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    340 HEAT SINK COMPOUND Search Results

    340 HEAT SINK COMPOUND Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UE36C2620005011 Amphenol Communications Solutions 1x2 QSFP-DD cage with open top and heat sink clip, no heat sink Visit Amphenol Communications Solutions
    SMOD707KITV1 Renesas Electronics Corporation Volatile Organic Compound (VOC) Sensor Evaluation Kit Visit Renesas Electronics Corporation
    U77E112J2001 Amphenol Communications Solutions SFP CAGE WITH HEAT SINK Visit Amphenol Communications Solutions
    U79A1113001 Amphenol Communications Solutions XFP CAGE WITHOUT HEAT SINK Visit Amphenol Communications Solutions
    U79A1212D01 Amphenol Communications Solutions XFP CAGE WITH HEAT SINK Visit Amphenol Communications Solutions

    340 HEAT SINK COMPOUND Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Dow Corning 340

    Abstract: Dow Corning Dow Corning d 340 DOW 340 heat sink compound 340 Heat Sink Compound Semco cartridge AGP5223 D 217 dow corning silicone compound
    Text: Product Information Silicon-Based Compounds Dow Corning 340 Heat Sink Compound FEATURES • High thermal conductivity • Low bleed • Stable at high temperatures COMPOSITION • Greaselike silicone fluid thickened with metal oxide filler Compound provides thermal coupling of electrical/electronic


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    Dow Corning DC 11 compound

    Abstract: DIN ISO 1302 berulub Dow Corning 340 bechem Dow Corning DC 11 smd 4n DOW 340 SMD-247
    Text: Mounting instructions Basic Instructions Semiconductors should be mounted so that they are not heated up by adjacent parts. In case of natural convection heatsink fins must be arranged so that the air can flow freely from the bottom to the top. In case of forced convection by air or liquid the power semiconductor can be mounted in any position as long as the cooling


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    DIN ISO 1302

    Abstract: Dow Corning 340 ejot torque TO247 CASE isoplus ixys mounting Dow Corning SMD-247 Dow Corning DC 11 plug M4 threaded stud SCREW EJOT
    Text: Mounting instructions Basic Instructions Semiconductors should be mounted so that they are not heated up by adjacent parts. In case of natural convection heatsink fins must be arranged so that the air can flow freely from the bottom to the top. In case of forced convection by air or liquid the power semiconductor can be mounted in any position as long as the cooling


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    DIN ISO 1302

    Abstract: SCREW EJOT Dow Corning 340 ejot torque ISOPLUS247 SMD-247
    Text: Mounting instructions Basic Instructions Semiconductors should be mounted so that they are not heated up by adjacent parts. In case of natural convection heatsink fins must be arranged so that the air can flow freely from the bottom to the top. In case of forced convection by air or liquid the power semiconductor can be mounted in any position as long as the cooling


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    R3003

    Abstract: thermal analysis on pcb double sided pcb, thermal via AN-0003 AWM6422 AWM6423
    Text: Application Note Thermal Design for AWM6423 Rev 0 Relevant products • • AWM6423 AWM6422 OVERVIEW ANADIGICS’ AWM6423 WiMAX Power Amplifier is a high performance device that delivers exceptional linearity and efficiency at high output power levels. The device operates over the voltage supply range


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    AWM6423 AWM6422 AWM6423 R3003 thermal analysis on pcb double sided pcb, thermal via AN-0003 AWM6422 PDF

    RA07H3340M-101

    Abstract: RA07H3340M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M RoHS Compliance ,330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz


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    RA07H3340M 330-400MHz RA07H3340M 400-MHz RA07H3340M-101 PDF

    RA07N3340M

    Abstract: RA07N3340M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to


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    RA07N3340M 330-400MHz RA07N3340M 400-MHz RA07N3340M-01 PDF

    RA07H3340

    Abstract: RA07H3340M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M 330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE/ MOBILE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 330- to


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    RA07H3340M 330-400MHz RA07H3340M 400-MHz nomina3-1-55685-739 I-20041 RA07H3340 RA07H3340M-01 PDF

    RA07M3340M

    Abstract: RA07M3340M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M RoHS Compliance , 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to


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    RA07M3340M 330-400MHz RA07M3340M 400-MHz RA07M3340M-101 PDF

    RA07H3340M

    Abstract: RA07H3340M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M 330-400MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 330- to 400-MHz


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    RA07H3340M 330-400MHz RA07H3340M 400-MHz RA07H3340M-01 PDF

    RA07N3340M

    Abstract: RA07N3340M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M RoHS Compliance , 330-400MHz 7.5W 9.6V 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to


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    RA07N3340M 330-400MHz RA07N3340M 400-MHz RA07N3340M-101 PDF

    ISO4762

    Abstract: DIN 931 din 7984 AN-2006-07 din 7985 primestack socket head cap screw din 6900 SOCKET HEAD CAP SCREWS DC340
    Text: Application Note, V1.0, Aug.2006 AN-No.: AN-2006-07 PrimeSTACK Mounting of PrimeSTACK IPM on a heat sink. IFAG AIM OPP BE HPS SO STA PPE Edition 2006-09-15 Published by Infineon Technologies AG 59568 Warstein, Germany Infineon Technologies AG 2006. All Rights Reserved.


