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    35 W 960 MHZ RF POWER TRANSISTOR NPN Search Results

    35 W 960 MHZ RF POWER TRANSISTOR NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LBAA0QB1SJ-295 Murata Manufacturing Co Ltd SX1262 MODULE WITH OPEN MCU Visit Murata Manufacturing Co Ltd
    GRM-KIT-OVER100-DE-D Murata Manufacturing Co Ltd 0805-1210 over100uF Cap Kit Visit Murata Manufacturing Co Ltd
    LBUA5QJ2AB-828 Murata Manufacturing Co Ltd QORVO UWB MODULE Visit Murata Manufacturing Co Ltd
    LXMSJZNCMH-225 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd
    LXMS21NCMH-230 Murata Manufacturing Co Ltd Ultra small RAIN RFID chip tag Visit Murata Manufacturing Co Ltd

    35 W 960 MHZ RF POWER TRANSISTOR NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    35 W 960 MHz RF POWER TRANSISTOR NPN

    Abstract: TP3034 2779, transistor transistor j8 j8 er capacitor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3034 The RF Line NPN Silicon RF Power Transistor The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and


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    TP3034 TP3034 35 W 960 MHz RF POWER TRANSISTOR NPN 2779, transistor transistor j8 j8 er capacitor PDF

    35 W 960 MHz RF POWER TRANSISTOR NPN

    Abstract: TRANSISTOR 618 J1 TRANSISTOR 1090 35 W 960 MHz MAPRST0912-350 1215 transistor j08
    Text: MAPRST0912-350 AVIONICS PULSED POWER TRANSISTOR 350 Watts, 960 - 1215 MHz, 10 s Pulse Width, 10% Duty Cycle Preliminary Specification, Rev 02/03/2004 FEATURES OUTLINE DRAWING ∗ NPN Silicon Microwave Power Transistor ∗ Common Base Configuration ∗ Broadband Class C Operation


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    MAPRST0912-350 35 W 960 MHz RF POWER TRANSISTOR NPN TRANSISTOR 618 J1 TRANSISTOR 1090 35 W 960 MHz MAPRST0912-350 1215 transistor j08 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP3034/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3034 The TP3034 is designed for 960 MHz cellular radio base stations in both analog and digital applications. It incoporates high value emitter ballast


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    TP3034/D TP3034 TP3034 TP3034/D* PDF

    CW 7805

    Abstract: CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd SMD DIODE gp 317 smd-transistor DATA BOOK
    Text: MOTOROLA Order this document by TP3006/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3006 The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and


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    TP3006/D TP3006 TP3006 TP3006/D* CW 7805 CW 7805 regulator regulator CW 7805 TRANSISTOR CW 7805 5Bp smd transistor data smd-transistor 5bp 5Bp smd 7805 smd SMD DIODE gp 317 smd-transistor DATA BOOK PDF

    motorola rf Power Transistor Data Book

    Abstract: Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.


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    MRF6409 MRF6409 DL110/D) motorola rf Power Transistor Data Book Motorola Power Transistor Data Book BAS16 transistor transistor f1 j39 motorola rf device data book PDF

    Motorola transistor 9410

    Abstract: 91 c6 bd135 equivalent icer capacitor motorola 1N4148 TP3032 1N4148 BD135 NT 407 F TRANSISTOR
    Text: MOTOROLA Order this document by TP3032/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3032 The TP3032 is designed for 26 volts, common emitter, 960 MHz base station amplifiers, for use in analog and digital systems. • Specified 26 Volts, 960 MHz Characteristics


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    TP3032/D TP3032 TP3032 TP3032/D* Motorola transistor 9410 91 c6 bd135 equivalent icer capacitor motorola 1N4148 1N4148 BD135 NT 407 F TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics Output Power = 50 Watts


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    MRF6414 MRF6414 DL110/D) PDF

    CW 7805 regulator

    Abstract: TRANSISTOR CW 7805 regulator CW 7805 cw 7805 lc 7805 transistor SMD J9 GL 7805 REGULATOR IC 7805 SMD lu 7805 7805 voltage regulator IC
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TP3006 The RF Line NPN Silicon RF Power Transistor The TP3006 is designed for cellular radio base station amplifiers up to 960 MHz. It incorporates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness. The TP3006 also features


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    TP3006 TP3006 CW 7805 regulator TRANSISTOR CW 7805 regulator CW 7805 cw 7805 lc 7805 transistor SMD J9 GL 7805 REGULATOR IC 7805 SMD lu 7805 7805 voltage regulator IC PDF

    J103 transistor 3 pin

    Abstract: J103 transistor C6B3 UT-85-M17
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897 Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 – 970 MHz.


