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    35 CFY Search Results

    35 CFY Datasheets Context Search

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    GaAs FET cfy 19

    Abstract: CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19
    Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


    Original     		PDF Q62702-F1394 Q62702-F1393 GSO05553 GaAs FET cfy 19 CFY 35-20 F1393 f1394 GSO05553 Q62702-F1393 Q62702-F1394 smd code marking 814 cfy 19

    GSO05553

    Abstract: Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65
    Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


    Original     		PDF Q62702-F1393 Q62702-F1394 GSO05553 GSO05553 Q62702-F1393 Q62702-F1394 smd 3520 CFY 35-23 GaAs FET cfy 14 CFY 19 CFY 65

    SMD MARKING CODE 901

    Abstract: CFY 19 CFY 10 GaAs FET cfy 14
    Text: GaAs FET CFY 35 Data Sheet • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel CFY 35-20 NA Q62702-F1393


    Original     		PDF Q62702-F1393 Q62702-F1394 GSO05553 SMD MARKING CODE 901 CFY 19 CFY 10 GaAs FET cfy 14

    d-10

    Abstract: gaas fet marking a GaAs FET cfy 19 CFY 35-20 F1393 f1394 marking code 5 Q62702-F1393 Q62702-F1394 siemens gaas fet
    Text: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-F1393 Q62702-F1394 d-10 gaas fet marking a GaAs FET cfy 19 CFY 35-20 F1393 f1394 marking code 5 Q62702-F1393 Q62702-F1394 siemens gaas fet

    GaAs FET cfy 14

    Abstract: GaAs FET cfy 19 CFY 10 marking K gaas fet Ga FET marking k F1393 Q62702-F1393 Q62702-F1394 f5035 cfy 19
    Text: CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-F1393 Q62702-F1394 GaAs FET cfy 14 GaAs FET cfy 19 CFY 10 marking K gaas fet Ga FET marking k F1393 Q62702-F1393 Q62702-F1394 f5035 cfy 19

    Untitled

    Abstract: No abstract text available
    Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high


    Original     		PDF CFY35 CFY35

    transistor s2p

    Abstract: design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10 CFY35
    Text: 15 GHz GaAs-FET Buffered Oscillator Application Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. In addition a spacer for a high resonator quality-factor is added. The design goals for this oscillator are high


    Original     		PDF CFY35 CFY35 transistor s2p design DRO TRANSISTOR C 2 SUB MA 2129 design dielectric resonator oscillator s2p 100 Dielectric Resonator Oscillator DRO CFY 18 CFY 10

    GM15

    Abstract: 137 marking Micro-X
    Text: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power


    Original     		PDF CFY25 CFY25-P CFY25-23 CFY25-23P CFY25-20 CFY25-20P CFY25-nnl: QS9000 GM15 137 marking Micro-X

    marking code s22

    Abstract: zo 607 MA CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P
    Text: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power


    Original     		PDF CFY25 CFY25-P CFY25-23 CFY25-23P CFY25-20 CFY25-20P CFY25-nnl: QS9000 marking code s22 zo 607 MA CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P

    35 micro-X Package MARKING CODE Q

    Abstract: transistor equivalent book FOR D 1047 zo 607 MA marking code s22 microwave transistor siemens transistor GaAS marking 576 zo 607 CFY25 CFY25-20 CFY25-20P
    Text: CFY25 HiRel X-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power


    Original     		PDF CFY25 CFY25-P CFY25-23 CFY25-23P CFY25-20 CFY25-20P CFY25-nnl: QS9000 35 micro-X Package MARKING CODE Q transistor equivalent book FOR D 1047 zo 607 MA marking code s22 microwave transistor siemens transistor GaAS marking 576 zo 607 CFY25 CFY25-20 CFY25-20P

    35 micro-X Package MARKING CODE Q

    Abstract: CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P HEMT marking P CFY67-08P P
    Text: CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package


    Original     		PDF CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 QS9000 35 micro-X Package MARKING CODE Q CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P HEMT marking P CFY67-08P P

    35 micro-X 20ghz gaas

    Abstract: marking K "micro x" transistor GaAS marking 576 CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P 133 marking Micro-X
    Text: CFY25. HiRel X-Band GaAs General Purpose MESFET • HiRel discrete and Microwave semiconductor • For professional pre- and driver- amplifiers • For frequencies from 500MHz to 20GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power


    Original     		PDF CFY25. 500MHz 20GHz CFY25-20 CFY25-20P CFY25-23 CFY25-23P 35 micro-X 20ghz gaas marking K "micro x" transistor GaAS marking 576 CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23P CFY25-P 133 marking Micro-X

    GaAs FET cfy 19

    Abstract: S11 SIEMENS z0 607 MA 7a
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters 4 ^ ESD: V5005553 Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20


