3V30V
Abstract: 51K3 e515
Text: B C E7 R6 R5 Opt. R7 TGEN 10 CTRL 5 VREF C3 0.01uF 2 GND E10 C4 0.01uF 14 15 Q1 Si2319DS 2 3 LED+ R8 392k OUT PVIN R13 5.1k R9 Opt. R3 Opt. LED+ R15 Opt. 12 LED+ 330mA E2 ISN ISP 2 SW 1 SW PVIN OUT FB 4 Opt. 3 2 13 8 R10 Opt. PWM SYNC CTRL R11 Opt. 16 OUT
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V-40V
10MQ060N
V-30V
Si2319DS
LT3518EUF
330mA
3V30V
51K3
e515
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S1N3C-T Features Item Summary 1.3nH(-0.2nH to +0.2nH), 330mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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HKQ0603S1N3C-T
330mA,
15000pcs
500MHz
330mA
10000MHz
13min
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Untitled
Abstract: No abstract text available
Text: DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 0.99Ω @ VGS = 4.5V 450mA 1.2Ω @ VGS = 2.5V 400mA 1.8Ω @ VGS = 1.8V 330mA 2.4Ω @ VGS = 1.5V 300mA • • •
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DMN2990UDJ
450mA
400mA
330mA
300mA
AEC-Q101
DS35401
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Untitled
Abstract: No abstract text available
Text: DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary N EW PRODU CT V BR DSS RDS(ON) max ID max TA = 25°C 0.99Ω @ VGS = 4.5V 450mA 1.2Ω @ VGS = 2.5V 400mA 1.8Ω @ VGS = 1.8V 330mA 2.4Ω @ VGS = 1.5V 300mA • • •
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DMN2990UDJ
450mA
400mA
330mA
300mA
DS35401
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T3R3M Features Item Summary 3.3 H(±20%), 330mA, 650mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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CB2012T3R3M
330mA,
650mA,
3000pcs
96MHz
330mA
650mA
55MHz
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BP5842A
Abstract: BP5843 BP5843A BP5845W c2009 PIN OUTPUT
Text: -BP5842ABP5843A Demo BoardFront Side Output -pin 1 Reverse Side Output +pin Output + pin Input pin BP5842A:Vo=2.5~4V Io=960mA BP5843A:Vo=2.5∼12V Io=330mA Confidential c 2009 ROHM Co.,Ltd. All Rights Reserved -BP5845W Demo Board Front Side 2 Reverse Side
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-BP5842ABP5843A
BP5842A
960mA
BP5843A
330mA
-BP5845W
BP5843
BP5845W
c2009
PIN OUTPUT
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Untitled
Abstract: No abstract text available
Text: DMP22D4UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS -20V Features and Benefits RDS(ON) max ID max TA = 25°C 1.9Ω @ VGS = -4.5V -330mA 2.4Ω @ VGS = -2.5V -300mA 3.4Ω @ VGS = -1.8V -250mA 5Ω @ VGS = -1.5V -200mA •
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DMP22D4UFA
-330mA
-300mA
-250mA
-200mA
AEC-Q101
DS35766
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Untitled
Abstract: No abstract text available
Text: DMN2990UFA 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS 20V Features and Benefits RDS(ON) max ID max TA = 25°C 0.99Ω @ VGS = 4.5V 510mA 1.2Ω @ VGS = 2.5V 470mA 1.8Ω @ VGS = 1.8V 380mA 2.4Ω @ VGS = 1.5V 330mA • • •
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DMN2990UFA
510mA
470mA
380mA
330mA
AEC-Q101
DS35765
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Untitled
Abstract: No abstract text available
Text: DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 0.99Ω @ VGS = 4.5V 450mA 1.2Ω @ VGS = 2.5V 400mA 1.8Ω @ VGS = 1.8V 330mA 2.4Ω @ VGS = 1.5V 300mA • • •
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DMN2990UDJ
450mA
400mA
330mA
300mA
AEC-Q101
DS35401
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diode m30
Abstract: No abstract text available
Text: RECTIFIER, up to 3kV, 330mA, 2µs January 7, 1998 1997 SEMTECH CORP. M20 M30 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, up to 3kV, 330mA, 2µs M20 M30 January 7, 1998 © 1997 SEMTECH CORP.