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    MRF897 J103 transistor 3 pin J103 transistor C6B3 UT-85-M17 PDF

    smd transistor l32

    Abstract: SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27
    Text: Philips Semiconductors Product specification UHF push-pull power transistor BLV945B FEATURES DESCRIPTION • Double internal input matching for easy matching and high gain Two NPN silicon planar epitaxial transistors in push-pull configuration, intended for linear common emitter


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    BLV945B OT324 OT324 7110fl2fc. OT324. ocn23ia smd transistor l32 SMD Transistor SAs transistor SMD t30 sas smd transistor SMD l32 Transistor SMD L31 SMD CAPACITOR L29 SMD Transistor t30 SMD electrolytic capacitor SMD CAPACITOR L27 PDF

    Untitled

    Abstract: No abstract text available
    Text: ERICSSON ^ PTB 20219 70 Watts, 925 - 960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and


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    G-200, PDF

    20219

    Abstract: 35 W 960 MHz RF POWER TRANSISTOR NPN
    Text: e PTB 20219 70 Watts, 925–960 MHz Cellular Radio RF Power Transistor Description The 20219 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation across the 925 to 960 MHz frequency band. It is rated at 70 watts minimum output power for both CW and


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    G-200, 1-877-GOLDMOS 1301-PTB 20219 35 W 960 MHz RF POWER TRANSISTOR NPN PDF

    Motorola Power Transistor Data Book

    Abstract: BAS16 MRF6409 DL110 motorola rf Power Transistor NT 407 F TRANSISTOR
    Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high


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    MRF6409/D MRF6409 MRF6409 Motorola Power Transistor Data Book BAS16 DL110 motorola rf Power Transistor NT 407 F TRANSISTOR PDF

    NT 407 F power transistor

    Abstract: DL110
    Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high


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    MRF6409/D MRF6409 MRF6409 MRF6409/D NT 407 F power transistor DL110 PDF

    MRF6409

    Abstract: BAS16 motorola rf Power Transistor
    Text: MOTOROLA Order this document by MRF6409/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The MRF6409 is designed for GSM base stations applications. It incorporates high value emitter ballast resistors, gold metallizations and offers a high


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    MRF6409/D MRF6409 MRF6409 BAS16 motorola rf Power Transistor PDF

    motorola rf device

    Abstract: DL110 BAS16 transistor DL1100 Motorola Power Transistor Data Book
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF6409 The M RF6409 is designed for GSM base stations applications. It incorpo­ rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.


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    MRF6409 MRF6409 DL110/0) DL110/D) motorola rf device DL110 BAS16 transistor DL1100 Motorola Power Transistor Data Book PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 – 970 MHz.


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    MRF897R MRF897R DL110/D) PDF

    DL110

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Pow er Transistor The MRF6409 is designed for GSM base stations applications. It incorpo­ rates high value emitter ballast resistors, gold metallizations and offers a high degree of reliability and ruggedness.


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    MRF6409 DL110/D) DL110 PDF

    transistor rf m 1104

    Abstract: DL110 015 j47 1N4007 BD135 MRF6414
    Text: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics


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    MRF6414/D MRF6414 MRF6414 transistor rf m 1104 DL110 015 j47 1N4007 BD135 PDF

    15 w RF POWER TRANSISTOR NPN

    Abstract: transistor rf m 1104
    Text: MOTOROLA Order this document by MRF6414/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF6414 NPN Silicon RF Power Transistor The MRF6414 is designed for 26 volt UHF large signal, common emitter, class AB linear amplifier applications. • Specified 26 Volt, 960 MHz Characteristics


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    MRF6414/D MRF6414 MRF6414 MRF6414/D 15 w RF POWER TRANSISTOR NPN transistor rf m 1104 PDF

    BLV97CE

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BLV97CE UHF power transistor Product specification March 1993 Philips Semiconductors Product specification UHF power transistor BLV97CE FEATURES DESCRIPTION • Internal input matching to achieve high power gain NPN silicon planar epitaxial transistor in a SOT171


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    BLV97CE OT171 BLV97CE PDF

    J297

    Abstract: balun 300 75 ohm transistor bd136 150 watts power amplifier layout
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM / AM equipment operating in the range 800 – 960 MHz.


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    MRF899 J297 balun 300 75 ohm transistor bd136 150 watts power amplifier layout PDF

    TP3007S

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP3007S/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor TP3007S The TP3007S is designed for 24 volts common emitter base station amplifiers, operating up to 1 GHz bandwidth. It has been specifically designed


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    TP3007S/D TP3007S TP3007S TP3007S/D* PDF

    Untitled

    Abstract: No abstract text available
    Text: e PTB 20220 15 Watts, 915–960 MHz Cellular Radio RF Power Transistor Description The 20220 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 915 to 960 MHz frequency band. Rated at 15 watts minimum output power for PEP applications,


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    1-877-GOLDMOS 1301-PTB PDF