R5F2127
Abstract: R5F21276SNFP R5F21276SN-32P VT-200
Text: R8C/26-29 31-Aug-06 Evaluation of Subsystem Clock Oscillation Circuit [R5F21276SN-32P] QFP 7x7 0.80mm pitch Measurement conditions : 3.3V Model Vcc=2.2 to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance :CL=6.0pF
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R8C/26-29
31-Aug-06
R5F21276SN-32P]
VT-200
768kHz
/-20x10-6
50kohm
1x10-6W
VT-200)
R5F2127
R5F21276SNFP
R5F21276SN-32P
VT-200
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Untitled
Abstract: No abstract text available
Text: MC515ER Product Flyer MagnaChip Imaging Solutions Division 1.3 Megapixel 1/3” CMOS Bayer RGB Sensor Key Features Product Overview M-Pixel low light performance Sub 1 LUX performance 3.6um pixel Low noise 12-bit ADC with CDS Dark level offset compensation
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MC515ER
12-bit
MC515ER
960x720
1280x720
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Cutler-Hammer type m RELAY
Abstract: westinghouse to Cutler-Hammer cross reference 10000 watt stabilizer transformer winding formula EC-N051 Cutler-Hammer HMCP Cutler-Hammer 480 Volt coil 9.2876.3 magnetic Contactor wiring diagrams cat.201.01.t.e relay D40 cutler-hammer C341A
Text: Tab3301.fm Page 1 Monday, October 23, 2000 9:49 PM NEMA Contactors & Starters 33-1 January 2001 NEMA Contactors & Starters Vol. 2, Ref. No. [0017] CAT.201.01.T.E Contents Description Freedom Line Product Family Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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Tab3301
Cutler-Hammer type m RELAY
westinghouse to Cutler-Hammer cross reference
10000 watt stabilizer transformer winding formula
EC-N051
Cutler-Hammer HMCP
Cutler-Hammer 480 Volt coil 9.2876.3
magnetic Contactor wiring diagrams
cat.201.01.t.e
relay D40 cutler-hammer
C341A
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BGA2771
Abstract: philips 23 BGA2711 BGA2748 BGA2776 BP317
Text: Philips Semiconductors Philips Semiconductors’ new family of MMIC Gain Blocks is optimized to meet the requirements of a broad range of functions in mobile communications, cable systems, infrared interfacing and ISM-band applications. Offering simple selection for fast design turnaround and
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SCB71
BGA2771
philips 23
BGA2711
BGA2748
BGA2776
BP317
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emi rfi filter
Abstract: RFI filter cost RC Filter MSD001 in line t filter on board (DC) RFI suppression filters philips Film EMI filter foto transistor philips 035
Text: PHILIPS COMPONENTS Application Note Integrated RC filters for EMI/RFI suppression rden Foto’s wo eleverd nog aang rden Foto’s wo eleverd nog aang Integrated RC filters for EMI/RFI suppression SUMMARY Philips offers a variety of integrated passive RC filters in thin film-on-silicon technology in both TFilter and Half-T Filter configurations. T-type
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COB26
emi rfi filter
RFI filter cost
RC Filter
MSD001
in line t filter
on board (DC) RFI suppression filters
philips Film
EMI filter
foto transistor
philips 035
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BGY588N
Abstract: BP317 DIN45004B
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGY588N CATV amplifier module Product specification Supersedes data of 1999 Mar 29 2000 Feb 14 Philips Semiconductors Product specification CATV amplifier module BGY588N FEATURES PINNING - SOT115J • Excellent linearity
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M3D252
BGY588N
OT115J
603510/03/pp8
BGY588N
BP317
DIN45004B
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MSD350
Abstract: Philips X7R capacitors PHILIPS capacitors Philips 0805 capacitors Philips chip footprints philips 1206 capacitors Philips X7R capacitors 0805 MSD346 Philips PH capacitors philips capacitor 035
