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    KEMET Corporation PHE850EA4330MA02R17

    CAP FILM 3300PF 20% 1.25KVDC RAD
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    Panasonic Electronic Components ETPE330MA9GB

    CAP TANT POLY 330UF 2.5V 1411
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    DigiKey ETPE330MA9GB Cut Tape 20,824 1
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    ETPE330MA9GB Digi-Reel 20,824 1
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    Pulse Electronics Corporation BMRA00060630330MA1

    INDUCTOR POWER
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    DigiKey BMRA00060630330MA1 Cut Tape 2,160 1
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    Panasonic Electronic Components 2TPE330MADGB

    CAP TANT POLY 330UF 2V 1411
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    Panasonic Electronic Components 2R5TPE330MAZB

    CAP TANT POLY 330UF 2.5V 1411
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    330MA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    3V30V

    Abstract: 51K3 e515
    Text: B C E7 R6 R5 Opt. R7 TGEN 10 CTRL 5 VREF C3 0.01uF 2 GND E10 C4 0.01uF 14 15 Q1 Si2319DS 2 3 LED+ R8 392k OUT PVIN R13 5.1k R9 Opt. R3 Opt. LED+ R15 Opt. 12 LED+ 330mA E2 ISN ISP 2 SW 1 SW PVIN OUT FB 4 Opt. 3 2 13 8 R10 Opt. PWM SYNC CTRL R11 Opt. 16 OUT


    Original
    V-40V 10MQ060N V-30V Si2319DS LT3518EUF 330mA 3V30V 51K3 e515 PDF

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S1N3C-T Features Item Summary 1.3nH(-0.2nH to +0.2nH), 330mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)


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    HKQ0603S1N3C-T 330mA, 15000pcs 500MHz 330mA 10000MHz 13min PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 0.99Ω @ VGS = 4.5V 450mA 1.2Ω @ VGS = 2.5V 400mA 1.8Ω @ VGS = 1.8V 330mA 2.4Ω @ VGS = 1.5V 300mA • • •


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    DMN2990UDJ 450mA 400mA 330mA 300mA AEC-Q101 DS35401 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary N EW PRODU CT V BR DSS RDS(ON) max ID max TA = 25°C 0.99Ω @ VGS = 4.5V 450mA 1.2Ω @ VGS = 2.5V 400mA 1.8Ω @ VGS = 1.8V 330mA 2.4Ω @ VGS = 1.5V 300mA • • •


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    DMN2990UDJ 450mA 400mA 330mA 300mA DS35401 PDF

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T3R3M Features Item Summary 3.3 H(±20%), 330mA, 650mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions


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    CB2012T3R3M 330mA, 650mA, 3000pcs 96MHz 330mA 650mA 55MHz PDF

    BP5842A

    Abstract: BP5843 BP5843A BP5845W c2009 PIN OUTPUT
    Text: -BP5842ABP5843A Demo BoardFront Side Output -pin 1 Reverse Side Output +pin Output + pin Input pin BP5842A:Vo=2.5~4V Io=960mA BP5843A:Vo=2.5∼12V Io=330mA Confidential c 2009 ROHM Co.,Ltd. All Rights Reserved -BP5845W Demo Board Front Side 2 Reverse Side


    Original
    -BP5842ABP5843A BP5842A 960mA BP5843A 330mA -BP5845W BP5843 BP5845W c2009 PIN OUTPUT PDF

    Untitled

    Abstract: No abstract text available
    Text: DMP22D4UFA 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS -20V Features and Benefits RDS(ON) max ID max TA = 25°C 1.9Ω @ VGS = -4.5V -330mA 2.4Ω @ VGS = -2.5V -300mA 3.4Ω @ VGS = -1.8V -250mA 5Ω @ VGS = -1.5V -200mA


    Original
    DMP22D4UFA -330mA -300mA -250mA -200mA AEC-Q101 DS35766 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN2990UFA 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS 20V Features and Benefits RDS(ON) max ID max TA = 25°C 0.99Ω @ VGS = 4.5V 510mA 1.2Ω @ VGS = 2.5V 470mA 1.8Ω @ VGS = 1.8V 380mA 2.4Ω @ VGS = 1.5V 330mA • • •


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    DMN2990UFA 510mA 470mA 380mA 330mA AEC-Q101 DS35765 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 0.99Ω @ VGS = 4.5V 450mA 1.2Ω @ VGS = 2.5V 400mA 1.8Ω @ VGS = 1.8V 330mA 2.4Ω @ VGS = 1.5V 300mA • • •


    Original
    DMN2990UDJ 450mA 400mA 330mA 300mA AEC-Q101 DS35401 PDF

    diode m30

    Abstract: No abstract text available
    Text: RECTIFIER, up to 3kV, 330mA, 2µs January 7, 1998 1997 SEMTECH CORP. M20 M30 TEL:805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com 652 MITCHELL ROAD NEWBURY PARK CA 91320 RECTIFIER, up to 3kV, 330mA, 2µs M20 M30 January 7, 1998 © 1997 SEMTECH CORP.


