F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 6A FEATURES ●Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ●The static Rds(on) is small.


    Original     		PDF 2SK2798 F6F35VX2) FTO-220

    2SK2798

    Abstract: F6F35VX2
    Text: SHINDENGEN VX-2 Series Power MOSFET 2SK2798 F6F35VX2 N-Channel Enhancement type OUTLINE DIMENSIONS Case : FTO-220 Case E-pack (Unit : mm) 350V 6A FEATURES ● Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. ● The static Rds(on) is small.


    Original     		PDF 2SK2798 F6F35VX2) FTO-220 2SK2798 F6F35VX2

    PLCC-6 5050

    Abstract: P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG
    Text: WEB SITE/OEM PRICE LIST OCTOBER 15, 1999 Supersedes September 1998 Web Site/OEM Price List High Voltage ICs, MOSFETs and Arrays 1 SUPERTEX, INC. TERMS OF SALE information and assistance at the Buyer's expense for the defense of same, and the Buyer shall pay all damages and costs awarded therein against the Seller. In case


    Original     		PDF SA146RS PLCC-6 5050 P-Channel mosfet 400v to220 pj 84 elmwood 2450 MOSFET 400V depletion p channel 240v n-channel depletion mosfet mosfet driver 400v ks 4290 P-Channel Depletion-Mode HT0440LG

    irfp450 mosfet

    Abstract: smd zener diode 5v SOT-23
    Text: HIP1015, HIP1016 TM Data Sheet P RE L I M I NA R Y April 2000 File Number 4778 Power Distribution Controllers Features The HIP1015 and HIP1016 are hot swap power controllers. The HIP1015 is targeted for a +12V bus whereas the HIP1016 is targeted for +5V applications. Each has an


    Original     		PDF HIP1015, HIP1016 HIP1015 HIP1016 irfp450 mosfet smd zener diode 5v SOT-23

    P-Channel Depletion Mosfets

    Abstract: mosfet discrete totem pole drive CIRCUIT HT0440 AN-D26 ultrasound transducer circuit driver HV20220 N-Channel Depletion-Mode MOSFET high voltage relay driver circuit using microprocessor mosfet application solenoid driver analog switch circuit using mosfet VN3205N8
    Text: AN-D26 Application Note High Voltage Isolated MOSFET Driver Features ► ► ► ► ► ► ► ► Switches up to ±400V from ground referenced logic Provides ±700V isolation between outputs No floating power supplies required to bias MOSFETs Operates isolated MOSFETs from 3.15V min., 5.5V max.


    Original     		PDF AN-D26 HT0440 P-Channel Depletion Mosfets mosfet discrete totem pole drive CIRCUIT AN-D26 ultrasound transducer circuit driver HV20220 N-Channel Depletion-Mode MOSFET high voltage relay driver circuit using microprocessor mosfet application solenoid driver analog switch circuit using mosfet VN3205N8

    1W 12V ZENER DIODE

    Abstract: HIP1015 HIP1015CB HIP1015CB-T HIP1016 HIP1016CB HIP1016CB-T TB379 SMD resistor 805 REG IC 48V IN 12V 2A OUT
    Text: HIP1015, HIP1016 TM Data Sheet May 2000 File Number 4778.1 Power Distribution Controllers Features The HIP1015 and HIP1016 are hot swap power controllers. The HIP1015 is targeted for a +12V bus whereas the HIP1016 is targeted for +5V applications. Each has an


    Original     		PDF HIP1015, HIP1016 HIP1015 HIP1016 HIP1015 1W 12V ZENER DIODE HIP1015CB HIP1015CB-T HIP1016CB HIP1016CB-T TB379 SMD resistor 805 REG IC 48V IN 12V 2A OUT

    MPS top marking

    Abstract: LN60A01 LN60A01E D3S34 LN60A01EP MS-001 JESD51-7 LN60 MPS top marking A
    Text: LN60A01 600V, Triple N-Channel MOSFET with Common Gate Control The Future of Analog IC Technology DESCRIPTION FEATURES The LN60A01 is a three channel, 600V NChannel, enhancement mode power FET manufactured in MPS's proprietary, highvoltage DMOS technology.


    Original     		PDF LN60A01 LN60A01 LN60A01EP MPS top marking LN60A01E D3S34 MS-001 JESD51-7 LN60 MPS top marking A

    HT04

    Abstract: mosfet discrete totem pole CIRCUIT ultrasound transducer circuit driver 1mhz analog switch circuit using mosfet 5v opto isolated 2 channel relay board solid state switch ic 120v HV2216
    Text: BACK HT04 Series Applications HT04 Series Application Note AN-D26 High Voltage Isolated MOSFET Driver logic high. The internal clock can be disabled by applying an external clock signal to the CLK pin. This allows the power dissipation and AC characteristics to be tailored to meet specific needs. The HT04 does not require any external power


    Original     		PDF AN-D26 HT0440 TN2540N8 TN2540N8 HT04 mosfet discrete totem pole CIRCUIT ultrasound transducer circuit driver 1mhz analog switch circuit using mosfet 5v opto isolated 2 channel relay board solid state switch ic 120v HV2216

    SHDCG224802

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR SHD224802 SHDCG224802 TECHNICAL DATA DATA SHEET 4203, REV. A Cool-Mos HERMETIC POWER MOSFET FEATURES: • 600 Volt, 0.07 Ohm, 47A MOSFET • • • • Isolated Hermetic Metal Package Low RDS on ; Low Effective Capacitance Ultra Low Gate Charge; very high dv/dt ratings