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330mA,
diode m30
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S2N5C-T Features Item Summary 2.5nH(-0.2nH to +0.2nH), 330mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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HKQ0603S2N5C-T
330mA,
15000pcs
500MHz
330mA
9500MHz
13min
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Axial Leaded Inductors LAP02TAR47K Features Item Summary 0.47 H ±10% , 330mA, 35, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm
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LAP02TAR47K
330mA,
2000pcs
35min
230MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T3R3M Features Item Summary 3.3 H(±20%), 330mA, 650mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions
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Original
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PDF
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CB2012T3R3M
330mA,
650mA,
3000pcs
96MHz
330mA
650mA
55MHz
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Untitled
Abstract: No abstract text available
Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA V(BR)DSS • • • • • • • • • • N EW PRODU CT 60V Description and Applications
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DMN65D8LFB
400mA
330mA
DS35449
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IEC61951-2
Abstract: V39372
Text: DATA SHEET 1.SYSTEM RS STOCK NO. 525-815 Rechargeable Ni-MH Button Cells 2.DATA SHEEL Nominal Capacity 330mAh Nominal Voltage 6.0V Normal Charging 33mA Trickle Charging 9.9-16.5mA Normal Discharging 66mA Discharge cut-off Voltage Operating Temperature for 16h
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330mAh
Humidity65
V39372
JN802
IEC61951-2
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rapid charger
Abstract: No abstract text available
Text: NICKEL METAL HYDRIDE BATTERIES: INDIVIDUAL DATA SHEET HHR330APH Cylindrical L-Fat A size HR 18/67 (mm) 2.0 1.9 Voltage (V) Dimensions (with Tube) Typical Charge Characteristics 18.2 +- 00.7 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 (+) Charge: 330mA(0.1 It)✕16hrs.
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HHR330APH
330mA
16hrs.
1000Hz
rapid charger
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Untitled
Abstract: No abstract text available
Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V BR DSS Features and Benefits ID TA = 25°C RDS(ON) 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA NEW PRODUCT 60V • N-Channel MOSFET • Low On-Resistance • Low Gate-Threshold Voltage
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DMN65D8LFB
330mA
400mA
AEC-Q101
DS35545
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LT3518
Abstract: Led driver schematic led driver board schematic 12V LED driver SCHEMATIC
Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1160 FULL-FEATURED LED DRIVER WITH 2.3A SWITCH CURRENT LT3518 DESCRIPTION Demonstration circuit 1160 is a full-featured LED driver with 2.3A switch current featuring the LT 3518. The board is optimized to drive a 330mA
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LT3518
330mA
LT3518
100Hz,
DC1160A
DC1160
Led driver schematic
led driver board schematic
12V LED driver SCHEMATIC
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DMN65D
Abstract: No abstract text available
Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA V(BR)DSS • • • • • • • • • • NEW PRODUCT 60V Description and Applications These N-Channel enhancement mode field effect transistors are
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DMN65D8LFB
330mA
400mA
AEC-Q101
DS35449
DMN65D
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S1N9C-T Features Item Summary 1.9nH(-0.2nH to +0.2nH), 330mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)
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PDF
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HKQ0603S1N9C-T
330mA,
15000pcs
500MHz
330mA
10000MHz
13min
|
Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Axial Leaded Inductors LAL02VDR47K Features Item Summary 0.47 H ±10% , 330mA, 35, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm
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LAL02VDR47K
330mA,
2000pcs
35min
230MHz
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Untitled
Abstract: No abstract text available
Text: Spec Sheet INDUCTORS Multilayer Chip Inductors for High Frequency Applications HK series HK06033N0S-T Features Item Summary 3.0nH(-0.3nH to +0.3nH), 330mA, 5, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 15000pcs Products characteristics table
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HK06033N0S-T
330mA,
15000pcs
100MHz
330mA
7200MHz
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Untitled
Abstract: No abstract text available
Text: .310 MAX. . 330MAX. 1. MARKING: NOTES: UMI , DATE CODE, UMI P/N. UNLESS OTHERWISE SPECIFIED. 4 5 1 09 ± . 015 TYP. 3 SD-83616-1610 2 REV DATE A 26JAN00 UM2000-0416 B 2 1 JUNE00 UM2000-0597 APPVD BY ECN NO. REL BY CH FVW 075 TYP, 038 . 1 83 + 1 36 17 • “3 5 “ • 34 •
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330MAX.
SD-83616-1610
26JAN00
UM2000-0416
JUNE00
UM2000-0597
CM6R37P0-S01
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diode m30
Abstract: No abstract text available
Text: RECTIFIER, up to 3kV, 330mA, 2\is January 7, 1998 QUICK REFERENCE DATA M20 M30 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE V r = 2kV - 3kV If = 330mA = 2.0|xS trr
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OCR Scan
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PDF
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330mA,
TEL805-498-2111
330mA
diode m30
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