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    AN-2006-07 ISO4762 DIN 931 din 7984 AN-2006-07 din 7985 primestack socket head cap screw din 6900 SOCKET HEAD CAP SCREWS DC340 PDF

    RA13H3340M

    Abstract: RA13H3340M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


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    RA13H3340M 330-400MHz RA13H3340M 13-watt 400-MHz RA13H3340M-01 PDF

    RA13H3340M

    Abstract: RA13H3340M-101
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


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    RA13H3340M 330-400MHz RA13H3340M 13-watt 400-MHz RA13H3340M-101 PDF

    RA30H3340M

    Abstract: RA30H3340M-01 RA30H3340M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA30H3340M 330-400MHz 30W 12.5V MOBILE RADIO DESCRIPTION The RA30H3340M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


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    RA30H3340M 330-400MHz RA30H3340M 30-watt 400-MHz RA30H3340M-01 RA30H3340M-E01 PDF

    hatfield attenuator

    Abstract: ra07m3340 RF MOSFET MODULE RA07M3340M RA07M3340M-01 RA07M3340M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz


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    RA07M3340M 330-400MHz RA07M3340M 400-MHz avai86-2-2833-9793 hatfield attenuator ra07m3340 RF MOSFET MODULE RA07M3340M-01 RA07M3340M-E01 PDF

    RA07N3340M

    Abstract: RA07N3340M-01 RA07N3340M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N3340M 330-400MHz 7.5W 9.6V PORTABLE RADIO DESCRIPTION The RA07N3340M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 330- to 400-MHz


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    RA07N3340M 330-400MHz RA07N3340M 400-MHz RA07N3340M-01 RA07N3340M-E01 PDF

    hatfield attenuator

    Abstract: RF MOSFET MODULE RA13H3340M RA13H3340M-01 RA13H3340M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H3340M 330-400MHz 13W 12.5V MOBILE RADIO DESCRIPTION The RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz


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    RA13H3340M 330-400MHz RA13H3340M 13-watt 400-MHz hatfield attenuator RF MOSFET MODULE RA13H3340M-01 RA13H3340M-E01 PDF

    RA07M3340M

    Abstract: RA07M3340M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M3340M 330-400MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M3340M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 330- to 400-MHz


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    RA07M3340M 330-400MHz RA07M3340M 400-MHz RA07M3340M-01 PDF

    hatfield attenuator

    Abstract: RF MOSFET MODULE RA07H3340M RA07H3340M-01 RA07H3340M-E01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H3340M 330-400MHz 7W 12.5V PORTABLE/ MOBILE RADIO DESCRIPTION The RA07H3340M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable/ mobile radios that operate in the 330- to


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    RA07H3340M 330-400MHz RA07H3340M 400-MHz hatfield attenuator RF MOSFET MODULE RA07H3340M-01 RA07H3340M-E01 PDF

    RA55H3340M-101

    Abstract: RA55H3340M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H3340M 330-400MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to


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    RA55H3340M 330-400MHz RA55H3340M 55-watt 400-MHz RA55H3340M-101 PDF

    5052-T32

    Abstract: 340 Heat Sink Compound Dow Corning
    Text: M IC R O G U JA L IT Y / Application Notes SEM IC O N D U C TO R , INC. IBR Installation Data Recommended Plate Thickness, “ T” = Vs to 3/i6 inches Hole Diameter, “ D” = 0.747 ± .001 iiiches. Material, Aluminum with hardness Brinnell 10/500 55 to 75 tensile strength


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    25-35KPSI 5052-T32 340 Heat Sink Compound Dow Corning PDF

    Omnephase

    Abstract: Omnephase 1004 omnephase 1004 a Omnephase 604 Omnephase 1004 b SERIES OMNEPHASE OMNEPHASE free fan dimmer circuit application induction potentiometer 120 volt dimmer circuit with triac ac motor speed control circuit with triac 120v
    Text: 33E HbTL^SD QD0G57L b • - T 'k S - O i «-¿v—rA-'v -¿-, SER/ES OMNEPHASE OMNEPHASE Controls provide full-wave AC phase control in a unique, high-density epoxy-encapsulated package. Capable of governing 6000 Watts @ 120V, Omnephase are rated at 6 ,10 or 15 amps and operate on 120


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    AI99S" ACR-100K ACR-200K Omnephase Omnephase 1004 omnephase 1004 a Omnephase 604 Omnephase 1004 b SERIES OMNEPHASE OMNEPHASE free fan dimmer circuit application induction potentiometer 120 volt dimmer circuit with triac ac motor speed control circuit with triac 120v PDF

    Untitled

    Abstract: No abstract text available
    Text: MOUNTING INSTRUCTIONS page TO126/SOT82 616 SOT186/A; T0220AB 620 SOT199/SOT429/TOP3D 624 Philips Semiconductors Mounting Instructions T0126/S0T82 GENERAL DATA AND INSTRUCTIONS General rules 1. Fasten the device to the heatsink before soldering the leads. 2. Avoid stress to the leads.


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    O126/SOT82 OT186/A; T0220AB OT199/SOT429/TOP3D T0126/S0T82 199/SOT429/TOP3D PDF