    OCR Scan     		PDF V5005553 Q62702-F1393 Q62702-F1394 GaAs FET cfy 19 S11 SIEMENS z0 607 MA 7a

    3tb 50 siemens

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20 NA Q62702-F1393


    OCR Scan     		PDF Q62702-F1393 Q62702-F1394 535bD5 D155EÃ 3tb 50 siemens

    GaAs FET cfy 14

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Datasheet * Low noise * High gain * For iow-noise front end amplifiers * For DBS down converters ESO: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Pin Configuration


    OCR Scan     		PDF Q62702-F1393 Q62702-F1394 GaAs FET cfy 14

    TRL15

    Abstract: cfy transistor CFY 18 heft DRO components
    Text: In fineon fschncio^iej 15 GHz G aAs-FE T B u ffe re d O s c illa to r A p p lic a tio n Note No. 010 A buffered stable oscillator has been developed using a parallel feedback circuit, two CFY 35 GaAs-field effect transistors and a dielectric resonator. !n addition a spacer for


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS CFY 35 GaAs FET Features • Low noise • High gain • Fo r lo w -noise front end am plifiers • Fo r D B S dow n co nverters 5:1 E S D : E le c tro sta tic d is c h a rg e se n sitive de v ice , o b se rv e handling pre ca utio ns! Type Marking


    OCR Scan     		PDF

    peo 111

    Abstract: NJU3501 PHY10
    Text: • •• ••• ••• • • • •• oogpg? $gPS*>H> j 33J0 35 m > + Üiírd^'í Vf ^ I^ #EE> 0 S « äj«»5 H ] s 0 » K', * ; ia> H lïS s f - S - f ÿ ooÿ T iSiM'UJ SSSÉfMiiS^ I I M S Si~.i»i» —& 0X§| v'âa-æ 3-]!Í|BEt 4J -MWn WB


    OCR Scan     		PDF -J-12 NJU3501 peo 111 PHY10

    cfy 14 siemens

    Abstract: CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23
    Text: SIEMENS AKTIENGESELLSCHAF QBE D • fl23SbDS QOlSb?*} T H S I E G 7~“3/-^5' GaAs FETs Gallium Arsenide Field-Effect Transistors Metal Ceram ic Packages Type Max. ratings V ds V 5 CFY 10 5 CFY 11 CFY 12 5 0 CFY 19-18 6 □ CFY 19-22 6 □ CFY 19-27 6 CFY 18-12 5


    OCR Scan     		PDF fl23SbDS cfy 14 siemens CFY 18 CFY 10 cfy siemens CFY12 CFY10 CFY 18-23

    micro-X Package MARKING CODE C

    Abstract: 137 marking Micro-X 78 D 56
    Text: S IE M E N S CFY25 HiReIX-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power


    OCR Scan     		PDF CFY25 CFY25-P CFY25-23 CFY25-23P CFY25-20 CFY25-20P CFY25-nnl: QS9000 micro-X Package MARKING CODE C 137 marking Micro-X 78 D 56

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S CFY25 HiRelX-Band GaAs Low Noise / General Purpose MESFET • HiRel Discrete and Microwave Semiconductor • For professional pre- and driver-amplifiers • For frequencies from 500 MHz to 20 GHz • Hermetically sealed microwave package • Low noise figure, high gain, moderate power


    OCR Scan     		PDF CFY25 CFY25-P CFY25-23 CFY25-23P CFY25-20 CFY25-20P QS9000

    Q62702-F1394

    Abstract: No abstract text available
    Text: Infineon faîhnoîogte» G aA s FET CFY 3 5 Data Sheet • • Low noise High gain • For low-noise front end amplifiers • For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel


    OCR Scan     		PDF Q62702-F1393 Q62702-F1394 Q62702-F1394

    Micro-X Marking 865

    Abstract: No abstract text available
    Text: S IE M E N S CFY67 HiRel K-Band GaAs Super Low Noise HEMT • HiRel Discrete and Microwave Semiconductor • Pseudo-morphic AIGaAs/lnGaAs/GaAs HEMT • For professional super low-noise amplifiers • For frequencies from 500 MHz to > 20 GHz • Hermetically sealed microwave package


    OCR Scan     		PDF CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-10P CFY67-nnl: QS9000 Micro-X Marking 865

    5N521

    Abstract: CFY30
    Text: SIEMENS CFY 30 GaAs FET F eatures • Low noise /-'mm = 1.4 d B at 4 G Hz • High gain (11.5 dB typ. a l 4 GHz) • For o scillators up to 12 G Hz • For am p lifiers up to 6 GHz • Io n -im planted p lanar structure • C hip all gold m etallization


    OCR Scan     		PDF