Text: PHILIPS COMPONENTS Application Note Low-inductance CMCs for high-speed digital systems Low-inductance CMCs for high-speed digital systems SUMMARY Philips Components’ new range of low-inductance CMCs are ideal for decoupling in highspeed digital systems. With terminations on the
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COB31
MSD350
Philips X7R capacitors
PHILIPS capacitors
Philips 0805 capacitors
Philips chip footprints
philips 1206 capacitors
Philips X7R capacitors 0805
MSD346
Philips PH capacitors
philips capacitor 035
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PDTA124EEF
Abstract: SC-89 BP317 PDTA124E
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA124EEF PNP resistor-equipped transistor Product specification 2001 Jun 11 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA124EEF FEATURES PINNING • Built-in bias resistors R1 and R2 typical 22 kΩ each
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M3D425
PDTA124EEF
613514/01/pp8
PDTA124EEF
SC-89
BP317
PDTA124E
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PBSS3540F 40 V low VCEsat PNP transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat PNP transistor PBSS3540F FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage
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M3D425
PBSS3540F
613514/01/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D428 BGE847BO/FC Optical receiver module Product specification Superseded by data of 1999 Mar 30 2000 Jan 04 Philips Semiconductors Product specification Optical receiver module BGE847BO/FC PINNING - SOT115W
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M3D428
BGE847BO/FC
BGE847BO/FC
OT115W
125008/03/pp8
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MARKING bt1 sot363
Abstract: MLD411 BT1 SOT363 PUMB11 bt1 marking MARKING 5F SOT363
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMB11 PNP resistor-equipped double transistor Product specification 2000 Aug 08 Philips Semiconductors Product specification PNP resistor-equipped double transistor PUMB11 FEATURES • Transistors with built-in bias resistors R1 and R2
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MBD128
PUMB11
MAM426
613514/01/pp8
MARKING bt1 sot363
MLD411
BT1 SOT363
PUMB11
bt1 marking
MARKING 5F SOT363
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transistor BUJ100
Abstract: cfl circuits cfl Self-Oscillating Philips cfl buj100 equivalent BALLAST low loss philips buj100 transistor BEP transistor BUJ100 cfl circuit
Text: PHILIPS SEMICONDUCTORS APPLICATION NOTE Philips' BUJ100 transistor in TO-92 suits all Compact Fluorescent Lamp powers Philips Semiconductors has developed a new generation of planar passivated, fast switching bipolar lighting transistor that breaks new ground in lighting-transistor technology. Rated at 700 V
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BUJ100
transistor BUJ100
cfl circuits
cfl Self-Oscillating
Philips cfl
buj100 equivalent
BALLAST low loss philips
buj100 transistor
BEP transistor
cfl circuit
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SC88 SOT363 plastic package Ht0 MARKING CODE
Abstract: marking Ht0 sot363 HT0 SOT363 MARKING 5F SOT363 PUMH10 marking 301
Text: DISCRETE SEMICONDUCTORS DATA SHEET ge MBD128 PUMH10 NPN resistor-equipped transistors Product specification 2000 Aug 01 Philips Semiconductors Product specification NPN resistor-equipped transistors PUMH10 FEATURES • Transistors with built-in bias resistors R1 and R2
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MBD128
PUMH10
MAM438
613514/01/pp8
SC88 SOT363 plastic package Ht0 MARKING CODE
marking Ht0 sot363
HT0 SOT363
MARKING 5F SOT363
PUMH10
marking 301
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ENA1550
Abstract: LV8081GQ C0116 LV808 stm stepper motor ic
Text: Ordering number : ENA1550 Bi-CMOS LSI Two channels Constant-current H-bridge Driver LV8081GQ Overview The LV8081GQ is a two-channel constant-current driver that supports low-voltage operation. It is optimal for constant-current drive of stepping motors AF and zoom in portable equipment such as camera cell phones.