    Original     		PDF SHD224802 SHDCG224802 SHDCG224802) ID100 SHDCG224802 O-258

    P-Channel Depletion Mosfets

    Abstract: ultrasound transducer circuit driver 1mhz ultrasound transducer circuit driver analog switch circuit using mosfet ultrasound transducer transformer fast high side mosfet driver p channel depletion mosfet ultrasound transducer high power driver p channel mosfet 100v N-Channel 40V MOSFET
    Text: HT04 Series Applications HT04 Series Application Note AN-D26 High Voltage Isolated MOSFET Driver logic high. The internal clock can be disabled by applying an external clock signal to the CLK pin. This allows the power dissipation and AC characteristics to be tailored to meet specific needs. The HT04 does not require any external power


    Original     		PDF AN-D26 HT0440 TN2540N8 P-Channel Depletion Mosfets ultrasound transducer circuit driver 1mhz ultrasound transducer circuit driver analog switch circuit using mosfet ultrasound transducer transformer fast high side mosfet driver p channel depletion mosfet ultrasound transducer high power driver p channel mosfet 100v N-Channel 40V MOSFET

    mosfet discrete totem pole drive CIRCUIT

    Abstract: analog switch circuit using mosfet 1mhz ultrasound transducer circuit driver HT04 VN3205N8 solid state switch ic 120v mosfet discrete totem pole CIRCUIT HT0440 HV2216 LND150N8
    Text: HT04 Series Application Note AN-D26 3 High Voltage Isolated MOSFET Driver high. The internal clock can be disabled by applying an external clock signal to the CLK pin. This allows the power dissipation and AC characteristics to be tailored to meet specific needs. The


    Original     		PDF AN-D26 HT0440 clo-83 TN2540N8 mosfet discrete totem pole drive CIRCUIT analog switch circuit using mosfet 1mhz ultrasound transducer circuit driver HT04 VN3205N8 solid state switch ic 120v mosfet discrete totem pole CIRCUIT HV2216 LND150N8

    nec 2401 optocoupler

    Abstract: PS2801-1 nec 8508 zener zener smd diode 3.3v 1w HIP1015 HIP1015ACB HIP1015CB HIP1016 HIP1016ACB HIP1016CB
    Text: HIP1015, HIP1015A, HIP1016, HIP1016A TM Data Sheet May 2001 File Number 4778.2 Power Distribution Controllers Features The HIP1015 and HIP1016 families are hot swap power controllers. The HIP1015 family is targeted for +12V control applications whereas the HIP1016 family is targeted for +5V


    Original     		PDF HIP1015, HIP1015A, HIP1016, HIP1016A HIP1015 HIP1016 nec 2401 optocoupler PS2801-1 nec 8508 zener zener smd diode 3.3v 1w HIP1015ACB HIP1015CB HIP1016ACB HIP1016CB

    P-Channel Depletion Mosfets

    Abstract: analog switch circuit using mosfet to control 5v opto isolated 2 channel relay board fast high side mosfet driver N-Channel Depletion-Mode MOSFET high voltage HT0440 TN2524N8 mosfet driver to drive 50V VDD h-bridge mosfet mosfet discrete totem pole drive CIRCUIT
    Text: HT04 Series Application Note AN-D26 High Voltage Isolated MOSFET Driver The Supertex HT0440 is a dual high voltage isolated driver utilizing Supertex’s proprietary HVCMOS technology. It is designed to drive discrete MOSFETs configured as bi-directional or unidirectional switches. It can drive N-channel MOSFETs as


    Original     		PDF AN-D26 HT0440 TN2540N8 P-Channel Depletion Mosfets analog switch circuit using mosfet to control 5v opto isolated 2 channel relay board fast high side mosfet driver N-Channel Depletion-Mode MOSFET high voltage TN2524N8 mosfet driver to drive 50V VDD h-bridge mosfet mosfet discrete totem pole drive CIRCUIT

    2SK3673-01MR equivalent

    Abstract: MOSFET 700V 10A 2SK3673
    Text: 2SK3673-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings [mm] TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators


    Original     		PDF 2SK3673-01MR O-220F 2SK3673-01MR equivalent MOSFET 700V 10A 2SK3673

    Untitled

    Abstract: No abstract text available
    Text: APT5 0 1 0 JV R U 3 A dvanced P o w er Te c h n o lo g y ' soov 44A 0.100a POWER MOSV Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MOSFETs, This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF OT-227 APT5010JVRU3 OT-227

    mosfet 350v 30a

    Abstract: No abstract text available
    Text: APT5010JVRU2 A D VA N C ED P o w er Te c h n o lo g y ' soov 44A 0.100a POWER MOSV Power MOS V™ is a new generation of high voltage N-Channel enhancement mode power MO SFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT5010JVRU2 OT-227 APT5010JVRU2 OT-227 mosfet 350v 30a

    Untitled

    Abstract: No abstract text available
    Text: APT5010JVRU3 A dvanced P o w er Te c h n o l o g y 500V 44A 0.100n POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT5010JVRU3 OT-227 OT-227

    Untitled

    Abstract: No abstract text available
    Text: APT5010JVRU2 A dvanced P o w er Te c h n o l o g y 500V 44A 0.100Q POWER MOSV Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V™


    OCR Scan     		PDF APT5010JVRU2 OT-227 OT-227