Untitled
Abstract: No abstract text available
Text: Final Electrical Specifications LTC3423/LTC3424 Low Output Voltage, 3MHz Micropower Synchronous Boost Converters U • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1.5V to 5.5V Adjustable Output Voltage Synchronous Rectification: Up to 95% Efficiency 1A Switch Current LTC3423 or
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LTC3423/LTC3424
LTC3423)
LTC3424)
10-Pin
LTC3424
200mA
5/30V
100kHz
34234i
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MBRM120T3
Abstract: PWM IC 8 PIN 3423 PWM IC 3423 cd43 sumida CDRH3D16-4R7M 3423 3423 pwm 8 pin CD43-2R2M JMK212BJ225MG JMK325BJ226MM
Text: LTC3423/LTC3424 Low Output Voltage, 3MHz Micropower Synchronous Boost Converters DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ 1.5V to 5.5V Adjustable Output Voltage Synchronous Rectification: Up to 95% Efficiency 1A Switch Current LTC3423 or
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LTC3423/LTC3424
LTC3423)
LTC3424)
10-Pin
Receiv600mA,
LTC3401
100kHz
LTC3402
34234f
MBRM120T3
PWM IC 8 PIN 3423
PWM IC 3423
cd43 sumida
CDRH3D16-4R7M
3423
3423 pwm 8 pin
CD43-2R2M
JMK212BJ225MG
JMK325BJ226MM
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PWM IC 8 PIN 3423
Abstract: PWM IC 3423
Text: LTC3423/LTC3424 Low Output Voltage, 3MHz Micropower Synchronous Boost Converters DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ 1.5V to 5.5V Adjustable Output Voltage Synchronous Rectification: Up to 95% Efficiency 1A Switch Current LTC3423 or
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LTC3423/LTC3424
LTC3423)
LTC3424)
10-Pin
LTC3401
100kHz
LTC3402
34234f
PWM IC 8 PIN 3423
PWM IC 3423
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CU20025ECPB-w1J
Abstract: cu20025 "NORITAKE Vacuum Fluorescent Display" cu20025ecpb w1j CU20025ECPB NOISE FILTERS USED IN VFD 2xh diode noritake vfd VFD MANUAL vfd 240
Text: Revised Date: Feb 03, 2009 APPLICATION NOTES Issued Date: Feb. 04, 2008 APN 1100-01 CU20025ECPB-W1J Application Note INDEX 1. BUS Setup 2. Initializing procedure 3. DDRAM address for CU20025ECPB-W1J 4. FAQ Frequently Asked Questions 5. Comparisons between U-version modules and LCDs
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CU20025ECPB-W1J
U20025ECPB-W1J
700ns
160ns
100ms
140ns
320ns
CU20025ECPB-w1J
cu20025
"NORITAKE Vacuum Fluorescent Display"
cu20025ecpb w1j
CU20025ECPB
NOISE FILTERS USED IN VFD
2xh diode
noritake vfd
VFD MANUAL
vfd 240
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CU20025ECPB-w1J
Abstract: "NORITAKE Vacuum Fluorescent Display" CU20025ECPB cu20025 cu20025ecpb w1j vfd advantage noritake vfd 2xh diode Noritake application note
Text: Revised Date: July 28, 2009 APPLICATION NOTES Issued Date: Feb. 04, 2008 APN 1100-02 CU20025ECPB-W1J Application Note INDEX 1. BUS Setup 2. Initializing procedure 3. DDRAM address for CU20025ECPB-W1J 4. FAQ Frequently Asked Questions 5. Comparisons between U-version modules and LCDs
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CU20025ECPB-W1J
700ns
160ns
100ms
140ns
320ns
CU20025ECPB-w1J
"NORITAKE Vacuum Fluorescent Display"
CU20025ECPB
cu20025
cu20025ecpb w1j
vfd advantage
noritake vfd
2xh diode
Noritake application note
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Untitled
Abstract: No abstract text available
Text: Green Power Solutions srl Via Venezia 34D - 10088 Volpiano TO , Italy Phone: +39-011-988 2251 Fax: +39-011-988 1358 Web: www.gpsemi.it e-mail: info@gpsemi.it GPDP4218 AVALANCHE RECTIFIER DIODE VOLTAGE UP TO AVERAGE CURRENT SURGE CURRENT BLOCKING CHARACTERISTICS
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GPDP4218
GPDP4218T002
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GPDP4218
Abstract: GPDP4218T002
Text: Green Power Solutions srl Via Greto di Cornigliano 6R - 16152 Genova , Italy Phone: +39-010-659 1869 Fax: +39-010-659 1870 Web: www.gpsemi.it E-mail: info@gpsemi.it GPDP4218 AVALANCHE RECTIFIER DIODE VOLTAGE UP TO AVERAGE CURRENT SURGE CURRENT BLOCKING CHARACTERISTICS