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    330mA, diode m30 PDF

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S2N5C-T Features Item Summary 2.5nH(-0.2nH to +0.2nH), 330mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)


    Original
    HKQ0603S2N5C-T 330mA, 15000pcs 500MHz 330mA 9500MHz 13min PDF

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Axial Leaded Inductors LAP02TAR47K Features Item Summary 0.47 H ±10% , 330mA, 35, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm


    Original
    LAP02TAR47K 330mA, 2000pcs 35min 230MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Wire-wound Chip Power Inductors CB series CB2012T3R3M Features Item Summary 3.3 H(±20%), 330mA, 650mA, 0805 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 3000pcs Products characteristics table External Dimensions


    Original
    CB2012T3R3M 330mA, 650mA, 3000pcs 96MHz 330mA 650mA 55MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA V(BR)DSS • • • • • • • • • • N EW PRODU CT 60V Description and Applications


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    DMN65D8LFB 400mA 330mA DS35449 PDF

    IEC61951-2

    Abstract: V39372
    Text: DATA SHEET 1.SYSTEM RS STOCK NO. 525-815 Rechargeable Ni-MH Button Cells 2.DATA SHEEL Nominal Capacity 330mAh Nominal Voltage 6.0V Normal Charging 33mA Trickle Charging 9.9-16.5mA Normal Discharging 66mA Discharge cut-off Voltage Operating Temperature for 16h


    Original
    330mAh Humidity65 V39372 JN802 IEC61951-2 PDF

    rapid charger

    Abstract: No abstract text available
    Text: NICKEL METAL HYDRIDE BATTERIES: INDIVIDUAL DATA SHEET HHR330APH Cylindrical L-Fat A size HR 18/67 (mm) 2.0 1.9 Voltage (V) Dimensions (with Tube) Typical Charge Characteristics 18.2 +- 00.7 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 (+) Charge: 330mA(0.1 It)✕16hrs.


    Original
    HHR330APH 330mA 16hrs. 1000Hz rapid charger PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary V BR DSS Features and Benefits ID TA = 25°C RDS(ON) 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA NEW PRODUCT 60V • N-Channel MOSFET • Low On-Resistance • Low Gate-Threshold Voltage


    Original
    DMN65D8LFB 330mA 400mA AEC-Q101 DS35545 PDF

    LT3518

    Abstract: Led driver schematic led driver board schematic 12V LED driver SCHEMATIC
    Text: QUICK START GUIDE FOR DEMONSTRATION CIRCUIT 1160 FULL-FEATURED LED DRIVER WITH 2.3A SWITCH CURRENT LT3518 DESCRIPTION Demonstration circuit 1160 is a full-featured LED driver with 2.3A switch current featuring the LT 3518. The board is optimized to drive a 330mA


    Original
    LT3518 330mA LT3518 100Hz, DC1160A DC1160 Led driver schematic led driver board schematic 12V LED driver SCHEMATIC PDF

    DMN65D

    Abstract: No abstract text available
    Text: DMN65D8LFB N-CHANNEL ENHANCEMENT MODE FIELD MOSFET Product Summary Features and Benefits RDS ON ID TA = 25°C 3.0Ω @ VGS = 10V 400mA 4.0Ω @ VGS = 5V 330mA V(BR)DSS • • • • • • • • • • NEW PRODUCT 60V Description and Applications These N-Channel enhancement mode field effect transistors are


    Original
    DMN65D8LFB 330mA 400mA AEC-Q101 DS35449 DMN65D PDF

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS High-Q Multilayer Chip Inductors for High Frequency Applications HK series Q type / AQ series HKQ0603S1N9C-T Features Item Summary 1.9nH(-0.2nH to +0.2nH), 330mA, 13, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum)


    Original
    HKQ0603S1N9C-T 330mA, 15000pcs 500MHz 330mA 10000MHz 13min PDF

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Axial Leaded Inductors LAL02VDR47K Features Item Summary 0.47 H ±10% , 330mA, 35, Leaded Lifecycle Stage Phaseout Standard packaging quantity (minimum) Taping 2000pcs Products characteristics table External Dimensions 3.4(max)x2.3(max)mm


    Original
    LAL02VDR47K 330mA, 2000pcs 35min 230MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: Spec Sheet INDUCTORS Multilayer Chip Inductors for High Frequency Applications HK series HK06033N0S-T Features Item Summary 3.0nH(-0.3nH to +0.3nH), 330mA, 5, 0201 Lifecycle Stage Mass Production Standard packaging quantity (minimum) Taping 15000pcs Products characteristics table


    Original
    HK06033N0S-T 330mA, 15000pcs 100MHz 330mA 7200MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: .310 MAX. . 330MAX. 1. MARKING: NOTES: UMI , DATE CODE, UMI P/N. UNLESS OTHERWISE SPECIFIED. 4 5 1 09 ± . 015 TYP. 3 SD-83616-1610 2 REV DATE A 26JAN00 UM2000-0416 B 2 1 JUNE00 UM2000-0597 APPVD BY ECN NO. REL BY CH FVW 075 TYP, 038 . 1 83 + 1 36 17 • “3 5 “ • 34 •


    OCR Scan
    330MAX. SD-83616-1610 26JAN00 UM2000-0416 JUNE00 UM2000-0597 CM6R37P0-S01 PDF

    diode m30

    Abstract: No abstract text available
    Text: RECTIFIER, up to 3kV, 330mA, 2\is January 7, 1998 QUICK REFERENCE DATA M20 M30 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com AXIAL LEADED HERMETICALLY SEALED HIGH VOLTAGE STANDARD RECOVERY RECTIFIER DIODE V r = 2kV - 3kV If = 330mA = 2.0|xS trr


    OCR Scan
    330mA, TEL805-498-2111 330mA diode m30 PDF