T2D21
Abstract: ic equivalent MID 400 300-12A4 E72873 MJ-132 ON400 300AVge
Text: MII 300-12A4 IGBT Modules IC25 = 330 A VCES = 1200 V VCE sat typ. = 2.2 V Short Circuit SOA Capability Square RBSOA MII 300-12A4 T1 MID 300-12A4 MDI 300-12A4 3 3 D1 11 10 9 3 T1 D1 8 8 D11 3 2 8 1 9 T2 1 T2 D2 1 1 9 D2 D12 11 11 10 2 E72873 10 2 2 Features
|
Original
|
PDF
|
300-12A4
E72873
20090812a
T2D21
ic equivalent MID 400
300-12A4
E72873
MJ-132
ON400
300AVge
|
ic equivalent MID 400
Abstract: E72873
Text: MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IC25 = 330 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 8 1 2 2 E 72873 Symbol Conditions Maximum Ratings VCES
|
Original
|
PDF
|
load20
ic equivalent MID 400
E72873
|
Untitled
Abstract: No abstract text available
Text: MII 300-12A4 MID 300-12A4 MDI 300-12A4 IC25 = 330 A VCES = 1200 V VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII 300-12A4 MID 300-12A4 MDI 300-12A4 3 3 11 10 9 3 T1 T1 D1 8 D11 D1 8 3 2 8 1 1 9 1 1 9 T2 T2 D2 10 D2 D12 11
|
Original
|
PDF
|
300-12A4
E72873
20090812a
|
Untitled
Abstract: No abstract text available
Text: MII 300-12 A4 MID 300-12 A4 MDI 300-12 A4 IC25 = 330 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Modules Short Circuit SOA Capability Square RBSOA MII MID 3 MDI 3 3 1 2 3 11 10 9 8 9 1 11 10 2 1 11 10 8 9 1 2 2 Preliminary data Symbol Conditions VCES VCGR TJ = 25°C to 150°C
|
Original
|
PDF
|
D-68623
|
Untitled
Abstract: No abstract text available
Text: VUO 30 IdAV = 37 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 + Type + + ~~ ~ ~ ~ VUO 30-08NO3 VUO 30-12NO3 VUO 30-14NO3 VUO 30-16NO3 VUO 30-18NO3* ~ – - E72873 * delivery time on request
|
Original
|
PDF
|
30-08NO3
30-12NO3
30-14NO3
30-16NO3
30-18NO3*
E72873
20080527a
|
IXYS VUO 30
Abstract: 30-16NO3 30-12NO3 E72873 30-14NO3 vuo 30 30-12No.3 IXYS VUO 30-14NO3 30-08NO3 800-1800V
Text: VUO 30 IdAV = 37 A VRRM = 800-1800 V Three Phase Rectifier Bridge VRSM VRRM V V 900 1300 1500 1700 1900 800 1200 1400 1600 1800 + Type + + ~~ ~ ~ ~ VUO 30-08NO3 VUO 30-12NO3 VUO 30-14NO3 VUO 30-16NO3 VUO 30-18NO3* ~ – - E72873 * delivery time on request
|
Original
|
PDF
|
30-08NO3
30-12NO3
30-14NO3
30-16NO3
30-18NO3*
E72873
20080527a
IXYS VUO 30
30-16NO3
30-12NO3
E72873
30-14NO3
vuo 30
30-12No.3
IXYS VUO 30-14NO3
30-08NO3
800-1800V
|
E72873
Abstract: No abstract text available
Text: Advanced Technical Information IC80 = 250 A = 1200 V VCES VCE sat typ. = 2.1 V IGBT Modules Sixpack NPT3 IGBT 2 28 4 6 15 20 25 16 17 21 22 26 27 11/12 29 13 14 9/10 18 19 7/8 23 24 1 E72873 See outline drawing for pin arrangement 3 5 Features IGBTs Symbol
|
Original
|
PDF
|
E72873
Advantage50
20070912a
E72873
|
4012-N
Abstract: No abstract text available
Text: VBO 40 IdAV = 40 A VRRM = 800-1600 V Single Phase Rectifier Bridge VRSM V 900 1300 1700 VRRM V 800 1200 1600 + Standard Types ~ ~ ~ VBO 40-08NO6 VBO 40-12NO6 VBO 40-16NO6 miniBLOC, SOT-227 B E72873 ~ – – Symbol Test Conditions Maximum Ratings IdAV IdAV ¬
|
Original
|
PDF
|
40-08NO6