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ENA1550
LV8081GQ
LV8081GQ
UCT16
A1550-9/9
ENA1550
C0116
LV808
stm stepper motor ic
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MGW106
Abstract: SC88 SOT363 plastic package Ht9 MARKING CODE MARKING 5F SOT363 MARKING ht9 sot363 MARKING CODE ht9
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 PUMH9 NPN resistor-equipped double transistor Product specification Supersedes data of 1999 May 06 2001 Jun 05 Philips Semiconductors Product specification NPN resistor-equipped double transistor PUMH9
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MBD128
MAM342
613514/02/pp8
MGW106
SC88 SOT363 plastic package Ht9 MARKING CODE
MARKING 5F SOT363
MARKING ht9 sot363
MARKING CODE ht9
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D252 BGE787B CATV amplifier module Preliminary specification 2000 Oct 03 Philips Semiconductors Preliminary specification CATV amplifier module BGE787B PINNING - SOT115J FEATURES • Excellent linearity PIN
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M3D252
BGE787B
OT115J
OT115J
603518/01/pp6
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET age M3D088 PBSS4240T 40 V low VCEsat NPN transistor Product specification 2001 Jul 13 Philips Semiconductors Product specification 40 V low VCEsat NPN transistor PBSS4240T FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage
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M3D088
PBSS4240T
OT89/SOT223
613514/01/pp8
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CY3341
Abstract: CY3341DMB CY3341PC CY3341DC
Text: CY3341 CYPRESS . . SEMICONDUCTOR Features Data Input Data Output • 1.2-/2-MHz data rate • Fully TTL compatible • Independent asynchronous inputs and outputs • Direct replacement for PMOS 3341 • Expandable in word length and width • CMOS for optimum speed/power
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CY3341
CY3341
CY3341DMB
CY3341PC
CY3341DC
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CY3341DC
Abstract: km350 CY3341PC CY3341
Text: CY3341 64 x 4 FIFO Serial Memory Features D ata In p u t D ata O utp u t • T he fo u r b its o f d a ta on the Dq through D 3 inputs a re e n te re d into th e first loca tion w hen b o th in p ut ready IR and shift in (SI) are H IG H . This causes IR to go
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CY3341
11ISI
CY3341DC
km350
CY3341PC
CY3341
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3341PC
Abstract: CY3341PC CY3341
Text: CY3341 CYPRESS SEMICONDUCTOR 64 x 4 FIFO Serial Memory Features D a ta Inp u t • 1 .2 /2 M H z d a ta rate • F u lly T T L co m p a tib le • In d ep en d en t a sy n c h r o n o u s in p u ts an d ou tp u ts • D ir e c t r e p la cem en t for P M O S
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CY3341
3341PC
CY3341PC
CY3341
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Untitled
Abstract: No abstract text available
Text: Specifications subject to change. AMP PACE Connectors Important: Application tooling is abso lutely necessary to insert connectors into pc boards. See pages 3349 and 3350 for application tooling. Dimensioning: Dimensions are in inches and millimetres. Values in brackets are metric equivalents.
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silicon npn planar rf transistor sot 143
Abstract: marking c8 transistor transistor K 2937 BFG10 small RF NPN POWER TRANSISTOR 2.5 GHZ C5 MARKING TRANSISTOR NPN planar RF transistor RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN N70 transistor
Text: Philips Semiconductors Product specification NPN 2 GHz RF power transistor FEATURES BFG10; BFG10/X PINNING • High power gain PIN • High efficiency DESCRIPTION BFG10 see Fig.1 • Small size discrete power amplifier 1 • 1.9 GHz operating area 2 base
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BFG10;
BFG10/X
OT143
7110B2b
OT143.
711Dfl2L
silicon npn planar rf transistor sot 143
marking c8 transistor
transistor K 2937
BFG10
small RF NPN POWER TRANSISTOR 2.5 GHZ
C5 MARKING TRANSISTOR
NPN planar RF transistor
RF NPN POWER TRANSISTOR 2.5 GHZ
RF POWER TRANSISTOR NPN
N70 transistor
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HC259
Abstract: LS259 DL129 MC74HCXXXD MC74HCXXXN 3341 equivalent 74hc259
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 8 -B it Addressable Latch 1 -o f-8 Decoder M C54/74HC259 High-Performance Silicon-Gate CMOS J SUFFIX CERAMIC PACKAGE CASE 620-10 The MC54/74HC259 is identical in pinout to the LS259. The dévice inputs are compatible with standard CMOS outputs; with pullup resistors, they are
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MC54/74HC259
LS259.
HC259
DL129
MC54/74HC259
LS259
DL129
MC74HCXXXD
MC74HCXXXN
3341 equivalent
74hc259
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74HC259
Abstract: hc259
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M C54/74HC259 8 - Bit Addressable Latch 1 -o f-8 Decoder High-Performance Silicon-Gate CMOS J SUFFIX CERAMIC PACKAGE CASE 620-10 The MC54/74HC259 is identical in pinout to the LS259. The device inputs are compatible with standard CMOS outputs; with pullup resistors, they are
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MC54/74HC259
LS259.
HC259
addreHC259
DL129
MC54/74HC259
74HC259
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