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GPDP4218
GPDP4218T002
GPDP4218
GPDP4218T002
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discharge tube protector mtbf
Abstract: gas discharge tube MTBF Tower Mounted Amplifier remec, amplifier S0300701 remec bias tee Remec mtbf antenna pdu Remec RF power amplifier MHz
Text: PCS/DCS Indoor and Outdoor Bias Tees Coverage Enhancement Accessory Family FEATURES • Bias Tee feed of DC supply and ALPTM signals - no additional tower cabling • Extremely low RF insertion loss • Excellent return loss • Exceptional passive intermodulation
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48v dc 40a power supply
Abstract: mfa350ps48 MFA350PS24 EMA212 ORing fet 48v 5a DCM60 MFA350 ECM40 DMA212 GFR1K5PS24
Text: 2007 Communications Power P R O D U C T S E L E C T I O N G U I D E Global Communications ••• ••• ••• ••• Worldwide sales of $150 million London Stock Exchange listed Design, engineering & sales operations in 14 countries Technology leading product development group
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IC 4027
Abstract: 35gp120b2d2 35GP120 APT35GP120B T0-247 70A 1200V IGBTS 35GP120B
Text: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B
O-247
IC 4027
35gp120b2d2
35GP120
APT35GP120B
T0-247
70A 1200V IGBTS
35GP120B
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7406 50 amp igbt
Abstract: datasheet IC 7406 7406 35GP120B
Text: APT35GP120B 1200V Mos 7 Ultra Fast IGBT The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B
O-247
7406 50 amp igbt
datasheet IC 7406
7406
35GP120B
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IC 7409
Abstract: 35gp120b2d2 7409 ic 7409 datasheet IGBT 600V 35A 35GP120B
Text: APT35GP120J 1200V Mos 7 Ultra Fast IGBT E E The Mos 7 Ultra Fast IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120J
IC 7409
35gp120b2d2
7409
ic 7409 datasheet
IGBT 600V 35A
35GP120B
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APT35GP120J
Abstract: 35GP120
Text: APT35GP120J 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120J
APT35GP120J
35GP120
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Untitled
Abstract: No abstract text available
Text: Zener Regulator Diodes Mlsrcse i l Division Package Outline Type Santa Ana Santa Ana Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Scottsdale Santa Ana Santa Ana Scottsdale Scottsdale
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DO-35
DO-213AA
DO-213AA
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2N1479
Abstract: 2N1480 2N1481 2N1482 2N1700 2N5781 2N5782 2N5784 2N5785 2N5786
Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863
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O-39/TO-5
D00D1SS
515TQft
2N1479
2N1480
2N1481
2N1482
2N1700
2N5784
2N5785
2N5781
2N5782
2N5786
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ALY TRANSISTOR
Abstract: 40349 40327 ka025 20100 2N4866 BFE 75A transistor 160v 1.5a pnp transistor ALY 2N1479
Text: "flM NPN TO-39/TO-5 2848352 DIODE TRANSISTOR DE J 2 B M Û 3 S E 0DÜG155 5 C O . I N C 84D 00125 D jr. 3 l-O fT D1QDE TMI\l.515T0ft Cü.if\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area ca ll TO LL FREE 800-526-4581 FA X No. 201-575-5863
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O-39/TO-5
D00D1SS
515TQft
2N1479
2N1480
2N1481
2N1482
2N1700
2N5784
2N5785
ALY TRANSISTOR
40349
40327
ka025
20100
2N4866
BFE 75A
transistor 160v 1.5a pnp
transistor ALY
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BUT35
Abstract: transistors but35 CM4050
Text: MOTO RO LA SC XSTRS/R F 12E D | b3L75S4 00840130 T | MOTOROLA SEMICONDUCTOR TECHNICAL DATA 40 AMPERES SWITCHMODE SERIES NPN SILICON POWER DARLINGTON TRANSISTORS WITH BASE-EMITTER SPEEDUP DIODE NPN SILICON POWER DARLINGTON TRANSISTORS 1000 VOLTS 2 5 0 WATTS
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b3L75S4
T-35-1?