40-12NO6
40-16NO6
OT-227
E72873
4012-N
|
40-08NO6
Abstract: 25080a 735 01 bridge rectifier B 1449 transistor E72873
Text: VBO 40 IdAV = 40 A VRRM = 800-1600 V Single Phase Rectifier Bridge VRSM V 900 1300 1700 VRRM V 800 1200 1600 + Standard Types ~ ~ ~ VBO 40-08NO6 VBO 40-12NO6 VBO 40-16NO6 miniBLOC, SOT-227 B E72873 ~ – – Symbol Test Conditions Maximum Ratings IdAV IdAV ①
|
Original
|
PDF
|
40-08NO6
40-12NO6
40-16NO6
OT-227
E72873
40-08NO6
25080a
735 01 bridge rectifier
B 1449 transistor
E72873
|
Untitled
Abstract: No abstract text available
Text: VBO 40 IdAV = 40 A VRRM = 800-1600 V Single Phase Rectifier Bridge VRSM V 900 1300 1700 VRRM V 800 1200 1600 + Standard Types ~ ~ VBO 40-08NO6 VBO 40-12NO6 VBO 40-16NO6 miniBLOC, SOT-227 B E72873 ~ ~ – – Symbol Test Conditions Maximum Ratings IdAV IdAV ①
|
Original
|
PDF
|
40-08NO6
40-12NO6
40-16NO6
OT-227
E72873
|
Untitled
Abstract: No abstract text available
Text: MWI 60-12T6K IC25 = 58 A VCES = 1200 V VCE sat typ. = 1.9 V IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 60-2T6K 0, 23 4 8 22 3 7 2 8 , 2 5, 6 9, 20 NTC E72873 Pin coniguration see outlines.
|
Original
|
PDF
|
60-12T6K
E72873
20071113a
MWI60-12T6K
|
5841a
Abstract: E72873 MWI60-12T6K
Text: MWI 60-12T6K IGBT Module Sixpack IC25 = 58 A VCES = 1200 V VCE sat typ. = 1.9 V Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 60-12T6K 10, 23 14 18 22 13 17 21 8 11, 12 15, 16 19, 20 NTC E72873 Pin configuration see outlines.
|
Original
|
PDF
|
60-12T6K
E72873
20071113a
MWI60-12T6K
5841a
E72873
MWI60-12T6K
|
Untitled
Abstract: No abstract text available
Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 m Low RDSon, high VDSS Superjunction MOSFET D TO-264 G G D E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C EAS
|
Original
|
PDF
|
85N60C
O-264
E72873
ID100
20100315c
|
85N60C
Abstract: UPS SIEMENS E72873 ID100
Text: IXKK 85N60C CoolMOS 1 Power MOSFET VDSS = 600 V ID25 = 85 A RDS on) max = 36 mΩ Low RDSon, high VDSS Superjunction MOSFET TO-264 D G G D S E72873 Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS ID25 ID100 TC = 25°C TC = 100°C
|
Original
|
PDF
|
85N60C
O-264
E72873
ID100
20100315c
85N60C
UPS SIEMENS
E72873
ID100
|
|
|
E72873
Abstract: MWI100-12E8
Text: MWI 100-12 E8 MKI 100-12 E8 IC25 = 165 A = 1200 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 3 7 11 4 14, 20 8 12 3 4 14, 20 12 19 17 15 MWI 19 15 11 E72873 See outline drawing for pin arrangement
|
Original
|
PDF
|
E72873
MWI100-12E8
20070912a
E72873
MWI100-12E8
|
Untitled
Abstract: No abstract text available
Text: MUBW 40-12 T7 Converter - Brake - Inverter Module CBI2 Trench-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 D12 2 D14 D16 14 T7 11 D3 T3 17 D2 T2 20 D5 T5 NTC 8 19 6 15 3 18 5 4 D4 D6 E72873 12 T4 13 See outline drawing for pin arrangement T6 9 10 23 24 Preliminary data
|
Original
|
PDF
|
E72873
IFAVM25
B25/50
20070912a
|
E72873
Abstract: MWI100-12E8 100-12E8