BUT35
BUT35
transistors but35
CM4050
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BUT35
Abstract: THT bsc 25 transistors but35 ASX 12 D transistor CM4050
Text: MO T O R O L A SC XST RS /R 12E D I b3b75S4 DDaMflbfl T | F MOTOROLA SEM ICON DUCTOR TECHNICAL DATA 40 AMPERES NPN SILICON POW ER DARLINGTON TRAN SISTO RS SW ITCHM ODE SER IES NPN SILICON POW ER DARLINGTON TRAN SISTO RS WITH BASE-EM ITTER SPEEDU P DIODE 1000 VOLTS
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b3b75S4
BUT35
BUT35
THT bsc 25
transistors but35
ASX 12 D transistor
CM4050
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Untitled
Abstract: No abstract text available
Text: LVQ02 S3 National ÆM Semiconductor 54LVQ/74LVQ02 Low Voltage Quad 2-Input NOR Gate General Description Features The 'LV Q 02 co nta in s four, 2-input NOR gates. • Ideal fo r low p o w e r/lo w noise 3.3V a pplications ■ G uaranteed sim ultaneous sw itching noise level and
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LVQ02
54LVQ/74LVQ02
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GM 950 motorola
Abstract: 4n90 4N85 N95 DIODE 4n90 MOSFEt
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MTM3N95 MTM3N100 MTM4N85 MTM4N90 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement M ode Silico n Gate T M O S These TMOS Power FETs are designed for high voltage, high speed power switching applications such as switching
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MTM3N95
MTM3N100
MTM4N85
MTM4N90
TM3NS15-----
GM 950 motorola
4n90
4N85
N95 DIODE
4n90 MOSFEt
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Transistor 2SA 2SB 2SC 2SD
Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)
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O-126
O-126
T0-220AB,
O-220
2SC4544
2SC4448
2SC3612
2BC4201
Transistor 2SA 2SB 2SC 2SD
S-AU27M
S2000A inverter
P4005
S-AV21H
S-AU27
3182N
2sb 834 transistor
Transistor 2SC4288A
Drive IC 2SC3346
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OP25
Abstract: No abstract text available
Text: H A -5127 £ HARRIS U ltra -L o w Noise Presision O perational Am plifier May 1990 Features A pplications • H ig h s p e e d . 10V / ms • High Speed Signal Conditioners • Wide Unity Gain B an dw id th. 8.5MHz
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10tiV
126dB
00V/m
00V/V
2600pm
08jiV
OP25
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4511 7-segment display
Abstract: No abstract text available
Text: MM54HC4511/MM74HC4511 BCD-to-7 Segment Latch/Decoder/Driver General Description Features This high speed latch/decoder/driver utilizes advanced silicon-gate CMOS technology. It has the high noise immunity and low power consumption of standard CMOS integrated
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MM54HC4511/MM74HC4511
MM54HC4511/MM74HC4511
4511 7-segment display
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ST 7 flus 56
Abstract: 6P45S KD521D 3D24N RFT Service Mitteilung service-mitteilungen 7 flus 56 MP25B IC-98 VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
Text: SERVICE-MITTEILUNGEN 3SITE APR./IUI 41 r a d i o -television VEB IN D U S T R I E V E R T R I E 8 R U N D F U N K U N D F E R N S E H E N 1 - 8 198o Mitteilung aus dem Bereich Servicevorbereitung R A D U G 1 - 73o - Schaltungsänderungen Wir teilen Ihnen die Veränderungen in der elektrischen Schal
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MP-25B
I-T17;
BM-2-3ooB-22oopf
-C96j
125-I0k0nH-Inuten
V5/80
ST 7 flus 56
6P45S
KD521D
3D24N
RFT Service Mitteilung
service-mitteilungen
7 flus 56
MP25B
IC-98
VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN
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