Text: MWI 100-12 E8 MKI 100-12 E8 IC25 = 165 A = 1200 V VCES VCE sat typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 13, 21 1 5 9 1 9 2 6 10 2 10 3 7 11 4 14, 20 8 12 3 4 14, 20 12 19 17 15 MWI 19 15 11 E72873 See outline drawing for pin arrangement
|
Original
|
PDF
|
E72873
MWI100-12E8
20070912a
E72873
MWI100-12E8
100-12E8
|
MUBW
Abstract: No abstract text available
Text: MUBW 40-12 T7 Converter - Brake - Inverter Module CBI2 Trench-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 2 3 18 D3 T3 17 15 20 D5 T5 NTC 8 19 6 5 4 D4 D6 E72873 D12 D14 D16 14 T7 11 D2 T2 12 T4 13 See outline drawing for pin arrangement T6 9 10 23 24 Preliminary data
|
Original
|
PDF
|
E72873
IFAVM25
20070912a
B25/50
MUBW
|
4012 IC
Abstract: free ic 4012 brake rectifier motor diode T7 E72873 IC 4012 T7 DIODE
Text: MUBW 40-12 T7 Converter - Brake - Inverter Module CBI2 Trench-IGBT 21 D11 D13 22 D15 D7 D1 T1 16 7 1 2 3 18 D3 T3 17 15 20 D5 T5 NTC 8 19 6 5 4 D4 D6 E72873 D12 D14 D16 14 T7 11 D2 T2 12 T4 13 See outline drawing for pin arrangement T6 9 10 23 Three Phase
|
Original
|
PDF
|
E72873
IFAVM25
B25/50
20070912a
4012 IC
free ic 4012
brake rectifier motor
diode T7
E72873
IC 4012
T7 DIODE
|
nec 2501 904
Abstract: AN 17821 audio nec 303 j fet nec 7912
Text: DATA SHEET GaAs MES FET NE721S01 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 7dBTYP. @ f = 1 2 G H z • Gate Length: Lg = 0.8 /xm recessed gate • Gate Width: Wg = 330 • fim Plastic package ORDERING INFORMATION
|
OCR Scan
|
PDF
|
NE721S01
NE721S01-T1
E721S01-T1B
nec 2501 904
AN 17821 audio
nec 303 j fet
nec 7912
|
sl2 357
Abstract: No abstract text available
Text: D A TA S H EE T GaAs MES FET NE72118 C to X BAND AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • High Power Gain: Gs = 5.5 dB TYP. @ f = 12 GHz • Gate Length: Lg = 0.8 /urn recessed gate • Gate W idth: Wg = 330 /urn • 4 pins super mini mold
|
OCR Scan
|
PDF
|
NE72118
NE72118-T1
NE72118-T2
WS60-00-1
IR30-00-2
sl2 357
|
Untitled
Abstract: No abstract text available
Text: Mil 300-12 A4 Li IXYS IGBT Modules ^C25 V CES V CE sat typ. Short Circuit SOA Capability MID 300-12 A4 MDI 300-12 A4 330 A 1200 V 2.2 V Square RBSOA Mil MID MDI ’ I I : : I' ' , 3 I 0 M l sc^J 9 0 -+ Preliminary data T O E 72873 Symbol Conditions Maximum Ratings
|
OCR Scan
|
PDF
|
D-68623
|
Untitled
Abstract: No abstract text available
Text: MII 300-12 A4 IGBT Modules ^C 25 Short Circuit SOA Capability VCES V C E sa t typ. MID 300-12 A4 330 A 1200 V 2.2 V Square RBSOA MID MDI P relim inary data E 72873 S ym bo l C o n d itio n s M axim um R atings V qeS T j = 25°C to 150°C 1200 V V CGR T j = 25°C to 150°C ; RGE = 20 k il
|
OCR Scan
|
PDF
|
E72873
D-68623
|
330 e74
Abstract: 95H28 330 e77 11C06 e79 330
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS DIGITAL-ECL E72 95003 E74 95101/10101/10501 E73 95004 E75 95102/10102/10502 8 4 2(6) (9)5 ( 10)6 (11)7 3(7) i > (14)10 (15)11 3 > - (16)12 9(13) (1)13 15(3) V c c i = Pin 1 V c c i = Pin 1 V c c i = Pin 1 (5 ) VCC 2 = Pin 16
|
OCR Scan
|
PDF
|
11C06
95H28
105XX
106XX
330 e74
330 e77
e79 330
|
